Patents by Inventor Ching Yao

Ching Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160276925
    Abstract: A united power module having an external input and a first input is provided. The united power module includes a load block, a protection circuitry and a detection block. The detection block includes an analog circuitry. The load block and an end of the protection circuitry are electrically coupled to the external input. The load block, the first input, and another end of the protection circuitry are electrically coupled to the detection block. The load block is supplied by an external power received from the external input. The protection circuitry receives the external power and outputs an auxiliary power. The analog circuitry receives a first power from the first input under a normal power supply state, or receives the auxiliary power under an auxiliary power supply state.
    Type: Application
    Filed: September 25, 2015
    Publication date: September 22, 2016
    Inventors: CHING-YAO SU, LIANG-WEI HUANG, HSUAN-TING HO, SHENG-FU CHUANG
  • Patent number: 9449029
    Abstract: A system and a method for diet management based on image analysis are provided. The system includes a database and a comparison device. The comparison device is coupled to the database. The comparison device performs similarity comparison in the database based on a supervector related to at least one diet image so as to find out at least one similar population and provides information related to the at least one similar population.
    Type: Grant
    Filed: April 2, 2013
    Date of Patent: September 20, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Chuan-Wei Ting, Ching-Yao Wang, Ju-Chin Chen
  • Patent number: 9449922
    Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: September 20, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tain-Shang Chang, Chia-Han Lai, Ren-Hau Yu, Ching-Yao Sun, Yu-Sheng Wang
  • Patent number: 9438453
    Abstract: The present invention discloses a network connection establishing method capable of preventing a link procedure from being strangled in a training state. An embodiment of the method comprises: a preceding step; a training step; and a following step. Said training step includes at least one of the following: counting a number, and returning to the preceding step if a local receiver is not yet ready after finishing counting the number; detecting a reception signal according to a signal detection level, and returning to the preceding step when none of the reception signal is detected; determining a number of level(s) of the reception signal, and returning to the preceding step if the number of level(s) is less than an expected level number; and comparing a signal-to-noise ratio of the reception signal with a signal-to-noise threshold, and returning to the preceding step when the signal-to-noise ratio fails to satisfy the signal-to-noise threshold.
    Type: Grant
    Filed: July 29, 2015
    Date of Patent: September 6, 2016
    Assignee: REALTEK SEMICONDUCTOR CORPORATION
    Inventors: Sheng-Fu Chuang, Liang-Wei Huang, Ching-Yao Su, Hsuan-Ting Ho
  • Publication number: 20160233920
    Abstract: A channel detection method for an echo canceller of a communication device is provided. The method includes the following steps. A first detection signal is transmitted to an end of a channel coupled to the communication device. A plurality of taps corresponding to a reflected signal of the first detection signal are received by an echo canceller at the end of the channel. The taps corresponding to the reflected signal are compared with a reference value corresponding to each of the taps so as to determine whether each of the taps is larger than or equal to the corresponding reference value. When the tap is determined to be larger than or equal to the reference value corresponding to the tap, the tap and a position of the tap are recorded.
    Type: Application
    Filed: January 25, 2016
    Publication date: August 11, 2016
    Inventors: Shih-Wei Wang, Liang-Wei Huang, Ching-Yao Su, Sheng-Fu Chuang
  • Publication number: 20160183811
    Abstract: A method of identifying a predetermined type of abnormal movement of a physical object includes generating a raw matrix comprising a first array and a second array, the generation of the raw matrix. The method also includes generating an integrated matrix by performing a dimension reduction on the raw matrix. The method a further includes identifying the predetermined type of abnormal movement of the physical object by comparing the integrated matrix or a set of indexes derived from the integrated matrix with a predetermined benchmark pattern corresponding to the predetermined type of abnormal movement. Generating the raw matrix includes a first analysis on a predetermined portion of a periodic signal representative of movement of the physical object to generate the first array. Generating the raw matrix also includes performing a second analysis different from the first analysis on the predetermined portion of the periodic signal to generate the second array.
