Patents by Inventor Ching-Yu Chang

Ching-Yu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESIST DISPENSING SYSTEM AND METHOD OF USE
    Publication number: 20220308452
    Abstract: In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 29, 2022
    Inventors: Ya-Ching CHANG, Chen-Yu LIU, Ching-Yu CHANG, Chin-Hsiang LIN
  • Bump structure and method of manufacturing bump structure
    Patent number: 11456266
    Abstract: A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
    Type: Grant
    Filed: September 11, 2020
    Date of Patent: September 27, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ching-Yu Chang, Ming-Da Cheng, Ming-Hui Weng
  • Cleaning solution and method of cleaning wafer
    Patent number: 11456170
    Abstract: A cleaning solution includes a first solvent having Hansen solubility parameters 25>?d>13, 25>?p>3, and 30>?h>4; an acid having an acid dissociation constant, pKa, of ?11<pKa<4, or a base having a pKa of 40 > pKa>9.5; and a surfactant. The surfactant is one or more of an ionic surfactant, a polyethylene oxide and a polypropylene oxide, a non-ionic surfactant, and combinations thereof.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: September 27, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: An-Ren Zi, Ching-Yu Chang
  • ADJUSTABLE FASTENING DEVICE FOR PLASMA GAS INJECTORS
    Publication number: 20220301822
    Abstract: An embodiment is an apparatus, such as a plasma chamber. The apparatus includes chamber walls and a chamber window defining an enclosed space. A chamber window is disposed between a plasma antenna and a substrate support. A gas delivery source is mechanically coupled to the chamber window. The gas delivery source comprises a gas injector having a passageway, a window at a first end of the passageway, and a nozzle at a second end of the passageway. The nozzle of the gas delivery source is disposed in the enclosed space. A fastening device is mechanically coupled to the gas delivery source. The fastening device is adjustable to adjust a sealing force against the gas injector.
    Type: Application
    Filed: June 6, 2022
    Publication date: September 22, 2022
    Inventors: Yung-Shun HSU, Ching-Yu CHANG, Chiao-Kai CHANG, Wai Hong CHEAH, Chien-Fang LIN
  • LITHOGRAPHY TECHNIQUES FOR REDUCING DEFECTS
    Publication number: 20220299879
    Abstract: A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.
    Type: Application
    Filed: March 18, 2021
    Publication date: September 22, 2022
    Inventors: Ming-Hui WENG, Ching-Yu CHANG
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20220291587
    Abstract: A method for manufacturing a semiconductor device includes forming a resist structure including forming a resist layer including a resist composition over a substrate. After forming the resist layer, the resist layer is treated with an additive. The additive is one or more selected from the group consisting of a radical inhibitor, a thermal radical initiator, and a photo radical initiator.
    Type: Application
    Filed: September 22, 2021
    Publication date: September 15, 2022
    Inventors: An-Ren Zi, Ching-Yu Chang
  • UNDERLAYER COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20220291586
    Abstract: A method for manufacturing a semiconductor device includes forming a resist underlayer over a substrate. The resist underlayer includes an underlayer composition, including: a polymer with pendant photoacid generator (PAG) groups, pendant thermal acid generator (TAG) groups, a combination of pendant PAG and pendant TAG groups, pendant photobase generator (PBG) groups, pendant thermal base generator (TBG) groups, or a combination of pendant PBG and pendant TBG groups. A photoresist layer including a photoresist composition is formed over the resist underlayer. The photoresist layer is selectively exposed to actinic radiation. The selectively exposed photoresist layer is developed to form a pattern in the photoresist layer.
    Type: Application
    Filed: September 27, 2021
    Publication date: September 15, 2022
    Inventors: Ming-Hui WENG, Chen-Yu LIU, Ching-Yu CHANG
  • Materials and methods for forming resist bottom layer
    Patent number: 11442364
    Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: September 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jing Hong Huang, Chien-Wei Wang, Shang-Wern Chang, Ching-Yu Chang
  • PATTERN FORMATION METHOD AND MATERIAL FOR MANUFACTURING SEMICONDUCTOR DEVICES
    Publication number: 20220260918
    Abstract: In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 18, 2022
    Inventors: Chien-Wei WANG, Ching-Yu CHANG, Shang-Wern CHANG, Yen-Hao CHEN
  • PHOTORESIST DEVELOPER AND METHOD OF DEVELOPING PHOTORESIST
    Publication number: 20220244639
    Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.
    Type: Application
    Filed: April 11, 2022
    Publication date: August 4, 2022
    Inventors: An-Ren ZI, Chin-Hsiang LIN, Ching-Yu CHANG, Joy CHENG
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20220230889
    Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.
