Abstract: A reverse conducting insulated gate bipolar transistor (RC-IGBT) includes an active area in a semiconductor body. The active area includes an IGBT area, a diode area, a transition area laterally adjacent to the diode area, trenches extending into the semiconductor body from a first surface of the semiconductor body, and a drift region of a first conductivity type that includes lifetime killing impurities in the transition area. The active area further includes a barrier region of the first conductivity type between the drift region and the first surface. A maximum doping concentration in the barrier region is at least 100 times larger than an average doping concentration in the drift region. The barrier region laterally extends through at least part of the transition area, and laterally ends in or before the diode area. The RC-IGBT further includes an edge termination area at least partly surrounding the active area.

Abstract: The present invention relates i.a. to a recombinant avian coronavirus spike protein or fragment thereof comprising a mutation at amino acid position 267 to Cysteine. Further, the present invention relates to an immunogenic composition comprising an avian coronavirus with such spike protein.

Abstract: Disclosed is a battery cell including an electrode, a housing, a cell interior inside the housing, a temperature sensor, and a heat-conducting part which differs from the electrode, is entirely or partially disposed inside the housing of the battery cell, and is thermally connected to the temperature sensor.

Abstract: A diode is proposed. The diode includes: a semiconductor body having opposing first and second main surfaces; an anode region and a cathode region, the anode region being arranged between the first main surface and the cathode region; an anode pad area electrically connected to the anode region; and trenches extending into semiconductor body from the first main surface. A first group of the trenches includes a first trench electrode. The first trench electrode is subdivided into at least a first part and a second part. A conductance per unit length of the first part along a longitudinal direction of the first trench electrode is by at least a factor of 1000 smaller than a conductance per unit length of the second part along the longitudinal direction of the first trench electrode. The second part is electrically coupled to the anode pad area via the first part.

Abstract: A calibration method includes (a) connecting a impedance measuring device to an impedance standard which has at least two excitation terminals for feeding an excitation signal and two measuring terminals for determining a measurement signal, and which has a fixed or adjustable impedance which corresponds to the impedance target; (b) applying a voltage signal to the excitation terminals and measuring the current flowing through the impedance standard due to the voltage signal at the measuring terminals; or supplying a current signal to the excitation terminals and measuring the dropping voltage at the measuring terminals; and (c) calibrating the impedance measuring device against the impedance standard to the impedance target. The geometrical arrangement of terminals of the impedance standard corresponds to the geometrical arrangement of the terminals of the cell of which the impedance is to be measured.

Abstract: A diode is proposed. The diode includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface. The diode further includes an anode region and a cathode region. The anode region is arranged between the first main surface and the cathode region. An anode pad area is electrically connected to the anode region. The diode further includes a plurality of trenches extending into the semiconductor body from the first main surface. A first group of the plurality of trenches includes a first trench electrode. A second group of the plurality of trenches includes a second trench electrode. The first trench electrode is electrically coupled to the anode pad area via an anode wiring line and the second trench electrode.

Abstract: The present invention relates i.a. to a recombinant avian coronavirus spike protein or fragment thereof comprising a mutation at amino acid position 267 to Cysteine. Further, the present invention relates to an immunogenic composition comprising an avian coronavirus with such spike protein.

Abstract: An insulated gate bipolar transistor (IGBT) is proposed. The IGBT includes a semiconductor body having a first surface and a second surface. The IGBT further includes an active area and an edge termination area that at least partly surrounds the active area. The active area includes a first part of an active IGBT area and a second part of the active IGBT area. The IGBT further includes a contact on the second surface of the semiconductor body. A minimum vertical distance between the contact in the first part of the active IGBT area and a reference level at the first surface is larger than a minimum vertical distance between the contact in the second part of the active IGBT area and the reference level at the first surface.

Abstract: The present invention relates i.a. to a 4/91 IBV (infectious bronchitis virus) encoding for a heterologous S (spike) protein or fragment thereof. Further, the present invention relates to an immunogenic composition comprising said 4/91 IBV encoding for a heterologous S (spike) protein or fragment thereof. Furthermore, the present invention relates to methods for immunizing a subject comprising administering to such subject the immunogenic composition of the present invention. Moreover, the present invention relates to methods of treating or preventing clinical signs caused by IBV in a subject of need, the method comprising administering to the subject a therapeutically effective amount of an immunogenic composition according to the present invention.

Abstract: The present invention relates i.a. to an H52 IBV (infectious bronchitis virus) encoding for a heterologous S (spike) protein or fragment thereof. Further, the present invention relates to an immunogenic composition comprising said H52 IBV encoding for a heterologous S (spike) protein or fragment thereof. Furthermore, the present invention relates to methods for immunizing a subject comprising administering to such subject the immunogenic composition of the present invention. Moreover, the present invention relates to methods of treating or preventing clinical signs caused by IBV in a subject of need, the method comprising administering to the subject a therapeutically effective amount of an immunogenic composition according to the present invention.

