Patents by Inventor Chou Lin

Chou Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Infrared Ray Generation Mesh
    Publication number: 20200124278
    Abstract: An infrared ray generation mesh adapted to a combustion device comprising a mesh body which includes a first surface and a second surface positioned back-to-back, and a peripheral edge which has a first part and a second part on opposite sites. Wherein, the mesh body is bent or folded integrally to form a plurality of corrugations, each of the corrugations extending from the first part to the second part; and the mesh body is flame heated to generate infrared rays. Whereby, the infrared ray generation mesh improves accumulation of thermal energy generated by open fire, such that the heating range of infrared rays is getting wider and the infrared intensity per unit area is higher to achieve better heat control.
    Type: Application
    Filed: October 18, 2018
    Publication date: April 23, 2020
    Applicant: Grand Mate Co., Ltd.
    Inventors: Chung-Chin Huang, Chin-Ying Huang, Hsin-Ming Huang, Hsing-Hsiung Huang, Yen-Jen Yeh, Kuan-Chou Lin
  • Combustion Device
    Publication number: 20200124277
    Abstract: A combustion device includes at least one burner, a supporting assembly, and an infrared ray generation mesh wherein, the at least one burner includes a flame outlet, and the infrared ray generation mesh which is corresponding to the flame outlet is disposed on a rear cover of the supporting assembly. An outer surface of the infrared ray generation mesh is exposed outside. The infrared ray generation mesh is heated by flames out of the flame outlet. Whereby, open fire and thermal energy of the infrared ray can be generated so as to effectively increase heating intensity and realize uniformly heating as well.
    Type: Application
    Filed: October 18, 2018
    Publication date: April 23, 2020
    Inventors: Chung-Chin Huang, Chin-Ying Huang, Hsin-Ming Huang, Hsing-Hsiung Huang, Yen-Jen Yeh, Kuan-Chou Lin
  • Lubricatable ball spline device
    Patent number: 10619672
    Abstract: A lubricatable ball spline device includes a ball spline shaft, a ball nut slidably sleeved on the ball spline shaft and having oil guide holes, a linear bearing unit mounted between the ball spline shaft and the ball nut, a bearing ring rotatably sleeved on the ball nut and having an oil supplying hole, a positioning portion disposed between the bearing ring and the ball nut, and an oil passage corresponding to the oil supplying hole. The oil supplying hole, the oil passage, an oil storage space of the positioning portion and any one of the oil guide holes cooperatively form a continuous oil path.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: April 14, 2020
    Assignee: Hiwin Technologies Corp.
    Inventors: Wei-Chou Lin, Cheng-Ming Su, Cheng-Lung Wang, Po-Jung Huang
  • Three-dimensional modeling method and system thereof
    Patent number: 10621791
    Abstract: A three-dimensional modeling method and a three-dimensional modeling system are provided.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: April 14, 2020
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Po-Fu Yen, Zhong-Yi Haung, Shang-Yi Lin, Kang-Chou Lin, Tung-Fa Liou, Yung-Cheng Cheng
  • SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR
    Publication number: 20200105864
    Abstract: A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.
    Type: Application
    Filed: June 12, 2019
    Publication date: April 2, 2020
    Inventors: Hong-Yang CHEN, Tian Sheng LIN, Yi-Cheng CHIU, Hung-Chou LIN, Yi-Min CHEN, Kuo-Ming WU, Chiu-Hua CHUNG
  • Noise-reduced capacitive sensing unit
    Patent number: 10578575
    Abstract: A noise-reduced capacitive sensing unit is disclosed. The noise-reduced capacitive sensing unit includes: a sensing plate; a first bias voltage source for providing a first bias voltage; a second bias voltage source for providing a second bias voltage; a switch unit, connected between two bias voltage sources and the sensing plate, for selectively providing one of the bias voltages to the sensing plate; an excitation signal source for providing a bi-level waveform; a reference capacitor, formed between the excitation signal source and the sensing plate, for injecting the excitation signal to the sensing plate; and a voltage follower for providing sensing results, wherein an input node of the voltage follower is connected to the sensing plate.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: March 3, 2020
    Assignee: SunASIC Technologies, Inc.
