Abstract: A network connection control system and method is provided. The network connection control system includes user equipments, base stations, a server and first and second processing units. Each user equipment transmits a network parameter between it and every base station to the server through the base station connected therewith. The first processing unit assigns CIO set values corresponding to the base station. The network connection control system is configured to perform an optimizing procedure. In the optimizing procedure, according to the CIO set values, the network parameters, the throughput objective function and connection and network resource constraints of all the user equipments and base stations, the first and second processing units processes based on classical algorithm and quantum annealing algorithm respectively to obtain the optimized connection configuration.

Abstract: A method for producing ferroelectric thin films using a substrate capable of generating a polarization field is disclosed. This method involves providing a substrate that can produce an electric field effect on its surface, followed by growing a first thin film layer on this substrate through an epitaxial process, and then further growing a second thin film layer on the first thin film layer. The second thin film layer develops ferroelectric properties due to the electric field effect generated by the substrate's surface, causing two atomic layers within the second thin film layer to exhibit ferroelectric characteristics through misaligned stacking epitaxial growth.

Abstract: A load balancing system and method is provided. The load balancing system includes a core network, CPEs (customer premise equipments), user equipments, and a load balancing equipment. The CPEs receive signals from the core network and connect to each other through a network topology. The user equipments are connected to the CPEs. The load balancing equipment is connected to one CPE, and the load balancing equipment confirms a throughput limit of each CPE and includes a data analysis module and a processing unit. The data analysis module receives network parameters between the CPEs and the user equipments, and calculates premise throughputs of the CPEs. The processing unit generates a route control table according to the premise throughputs. According to the route control table, the CPEs adjusts signal transmission between the CPEs and the user equipments to balance the premise throughputs of the CPEs.

Abstract: A spread spectrum switching converter converts an input power to an output power. The spread spectrum switching converter includes a pulse width modulation (PWM) circuit and a pulse omission control circuit. The PWM circuit generate an initial PWM signal according to a feedback signal related to the output power. The initial PWM signal controls at least one switch to switch an inductor to generate the output power. The pulse omission control circuit generates a pulse omission control signal to mask a portion of pulses of the initial PWM signal, to thereby generate an adjusted PWM signal. The pulse omission control circuit randomly adjusts the pulse width of the pulse omission control signal according to a random control signal, such that the adjusted PWM signal has a spread spectrum characteristic.

Abstract: A compound or a pharmaceutically acceptable salt thereof, and a pharmaceutical composition thereof are provided, wherein the compound includes a retinoic acid conjugated with a carbohydrate. In addition, use of the compound or the pharmaceutically acceptable salt thereof or the pharmaceutical composition in the manufacture of a medicament for inhibiting infection or replication of a virus or for treating a cancer is also provided.

Abstract: A pharmaceutical composition including a retinoic acid and a carbohydrate is provided. The pharmaceutical composition may further include a metal ion. Use of the pharmaceutical composition in the manufacture of a medicament for inhibiting infection or replication of a virus or for treating a cancer is also provided. The pharmaceutical composition can enhance the inhibition ability of virus infection and/or or replication in comparison with the retinoic acid used only.

Abstract: A fast charging lithium-ion battery includes a positive electrode plate, a negative electrode plate, a separator, and an electrolyte. The positive electrode plate includes a positive current collector and a positive active material layers. The negative electrode plate includes a negative current collector and negative active material layers. The negative active material layers include titanium niobium oxide, lithium titanate, or a combination thereof. The separator is disposed between the positive electrode plate and the negative electrode plate. The electrolyte contacts the positive electrode plate and the negative electrode plate. The negative active material layers have an effective area corresponding to the positive electrode plate. The negative active material layers have a thickness on one surface of the negative current collector. A ratio of the effective area to the thickness is greater than 2×105 mm.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: A network connection control system and method is provided. The network connection control system includes user equipments, base stations, a server and first and second processing units. Each user equipment transmits a network parameter between it and every base station to the server through the base station connected therewith. The first processing unit assigns CIO set values corresponding to the base station. The network connection control system is configured to perform an optimizing procedure. In the optimizing procedure, according to the CIO set values, the network parameters, the throughput objective function and connection and network resource constraints of all the user equipments and base stations, the first and second processing units processes based on classical algorithm and quantum annealing algorithm respectively to obtain the optimized connection configuration.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

Abstract: A spread spectrum switching converter converts an input power to an output power. The spread spectrum switching converter includes a pulse width modulation (PWM) circuit and a pulse omission control circuit. The PWM circuit generate an initial PWM signal according to a feedback signal related to the output power. The initial PWM signal controls at least one switch to switch an inductor to generate the output power. The pulse omission control circuit generates a pulse omission control signal to mask a portion of pulses of the initial PWM signal, to thereby generate an adjusted PWM signal. The pulse omission control circuit randomly adjusts the pulse width of the pulse omission control signal according to a random control signal, such that the adjusted PWM signal has a spread spectrum characteristic.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AIN).

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: An electrode plate includes a metal foil, a first active material layer directly disposed on the top surface of the metal foil, and a second active material layer directly disposed on the bottom surface of the metal foil. The crystalline system of the first active material layer is different from that of the second active material layer.

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

Abstract: A cooling system includes a fan and a system component. The fan includes a plurality of fan blades and configured to rotate in a fan direction. The system component is located downstream of the fan, and includes a cutout for passing of airflow from the fan, and a bridge spanning the cutout. The bridge includes a center section and at least one arm section extending from the center section to an edge of the cutout along a curved path offset towards the fan direction.

Abstract: A system and a method for evaluating noise cancelling capability are provided, and the system and method are configured to evaluate a noise cancelling capability of an external device. The system includes a mixer, a player, a recorder and a comparator. The mixer receives and mixes a target audio file and a noise audio file and outputs a mix audio file. The player is connected to the mixer for receiving the mix audio file. The player outputs a first audio signal to the external device. The external device cancels the noise of the first audio signal and outputs a second audio signal. The recorder receives the second audio signal and outputs a noise-cancelled audio file. The comparator is connected to the recorder for receiving the noise-cancelled audio file. The comparator compares the noise-cancelled audio file and the target audio file and outputs an evaluation report according to a comparing result.

Abstract: A fast charging lithium-ion battery includes a positive electrode plate, a negative electrode plate, a separator, and an electrolyte. The positive electrode plate includes a positive current collector and a positive active material layers. The negative electrode plate includes a negative current collector and negative active material layers. The negative active material layers include titanium niobium oxide, lithium titanate, or a combination thereof. The separator is disposed between the positive electrode plate and the negative electrode plate. The electrolyte contacts the positive electrode plate and the negative electrode plate. The negative active material layers have an effective area corresponding to the positive electrode plate. The negative active material layers have a thickness on one surface of the negative current collector. A ratio of the effective area to the thickness is greater than 2×105 mm.