Patents by Inventor Chishio Koshimizu

Chishio Koshimizu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10529539
    Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
    Type: Grant
    Filed: October 11, 2016
    Date of Patent: January 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Koshiishi, Masaru Sugimoto, Kunihiko Hinata, Noriyuki Kobayashi, Chishio Koshimizu, Ryuji Ohtani, Kazuo Kibi, Masashi Saito, Naoki Matsumoto, Manabu Iwata, Daisuke Yano, Yohei Yamazawa, Hidetoshi Hanaoka, Toshihiro Hayami, Hiroki Yamazaki, Manabu Sato
  • Patent number: 10529596
    Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: January 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Matsumoto, Chishio Koshimizu, Akira Koshiishi
  • Publication number: 20190311888
    Abstract: The plasma processing apparatus includes a chamber body, a stage, a gas supply mechanism, a DC power supply, a radio-frequency power supply, and a controller. The gas supply is configured to supply a heat transfer gas to the upper surface of the electrostatic chuck. The controller is configured to control the DC power supply. The controller controls the DC power supply to apply, to the electrostatic chuck, a voltage derived by combining an output of a first function that outputs a smaller value as the absolute value of a self-bias voltage generated according to the plasma becomes larger and an output of a second function that outputs a larger value as the pressure of the heat transfer gas supplied to the upper surface of the electrostatic chuck by the gas supply increases.
    Type: Application
    Filed: April 5, 2019
    Publication date: October 10, 2019
    Inventor: Chishio Koshimizu
  • Publication number: 20190221405
    Abstract: Disclosed is a plasma processing apparatus including a processing chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.
    Type: Application
    Filed: March 28, 2019
    Publication date: July 18, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun YAMAWAKU, Chishio KOSHIMIZU, Tatsuo MATSUDO
  • Patent number: 10325758
    Abstract: A plasma processing apparatus includes a plasma generation unit configured to convert a processing gas supplied into a processing chamber into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil arranged adjacent to the processing chamber through a dielectric window, a second high frequency antenna having a natural resonant frequency and formed of a vortex coil arranged at an outer or inner peripheral side of the first high frequency antenna, and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from the high frequency power supply toward the first high frequency antenna. The circuit viewed from the high frequency power supply toward the first high frequency antenna is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when a frequency of high frequency power is changed.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: June 18, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Jun Yamawaku, Tatsuo Matsudo, Chishio Koshimizu
  • Patent number: 10283328
    Abstract: Disclosed is a plasma processing apparatus including a chamber configured to perform a processing on a wafer by plasma, a VF power supply configured to change a frequency of a high frequency power to be supplied into the chamber, a susceptor configured to mount the wafer thereon, and a focus ring disposed to surround the wafer. A first route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the wafer and the plasma, and a second route, which passes through the plasma starting from the VF power supply, passes through the susceptor, the focus ring and the plasma. The reflection minimum frequency of the first route is different from the reflection minimum frequency of the second route, and the frequency range changeable by the VF power supply includes the reflection minimum frequencies of the first and second routes.
    Type: Grant
    Filed: December 10, 2014
    Date of Patent: May 7, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yamawaku, Chishio Koshimizu, Tatsuo Matsudo
  • Publication number: 20190115188
    Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((?/4)+n?/2) by a fractional shortening (? is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.
    Type: Application
    Filed: December 10, 2018
    Publication date: April 18, 2019
    Inventors: Jun YAMAWAKU, Tatsuo MATSUDO, Chishio KOSHIMIZU
  • Publication number: 20190108975
    Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((?/4)+n?/2) by a fractional shortening (? is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.
    Type: Application
    Filed: December 10, 2018
    Publication date: April 11, 2019
    Inventors: Jun YAMAWAKU, Tatsuo MATSUDO, Chishio KOSHIMIZU
  • Patent number: 10211031
    Abstract: Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a VF power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the VF power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the VF power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: February 19, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Chishio Koshimizu, Jun Yamawaku
  • Publication number: 20180308662
    Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
    Type: Application
    Filed: June 7, 2018
    Publication date: October 25, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yohei YAMAZAWA, Masashi SAITO, Kazuki DENPOH, Chishio KOSHIMIZU, Jun YAMAWAKU
  • Publication number: 20180294137
    Abstract: A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.
    Type: Application
    Filed: June 11, 2018
    Publication date: October 11, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Chishio KOSHIMIZU, Naoki Matsumoto, Satoshi Tanaka, Toru Ito
  • Publication number: 20180231369
    Abstract: A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data.
    Type: Application
    Filed: April 13, 2018
    Publication date: August 16, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Chishio KOSHIMIZU, Tatsuo MATSUDO
  • Publication number: 20180218884
    Abstract: There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.
    Type: Application
    Filed: March 26, 2018
    Publication date: August 2, 2018
    Inventors: Jun Yamawaku, Chishio Koshimizu
  • Patent number: 9997332
    Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: June 12, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Masashi Saito, Kazuki Denpoh, Chishio Koshimizu, Jun Yamawaku
  • Patent number: 9952032
    Abstract: A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: April 24, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Chishio Koshimizu, Tatsuo Matsudo
  • Patent number: 9941097
    Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
    Type: Grant
    Filed: April 11, 2014
    Date of Patent: April 10, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku
  • Publication number: 20180061681
    Abstract: There is provided a plasma processing apparatus, including: a chamber main body; a plasma trap installed inside a chamber provided by the chamber main body, and configured to divide the chamber into a first space and a second space; a mounting table installed in the second space; a plasma source configured to excite gases supplied to the first space; and a potential adjustment part including an electrode to be capacitively coupled to a plasma generated in the first space, and configured to adjust a potential of the plasma.
    Type: Application
    Filed: August 24, 2017
    Publication date: March 1, 2018
    Inventors: Chishio KOSHIMIZU, Tatsuo MATSUDO
  • Patent number: 9899191
    Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
    Type: Grant
    Filed: April 11, 2014
    Date of Patent: February 20, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yohei Yamazawa, Chishio Koshimizu, Masashi Saito, Kazuki Denpoh, Jun Yamawaku
  • Publication number: 20180015510
    Abstract: Disclosed is a processing apparatus for performing a processing on a workpiece using gas clusters. The processing apparatus includes: a processing container in which the workpiece is disposed, and an inside of which is maintained in a vacuum state; an exhaust mechanism that exhausts an atmosphere in the processing container; a gas supply unit that supplies a gas containing a cluster generating gas; a cluster nozzle provided in the processing container and configured to generate gas clusters by adiabatically expanding the cluster generating gas and inject a gas component containing the generated gas clusters into the processing container; and a plasma generating mechanism that generates plasma in the cluster nozzle portion. The gas clusters are ionized by the plasma generated in the cluster nozzle portion, and the ionized gas clusters are injected from the cluster nozzle and irradiated onto the workpiece, so that a predetermined processing is performed.
    Type: Application
    Filed: September 26, 2017
    Publication date: January 18, 2018
    Inventors: Kazuya Dobashi, Chishio Koshimizu
  • Publication number: 20170162406
    Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
    Type: Application
    Filed: February 14, 2017
    Publication date: June 8, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: NAOKI MATSUMOTO, CHISHIO KOSHIMIZU, AKIRA KOSHIISHI