Abstract: An antenna structure and an electronic device are provided. The antenna structure includes a feeding source, a main radiation portion, a metal portion, and a grounding portion. The main radiation portion is signally connected to the feeding source. There is a first gap between the metal portion and the main radiation portion. There is a second gap between the grounding portion and the metal portion, and there is a third gap between the grounding portion and the main radiation portion. The main radiation portion couples with the metal portion via the first gap, and the grounding portion couples with the metal portion via the second gap.

Abstract: A semiconductor structure and a method of forming the same are disclosed. A method of forming a semiconductor structure includes the following operations. An insulating layer is formed over a substrate. A metal feature is formed in the insulating layer. An argon-containing plasma treatment is performed to the insulating layer and the metal feature.

Abstract: A communication device includes a metal mechanism element, a loop radiation element, a first radiation element, and a second radiation element. The metal mechanism element has a slot. The loop radiation element is coupled to the metal mechanism element. The first radiation element has a feeding point. The first radiation element is coupled to a first connection point on the loop radiation element. The second radiation element is coupled to a second connection point on the loop radiation element. Both the first radiation element and the second radiation element are disposed inside the loop radiation element. An antenna structure is formed by the metal mechanism element, the loop radiation element, the first radiation element, and the second radiation element.

Abstract: An antenna structure and an electronic device are provided. The electronic device includes a housing and an antenna structure disposed in the housing. The antenna structure includes a carrier having a first carrying part and a second carrying part connected to each other, a switching circuit, a first radiating element, and a second radiating element. A thickness of the first carrying part is greater than a thickness of the second carrying part. The second carrying part includes a circuit layer and a ground layer respectively formed on opposite surfaces of the second carrying part. The switching circuit is located on the circuit layer. The first radiating element and the second radiating element are disposed on the carrier and respectively electrically connected to a feed element and the switching circuit. The second radiating element and the first radiating element are apart from and couple with each other.

Abstract: A semiconductor structure and a method of forming the same are disclosed. A method of forming a semiconductor structure includes the following operations. An insulating layer is formed over a substrate. A metal feature is formed in the insulating layer. An argon-containing plasma treatment is performed to the insulating layer and the metal feature.

Abstract: An sealing device for a display device is provided. The display device includes a display surface and an outer periphery surface. The sealing device comprises a base and a sealing ring component. The base has an inner side surface and an inner bottom surface. The sealing ring component is disposed in the base along the inner side surface. The sealing ring component is propped against the outer periphery surface without in contact with the display surface when the display device is arranged on the base, and then a to-be-evacuated space is formed between the display surface and the inner bottom surface.

Abstract: The processor comprises multiple sub-systems. Each sub-system is configured to generate a voltage switching signal. The processor also comprises a packetizing module coupled to the sub-systems. The packetizing module packetizes multiple voltage switching signals generated by the sub-systems to a packet. The processor also comprises a PMIF (power management interface) configured to receive the packet and output the packet.

Abstract: The present invention relates to a method for producing a carbon fiber. In the method for producing the carbon fiber, a high pure acrylonitrile monomer with specific contents of impurities and a comonomer are used to produce an acrylonitrile copolymer, and the acrylonitrile copolymer is subjected to a spinning operation, a stretching operation, an oxidation treatment and a carbonization treatment in sequence, for obtaining the carbon fiber. The acrylonitrile copolymer with an appropriate falling-ball viscosity and an appropriate weight-average molecular weight is beneficial to the spinning operation, thereby reducing an inner pore diameter and enhancing strength of the resulted carbon fiber.

Abstract: A structure including a redistribution structure comprising dielectric layers and conductive layers alternately stacked is provided, wherein a dielectric layer among the dielectric layers of the redistribution structure comprises a first surface, a conductive layer among the conductive layers of the redistribution structure comprising a second surface, and the conductive layer comprises a wiring layer and a seed layer; and an under-bump metallization (UBM) layer comprises a third surface, a fourth surface opposite to the third surface, and a sidewall surface extending from the third surface to the fourth surface, wherein a portion of the seed layer is between the wiring layer and the UBM layer, and the UBM is in contact with the dielectric layer

Abstract: Carbon fiber and method of forming the same are provided. The method modifies proportion of a finishing oil to control a relation between a surface tension and a particle size of the finishing oil, and thus penetration of the finishing oil into an interior of the carbon fiber is avoided. Therefore, the carbon fiber can have both low oil residues and a high strength.

