Abstract: A semiconductor device includes a transistor having a drift region of a first conductivity type in a semiconductor substrate having a first main surface, a body region of a second conductivity type between the drift region and first main surface, and trenches in the first main surface which pattern the substrate into mesas. The trenches include an active trench and first and second source trenches. A source region of the first conductivity type is in a first mesa arranged adjacent to the active trench. A second mesa between the first and second source trenches is in contact with at least one source trench. A barrier region of the first conductivity type at a higher doping concentration than the drift region is arranged between the body and drift regions in the second mesa. A vertical size of the barrier region is at least twice a width of the second mesa.

Abstract: An RC IGBT with an n-barrier region in a transition section between a diode section and an IGBT section is presented.

Abstract: A power device includes: a diode section; a semiconductor body; a drift region extending into the diode section; trenches in the diode section and extending along a vertical direction into the semiconductor body, two adjacent trenches defining a respective mesa portion in the semiconductor body; a body region in the mesa portions; in the diode section, a barrier region between the body and drift regions and having a dopant concentration at least 100 times greater than an average dopant concentration of the drift region and a dopant dose greater than that of the body region. The barrier region has a lateral structure according to which at least 50% of the body region in the diode section is coupled to the drift region at least by the barrier region, and at least 5% of the body region in the diode section is coupled to the drift region without the barrier region.

Abstract: A power semiconductor device has a semiconductor body coupled to first and second load terminal structures, the semiconductor body configured to conduct a load current during a conducting state of the device and having a drift region. The power semiconductor device includes a plurality of cells, each cell having: a first mesa in a first cell portion, the first mesa including: a first port region, and a first channel region, the first mesa exhibiting a total extension of less than 100 nm in a lateral direction, and a second mesa in a second cell portion including: a second port region, and a second channel region. A trench structure includes a control electrode structure configured to control the load current by inversion or accumulation. A guidance zone of the second conductivity type is below the second channel region and is displaced from the first and the second channel regions.

Abstract: A semiconductor device includes a transistor. The transistor includes a drift region of a first conductivity type in a semiconductor substrate having a first main surface, a body region of a second conductivity type between the drift region and the first main surface, and a plurality of trenches in the first main surface and patterning the semiconductor substrate into a plurality of mesas including a first mesa and a dummy mesa. The plurality of trenches includes at least one active trench. The first mesa is arranged at a first side of the active trench, and the dummy mesa is arranged at a second side of the active trench. A gate electrode is arranged in the active trench, and a source region of the first conductivity type is in the first mesa. A one-sided channel of the transistor is configured to be formed in the first mesa.

Abstract: A power semiconductor device includes an active cell region with a drift region of a first conductivity type, a plurality of IGBT cells arranged within the active cell region, each of the IGBT cells includes at least one trench that extends into the drift, an edge termination region surrounding the active cell region, a transition region arranged between the active cell region and the edge termination region, at least some of the IGBT cells are arranged within or extend into the transition region, a barrier region of a second conductivity type, the barrier region is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells and does not extend into the transition region, and a first load terminal and a second load terminal, the power semiconductor device is configured to conduct a load current along a vertical direction between.

Abstract: A power semiconductor device has a semiconductor body coupled to first and second load terminal structures, the semiconductor body configured to conduct a load current during a conducting state of the device and having a drift region. The power semiconductor device includes a plurality of cells, each cell having: a first mesa in a first cell portion, the first mesa including: a first port region, and a first channel region, the first mesa exhibiting a total extension of less than 100 nm in a lateral direction, and a second mesa in a second cell portion including: a second port region, and a second channel region. A trench structure includes a control electrode structure configured to control the load current by inversion or accumulation. A guidance zone of the second conductivity type is below the second channel region and is displaced from the first and the second channel regions.

Abstract: A power semiconductor device includes an active cell region with a drift region, and IGBT cells at least partially arranged within the active cell region. Each IGBT cell includes at least one trench extending into the drift region along a vertical direction, an edge termination region surrounding the active cell region, and a transition region arranged between the active cell region and the edge termination region. The transition region has a width along a lateral direction from the active cell region towards the edge termination region. At least some of the IGBT cells are arranged within, or, respectively, extend into the transition region. An electrically floating barrier region of each IGBT cell is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells. The electrically floating barrier region does not extend into the transition region.

Abstract: The present invention relates i.a. to a recombinant avian coronavirus spike protein or fragment thereof comprising a mutation at amino acid position 267 to Cysteine. Further, the present invention relates to an immunogenic composition comprising an avian coronavirus with such spike protein.