    Type: Application
    Filed: March 8, 2016
    Publication date: June 30, 2016
    Inventors: Chuan-Wei TING, Ching-Yao WANG
  • Publication number: 20160172303
    Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
    Type: Application
    Filed: February 19, 2016
    Publication date: June 16, 2016
    Inventors: Tain-Shang Chang, Chia-Han Lai, Ren-Hau Yu, Ching-Yao Sun, Yu-Sheng Wang
  • Publication number: 20160155820
    Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.
    Type: Application
    Filed: February 8, 2016
    Publication date: June 2, 2016
    Applicant: RICHTEK TECHNOLOGY CORPORATION
    Inventors: Tsung-Yi Huang, Ching-Yao Yang, Wen-Yi Liao, Hung-Der Su, Kuo-Cheng Chang
  • Publication number: 20160132455
    Abstract: A control method applied to an Operating-Mode Finite-State-Machine (OPFSM) arranged for deciding a behavior of a first port of an apparatus includes: controlling the OPFSM to enter a second local state from a first local state and controlling the first port to send a signal with a wakeup pattern to a link partner of the first port when the state of the OPFSM is the first local state, and a wakeup request bit is a first local value.
    Type: Application
    Filed: March 12, 2015
    Publication date: May 12, 2016
    Inventors: Hsuan-Ting Ho, Liang-Wei Huang, Ching-Yao Su, Sheng-Fu Chuang
  • Publication number: 20160118434
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 28, 2016
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
  • Patent number: 9314177
    Abstract: The present application discloses a method of detecting abnormal movement of a physical object. A periodic signal is representative of the movement of the object. According to some embodiments, a raw matrix having a first array and a second array is generated, and then an integrated matrix is generated by performing a dimension reduction on the raw matrix. A likelihood of a predetermined type of abnormal movement of the physical object is determined by comparing the integrated matrix with a predetermined benchmark pattern. In some embodiments, the generation of the raw matrix includes performing a first analysis on a predetermined portion of the periodic signal to generate the first array and performing a second analysis different from the first analysis on the predetermined portion of the periodic signal to generate the second array.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: April 19, 2016
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chuan-Wei Ting, Ching-Yao Wang
  • Patent number: 9299607
    Abstract: In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
    Type: Grant
    Filed: February 13, 2014
    Date of Patent: March 29, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tain-Shang Chang, Chia-Han Lai, Ren-Hau Yu, Ching-Yao Sun, Yu-Sheng Wang
  • Publication number: 20160083702
    Abstract: The instant invention provides methods and related compositions for identifying polypeptides with improved stability and/or enzymatic activity in comparison to native forms, wherein the identified polypeptides comprise one or more non-natural amino acids. In certain embodiments, the present invention relates to novel phosphotriesterase enzymes comprising one or more non-natural amino acids. In a particular embodiment, the instant invention provides novel phosphotriesterase enzymes with greater stability and/or enhanced activity in comparison to native forms of the enzyme. The present invention also relates to compositions comprising novel phophotriesterase enzymes, such as prophylactics, decontaminants, animal feedstocks, and assay kits.
    Type: Application
    Filed: July 20, 2015
    Publication date: March 24, 2016
    Inventors: Jin Kim MONTCLARE, Richard Bonneau, P. Douglas Renfrew, Ching-Yao Yang, Carlo Yuvienco
  • Publication number: 20160079443
    Abstract: A JBS diode includes a silicon substrate, a first P doped region, a metal layer, a second P doped region, and a first N doped region. The silicon substrate includes an upper surface. An NBL is provided in the bottom of the silicon substrate. An N well is provided between the upper surface and the NBL. The first P doped region is arranged in the N well, and extending downward from the upper surface. The metal layer covers the upper surface, and located on a side of the first P doped region. The second P doped region is arranged in the N well, extending downward from the upper surface, and located at the other side of the first P doped region. The first N doped region is arranged in the N well, extending downward from the upper surface, and located at the other side of the first P doped region.
