Abstract: An IGBT includes a drift region of a first conductivity type, a plurality of trenches laterally confining both first type mesas having a respective source region and a respective body region and second type mesas. A shield region does for example not laterally overlap with the second type mesa, but only with the first type mesa.

Abstract: A semiconductor device is proposed. The semiconductor device includes an IGBT in an IGBT portion of a semiconductor body and a diode in a diode portion of the semiconductor body. The diode includes an anode region of a first conductivity type and confined by diode trenches along a first lateral direction. Each of the diode trenches includes a diode trench electrode and a diode trench dielectric. A first contact groove extends into the anode region along a vertical direction from the first surface of the semiconductor body. An anode contact region of the first conductivity type adjoins a bottom side of the first contact groove. A cathode contact region of a second conductivity type adjoins a second surface of the semiconductor body opposite to the first surface. Methods of manufacturing the semiconductor device are also proposed.

Abstract: The present invention relates i.a. to a 4/91 IBV (infectious bronchitis virus) encoding for a heterologous S (spike) protein or fragment thereof. Further, the present invention relates to an immunogenic composition comprising said 4/91 IBV encoding for a heterologous S (spike) protein or fragment thereof. Furthermore, the present invention relates to methods for immunizing a subject comprising administering to such subject the immunogenic composition of the present invention. Moreover, the present invention relates to methods of treating or preventing clinical signs caused by IBV in a subject of need, the method comprising administering to the subject a therapeutically effective amount of an immunogenic composition according to the present invention.

Abstract: An RC IGBT with an n-barrier region in a transition section between a diode section and an IGBT section is presented.

Abstract: According to an embodiment of a power semiconductor device, the device includes: a semiconductor substrate including an IGBT region having an IGBT and a diode region having a diode. The IGBT region includes a plurality of first trenches extending perpendicular to a first main surface of the semiconductor substrate. The diode region includes a plurality of second trenches extending perpendicular to the first main surface of the semiconductor substrate. An average lateral spacing between adjacent ones of the second trenches is greater than an average lateral spacing between adjacent ones of the first trenches. Additional power semiconductor device embodiments are described herein, as are corresponding methods of production.

Abstract: A voltage-controlled switching device includes a drain/drift structure formed in a semiconductor portion with a lateral cross-sectional area AQ, a source/emitter terminal, and an emitter channel region between the drain/drift structure and the source/emitter terminal. A resistive path electrically connects the source/emitter terminal and the emitter channel region. The resistive path has an electrical resistance of at least 0.1 m?*cm2/AQ.

Abstract: A power semiconductor transistor includes: a semiconductor body coupled to a load terminal; a drift region in the semiconductor body and having dopants of a first conductivity type; a first trench extending into the semiconductor body along a vertical direction and including a control electrode electrically insulated from the semiconductor body by an insulator; a second trench extending into the semiconductor body along the vertical direction; a mesa region arranged between the trenches and including a source region electrically connected to the load terminal and a channel region separating the source and drift regions; and a portion of a contiguous plateau region of a second conductivity type arranged in the semiconductor drift region and extending below the trenches and below the channel and source regions, the contiguous plateau region having a plurality of openings aligned below the channel region in a widthwise direction of the channel region.

Abstract: A power semiconductor device includes a semiconductor body having front and back sides. The semiconductor body includes drift, field stop and emitter adjustment regions each of a first conductivity type. The field stop region is arranged between the drift region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the drift region. The emitter adjustment region is arranged between the field stop region and the backside and has dopants of the first conductivity type at a higher dopant concentration than the field stop region. The semiconductor body has a concentration of interstitial oxygen of at least 1E17 cm?3. The field stop region includes a region where the dopant concentration is higher than that in the drift region at least by a factor of three. At least 20% of the dopants of the first conductivity type in the region are oxygen-induced thermal donors.

Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, an active cell field in the body, and a plurality of first and second cells in the active cell field. Each cell is electrically connected to the first load terminal structure and to a drift region. Each first cell includes a mesa having a port region electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each second cell includes a mesa having a port region of the opposite conductivity type electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each mesa is spatially confined in a direction perpendicular to a direction of the load current within the respective mesa, by an insulation structure and has a total extension of less than 100 nm in the direction.

Abstract: A semiconductor device is proposed. The semiconductor device includes a plurality of trenches extending into in a semiconductor body from a first main surface. A first group of the plurality of trenches includes a gate electrode. A second group of the plurality of trenches includes a source electrode. A third group of the plurality of trenches includes an auxiliary electrode. The source electrode is electrically coupled to a source contact area via a source wiring line and the auxiliary electrode. The source wiring line and the auxiliary electrode are electrically connected in series between the source contact area and the source electrode.