Abstract: A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.

Abstract: A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.

Abstract: A power semiconductor transistor includes: a semiconductor body coupled to a load terminal; a drift region in the semiconductor body and having dopants of a first conductivity type; a first trench extending into the semiconductor body along a vertical direction and including a control electrode electrically insulated from the semiconductor body by an insulator; a second trench extending into the semiconductor body along the vertical direction; a mesa region arranged between the trenches and including a source region electrically connected to the load terminal and a channel region separating the source and drift regions; and a portion of a contiguous plateau region of a second conductivity type arranged in the semiconductor drift region and extending below the trenches and below the channel and source regions, the contiguous plateau region having a plurality of openings aligned below the channel region in a widthwise direction of the channel region.

Abstract: A power semiconductor device includes a semiconductor body having front and back sides. The semiconductor body includes drift, field stop and emitter adjustment regions each of a first conductivity type. The field stop region is arranged between the drift region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the drift region. The emitter adjustment region is arranged between the field stop region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the field stop region. The semiconductor body has a concentration of interstitial oxygen of at least 1E17 cm?3. The field stop region includes a region where the dopant concentration is higher than that in the drift region at least by a factor of three. At least 20% of the dopants of the first conductivity type in the region are oxygen-induced thermal donors.

Abstract: The abutment of a drum brake is formed from a solid material which deforms under load, wherein measurement devices are provided which detect this deformation. The abutment has two limbs, on which the brake shoes are supported. The changing distance between the two brake shoes under load is determined by detecting the distance between extension rods on the limbs by a measurement device comprising magnets and Hall sensors or AMR sensors.

Abstract: A method for ascertaining an operating variable of a drum brake, the method using forces acting on supporting bearings. The invention further relates to an associated drum brake assembly, an associated analysis unit and an associated storage medium.

Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, and first and second cells each configured for controlling a load current and electrically connected to the first load terminal structure and to a drift region. A first mesa in the first cell includes a port region electrically connected to the first load terminal structure, and a first channel region coupled to the drift region. A second mesa included in the second cell includes a port region electrically connected to the first load terminal structure, and a second channel region coupled to the drift region. The mesas are spatially confined in a direction perpendicular to a direction of the load current by an insulation structure, and have a total extension of less than 100 nm in that direction. The first channel region includes an inversion channel. The second channel region includes an accumulation channel.

Abstract: A power semiconductor switch includes a cross-trench structure associated with at least one IGBT cell. The cross-trench structure merge at least one control trench, at least one dummy trench and at least one further trench of at least one IGBT cell to each other. The cross-trench structure overlaps at least partially along a vertical direction with trenches of the at least one IGBT-cell.

Abstract: A power semiconductor transistor includes: a semiconductor body coupled to a load terminal; a drift region in the semiconductor body and having dopants of a first conductivity type; a first trench extending into the semiconductor body along a vertical direction and including a control electrode electrically insulated from the semiconductor body by an insulator; a second trench extending into the semiconductor body along the vertical direction; a mesa region arranged between the trenches and including a source region electrically connected to the load terminal and a channel region separating the source and drift regions; and a portion of a contiguous plateau region of a second conductivity type arranged in the semiconductor drift region and extending below the trenches and below the channel and source regions, the contiguous plateau region having a plurality of openings aligned below the channel region in a widthwise direction of the channel region.

Abstract: A power semiconductor device having an IGBT-configuration includes at least one power cell. Each power cell includes at least three trenches arranged laterally adjacent to each other. Each trench extends into a semiconductor body along a vertical direction and includes an insulator that insulates a respective electrode from the semiconductor body. The at least three trenches include at least one control trench whose electrode is electrically coupled to a control terminal, and a source trench whose electrode is electrically coupled to a first load terminal. An active mesa for conduction of at least a part of the load current is laterally confined at least by one of the at least one control trench and includes at least a respective section of each of a source region and a channel region. An auxiliary mesa is laterally confined by the source trench and one of the at least one control trench.

Abstract: The present invention relates i.a. to a 4/91 IBV (infectious bronchitis virus) encoding for a heterologous S (spike) protein or fragment thereof. Further, the present invention relates to an immunogenic composition comprising said 4/91 IBV encoding for a heterologous S (spike) protein or fragment thereof. Furthermore, the present invention relates to methods for immunizing a subject comprising administering to such subject the immunogenic composition of the present invention. Moreover, the present invention relates to methods of treating or preventing clinical signs caused by IBV in a subject of need, the method comprising administering to the subject a therapeutically effective amount of an immunogenic composition according to the present invention.