Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of platinum, aluminum, titanium, bismuth, zinc, and combination thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide, wherein the ruthenium-containing film comprises at least one of a ruthenium-platinum alloy, or a ternary ruthenium oxide. Device structures including a ruthenium-containing film deposited by the methods of the disclosure are also disclosed.

Abstract: A system for combinatorial deposition of a thin layer on a substrate is described. The system comprises at least one deposition material source holder and a substrate holder. The system also comprises a rotatable positioning system for subsequently positioning the at least one substrate in parallel and in non-parallel configuration with at least one deposition material source. The system comprises at least one mask holder arranged for positioning a mask between at least one of the target holder and the positioning system, for allowing variation of the material flux across the at least one substrate when the combinatorial deposition is performed. The mask holder is in a fixed arrangement with respect to the at least one deposition material source holder during the combinatorial depositing.

Abstract: A method is described for providing a hydrophilic effect to a fluoropolymer, e.g. polytetrafluoroethylene (PTFE) material. The method comprises obtaining an at least partly hydrophobic fluoropolymer material, applying a plasma and/or ozone activation step and depositing an inorganic coating using an atomic layer deposition process. Plasma activation step and/or said atomic layer deposition process thereby comprises using process parameters determining a high interaction probability between one or more precursors for the atomic layer deposition process and the fluoropolymer material so as to obtain a coated fluoropolymer material having a contact angle with water below 30°.

Abstract: A method is described for producing nuclear fuel products, including the steps of receiving metallic or intermetallic uranium-based fuel particle cores, providing at least one physical vapour deposited coating layer surrounding the fuel particle core and embedding the nuclear fuel particles in a matrix so as to form a powder mixture of matrix material and coated fuel particles. The at least one physical vapour deposited coating layer may include inhibitors of inhibiting, stabilizing and/or reducing interaction between metallic and intermetallic uranium-based fuel particles cores and the matrix wherein the fuel particles typically may be embedded. The deposited coating layer may include neutron poisons.

Abstract: A system for combinatorial deposition of a thin layer on a substrate is described. The system comprises at least one deposition material source holder and a substrate holder. The system also comprises a rotatable positioning system for subsequently positioning the at least one substrate in parallel and in non-parallel configuration with at least one deposition material source. The system comprises at least one mask holder arranged for positioning a mask between at least one of the target holder and the positioning system, for allowing variation of the material flux across the at least one substrate when the combinatorial deposition is performed. The mask holder is in a fixed arrangement with respect to the at least one deposition material source holder during the combinatorial depositing.

Abstract: A method is described for providing a hydrophilic effect to a fluoropolymer, e.g. polytetrafluoroethylene (PTFE) material. The method comprises obtaining an at least partly hydrophobic fluoropolymer material, applying a plasma and/or ozone activation step and depositing an inorganic coating using an atomic layer deposition process. Plasma activation step and/or said atomic layer deposition process thereby comprises using process parameters determining a high interaction probability between one or more precursors for the atomic layer deposition process and the fluoropolymer material so as to obtain a coated fluoropolymer material having a contact angle with water below 30°.

Abstract: The present invention relates to the use of atomic layer deposition (ALD) techniques to enhance the acid catalytic activity of nanoporous materials.

Abstract: A method is described for producing nuclear fuel products, including the steps of receiving metallic or intermetallic uranium-based fuel particle cores, providing at least one physical vapour deposited coating layer surrounding the fuel particle core and embedding the nuclear fuel particles in a matrix so as to form a powder mixture of matrix material and coated fuel particles. The at least one physical vapour deposited coating layer may include inhibitors of inhibiting, stabilizing and/or reducing interaction between metallic and intermetallic uranium-based fuel particles cores and the matrix wherein the fuel particles typically may be embedded. The deposited coating layer may include neutron poisons.

Abstract: A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step.

Abstract: A system and method are described for providing simultaneously conformal coating of a plurality of three dimensional objects using atomic layer deposition. The system comprises a dielectric tube adapted for maintaining the plurality of objects under vacuum and at least one inlet for providing a gaseous material in the dielectric tube. The dielectric tube used for comprising the objects is mounted rotatable so as to be able to rotate the plurality of objects under vacuum during atomic layer deposition of a coating on the plurality of objects.

Abstract: The present invention relates to the use of atomic layer deposition (ALD) techniques to enhance the acid catalytic activity of nanoporous materials.

Abstract: A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step.

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) including at least one FET that includes a gate electrode including a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

Abstract: A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

Abstract: A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

Abstract: A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step.

Abstract: A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

Abstract: A method for forming gennano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step.