    Inventors: Chi-Chou Lin, Zheng-Ping He
  • ELECTRICAL CONNECTOR ASSEMBLY WITH MATED PLUG CONNECTOR AND RECEPTACLE CONNECTOR
    Publication number: 20200067221
    Abstract: An electrical assembly includes mated plug connector and receptacle connector. The plug connector includes an insulative main body, a flat flexible cable attached upon the main body, a rotatable presser assembled upon the main body and retaining the flat flexible cable in position, and a metallic unitary latch assembled upon the main body with pair of resilient latches on two opposite lateral sides.
    Type: Application
    Filed: August 21, 2019
    Publication date: February 27, 2020
    Inventors: RUI-QIN WANG, WEI-CHOU LIN, YU-KE CHEN, YEN-CHIH CHANG, SHIH-WEI HSIAO
  • METAL INTERCONNECT STRUCTURE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20200058544
    Abstract: A method for fabricating metal interconnect structure includes the steps of: forming a first metal interconnection in a first inter-metal dielectric (IMD) layer on a substrate; forming a cap layer on the first metal interconnection; forming a second IMD layer on the cap layer; performing a first etching process to remove part of the second IMD layer for forming an opening; performing a plasma treatment process; and performing a second etching process to remove polymers from bottom of the opening.
    Type: Application
    Filed: September 18, 2018
    Publication date: February 20, 2020
    Inventors: Yi-How Chou, Tzu-Hao Fu, Tsung-Yin Hsieh, Chih-Sheng Chang, Shih-Chun Tsai, Kun-Chen Ho, Yang-Chou Lin
  • BOOTSTRAP METAL-OXIDE-SEMICONDUCTOR (MOS) DEVICE INTEGRATED WITH A HIGH VOLTAGE MOS (HVMOS) DEVICE AND A HIGH VOLTAGE JUNCTION TERMINATION (HVJT) DEVICE
    Publication number: 20200058647
    Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a bootstrap metal-oxide-semiconductor (MOS) device is integrated with a high voltage metal-oxide-semiconductor (HVMOS) device and a high voltage junction termination (HVJT) device. In some embodiments, a drift well is in the semiconductor substrate. The drift well has a first doping type and has a ring-shaped top layout. A first switching device is on the drift well. A second switching device is on the semiconductor substrate, at an indent in a sidewall the drift well. A peripheral well is in the semiconductor substrate and has a second doping type opposite the first doping type. The peripheral well surrounds the drift well, the first switching device, and the second switching device, and further separates the second switching device from the drift well and the first switching device.
    Type: Application
    Filed: October 24, 2019
    Publication date: February 20, 2020
    Inventors: Karthick Murukesan, Wen-Chih Chiang, Chiu-Hua Chung, Chun Lin Tsai, Kuo-Ming Wu, Shiuan-Jeng Lin, Tien Sheng Lin, Yi-Min Chen, Hung-Chou Lin, Yi-Cheng Chiu
  • HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR (HVMOS) DEVICE INTEGRATED WITH A HIGH VOLTAGE JUNCTION TERMINATION (HVJT) DEVICE
    Publication number: 20200044014
    Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.
    Type: Application
    Filed: October 15, 2019
    Publication date: February 6, 2020
    Inventors: Karthick Murukesan, Wen-Chih Chiang, Chun Lin Tsai, Ker-Hsiao Huo, Kuo-Ming Wu, Po-Chih Chen, Ru-Yi Su, Shiuan-Jeng Lin, Yi-Min Chen, Hung-Chou Lin, Yi-Cheng Chiu
  • Gas mixer
    Patent number: 10551055
    Abstract: A gas mixer includes at least one outlet pipe and a base having an inlet portion and a mixing portion. The inlet portion has an air inlet, at least one gas inlet, and an air path. The air path communicates with the air inlet and the at least one gas inlet, and has an exit. The mixing portion has a mixing chamber communicating with the exit. The outlet pipe is engaged with the mixing portion of the base, and extends into the mixing chamber. The exit of the air path corresponds to a body of the outlet pipe. Therefore, air and gas can be effectively premixed and outputted to a burner, whereby to accurately control the air-fuel ratio to enhance the combustion efficiency of the burner.
