Patents by Inventor Ching Yu

Ching Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250147417
    Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.
    Type: Application
    Filed: December 30, 2024
    Publication date: May 8, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Cheng LIU, Ming-Hui WENG, Jr-Hung LI, Yahru CHENG, Chi-Ming YANG, Tze-Liang LEE, Ching-Yu CHANG
  • Publication number: 20250147424
    Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.
    Type: Application
    Filed: January 6, 2025
    Publication date: May 8, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Hui WENG, Chen-Yu LIU, Cheng-Han WU, Ching-Yu CHANG, Chin-Hsiang LIN
  • Publication number: 20250151394
    Abstract: A device includes first to third power/ground (PG) elements; a first set of at least three tracks between the first and second PG elements and a second set of at least three tracks between the second and third PG elements, the tracks being arranged in equal numbers between the first and second PG and second and third PG elements; a first row of cells overlapping the first set; and a second row of cells overlapping the second set. In the first row of cells, a first cell has a first height and a second cell has a greater height than the first height; in the second row of cells, a third cell has the first height and a fourth cell has a lesser height less than the first height; and a track configured as an in-cell PG track is aligned with a boundary of the second and fourth cells.
    Type: Application
    Filed: November 8, 2023
    Publication date: May 8, 2025
    Inventors: Ching-Yu HUANG, Wei-Cheng TZENG, Wei-Cheng LIN, Chia-Tien WU, Ken-Hsien HSIEH, Jiann-Tyng TZENG
  • Publication number: 20250147414
    Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. A metallic cross-linker is used with the metallic photoresist. The cross-linker comprises a metal core and a plurality of ligands. The ligands may comprise at least one vinyl group or at least one acetylene group; or comprise an acrylate; or comprise a cinnamate; or be unable to participate in a crosslinking reaction. Upon radiation exposure, the ligands separate from the metal core, and the metal core can crosslink, or the ligands may crosslink. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.
    Type: Application
    Filed: November 3, 2023
    Publication date: May 8, 2025
    Inventors: Shi-Cheng Wang, An-Ren Zi, Ching-Yu Chang
  • Patent number: 12292684
    Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: May 6, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yu Liu, Tzu-Yang Lin, Ya-Ching Chang, Ching-Yu Chang, Chin-Hsiang Lin
  • Publication number: 20250138417
    Abstract: Methods and materials for improving the hardness of a metallic photoresist used in EUV photolithography are disclosed. Multiple different additive types are described for use with the metallic photoresist. The additives can be applied to the photoresist as part of existing solutions, or applied as an ingredient in a treatment solution during various steps for applying, patterning, and developing the metallic photoresist. The resulting photoresist layer has increased hardness and higher EUV light sensitivity, which permits a reduced radiation dosage.
    Type: Application
    Filed: October 31, 2023
    Publication date: May 1, 2025
    Inventors: Shi-Cheng Wang, An-Ren Zi, Ching-Yu Chang
  • Publication number: 20250138428
    Abstract: The present disclosure provides resist rinse solutions and corresponding lithography techniques that achieve high pattern structural integrity for advanced technology nodes. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.
    Type: Application
    Filed: January 6, 2025
    Publication date: May 1, 2025
    Inventors: Chien-Wei WANG, Wei-Han LAI, Ching-Yu CHANG
  • Publication number: 20250130499
    Abstract: A resist underlayer composition for extreme ultraviolet lithography is provided. The composition includes a first polymer, a second polymer, an acid generator and a solvent. The first polymer includes a first polymer backbone and an etching resistance enhancement unit covalently bonded to the first polymer backbone via a first linker. The etching resistance enhancement unit includes a silicon-containing unit including silicon-oxygen bonds or a metal-containing unit including metal-oxygen bonds. The second polymer includes a second polymer backbone and a crosslinker unit covalently bonded to the second polymer backbone via a second linker. The crosslinker unit includes one or more crosslinkable groups.
    Type: Application
    Filed: April 3, 2024
    Publication date: April 24, 2025
    Inventors: Yen-Yu KUO, An-Ren ZI, Ching-Yu CHANG
  • Publication number: 20250133344
    Abstract: The present invention discloses a diaphragm for a speaker including a lower surface area, a central area formed on said lower surface area, an upper surface area formed on said central area. The upper surface area, the central area and the lower surface area includes homogeneous amorphous materials. The diaphragm includes internal stress changing with a depth from the surface to the center of the diaphragm.
    Type: Application
    Filed: October 3, 2024
    Publication date: April 24, 2025
    Inventors: Kwun Kit CHAN, Yi Feng WEI, Chien-Hsing CHU, Ching-Yu HSIEH
  • Publication number: 20250125148
    Abstract: A method of semiconductor fabrication includes forming a plurality of mandrel recesses in a mandrel layer over a hard mask layer, performing a first patterning process on a spacer layer that is deposited over the mandrel layer to form a first opening pattern, performing a second patterning process to etch portions of the mandrel layer to form a second opening pattern, performing a third patterning process to form a third opening pattern in the hard mask layer based on the first opening pattern and the second opening pattern, and forming, through the hard mask layer, metal lines that are in a semiconductor layer under the hard mask layer and that are arranged in a pattern which corresponds to the third opening pattern.
    Type: Application
    Filed: October 13, 2023
    Publication date: April 17, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Chen LEE, Chia-Tien WU, Wei-Chen CHU, Hsi-Wen TIEN, Wei-Cheng TZENG, Ching-Yu HUANG, Wei-Cheng LIN, Ken-Hsien HSIEH
  • Publication number: 20250123562
    Abstract: A photoresist composition comprises an organic polymer and a floatable polymer. The floatable polymer has a lower surface energy than the organic polymer. Upon curing, the floatable polymer forms a surface layer above the photoresist layer formed by the organic polymer. The presence of the surface layer reduces optical flare and chemical flare, thus improving the critical dimension of the features formed in a material layer below the photoresist layer.