Abstract: A diode is proposed. The diode includes a semiconductor body having a first main surface and a second main surface opposite to the first main surface. The diode further includes an anode region and a cathode region. The anode region is arranged between the first main surface and the cathode region. An anode pad area is electrically connected to the anode region. The diode further includes a plurality of trenches extending into the semiconductor body from the first main surface. A first group of the plurality of trenches includes a first trench electrode. A second group of the plurality of trenches includes a second trench electrode. The first trench electrode is electrically coupled to the anode pad area via an anode wiring line and the second trench electrode.

Abstract: The present invention relates i.a. to a 4/91 IBV (infectious bronchitis virus) encoding for a heterologous S (spike) protein or fragment thereof. Further, the present invention relates to an immunogenic composition comprising said 4/91 IBV encoding for a heterologous S (spike) protein or fragment thereof. Furthermore, the present invention relates to methods for immunizing a subject comprising administering to such subject the immunogenic composition of the present invention. Moreover, the present invention relates to methods of treating or preventing clinical signs caused by IBV in a subject of need, the method comprising administering to the subject a therapeutically effective amount of an immunogenic composition according to the present invention.

Abstract: A vertical power semiconductor device includes a semiconductor body having opposing first and second main surfaces. At least part of a gate trench structure formed at the first main surface extends along a first lateral direction. Body and source regions directly adjoin the gate trench structure. A drift region is arranged between the body region and second main surface. A body contact structure includes first and second body contact sub-regions spaced at a first lateral distance along the first lateral direction. Each body contact sub-region directly adjoins the gate trench structure and has a larger doping concentration than the body region. In a channel region between the body contact sub-regions, the body contact structure has a second lateral distance to the gate trench structure along a second lateral direction perpendicular to the first lateral direction. The first lateral distance is equal to or less than twice the second lateral distance.

Abstract: A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, an active cell field in the body, and a plurality of first and second cells in the active cell field. Each cell is electrically connected to the first load terminal structure and to a drift region. Each first cell includes a mesa having a port region electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each second cell includes a mesa having a port region of the opposite conductivity type electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each mesa is spatially confined in a direction perpendicular to a direction of the load current within the respective mesa, by an insulation structure and has a total extension of less than 100 nm in the direction.

Abstract: According to an embodiment of a power semiconductor device, the device includes: a semiconductor substrate including an IGBT region having an IGBT and a diode region having a diode. The IGBT region includes a plurality of first trenches extending perpendicular to a first main surface of the semiconductor substrate. The diode region includes a plurality of second trenches extending perpendicular to the first main surface of the semiconductor substrate. An average lateral spacing between adjacent ones of the second trenches is greater than an average lateral spacing between adjacent ones of the first trenches. Additional power semiconductor device embodiments are described herein, as are corresponding methods of production.

Abstract: An RC IGBT includes, in an active region, an IGBT section and at least three diode sections. The arrangement of the diode sections obeys a design rule.

Abstract: A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.

Abstract: A semiconductor device is proposed. The semiconductor device includes an IGBT in an IGBT portion of a semiconductor body and a diode in a diode portion of the semiconductor body. The diode includes an anode region of a first conductivity type and confined by diode trenches along a first lateral direction. Each of the diode trenches includes a diode trench electrode and a diode trench dielectric. A first contact groove extends into the anode region along a vertical direction from the first surface of the semiconductor body. An anode contact region of the first conductivity type adjoins a bottom side of the first contact groove. A cathode contact region of a second conductivity type adjoins a second surface of the semiconductor body opposite to the first surface. Methods of manufacturing the semiconductor device are also proposed.

Abstract: A power semiconductor switch includes a cross-trench structure associated with at least one IGBT cell. The cross-trench structure merge at least one control trench, at least one dummy trench and at least one further trench of at least one IGBT cell to each other. The cross-trench structure overlaps at least partially along a vertical direction with trenches of the at least one IGBT-cell.

Abstract: An embodiment relates to a method of manufacturing an insulated gate bipolar transistor in a semiconductor body. A first field stop zone portion of a first conductivity type is formed on a semiconductor substrate. A second field stop zone portion of the first conductivity type is formed on the first field stop zone portion. A drift zone of the first conductivity type is formed on the second field stop zone portion. A doping concentration in the drift zone is smaller than 1013 cm?3 along a vertical extension of more than 30% of a thickness of the semiconductor body upon completion of the insulated gate bipolar transistor.