    Type: Grant
    Filed: May 5, 2017
    Date of Patent: February 4, 2020
    Assignee: GRAND MATE CO., LTD.
    Inventors: Chung-Chin Huang, Chin-Ying Huang, Hsin-Ming Huang, Hsing-Hsiung Huang, Yen-Jen Yeh, Wei-Long Chen, Kuan-Chou Lin, Tang-Yuan Luo
  • GAS BURNER
    Publication number: 20200025371
    Abstract: A gas burner includes a first tube and a second tube, wherein the first tube includes a first section and a second section which are connected to each other; the second section includes a chamber and an air outlet disposed at one side of the chamber; a cross-sectional area of the chamber of the second section is larger than a cross-sectional area of one end of the first section communicating with the second section. The second tube includes an air inlet section, a venturi section, and an extending section, wherein one end of the air inlet section includes an air inlet; the air inlet is adapted to supply gas; the venturi section is between the air inlet section and the extending section; the extending section extends into the chamber of the second section of the first tube and has a cross-sectional area small than the cross-sectional area of the chamber.
    Type: Application
    Filed: July 19, 2018
    Publication date: January 23, 2020
    Applicant: GRAND MATE CO., LTD.
    Inventors: CHUNG-CHIN HUANG, CHIN-YING HUANG, HSIN-MING HUANG, HSING-HSIUNG HUANG, YEN-JEN YEH, KUAN-CHOU LIN
  • High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device
    Patent number: 10535730
    Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: January 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Karthick Murukesan, Wen-Chih Chiang, Chun Lin Tsai, Ker-Hsiao Huo, Kuo-Ming Wu, Po-Chih Chen, Ru-Yi Su, Shiuan-Jeng Lin, Yi-Min Chen, Hung-Chou Lin, Yi-Cheng Chiu
  • COMBUSTION DEVICE
    Publication number: 20200011524
    Abstract: A combustion device includes a first cover, a second cover, an infrared generating mesh, and a gas burner assembly, wherein the first cover has a plurality of through holes. A first half portion of the second cover has at least one hollow portion. A second half portion of the second cover is closed. The infrared generating mesh is disposed between the first cover and the second cover. A flame outlet of the gas burner assembly is located within a projection area of the second half portion. In this way, the intensity of the infrared rays generated by the combustion device could be increased and could be uniform.
    Type: Application
    Filed: November 27, 2018
    Publication date: January 9, 2020
    Applicant: GRAND MATE CO., LTD.
    Inventors: CHUNG-CHIN HUANG, CHIN-YING HUANG, HSIN-MING HUANG, HSING-HSIUNG HUANG, YEN-JEN YEH, KUAN-CHOU LIN
  • SECURE SYSTEM ON CHIP FOR PROTECTING SOFTWARE PROGRAM FROM TAMPERING, REHOSTING AND PIRACY AND METHOD FOR OPERATING THE SAME
    Publication number: 20190370439
    Abstract: A secure system on chip that prevents a software program from being tampered, rehosted, and pirated is disclosed. The secure system on chip includes: a processor; a memory unit, wherein at least a portion thereof is configured into a protected memory area by limiting the read, write, and/or execute right thereof; a memory protection unit (MPU), connected between the processor and the memory unit, for managing access of the memory unit from the processor; and a memory signature unit, connected to the processor and the memory unit, having a read-only register stored with a memory signature extracted from contents stored in a specified memory area of the memory unit by a signature extraction signal received from the processor, wherein the memory signature unit is connected to the memory unit via a Direct Memory Access (DMA) channel.