    Type: Application
    Filed: April 4, 2022
    Publication date: July 21, 2022
    Inventors: Yen-Hao CHEN, Wei-Han LAI, Ching-Yu CHANG, Chin-Hsiang LIN
  • Grafting design for pattern post-treatment in semiconductor manufacturing
    Patent number: 11387104
    Abstract: A method for lithography patterning includes forming an opening in a first layer over a substrate and coating a grafting solution over the first layer and filling in the opening. The grafting solution comprises a grafting compound and a solvent. The grafting compound comprises a grafting unit chemically bonded to a linking unit chemically bonded to a polymer backbone. The grafting unit is attachable to the first layer. The method further includes curing the grafting solution so that a first portion of the grafting compound is attached to a surface of the first layer, thereby forming a second layer over the surface of the first layer. The method further includes transferring a pattern including the first layer and the second layer to the substrate.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: July 12, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Siao-Shan Wang, Ching-Yu Chang, Chin-Hsiang Lin
  • Extreme ultraviolet photoresist and method
    Patent number: 11378884
    Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate. The photoresist layer includes at least an acid labile group (ALG) and a thermo-base generator (TBG). The method further includes exposing a portion of the photoresist layer to a radiation and performing a baking process after the exposing of the portion of the photoresist layer. The TBG releases a base during the performing of the baking process, resulting in a chemical reaction between the ALG and the base. The method further includes removing an unexposed portion of the photoresist layer, resulting in a patterned photoresist layer.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: July 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen-Yu Liu, Ya-Ching Chang, Cheng-Han Wu, Ching-Yu Chang, Chin-Hsiang Lin
  • Underlayer Material for Photoresist
    Publication number: 20220187711
    Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.
    Type: Application
    Filed: March 8, 2022
    Publication date: June 16, 2022
    Inventors: An-Ren ZI, Wei-Han Lai, Ching-Yu Chang
  • Adjustable fastening device for plasma gas injectors
    Patent number: 11361943
    Abstract: An embodiment is an apparatus, such as a plasma chamber. The apparatus includes chamber walls and a chamber window defining an enclosed space. A chamber window is disposed between a plasma antenna and a substrate support. A gas delivery source is mechanically coupled to the chamber window. The gas delivery source comprises a gas injector having a passageway, a window at a first end of the passageway, and a nozzle at a second end of the passageway. The nozzle of the gas delivery source is disposed in the enclosed space. A fastening device is mechanically coupled to the gas delivery source. The fastening device is adjustable to adjust a sealing force against the gas injector.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: June 14, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yung-Shun Hsu, Ching-Yu Chang, Chiao-Kai Chang, Wai Hong Cheah, Chien-Fang Lin
  • Filter with seal treatment
    Patent number: 11351509
    Abstract: In accordance with an embodiment, a filter membrane is sealed with a sealing material prior to using the filter membrane to filter process fluids. The sealing material is a fluorine-based polymer or a polymer with a cross-linking group. Once the sealing material has been placed in contact with the filter membrane, a cross-linking reaction may be initiated using either physical or chemical processes to cross-link the sealing material and to seal the filter membrane within the sealing material, thereby separating the filter membrane from the process fluids, reducing or eliminating leaching of the filter membrane into the process fluid.
    Type: Grant
    Filed: July 23, 2014
    Date of Patent: June 7, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Hsin Lo, Ching-Yu Chang
  • Adjustable fastening device for plasma gas injectors
    Patent number: 11355318
    Abstract: An embodiment is an apparatus, such as a plasma chamber. The apparatus includes chamber walls and a chamber window defining an enclosed space. A chamber window is disposed between a plasma antenna and a substrate support. A gas delivery source is mechanically coupled to the chamber window. The gas delivery source comprises a gas injector having a passageway, a window at a first end of the passageway, and a nozzle at a second end of the passageway. The nozzle of the gas delivery source is disposed in the enclosed space. A fastening device is mechanically coupled to the gas delivery source. The fastening device is adjustable to adjust a sealing force against the gas injector.
    Type: Grant
    Filed: October 16, 2020
    Date of Patent: June 7, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yung-Shun Hsu, Ching-Yu Chang, Chiao-Kai Chang, Wai Hong Cheah, Chien-Fang Lin
  • Pattern formation method and material for manufacturing semiconductor devices
    Patent number: 11320738
    Abstract: In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: May 3, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Wei Wang, Ching-Yu Chang, Shang-Wern Chang, Yen-Hao Chen
  • Humidity control in EUV lithography
    Patent number: 11307504
    Abstract: A layer is formed over a wafer. The layer contains a material that is sensitive to an extreme ultraviolet (EUV) radiation. A first baking process is performed to the layer. The first baking process is performed with a first humidity level that is greater than about 44%. After the first baking process, the layer is exposed to EUV radiation. A second baking process is performed to the layer. The second baking process is performed with a second humidity level that is greater than about 44%. The layer is rinsed with a liquid that contains water before the second baking process or after the second baking process. After the exposing, the layer is developed with a developer solution that contains water.
    Type: Grant
    Filed: June 18, 2020
    Date of Patent: April 19, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: An-Ren Zi, Chin-Hsiang Lin, Ching-Yu Chang, Joy Cheng
  • Photoresist developer and method of developing photoresist
    Patent number: 11300878
    Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: April 12, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: An-Ren Zi, Chin-Hsiang Lin, Ching-Yu Chang, Joy Cheng