Abstract: A control method of a plasma processing apparatus including a first electrode and a second electrode includes supplying a bias power to the first electrode, and supplying a negative DC voltage to the second electrode. The negative DC voltage periodically repeats a first state that takes a first voltage value and a second state that takes a second voltage value having an absolute value smaller than the first voltage value. The control method further includes a first control process of applying the first state of the negative DC voltage in a partial time period within each cycle of a signal synchronized with a cycle of a radio frequency of the bias power, or in a partial time period within each cycle of a periodically varying parameter measured in a transmission path of the bias power, and applying the second state continuously with the first state.

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.

Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

Abstract: The disclosed plasma processing apparatus includes a plasma processing chamber, a substrate support, a bias power source, and a radio frequency power source. The substrate support is disposed in the plasma processing chamber and includes an electrode. The bias power source is coupled to the electrode and configured to generate a bias power having a first frequency. The radio frequency power source is coupled to the plasma processing chamber and configured to generate a radio frequency power having a second frequency higher than the first frequency. The radio frequency power has a first power level in a first period within one cycle of the bias power and has a second power level lower than the first power level in a second period within one cycle of the bias power.

Abstract: A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power.

Abstract: A plasma processing method according to an exemplary embodiment includes preparing a substrate in a chamber of a plasma processing apparatus. The substrate is disposed on a substrate support in the chamber. The substrate support includes a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. The plasma processing method further includes applying a positive voltage to a conductive member when plasma is being generated in the chamber for plasma processing on the substrate. The conductive member extends closer to a grounded side wall of the chamber than the substrate.

Abstract: There is provided a plasma processing apparatus including: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a dielectric member having a substrate supporting surface; a first filter element disposed in the dielectric member, the first filter element having a first terminal and a second terminal; and a first electrode disposed in the dielectric member, the first electrode being electrically connected to the first terminal. The plasma processing apparatus includes an RF generator coupled to the plasma processing chamber and configured to generate an RF signal; and a first DC generator electrically connected to the second terminal and configured to generate a DC signal.

Abstract: A detecting method includes: supplying a bias power to a lower electrode, and supplying a source power to an upper electrode or the lower electrode; and detecting an output value of a sensor attached to a chamber. The detecting the output value of the sensor includes (a) specifying a first phase of a bias waveform for each cycle of the bias waveform, (b) specifying a second phase of a source waveform after a predetermined first time elapses from a timing when the first phase is specified, and (c) sampling the output value of the sensor after a predetermined second time elapses from a timing when the second phase is specified. The steps (a) to (c) are repeated for each cycle of the bias waveform.

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

Abstract: There is provided a plasma processing apparatus for performing plasma processing or a substrate, comprising: a chamber; a substrate support disposed in the chamber and including a base, an electrostatic chuck on the base, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a Radio Frequency (RF) power supply for supplying RF power for generating plasma from gases in the chamber; a DC power supply for applying a negative DC voltage to the edge ring; a waveform control element for controlling a waveform of the DC voltage; and a controller for controlling a time taken for the DC voltage to reach a desired value by adjusting a constant of the waveform control element.

Abstract: A plasma processing apparatus disclosed herein includes a chamber, a substrate support, an upper electrode, and at least one power supply. The chamber provides a processing space therein. The substrate support is provided in the chamber. The upper electrode configures a shower head that introduces a gas into the processing space from above the processing space. The upper electrode includes a first electrode and a second electrode. The first electrode provides a plurality of first gas holes opened toward the processing space. The second electrode is provided directly or indirectly on the first electrode and provides a plurality of second gas holes communicating with the plurality of first gas holes. The at least one power supply is configured to set a potential of the second electrode to a potential higher than a potential of the first electrode.

Abstract: There is a plasma processing apparatus comprising: a chamber; a substrate support configured to support a substrate and an edge ring; high-frequency power supply configured to generate first high-frequency power via the substrate and second high-frequency power via the edge ring; and bias power supply configured to generate first electric bias energy supplied to the substrate and second electric bias energy supplied to the edge ring, wherein the first electric bias energy and the second electric bias energy have a waveform repeatedly at a cycle, the cycle includes a first period in which voltage of each of the first and second electric bias energies has a positive level with respect to an average value of the voltage within the cycle, and a second period in which the voltage of each of the first and second electric bias energies has a negative level with respect to the average value.