Abstract: A mobile device includes an NFC (Near Field Communication) antenna including a metal coil and a first dielectric substrate, a coupling metal element, and a second dielectric substrate. The metal coil is disposed on the first dielectric substrate. The coupling metal element is adjacent to the metal coil. The coupling metal element does not directly touch the metal coil. The coupling metal element is disposed on the second dielectric substrate. The coupling metal element is configured to adjust the operational frequency of the NFC antenna.

Abstract: An organic semiconductor substrate includes a base, a first conductive pattern, a second conductive pattern, a first metal oxide pattern, a second metal oxide pattern, an organic flat pattern layer, a source, a drain, an organic semiconductor pattern, an organic gate insulating layer, and a gate. The first conductive pattern and the second conductive pattern are disposed on the base and separated from each other. The first metal oxide pattern and the second metal oxide pattern respectively cover and are electrically connected to the first conductive pattern and the second conductive pattern, respectively. A first portion of the organic flat pattern layer is disposed between the first metal oxide pattern and the second metal oxide pattern. A surface of the first metal oxide pattern has a first distance from the base. A surface of the first portion of the organic flat pattern layer has a second distance from the base. The second distance is less than or equal to the first distance.

Abstract: An electronic device and an antenna structure thereof are provided. The antenna structure includes a first, a second and a third radiating element and a grounding element. The first radiating element includes a first and a second radiating portion, a feeding portion and a grounding portion. The grounding portion includes a first, a second, a third, a fourth and a fifth section. The first section is connected between the first radiating portion and the feeding portion. The grounding element is connected with the fourth section and the fifth section. The second radiating element is connected with the grounding element. The second radiating element includes a third radiating portion, and the third and the second radiating portion are coupled with each other. The third radiating element is connected with the feeding portion, and the third radiating element and the first section are coupled with each other.

Abstract: A clamp assembly includes at least one clamp which is provided to clamp a workpiece in electroless plating, etching, electroplating or cleaning process. The clamp includes a base, a clamping element and a limiting element. The base is mounted on a carrier and includes a guide hole and a first limiting hole which are communicated with each other. The clamping element includes a guide rod and a second limiting hole, the guide rod is inserted into the guide hole to allow the second limiting hole located on the guide hole to be communicated with the first limiting hole. The limiting element is inserted into the first and second limiting holes to integrate the base with the clamping element for clamping the workpiece.

Abstract: A flexible printed circuit and an antenna structure are provided. The flexible printed circuit has a main body part and a bending part and includes a substrate, two copper foil layers, and two coverlays. The substrate includes a first surface and a second surface, and one surface of each of the two copper foil layers is disposed on the first surface and the second surface of the substrate, respectively. Each of the two coverlays is disposed on another surface of each of the two copper foil layers. Each of the two coverlays includes at least two coverlay holes, and the at least two coverlay holes penetrate through the coverlay and are disposed on the main body part.

Abstract: An antenna structure and an electronic device are provided. The antenna structure includes a first radiating member, a second radiating member, a grounding member, and a capacitance element. The first radiating member includes a first radiating part, a second radiating part, a feeding part, and a grounding part. The second radiating member is coupling to the first radiating member. The second radiating member includes a third radiating part and a main body part that are connected to each other. There is a first predetermined length between a feeding point of the feeding part and an open end of the second radiating part. There is an electrical length between a connection point where the main body part is electrically connected to the capacitance element and an open end of the third radiating part. The electrical length is greater than the first predetermined length.

Abstract: An optoelectronic tweezer device includes a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located above the transparent substrate and includes a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region. The first electrode is located on the first doping region and is electrically connected to the first doping region. The dielectric layer is located above the semiconductor layer and has a first through hole overlapping the first electrode.

Abstract: A semiconductor structure and a method of forming the same are disclosed. A method of forming a semiconductor structure includes the following operations. An insulating layer is formed over a substrate. A metal feature is formed in the insulating layer. An argon-containing plasma treatment is performed to the insulating layer and the metal feature.

Abstract: An electronic device and an antenna structure thereof are provided. The antenna structure includes a first, a second and a third radiating element and a grounding element. The first radiating element includes a first and a second radiating portion, a feeding portion and a grounding portion. The grounding portion includes a first, a second, a third, a fourth and a fifth section. The first section is connected between the first radiating portion and the feeding portion. The grounding element is connected with the fourth section and the fifth section. The second radiating element is connected with the grounding element. The second radiating element includes a third radiating portion, and the third and the second radiating portion are coupled with each other. The third radiating element is connected with the feeding portion, and the third radiating element and the first section are coupled with each other.