    Type: Application
    Filed: October 13, 2023
    Publication date: April 17, 2025
    Inventors: Ming-Hui Weng, Wei-Han Lai, Ching-Yu Chang
  • Patent number: 12274350
    Abstract: A mobile device attachment adapted for a mobile device and a container for food or liquid is provided. The mobile device attachment includes a magnetic connecting member and a connecting member. The magnetic connecting member is selectively magnetically connected to the mobile device and adapted to extend in an escaping direction. The connecting member is disposed between the container and the magnetic connecting member. The mobile device has an image capturing range. When the magnetic connecting member extends in the escaping direction, the container, the magnetic connecting member and the connecting member are located outside the image capturing range. Besides, a container including the mobile device attachment is also provided.
    Type: Grant
    Filed: November 1, 2023
    Date of Patent: April 15, 2025
    Assignee: EVOLUTIVE LABS CO., LTD.
    Inventors: Ching-Fu Wang, Ching-Yu Wang, Che-Wei Hsu, Jui-Chen Lu, Cheng-Che Ho
  • Publication number: 20250118281
    Abstract: A transducer or pickup system amplifying musical instruments (such as, e.g., an acoustic guitar), including at least one magnet, at least one inductance coil coupled to the magnet(s), and an arc shaped housing enclosing magnet(s) and inductance coil(s). Some embodiments of the invention may provide unique sound characteristics due to comb filtering effects associated with an arc shape arrangement of magnets and/or coils in the pickup. In some embodiments the arc shaped pickup and/or housing may be placed within 7.0-7.5 inches of an edge of a guitar's bridge, and/or may be clamped to the edge of a guitar's sound hole, and/or may be aligned with a circumference of the sound hole. Different configurations are described with regard to nonlimiting embodiments.
    Type: Application
    Filed: October 3, 2024
    Publication date: April 10, 2025
    Applicant: Fishman Transducers, Inc.
    Inventors: Lawrence FISHMAN, Ching-Yu LIN
  • Publication number: 20250116931
    Abstract: A photoresist composition includes a solvent and a polymer. The polymer comprises a polymer backbone, an acid labile group monomer, a photo acid generator monomer and a quencher monomer. The acid labile group monomer is bonded to the polymer backbone. The acid labile group monomer is acid cleavable. The photo acid generator monomer is bonded to the polymer backbone. The quencher monomer is bonded to the polymer backbone.
    Type: Application
    Filed: October 10, 2023
    Publication date: April 10, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Hui Weng, Wei-Han Lai, Ching-Yu Chang
  • Publication number: 20250116932
    Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer from a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound, a thiol-containing polymer comprising an aryl group and an acid labile group. The thiol group can crosslink the polymer via oxidative disulfide formation and/or thiol-ene/yne “click” reaction.
    Type: Application
    Filed: March 11, 2024
    Publication date: April 10, 2025
    Inventors: Li-Po YANG, Wei-Han LAI, Kuan-Hsin LO, Ching-Yu CHANG
  • Publication number: 20250116937
    Abstract: A lithography method includes the steps which are mentioned below. A photoresist layer is formed over a substrate. The photoresist layer is exposed. The photoresist layer is developed. A vacuum treatment is performed to the photoresist layer. The substrate is etched by using the photoresist layer as an etch mask.
    Type: Application
    Filed: October 4, 2023
    Publication date: April 10, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Hui WENG, Wei-Han LAI, Hsien-Chung HUANG, Ching-Yu CHANG
  • Patent number: 12272554
    Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.
    Type: Grant
    Filed: July 27, 2023
    Date of Patent: April 8, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jia-Lin Wei, Ming-Hui Weng, Chih-Cheng Liu, Yi-Chen Kuo, Yen-Yu Chen, Yahru Cheng, Jr-Hung Li, Ching-Yu Chang, Tze-Liang Lee, Chi-Ming Yang
  • Patent number: 12271113
    Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.
    Type: Grant
    Filed: January 15, 2021
    Date of Patent: April 8, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Cheng Liu, Yi-Chen Kuo, Jia-Lin Wei, Ming-Hui Weng, Yen-Yu Chen, Jr-Hung Li, Yahru Cheng, Chi-Ming Yang, Tze-Liang Lee, Ching-Yu Chang
  • Patent number: 12267225
    Abstract: This disclosure describes systems, methods, and devices related to service function chaining in wireless networks. A communications system may include a communication control function to select one or multiple communication service functions associated with establishing service function chaining (SFC) services for telecommunications; a service orchestration and chaining function (SOCF) to establish the SFC services; and a service orchestration exposure function (SOEF) to expose the SFC services to an application function (AF) of the system.
    Type: Grant
    Filed: May 3, 2022
    Date of Patent: April 1, 2025
    Assignee: Intel Corporation
    Inventors: Zongrui Ding, Qian Li, Ching-Yu Liao, Alexandre Saso Stojanovski, Sudeep Palat, Thomas Luetzenkirchen, Abhijeet Kolekar, Sangeetha Bangolae, Youn Hyoung Heo, Xiaopeng Tong
  • Patent number: 12265775
    Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern disposed within a first region from a top view perspective and extending along a first direction, a first phase shift circuit disposed within the first region, a first transmission circuit disposed within a second region from the top view perspective, and a first gate conductor extending from the first region to the second region along a second direction perpendicular to the first direction. The first phase shift circuit and the first transmission circuit are electrically connected with the first conductive pattern through the first gate conductor.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: April 1, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Wei Peng, Ching-Yu Huang, Jiann-Tyng Tzeng