Abstract: The present invention is related to a method of forming a polycrystalline cobalt disilicide or another near noble metal silicide on a silicon substrate. The method comprises the steps of depositing a layer or layers comprising a cobalt-alloy (Ni, Pd, Pt) and a refractory metal on at least a part of said substrate, said part comprising at least a first and a second part, said second part being covered; thereafter heating said silicon substrate in a first heating step and a second heating step and therebetween treating said substrate with at least one chemical solution, said chemical solution selectively etching non-silicidecobalt (or Ni, Pd, Pt) and said refractory metal and cobalt-refractory (or Ni, Pd, Pt-refractory) metal alloys from said substrate except from said first part.