Abstract: A semiconductor device includes a transistor that has: a drift region of a first conductivity type in a semiconductor substrate having a first main surface; a body region of a second conductivity type between the drift region and the first main surface; a plurality of trenches in the first main surface and patterning the semiconductor substrate into a plurality of mesas including a first mesa and a plurality of dummy mesas, the plurality of trenches including an active trench and a plurality of dummy trenches arranged in a row; a gate electrode arranged in the active trench; and a source region of the first conductivity type in the first mesa. The first mesa is arranged adjacent to the active trench. A dummy mesa is arranged between each adjacent pair of the dummy trenches. The dummy mesas do not carry load current during an on-state of the transistor.

Abstract: A method for ascertaining an operating variable of a drum brake, the method using forces acting on supporting bearings. The invention further relates to an associated drum brake assembly, an associated analysis unit and an associated storage medium.

Abstract: A semiconductor device includes a transistor having a drift region of a first conductivity type in a semiconductor substrate having a first main surface, a body region of a second conductivity type between the drift region and first main surface, and trenches in the first main surface which pattern the substrate into mesas. The trenches include an active trench and first and second source trenches. A source region of the first conductivity type is in a first mesa arranged adjacent to the active trench. A second mesa between the first and second source trenches is in contact with at least one source trench. A barrier region of the first conductivity type at a higher doping concentration than the drift region is arranged between the body and drift regions in the second mesa. A vertical size of the barrier region is at least twice a width of the second mesa.

Abstract: The abutment of a drum brake is formed from a solid material which deforms under load, wherein measurement devices are provided which detect this deformation. The abutment has two limbs, on which the brake shoes are supported. The changing distance between the two brake shoes under load is determined by detecting the distance between extension rods on the limbs by a measurement device comprising magnets and Hall sensors or AMR sensors.

Abstract: A power semiconductor device includes an active cell region with a drift region of a first conductivity type, a plurality of IGBT cells arranged within the active cell region, each of the IGBT cells includes at least one trench that extends into the drift, an edge termination region surrounding the active cell region, a transition region arranged between the active cell region and the edge termination region, at least some of the IGBT cells are arranged within or extend into the transition region, a barrier region of a second conductivity type, the barrier region is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells and does not extend into the transition region, and a first load terminal and a second load terminal, the power semiconductor device is configured to conduct a load current along a vertical direction between.

Abstract: A vertical power semiconductor device includes a semiconductor body having opposing first and second main surfaces. At least part of a gate trench structure formed at the first main surface extends along a first lateral direction. Body and source regions directly adjoin the gate trench structure. A drift region is arranged between the body region and second main surface. A body contact structure includes first and second body contact sub-regions spaced at a first lateral distance along the first lateral direction. Each body contact sub-region directly adjoins the gate trench structure and has a larger doping concentration than the body region. In a channel region between the body contact sub-regions, the body contact structure has a second lateral distance to the gate trench structure along a second lateral direction perpendicular to the first lateral direction. The first lateral distance is equal to or less than twice the second lateral distance.

Abstract: A power device includes: a diode section; a semiconductor body; a drift region extending into the diode section; trenches in the diode section and extending along a vertical direction into the semiconductor body, two adjacent trenches defining a respective mesa portion in the semiconductor body; a body region in the mesa portions; in the diode section, a barrier region between the body and drift regions and having a dopant concentration at least 100 times greater than an average dopant concentration of the drift region and a dopant dose greater than that of the body region. The barrier region has a lateral structure according to which at least 50% of the body region in the diode section is coupled to the drift region at least by the barrier region, and at least 5% of the body region in the diode section is coupled to the drift region without the barrier region.

Abstract: The present invention relates i.a. to a recombinant avian coronavirus spike protein or fragment thereof comprising a mutation at amino acid position 267 to Cysteine. Further, the present invention relates to an immunogenic composition comprising an avian coronavirus with such spike protein.

Abstract: A semiconductor device includes an IGBT in an IGBT portion of a semiconductor body and a diode in a diode portion of the semiconductor body. The diode includes an anode region of a first conductivity type and confined by diode trenches along a first lateral direction. Each of the diode trenches includes a diode trench electrode and a diode trench dielectric. A first contact groove extends into the anode region along a vertical direction from the first surface of the semiconductor body. An anode contact region of the first conductivity type adjoins a bottom side of the first contact groove. A cathode contact region of a second conductivity type adjoins a second surface of the semiconductor body opposite to the first surface. The IGBT includes a gate trench including a gate electrode and a gate dielectric, a source region, an emitter electrode, a drift region, and a second contact groove.

Abstract: An RC IGBT includes, in an active region, an IGBT section and at least three diode sections. The arrangement of the diode sections obeys a design rule.