Abstract: A PEF cooking appliance includes a PEF generator, and a carrier configured to receive a storage container for food. The carrier includes at least two PEF electrodes spaced apart to enable insertion of the storage container there between. At least one the PEF electrodes is connected to the PEF generator. The carrier is embodied as a drawer with a top cover pivotably attached thereto The drawer includes a base, with one of the two PEF electrodes being integrated into the base of the drawer and another one of the two PEF electrodes being integrated into the cover of the drawer.

Abstract: A power semiconductor module includes: an electrically insulative frame; half bridge circuits housed in the electrically insulative frame, each half bridge circuit including one or more high-side power semiconductor dies and one or more low-side power semiconductor dies; a first structured metal frame embedded in the electrically insulative frame and electrically connected to a drain or collector terminal of the one or more high-side power semiconductor dies of each half bridge circuit; a second structured metal frame embedded in the electrically insulative frame and electrically connected to a source or emitter terminal of the one or more low-side power semiconductor dies of each half bridge circuit; and first openings in the electrically insulative frame that expose part of the first structured metal frame or part of the second structured metal frame at opposing first and second sidewalls of the electrically insulative frame and between adjacent ones of the half bridge circuits.

Abstract: A power electronic assembly includes: a power semiconductor module; a metal base plate attached to a first mounting side of the power semiconductor module at a plurality of first fixing positions; and a circuit board attached to a second mounting side of the power semiconductor module opposite the first mounting side at a plurality of second fixing positions. A plurality of electrically insulative protrusions jut out from the second mounting side of the power semiconductor module. The plurality of electrically insulative protrusions is vertically aligned with the plurality of first fixing positions. Methods of producing the power electronic assembly are also described.

Abstract: A power semiconductor module includes: an electrically insulative frame having opposite first and second mounting sides, and a border that defines a periphery of the electrically insulative frame; a first substrate seated in the electrically insulative frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a plurality of busbars attached to the first substrate and extending through the border of the electrically insulative frame; a plurality of fixing positions at the first mounting side of the electrically insulative frame; and a plurality of electrically insulative protrusions jutting out from the second mounting side of the electrically insulative frame, wherein the protrusions are vertically aligned with the fixing positions.

Abstract: Provided is a filling for a food product including a viscous, essentially anhydrous fat cream and at least one hydrophilic additive embedded in the fat cream, wherein the fat cream includes at least one outer region adjacent to an outer surface of the fat cream, at least one inner region, and at least one transition region disposed between the outer region and the inner region, wherein a mass fraction C of the hydrophilic additive increases continuously along a gradient G from the inner region through the transition region to the outer region.

Abstract: A power semiconductor module includes: an electrically insulative frame having opposite first and second mounting sides, and a border that defines a periphery of the electrically insulative frame; a first substrate seated in the electrically insulative frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a plurality of busbars attached to the first substrate and extending through the border of the electrically insulative frame; a plurality of fixing positions at the first mounting side of the electrically insulative frame; and a plurality of electrically insulative protrusions jutting out from the second mounting side of the electrically insulative frame, wherein the protrusions are vertically aligned with the fixing positions.

Abstract: A power semiconductor module includes: an electrically insulative frame having opposite mounting sides and a border wall that defines a periphery of the frame; a substrate seated in the frame; power semiconductor dies attached to the substrate; signal pins attached to the substrate and electrically connected to the power semiconductor dies; a busbar attached to the substrate and extending through the border wall; a receptacle in the border wall configured to receive a current sensor module and that exposes part of the busbar, the exposed part of the busbar having an opening; and a rotation bar jutting out from a sidewall of the receptacle and onto the exposed part of the busbar without obstructing the opening in the busbar, wherein the rotation bar forms an axis of rotation within the receptacle. A power electronic assembly that incorporates the power semiconductor module and corresponding method of production are also described.

Abstract: A power electronic system includes a power semiconductor module, including: a baseplate having a first side, an opposite second side, and an edge connecting the first and second sides; and a power semiconductor die arranged at the first side of the baseplate; and a cooler having an opening. The edge of the baseplate is in direct contact with an edge of the opening such that a fluid channel provided by the cooler is sealed at the opening by the baseplate and the second side of the baseplate forms a wall of the fluid channel. An interface between the baseplate and the cooler at the opening is free of any welded joint.

Abstract: An external contact element for a power semiconductor module includes a bonded blank strip, the bonded blank strip being formed such that the external contact element includes: a first contact portion configured to be coupled to the power semiconductor module by a first solder joint, a second contact portion spaced from the first contact portion in a thickness direction out of the plane of the first contact portion, the second contact portion being configured to be coupled to an external appliance, and a spring portion connecting the first and second contact portions to each other and configured to compensate a movement along the thickness direction. The bonded blank strip includes a first sheet of a first metal or first metal alloy and a second sheet of a different second metal or second metal alloy. The second sheet is omitted from at least a substantial part of the first contact portion.

Abstract: Data transformer apparatus comprising a dispatcher module, a reader module, a converter module and a writer module; the dispatcher module is configured to receive a data transformation request including a first and a second information items; the reader module is configured to retrieve data to be transformed, according to said first information item; obtain the type attribute of the data to be transformed, based on said first information item; send the data to be transformed and the type attribute to the converter module; the converter module is configured to select transformation instructions based on said type attribute; execute, on the data to be transformed, the selected transformation instructions, thereby obtaining transformed data; send the transformed data to the writer module; the writer module is configured to; write the transformed data in an output buffer according to said second information item.

