Abstract: An X-ray detector is disclosed. According to an embodiment of the invention, the X-ray detector includes at least two adjacently arranged detector elements, to each of which a high voltage is applied in order to detect incident X-rays. In this case, two adjacent detector elements are coupled to one another by way of a protection circuit, designed to limit a voltage difference between the two adjacent detector elements to a voltage value which is non-critical with regard to the formation of a flashover between the two detector elements.

Abstract: A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

Abstract: An X-ray detector is disclosed, in particular for a computed tomography system. In an embodiment, the X-ray detector includes a regular arrangement of measuring pixels for covering a measuring surface. A plurality of the measuring pixels of the regular arrangement are constructed as direct converting measuring pixels, and remaining ones of the measuring pixels are constructed as indirect converting measuring pixels.

Abstract: A radiation converter includes a directly converting semiconductor layer having grains whose interfaces predominantly run parallel to a drift direction—constrained by an electric field—of electrons liberated in the semiconductor layer. Charge carriers liberated by incident radiation quanta are accelerated in the electric field in the direction of the radiation incidence direction and on account of the columnar or pillar-like texture of the semiconductor layer, in comparison with the known radiation detectors, cross significantly fewer interfaces of the grains that are occupied by defect sites. This increases the charge carrier lifetime/mobility product in the direction of charge carrier transport. Consequently, it is possible to realize significantly thicker semiconductor layers for the counting and/or energy-selective detection of radiation quanta. This increases the absorptivity of the radiation converter which in turn makes it possible to reduce a radiation dose applied to the patient.

Abstract: An of the invention relates to a direct-conversion x-ray detector for detection of x-ray radiation, including a direct converter used for detection of the x-ray radiation, at least one collimator disposed at least partly in the direction of radiation of the x-ray radiation in front of the direct converter and a least one radiation source which is disposed to the side of the direct converter and irradiates the direct converter indirectly with an additional radiation. In at least one embodiment, the a least one collimator, on a side facing towards the direct converter, includes at least one reflection layer, on which the additional radiation is reflected onto the direct converter, and includes a cooling facility through which the at least one radiation source is able to be cooled.

Abstract: A semiconductor element includes a CdTe-based semiconductor material and a number of connection points of the semiconductor element to connect to electronic components. In at least one embodiment, the connection points are provided with a special solder resist layer including a mixture AB of at least two metals with different coefficients of expansion. In at least one embodiment, a radiation detector includes such a semiconductor element and optionally includes evaluation electronics for reading out a detector signal. In at least one embodiment, a medical technology device includes such a radiation detector. Furthermore, a method is disclosed for creating a semiconductor element which includes applying a solder resist layer to connection points. In at least one embodiment, the solder resist layer includes a mixture of at least two metals with different coefficients of expansion.

Abstract: A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 ?·cm and 2·109 ?·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.

Abstract: In a method, with a current measurement, the history of the radiation exposure of the X-ray detector is taken into account with respect to the overall X-ray detector or subareas of the X-ray detector, in respect of a reduction in the measurement sensitivity produced as a result and a recovery of the reduction in the measurement sensitivity, and the determined measuring signal is corrected with a correction factor which is dependent on the history of the radiation exposure. Furthermore, an X-ray recording system includes a detector which includes a plurality of detector elements, which are read out in groups channel by channel and a read-out apparatus with computer-assisted device for correcting read-out detector data prior to a further processing of the detector data to form projective or tomographic images.

Abstract: A radiation detector is disclosed, including a plurality of detector elements arranged adjacent to one another in a planar manner. In an embodiment, for the purpose of radiation detection, a semiconductor layer with an upper side and a lower side is present, the semiconductor layer on one of the sides including an electrode embodied so as to extend across a number of detector elements and electrodes subdivided into individual electrodes being arranged on the other side of the semiconductor layer so that by applying voltage between the electrodes of the two sides, an electrical field is generatable and each individual electrode is assigned an effective volume so as to collect charge in the semiconductor layer. In an embodiment, the individual electrodes are alternately connected to at least two different voltage potentials. Furthermore, a medical diagnostic system is disclosed, including at least one such radiation detector.

Abstract: A method is disclosed for the temperature stabilization of a direct-converting X-ray detector, including a detector surface having a semiconductor and being divided into a plurality of partial detector surfaces. During the irradiation of the detector surface, heat is generated in the semiconductor by electric power. Electric power generated in the semiconductor is kept constant for each partial detector surface at least during a heterogeneous and/or temporally variable irradiation of the detector surface by feeding-in power-adjusted additional radiation for each partial detector surface. A direct-converting X-ray detector is disclosed for the detection of X-rays. At least one control loop with at least one reference variable is embodied for the energy regulation of the additional radiation, which keeps the temperature in the semiconductor constant for each partial detector surface by keeping the electric power in the semiconductor constant by changing the energy of the additional radiation.