    Type: Application
    Filed: October 29, 2014
    Publication date: March 17, 2016
    Inventors: Chung-Yu Hung, Ching-Yao Yang, Tzu-Cheng Kao, Tsung-Yi Huang, Wu-Te Weng
  • Patent number: 9287394
    Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: March 15, 2016
    Assignee: RICHTEK TECHNOLOGY CORPORATION
    Inventors: Tsung-Yi Huang, Ching-Yao Yang, Wen-Yi Liao, Hung-Der Su, Kuo-Cheng Chang
  • Publication number: 20160065495
    Abstract: The present invention discloses a network connection establishing method capable of preventing a link procedure from being strangled in a training state. An embodiment of the method comprises: a preceding step; a training step; and a following step. Said training step includes at least one of the following: counting a number, and returning to the preceding step if a local receiver is not yet ready after finishing counting the number; detecting a reception signal according to a signal detection level, and returning to the preceding step when none of the reception signal is detected; determining a number of level(s) of the reception signal, and returning to the preceding step if the number of level(s) is less than an expected level number; and comparing a signal-to-noise ratio of the reception signal with a signal-to-noise threshold, and returning to the preceding step when the signal-to-noise ratio fails to satisfy the signal-to-noise threshold.
    Type: Application
    Filed: July 29, 2015
    Publication date: March 3, 2016
    Inventors: SHENG-FU CHUANG, LIANG-WEI HUANG, CHING-YAO SU, HSUAN-TING HO
  • Publication number: 20160036489
    Abstract: This invention discloses a signal receiving device for Ethernet and a control method thereof. The signal receiving device includes a gain control circuit, an alien near-end crosstalk canceller, a noise canceller, and a DFE. The gain control circuit adjusts an input signal of the signal receiving device according to a setting parameter. The alien near-end crosstalk canceller cancels an alien near-end crosstalk interference. The noise canceller uses a first filter to cancel noises. The DFE uses a second filter to cancel an inter-symbol interference of the input signal. The method includes steps of: temporarily stopping the gain control circuit from updating the setting parameter before a seed collision occurs, and temporarily stopping one of the noise canceller and the decision feedback canceller from updating the first filter coefficient of the first filter or the second filter coefficient of the second filter temporarily during the seed collision.
    Type: Application
    Filed: July 14, 2015
    Publication date: February 4, 2016
    Inventors: SHENG-FU CHUANG, LIANG-WEI HUANG, CHING-YAO SU, HSUAN-TING HO
  • Publication number: 20160014668
    Abstract: Techniques for energy efficiency utilizing the relay transmission mode of multiple device coordination (MDC) in a wireless communication system are described. For example, a method includes identifying, by a coordinating device including a processor, one or more devices associated with a same entity as the coordinating device, wherein the coordinating device and the one or more devices are part of a set of devices. The method also includes coordinating, by the coordinating device, with the one or more devices to enable a single radio resource connection (RRC) between the set of devices and a base station. The coordinating can include selecting a relay node device, from among the set of devices, to relay data transmitted from the set of devices during a relay transmission mode. The data is relayed to the base station using the single RRC, which is established through the relay node device.
    Type: Application
    Filed: June 17, 2015
    Publication date: January 14, 2016
    Inventors: Chie-Ming Chou, Ching-Yao Huang
  • Patent number: 9220310
    Abstract: Force diversion apparatus, methods and devices including the same result in rotational motion being imparted to an impacting object. The apparatus, methods and devices may include, or may involve the use of, a force conversion portion, secured to the outer surface of a bumper, and a force spreading portion.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: December 29, 2015
    Assignee: The Aerospace Corporation
    Inventors: Gary F. Hawkins, Ching-Yao Tang
  • Patent number: 9224773
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: December 29, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang