Abstract: Antibodies which bind human CEACAM5 protein, as well as isolated nucleic acids and host cells containing a sequence encoding said antibodies are disclosed. Immunoconjugates containing said antibodies linked to a growth-inhibitory agent, and pharmaceutical compositions containing antibodies or said immunoconjugates are also disclosed. A use of the antibodies, immunoconjugates, and pharmaceutical compositions disclosed herein is provided for the treatment of cancer or for diagnostic purposes.

Abstract: An X-ray detector includes a stack arrangement with a scattered radiation grid and a planar converter element including a first surface and a second surface. The converter element includes a first electrode embodied on the first surface and a pixelated second electrode with two adjacent first electrode elements. The two adjacent first electrode elements include a first width and a first length and the two adjacent first electrode elements are embodied the second surface opposite the first surface. The scattered radiation grid includes a grid wall with a thickness along the boundary between the two adjacent first electrode elements. The grid wall is arranged to be substantially perpendicular on the first surface and, in a projection, substantially parallel to the direction of incidence of the radiation and to the surface normal of the first surface. The grid wall at least partially overlaps the two adjacent first electrode elements.

Abstract: A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

Abstract: A method is disclosed for detecting x-rays using an x-ray detector which includes a direct-conversion semiconductor detector element. Additional radiation is supplied to the semiconductor detector element using a radiation source, and the supply of the additional radiation is controlled and/or regulated on the basis of a specified target value. In at least one embodiment, the target value can be specified in a variable manner over time as a sequence of target values. An x-ray detector system is further disclosed, with which the method can be carried out.

Abstract: An X-ray detector is disclosed, in particular for a computed tomography system. In an embodiment, the X-ray detector includes a regular arrangement of measuring pixels for covering a measuring surface. A plurality of the measuring pixels of the regular arrangement are constructed as direct converting measuring pixels, and remaining ones of the measuring pixels are constructed as indirect converting measuring pixels.

Abstract: A direct conversion X-ray detector for the detection of X-rays includes at least a semiconductor used for detecting X-rays, which has areas that are shaded against X-rays and unshaded areas, a pixelated electrode attached to the semiconductor and an all-over electrode attached to the semiconductor opposite the pixelated electrode, and at least one light source to illuminate the all-over electrode with additional light radiation for the purpose of generating additional charge carriers. In an embodiment, the at least one light source is designed such that the shaded areas are irradiated with a different intensity of the additional light radiation than are the unshaded areas. A CT system including the direct conversion X-ray detector is also disclosed, together with a method for the detection of incident X-rays via direct conversion X-ray detector, wherein the shaded areas are irradiated with a different intensity of the additional light radiation than the unshaded areas.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.

Abstract: A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the purpose of radiation detection, a semiconductor layer with an upper side and a lower side is present, the semiconductor layer on one of the sides including an electrode embodied so as to extend across a number of detector elements and electrodes subdivided into individual electrodes being arranged on the other side of the semiconductor layer so that by applying voltage between the electrodes of the two sides, an electrical field is generatable and each individual electrode is assigned an effective volume so as to collect charge in the semiconductor layer. In an embodiment, the individual electrodes are alternately connected to at least two different voltage potentials. Furthermore, a medical diagnostic system is disclosed, including at least one such radiation detector.

Abstract: A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the purpose of radiation detection, a semiconductor layer with an upper side and a lower side is present, the semiconductor layer on one of the sides including an electrode embodied so as to extend across a number of detector elements and electrodes subdivided into individual electrodes being arranged on the other side of the semiconductor layer so that by applying voltage between the electrodes of the two sides, an electrical field is generatable and each individual electrode is assigned an effective volume so as to collect charge in the semiconductor layer. In an embodiment, the individual electrodes are alternately connected to at least two different voltage potentials. Furthermore, a medical diagnostic system is disclosed, including at least one such radiation detector.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, at least including a semiconductor used to detect x-ray radiation and at least one electrode attached to the semiconductor. In an embodiment, the semiconductor and the at least one electrode are electrically conductively connected and the at least one electrode is designed to be transparent and electrically conductive. A CT system is further disclosed, at least including the direct-converting x-ray radiation detector.