Abstract: A detector element is disclosed, including a semiconducting converter element and a number of pixilated contacts arranged thereon. A radiation detector is also disclosed including such a detector element, along with a medical device having one or more such radiation detectors. Finally, a method for producing a detector element is disclosed, which includes forming pixelated contacts by way of a photolithographic process on the semiconducting converter element using a lithographic mask arranged on a converter element protective layer.

Abstract: An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal.

Abstract: At least one embodiment of the invention relates to an X-ray radiation detector, in particular for use in a CT system. In at least one embodiment, the X-ray radiation detector includes a semiconductor material used for detection, at least two ohmic contacts between the semiconductor material and a contact material, the semiconductor material and contact material each having a specific excitation energy of the charge carriers, with the excitation energy of the contact material corresponding to the excitation energy of the semiconductor material. At least one embodiment of the invention furthermore relates to a CT system in which an X-ray radiation detector is used, the X-ray radiation detector advantageously having at least two ideal ohmic contacts according to at least one embodiment of the invention.

Abstract: A method is disclosed for detecting X-ray radiation from an X-ray emitter. In at least one embodiment of the method, an electric pulse with a pulse amplitude characteristic of the energy of a quantum is generated when a quantum of the X-ray radiation impinges on a sensor, wherein a number of threshold energies are predetermined. When the pulse amplitude corresponding to the respective energy is exceeded, a signal is emitted each time the pulse amplitude corresponding to a respective threshold energy is exceeded. At least one embodiment of the method permits reliable and high-quality imaging, even in image regions with high X-ray quanta rates. To this end, at least one of the threshold energies is predetermined such that it is higher than the maximum energy of the X-ray spectrum emitted by the X-ray emitter.

Abstract: An X-ray detector includes a directly converting semiconductor layer for converting an incident radiation into electrical signals with a band gap energy characteristic of the semiconductor layer, and at least one light source for coupling light into the semiconductor layer, wherein the generated light, for the simulation of incident X-ray quanta, has an energy above the band gap energy of the semiconductor layer. One embodiment includes at least one evaluation unit for calculating an evaluation signal from the electrical signals generated when the light is coupled into the semiconductor layer, and at least one calibration unit for calibrating at least one pulse discriminator on the basis of the evaluation signal. This provides the prerequisites for a rapidly repeatable calibration of the X-ray detector taking into account of the present polarization state without using X-ray radiation. Another embodiment additionally relates to a calibration method for such an X-ray detector.

Abstract: In a method, with a current measurement, the history of the radiation exposure of the X-ray detector is taken into account with respect to the overall X-ray detector or subareas of the X-ray detector, in respect of a reduction in the measurement sensitivity produced as a result and a recovery of the reduction in the measurement sensitivity, and the determined measuring signal is corrected with a correction factor which is dependent on the history of the radiation exposure. Furthermore, an X-ray recording system includes a detector which includes a plurality of detector elements, which are read out in groups channel by channel and a read-out apparatus with computer-assisted device for correcting read-out detector data prior to a further processing of the detector data to form projective or tomographic images.

Abstract: A method and a detector system are disclosed for the photon-counting detection of x-ray radiation with direct conversion detectors. In at least one embodiment of the method, as a function of the existing radiation energy, current and/or voltage pulses which are largely proportional thereto are generated, and the generated current and voltage pulses are counted in the detector when a predetermined current and/or voltage source is exceeded, whereby a threshold is used as a predetermined current and/or voltage threshold, which corresponds to a detection of a photon with an energy which is less than the k-edge of the detector material used.

Abstract: A circuit arrangement is disclosed for a detector. In at least one embodiment, the circuit arrangement includes a directly-converting semi-conductor material and pulse-shaper in the signal readout electronics assembly. A method is disclosed for a readout of count impulses generated in the semi-conductor material, wherein part of the pulse-shaper is equipped with a relatively longer shaping time constant and a different part of the pulse-shaper is equipped with a relatively shorter shaping time constant.

Abstract: A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.

Abstract: A radiation converter includes a directly converting semiconductor layer, wherein the semiconductor layer includes grains whose interfaces at least predominantly run parallel to a drift direction—constrained by an electric field—of electrons liberated in the semiconductor layer. in at least one embodiment, the charge carriers liberated by incident radiation quanta are accelerated in the electric field in the direction of the radiation incidence direction and on account of the columnar or pillar-like texture of the semiconductor layer, in comparison with the known radiation detectors, cross significantly fewer interfaces of the grains that are occupied by defect sites. This increases the charge carrier lifetime/mobility product in the direction of charge carrier transport. Consequently, it is possible to realize significantly thicker semiconductor layers for the counting and/or energy-selective detection of radiation quanta.