Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

Abstract: A device includes first to third power/ground (PG) elements; a first set of at least three tracks between the first and second PG elements and a second set of at least three tracks between the second and third PG elements, the tracks being arranged in equal numbers between the first and second PG and second and third PG elements; a first row of cells overlapping the first set; and a second row of cells overlapping the second set. In the first row of cells, a first cell has a first height and a second cell has a greater height than the first height; in the second row of cells, a third cell has the first height and a fourth cell has a lesser height less than the first height; and a track configured as an in-cell PG track is aligned with a boundary of the second and fourth cells.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. A metallic cross-linker is used with the metallic photoresist. The cross-linker comprises a metal core and a plurality of ligands. The ligands may comprise at least one vinyl group or at least one acetylene group; or comprise an acrylate; or comprise a cinnamate; or be unable to participate in a crosslinking reaction. Upon radiation exposure, the ligands separate from the metal core, and the metal core can crosslink, or the ligands may crosslink. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. Multiple different additive types are described for use with the metallic photoresist. The additives can be applied to the photoresist as part of existing solutions, or applied as an ingredient in a treatment solution during various steps for applying, patterning, and developing the metallic photoresist. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.

Abstract: The present disclosure provides resist rinse solutions and corresponding lithography techniques that achieve high pattern structural integrity for advanced technology nodes. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.

Abstract: A resist underlayer composition for extreme ultraviolet lithography is provided. The composition includes a first polymer, a second polymer, an acid generator and a solvent. The first polymer includes a first polymer backbone and an etching resistance enhancement unit covalently bonded to the first polymer backbone via a first linker. The etching resistance enhancement unit includes a silicon-containing unit including silicon-oxygen bonds or a metal-containing unit including metal-oxygen bonds. The second polymer includes a second polymer backbone and a crosslinker unit covalently bonded to the second polymer backbone via a second linker. The crosslinker unit includes one or more crosslinkable groups.

Abstract: The present invention discloses a diaphragm for a speaker including a lower surface area, a central area formed on said lower surface area, an upper surface area formed on said central area. The upper surface area, the central area and the lower surface area includes homogeneous amorphous materials. The diaphragm includes internal stress changing with a depth from the surface to the center of the diaphragm.

Abstract: A method of semiconductor fabrication includes forming a plurality of mandrel recesses in a mandrel layer over a hard mask layer, performing a first patterning process on a spacer layer that is deposited over the mandrel layer to form a first opening pattern, performing a second patterning process to etch portions of the mandrel layer to form a second opening pattern, performing a third patterning process to form a third opening pattern in the hard mask layer based on the first opening pattern and the second opening pattern, and forming, through the hard mask layer, metal lines that are in a semiconductor layer under the hard mask layer and that are arranged in a pattern which corresponds to the third opening pattern.

Abstract: A photoresist composition comprises an organic polymer and a floatable polymer. The floatable polymer has a lower surface energy than the organic polymer. Upon curing, the floatable polymer forms a surface layer above the photoresist layer formed by the organic polymer. The presence of the surface layer reduces optical flare and chemical flare, thus improving the critical dimension of the features formed in a material layer below the photoresist layer.

Abstract: A mobile device attachment adapted for a mobile device and a container for food or liquid is provided. The mobile device attachment includes a magnetic connecting member and a connecting member. The magnetic connecting member is selectively magnetically connected to the mobile device and adapted to extend in an escaping direction. The connecting member is disposed between the container and the magnetic connecting member. The mobile device has an image capturing range. When the magnetic connecting member extends in the escaping direction, the container, the magnetic connecting member and the connecting member are located outside the image capturing range. Besides, a container including the mobile device attachment is also provided.

Abstract: A transducer or pickup system amplifying musical instruments (such as, e.g., an acoustic guitar), including at least one magnet, at least one inductance coil coupled to the magnet(s), and an arc shaped housing enclosing magnet(s) and inductance coil(s). Some embodiments of the invention may provide unique sound characteristics due to comb filtering effects associated with an arc shape arrangement of magnets and/or coils in the pickup. In some embodiments the arc shaped pickup and/or housing may be placed within 7.0-7.5 inches of an edge of a guitar's bridge, and/or may be clamped to the edge of a guitar's sound hole, and/or may be aligned with a circumference of the sound hole. Different configurations are described with regard to nonlimiting embodiments.

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer from a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound, a thiol-containing polymer comprising an aryl group and an acid labile group. The thiol group can crosslink the polymer via oxidative disulfide formation and/or thiol-ene/yne “click” reaction.

Abstract: A photoresist composition includes a solvent and a polymer. The polymer comprises a polymer backbone, an acid labile group monomer, a photo acid generator monomer and a quencher monomer. The acid labile group monomer is bonded to the polymer backbone. The acid labile group monomer is acid cleavable. The photo acid generator monomer is bonded to the polymer backbone. The quencher monomer is bonded to the polymer backbone.

Abstract: A lithography method includes the steps which are mentioned below. A photoresist layer is formed over a substrate. The photoresist layer is exposed. The photoresist layer is developed. A vacuum treatment is performed to the photoresist layer. The substrate is etched by using the photoresist layer as an etch mask.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: This disclosure describes systems, methods, and devices related to service function chaining in wireless networks. A communications system may include a communication control function to select one or multiple communication service functions associated with establishing service function chaining (SFC) services for telecommunications; a service orchestration and chaining function (SOCF) to establish the SFC services; and a service orchestration exposure function (SOEF) to expose the SFC services to an application function (AF) of the system.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern disposed within a first region from a top view perspective and extending along a first direction, a first phase shift circuit disposed within the first region, a first transmission circuit disposed within a second region from the top view perspective, and a first gate conductor extending from the first region to the second region along a second direction perpendicular to the first direction. The first phase shift circuit and the first transmission circuit are electrically connected with the first conductive pattern through the first gate conductor.