Abstract: A plasma processing apparatus includes: a first electrode on which a substrate is placed; a plasma generation source that generates plasma; a bias power supply that supplies bias power to the first electrode; a source power supply that supplies source power to the plasma generation source; and a controller. The controller performs a control such that a first state and a second state of the source power are alternately applied in synchronization with a high frequency cycle of the bias power, or a phase within one cycle of a reference electrical state indicating any one of a voltage, a current and an electromagnetic field measured in a power feed system of the bias power, and performs a control to turn OFF the source power at least at a negative side peak of the phase within one cycle of the reference electrical state.

Abstract: A plasma processing apparatus includes a container; a stage disposed in the container and including an electrode; a plasma source that generates plasma in the container; a bias power supply that periodically supplies a pulsed negative DC voltage to the electrode; an edge ring disposed to surround a substrate placed on the stage; and a DC power supply that supplies a DC voltage to the edge ring. The DC power supply supplies a first DC voltage in a first time period when the pulsed negative DC voltage is not supplied to the electrode, and supplies a second DC voltage in a second time period when the pulsed negative DC voltage is supplied to the electrode.

Abstract: A substrate support is provided in a chamber of a plasma processing apparatus according to an exemplary embodiment. The substrate support has a lower electrode and an electrostatic chuck. A matching circuit is connected between a power source and the lower electrode. A first electrical path connects the matching circuit and the lower electrode to each other. A second electrical path different from the lower electrode is provided to supply electric power from the matching circuit to a focus ring. A sheath adjuster is configured to adjust a position of an upper end of a sheath on/above the focus ring. A variable impedance circuit is provided on the first or second electrical path.

Abstract: A plasma processing apparatus disclosed herein includes a substrate support provided in a chamber; a radio-frequency power supply configured to supply radio-frequency power to generate plasma in the chamber; and a bias power supply configured to supply electric bias energy to an electrode to draw ions into a substrate on the substrate support. The electric bias energy has a cycle having a time length reciprocal to a bias frequency. The radio-frequency power supply is further configured to adjust an output power level of the radio-frequency power in a plurality of phase periods in the cycle such that an evaluation value is less than or equal to a first value, the evaluation value being a power level of reflected waves of the radio-frequency power or a value of a ratio of the power level to the output power level.

Abstract: In a disclosed inspection method, a substrate and an edge ring are placed on first and second regions, respectively. A first inspection circuit is connected to the substrate. The first inspection circuit has impedance. A second inspection circuit is connected to the edge ring. The second inspection circuit has impedance. A first electrical bias and a second electrical bias having a common bias frequency are applied to a first electrode in the first region and a second electrode in the second region, respectively. A voltage waveform of the substrate and a voltage waveform of the edge ring is acquired by using a waveform monitor.

Abstract: A processing method includes: disposing a workpiece in a processing container of a processing apparatus, and maintaining an inside of the processing container in a vacuum state; providing a cluster nozzle in the processing container; supplying a cluster generating gas to the cluster nozzle and adiabatically expanding the cluster generating gas in the cluster nozzle, thereby generating gas clusters; generating plasma in the cluster nozzle to ionize the gas clusters and injecting the ionized gas clusters onto the workpiece; supplying a reactive gas to the cluster nozzle and exposing the reactive gas to the plasma such that the reactive gas becomes monomer ions or radicals; and supplying the monomer ions or radicals to the processing container, thereby exerting a chemical reaction on a substance present on a surface of the workpiece.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support including a bias electrode, an RF power source configured to generate RF power to generate plasma in the plasma processing chamber, an edge ring disposed to surround a substrate on the substrate support, a ring electrode disposed to surround the edge ring, a first bias RF power source and a second bias RF power source. The first bias RF power source is configured to supply a first bias RF power to the bias electrode, the first bias RF power having a first frequency and a first power level. The second bias RF power source is configured to supply a second bias RF power to the ring electrode, the second bias RF power having the first frequency and a second power level and the second bias RF power being synchronized with the first bias RF power.

Abstract: A substrate support disclosed herein includes a base and an electrostatic chuck (ESC). The ESC is located on the base. The base and the electrostatic chuck provide a first region configured to support a substrate and a second region extending to surround the first region and configured to support an edge ring. The first region or the second region includes a variable capacitor portion configured to have variable electrostatic capacitance.