Abstract: A direct-conversion x-ray detector or x-ray detector module includes: a direct converter; at least one collimator; and at least one radiation source. The at least one collimator is arranged in a direction of radiation of the x-ray radiation in front of the direct converter, and to restrict direct irradiation of the direct converter by the x-ray radiation. The at least one radiation source is at a side of the direct converter, and configured to irradiate the direct converter with additional radiation. The at least one collimator includes: at least one reflection layer on a side facing the direct converter, and configured to reflect the additional radiation onto the direct converter; and a cooling facility configured to cool the at least one radiation source.

Abstract: A method and a detector system are disclosed for the photon-counting detection of x-ray radiation with direct conversion detectors. In at least one embodiment of the method, as a function of the existing radiation energy, current and/or voltage pulses which are largely proportional thereto are generated, and the generated current and voltage pulses are counted in the detector when a predetermined current and/or voltage source is exceeded, whereby a threshold is used as a predetermined current and/or voltage threshold, which corresponds to a detection of a photon with an energy which is less than the k-edge of the detector material used.

Abstract: An X-ray detector is disclosed. According to an embodiment of the invention, the X-ray detector includes at least two adjacently arranged detector elements, to each of which a high voltage is applied in order to detect incident X-rays. In this case, two adjacent detector elements are coupled to one another by way of a protection circuit, designed to limit a voltage difference between the two adjacent detector elements to a voltage value which is non-critical with regard to the formation of a flashover between the two detector elements.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, at least including a semiconductor used to detect x-ray radiation and at least one electrode attached to the semiconductor. In an embodiment, the semiconductor and the at least one electrode are electrically conductively connected and the at least one electrode is designed to be transparent and electrically conductive. A CT system is further disclosed, at least including the direct-converting x-ray radiation detector.

Abstract: A method is disclosed for the temperature stabilization of a direct-converting X-ray detector, including a detector surface having a semiconductor and being divided into a plurality of partial detector surfaces. During the irradiation of the detector surface, heat is generated in the semiconductor by electric power. Electric power generated in the semiconductor is kept constant for each partial detector surface at least during a heterogeneous and/or temporally variable irradiation of the detector surface by feeding-in power-adjusted additional radiation for each partial detector surface. A direct-converting X-ray detector is disclosed for the detection of X-rays. At least one control loop with at least one reference variable is embodied for the energy regulation of the additional radiation, which keeps the temperature in the semiconductor constant for each partial detector surface by keeping the electric power in the semiconductor constant by changing the energy of the additional radiation.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.

Abstract: A direct conversion X-ray detector for the detection of X-rays includes at least a semiconductor used for detecting X-rays, which has areas that are shaded against X-rays and unshaded areas, a pixelated electrode attached to the semiconductor and an all-over electrode attached to the semiconductor opposite the pixelated electrode, and at least one light source to illuminate the all-over electrode with additional light radiation for the purpose of generating additional charge carriers. In an embodiment, the at least one light source is designed such that the shaded areas are irradiated with a different intensity of the additional light radiation than are the unshaded areas. A CT system including the direct conversion X-ray detector is also disclosed, together with a method for the detection of incident X-rays via direct conversion X-ray detector, wherein the shaded areas are irradiated with a different intensity of the additional light radiation than the unshaded areas.

Abstract: A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.

Abstract: A method is disclosed for detecting x-rays using an x-ray detector which includes a direct-conversion semiconductor detector element. Additional radiation is supplied to the semiconductor detector element using a radiation source, and the supply of the additional radiation is controlled and/or regulated on the basis of a specified target value. In at least one embodiment, the target value can be specified in a variable manner over time as a sequence of target values. An x-ray detector system is further disclosed, with which the method can be carried out.

Abstract: A circuit arrangement is disclosed for a detector. In at least one embodiment, the circuit arrangement includes a directly-converting semi-conductor material and pulse-shaper in the signal readout electronics assembly. A method is disclosed for a readout of count impulses generated in the semi-conductor material, wherein part of the pulse-shaper is equipped with a relatively longer shaping time constant and a different part of the pulse-shaper is equipped with a relatively shorter shaping time constant.