Abstract: The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.

Abstract: A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step.

Abstract: The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.

Abstract: The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.

Abstract: A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

Abstract: A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.

Abstract: A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.

Abstract: A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

Abstract: The present invention provides a method for producing thin nickel (Ni) monosilicide or NiSi films (having a thickness on the order of about 30 nm or less), as contacts in CMOS devices wherein an amorphous Ni alloy silicide layer is formed during annealing which eliminates (i.e., completely by-passing) the formation of metal-rich silicide layers. By eliminating the formation of the metal-rich silicide layers, the resultant NiSi film formed has improved surface roughness as compared to a NiSi film formed from a metal-rich silicide phase. The method of the present invention also forms Ni monosilicide films without experiencing any dependence of the dopant type concentration within the Si-containing substrate that exists with the prior art NiSi films.

Abstract: A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

Abstract: A complementary metal oxide semiconductor (CMOS) device, e.g., a field effect transistor (FET), that includes at least one one-dimensional nanostructure that is typically a carbon-based nanomaterial, as the device channel, and a metal carbide contact that is self-aligned with the gate region of the device is described. The present invention also provides a method of fabricating such a CMOS device.

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

Abstract: A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step.

Abstract: A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.

Abstract: A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.

Abstract: A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.

Abstract: A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.

Abstract: A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

Abstract: A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.