    Type: Application
    Filed: May 29, 2018
    Publication date: December 5, 2019
    Inventors: Chi Chou LIN, Zheng Ping HE
  • Combustor
    Patent number: 10495302
    Abstract: A combustor is provided, including a pipe and a burner tray. The pipe is transverse U-shaped, including a first pipe section and a second pipe section. The first pipe section has an inlet, and the second pipe section has an outlet extending along an axial direction thereof. The second pipe section has at least one reduced section, wherein a smallest sectional area in the reduced section is smaller than sectional areas on both sides of the reduced section. The burner tray is connected to the second pipe section, provided over the outlet, and has a plurality of flame holes which communicate with the outlet. Whereby, with the reduced section, the flow including gas could be evenly delivered to the burner tray. As a result, after the gas exhausted through the flame holes is ignited, the combustion range would be evener, which enhances the combustion efficiency.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: December 3, 2019
    Assignee: GRAND MATE CO., LTD.
    Inventors: Chung-Chin Huang, Chin-Ying Huang, Hsin-Ming Huang, Hsing-Hsiung Huang, Yen-Jen Yeh, Wei-Long Chen, Kuan-Chou Lin, Tang-Yuan Luo
  • Method of ensuring safety of exhaust of water heater
    Patent number: 10488078
    Abstract: A method of ensuring the safety of exhaust of a water heater includes the following steps: A. start the blower and detect a rotational speed of a motor thereof; B. determine a first range based on the detected rotational speed; C. start the blower and detect the rotational speed of the motor when the water heater is restarted again; D. keep supplying gas to the burner for combustion when the rotational speed detected in step C is within the first range. During operation, a second range is determined by detecting the rotational speed of the motor after an outlet water temperature reaches a corresponding constant temperature range; the rotational speed is continuously detected, and the gas supply is stopped if the detected rotational speed is out of the second range. Thereby, the result of the method would be more accurate regardless of the actual installed status of the exhaust pipe.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: November 26, 2019
    Assignee: GRAND MATE CO., LTD.
    Inventors: Chung-Chin Huang, Chin-Ying Huang, Hsin-Ming Huang, Hsing-Hsiung Huang, Yen-Jen Yeh, Kuan-Chou Lin
  • Water heater having secondary heat exchanger
    Patent number: 10473407
    Abstract: A water heater includes a combustion device, a primary heat exchanger, and a secondary heat exchanger. The combustion device burns gas to generate high-temperature air. The primary and the secondary heat exchangers are provided sequentially above the combustion device. When the high-temperature air passes through the primary heat exchanger, part of thermal energy is absorbed by exchange plates and a water pipe therein. When the high-temperature air continues to pass through the secondary heat exchanger, part of the rest thermal energy is absorbed by a heat tube set therein to preheat water flowing through the heat tube set. The preheated water then flows into the water pipe of the primary heat exchanger. The secondary heat exchanger includes a case and a cover board which detachably seals a bore on the case. Whereby, it is convenient for a user to clean pipes inside the secondary heat exchanger.
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: November 12, 2019
    Assignee: GRAND MATE CO., LTD.
    Inventors: Chung-Chin Huang, Chin-Ying Huang, Hsin-Ming Huang, Hsing-Hsiung Huang, Yen-Jen Yeh, Kuan-Chou Lin
  • TUNING WORK FUNCTION OF P-METAL WORK FUNCTION FILMS THROUGH VAPOR DEPOSITION
    Publication number: 20190326120
    Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 24, 2019
    Inventors: Guoqiang JIAN, WEI TANG, CHI-CHOU LIN, PAUL MA, YIXIONG YANG, MEI CHANG, WENYI LIU
  • Guide vane
    Patent number: D869395
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: December 10, 2019
    Assignee: GRAND MATE CO., LTD.
    Inventors: Chung-Chin Huang, Chin-Ying Huang, Hsin-Ming Huang, Hsing-Hsiung Huang, Yen-Jen Yeh, Wei-Long Chen, Kuan-Chou Lin, Tang-Yuan Luo