Abstract: A strain relief device for at least one supply line. The strain relief device can be or is disposed on a line-guiding apparatus for guiding the at least one supply line and has at least one main body, which comprises at least one coupling means for the fastening of the at least one supply line to said coupling means and thus to the strain relief device in such a way that strain is relieved. At least one preferably flexible coupling element is provided, which can be disposed so as to peripherally surround the coupling means and the line to be fixed on the coupling means and which surrounds the line together with the coupling means in the form of a loop. There are fastening means on the main body for fastening the main body to the strain relief device in such a way that tensile force is absorbed. A guide element having a guide region for the coupling element is provided adjacent to the at least one coupling means.

Abstract: A terminal element or bus bar for a power semiconductor module arrangement includes a first end configured to be arranged inside a housing of the power semiconductor module arrangement, a second end configured to be arranged outside of the housing of the power semiconductor module arrangement, and at least a first section and a second section arranged successively between the first end and the second end along a length of the terminal element or bus bar, wherein either the first section includes a first material, the second section includes a second material, and the first material differs from the second material, or the first section has a first thickness, the second section has a second thickness, and the first thickness differs from the second thickness, or both.

Abstract: A semiconductor module includes a semiconductor die, an encapsulation encapsulating the die, and first and second power contacts electrically coupled to the die. The power contacts each include an external part exposed from the encapsulation and an overlapping part. The power contacts are configured to carry respective first and second currents. A current flow of the first current in the external part of the first power contact points into or out of the semiconductor module. A current flow of the second current in the external part of the second power contact points in the opposite direction of the first current flow. The overlapping parts overlap such that the current flows point in the same direction in the overlapping parts. The overlapping parts include overlapping slots configured to accept a current sensor element for measuring a combined current in the overlapping parts.

Abstract: A method of producing a semiconductor module arrangement includes providing a first subassembly having a number N1 of first adjustment openings, a second subassembly having a number N2 of second adjustment openings and a third subassembly having a plurality of adjustment pins which are fixedly connected to one another, the first subassembly, the second subassembly and the third subassembly being independent of one another and not connected to one another. The first subassembly, the second subassembly and the third subassembly are arranged relative to one another in such a way that each of the adjustment pins engages into one of the first adjustment openings and/or into one of the second adjustment openings.

Abstract: A power semiconductor module includes: an electrically insulative frame having opposite mounting sides and a border wall that defines a periphery of the frame; a substrate seated in the frame; power semiconductor dies attached to the substrate; signal pins attached to the substrate and electrically connected to the power semiconductor dies; a busbar attached to the substrate and extending through the border wall; a receptable in the border wall configured to receive a current sensor module and that exposes part of the busbar, the exposed part of the busbar having an opening; and a rotation bar jutting out from a sidewall of the receptable and onto the exposed part of the busbar without obstructing the opening in the busbar, wherein the rotation bar forms an axis of rotation within the receptable. A power electronic assembly that incorporates the power semiconductor module and corresponding method of production are also described.

Abstract: A power semiconductor module includes: an electrically insulative frame having opposite first and second mounting sides, and a border that defines a periphery of the electrically insulative frame; a first substrate seated in the electrically insulative frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a plurality of busbars attached to the first substrate and extending through the border of the electrically insulative frame; a plurality of fixing positions at the first mounting side of the electrically insulative frame; and a plurality of electrically insulative protrusions jutting out from the second mounting side of the electrically insulative frame, wherein the protrusions are vertically aligned with the fixing positions.

Abstract: Described is a power semiconductor module that includes: a frame made of an electrically insulative material; a first substrate seated in the frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a busbar extending from the first substrate through a side face of the frame; a current sensor module seated in a receptacle of the frame in sensing proximity of the busbar, the current sensor module including a current sensor attached to a circuit board; and a potting material fixing the current sensor module to the frame such that no air gap is present between the current sensor and the busbar. The potting material contacts the frame and the current sensor. Methods of producing the power semiconductor module are also described.

Abstract: Data transformer apparatus comprising at least a dispatcher module (D), a reader module (R), a converter module (C) and a writer module (W). The dispatcher module (D) is configured to: receive a data transformation request (DTR) including: a first information item (X1) associated to a memory address where data to be transformed (Data1) are stored and to a type attribute (T) of said data to be transformed (Data1); a second information item (X2) indicating a memory address where transformed data (Data2), obtained from said data to be transformed (Data1), have to be written. The reader module (R) is configured to: retrieve the data to be transformed, according to said first information item (X1); obtain the type attribute (T) of the data to be transformed (Data1), based on said first information item (X1); send the data to be transformed (Data1) and the type attribute (T) thereof to the converter module (C).

Abstract: An external contact element for a power semiconductor module includes a bonded blank strip, the bonded blank strip being formed such that the external contact element includes: a first contact portion configured to be coupled to the power semiconductor module by a first solder joint, a second contact portion spaced from the first contact portion in a thickness direction out of the plane of the first contact portion, the second contact portion being configured to be coupled to an external appliance, and a spring portion connecting the first and second contact portions to each other and configured to compensate a movement along the thickness direction. The bonded blank strip includes a first sheet of a first metal or first metal alloy and a second sheet of a different second metal or second metal alloy. The second sheet is omitted from at least a substantial part of the first contact portion.

Abstract: Described is a power semiconductor module that includes: a frame made of an electrically insulative material; a first substrate seated in the frame; a plurality of power semiconductor dies attached to the first substrate; a plurality of signal pins attached to the first substrate and electrically connected to the power semiconductor dies; a busbar extending from the first substrate through a side face of the frame; a current sensor module seated in a receptacle of the frame in sensing proximity of the busbar, the current sensor module including a current sensor attached to a circuit board; and a potting material fixing the current sensor module to the frame such that no air gap is present between the current sensor and the busbar. The potting material contacts the frame and the current sensor. Methods of producing the power semiconductor module are also described.