Patents by Inventor Christopher Dennis Bencher
Christopher Dennis Bencher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20080257864Abstract: A variety of techniques may be employed alone or in combination to reduce the incidence of defects arising in dielectric stack structures formed by chemical vapor deposition (CVD). Incidence of a first defect type attributable to reaction between an unreacted species of a prior CVD step and reactants of a subsequent CVD step, is reduced by exposing a freshly-deposited dielectric layer to a plasma before any additional layers are deposited. Incidence of a second defect type attributable to the presence of incompletely vaporized CVD liquid precursor material, is reduced by exposing the freshly-deposited dielectric layer to a plasma, and/or by continuing the flow of carrier gas through an injection valve for a period beyond the conclusion of the CVD step.Type: ApplicationFiled: April 10, 2008Publication date: October 23, 2008Applicant: Applied Materials, Inc.Inventors: Christopher Dennis Bencher, Lee Luo
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Publication number: 20080197109Abstract: A multilayer antireflective hard mask structure is disclosed. The structure comprises: (a) a CVD organic layer, wherein the CVD organic layer comprises carbon and hydrogen; and (b) a dielectric layer over the CVD organic layer. The dielectric layer is preferably a silicon oxynitride layer, while the CVD organic layer preferably comprises 70-80% carbon, 10-20% hydrogen and 5-15% nitrogen. Also disclosed are methods of forming and trimming such a multilayer antireflective hard mask structure. Further disclosed are methods of etching a substrate structure using a mask structure that contains a CVD organic layer and optionally has a dielectric layer over the CVD organic layer.Type: ApplicationFiled: October 31, 2007Publication date: August 21, 2008Applicant: Applied Materials, Inc.Inventors: David S. Mui, Wei Liu, Thorsten Lill, Christopher Dennis Bencher, Yuxiang May Wang
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Publication number: 20080108210Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.Type: ApplicationFiled: April 5, 2007Publication date: May 8, 2008Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
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Patent number: 7365014Abstract: We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.Type: GrantFiled: January 30, 2004Date of Patent: April 29, 2008Assignee: Applied Materials, Inc.Inventors: Christopher Dennis Bencher, Melvin Warren Montgomery, Alexander Buxbaum, Yung-Hee Yvette Lee, Jian Ding, Gilad Almogy, Wendy H. Yeh
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Publication number: 20080070421Abstract: A method is provided for processing a substrate surface by delivering a first gas mixture comprising a first organosilicon compound, a first oxidizing gas, and one or more hydrocarbon compounds into a chamber at deposition conditions sufficient to deposit a first low dielectric constant film on the substrate surface. A second gas mixture having a second organosilicon compound and a second oxidizing gas is delivered into the chamber at deposition conditions sufficient to deposit a second low dielectric constant film on the first low dielectric constant film. The flow rate of the second oxidizing gas into the chamber is increased, and the flow rate of the second organosilicon compound into the chamber is decreased to deposit an oxide rich cap on the second low dielectric constant film.Type: ApplicationFiled: September 20, 2006Publication date: March 20, 2008Inventors: Ping Xu, Christopher Dennis Bencher
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Publication number: 20080057681Abstract: A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber and furnishing a hydrocarbon process gas into the chamber, preferably propylene (C3H6) or toluene (C7H8) or acetylene (C2H2) or a mixture of acetylene and methane (C2H4). The process further includes inductively coupling RF plasma source power into the chamber while and applying RF plasma bias power to the wafer. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired stress (compressive or tensile). We have discovered that at a wafer temperature less than or equal to 475 degrees C.Type: ApplicationFiled: March 28, 2007Publication date: March 6, 2008Inventors: Vijay Parihar, Christopher Dennis Bencher, Rajesh Kanuri, Marlon E. Menezes
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Patent number: 7335462Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: GrantFiled: February 9, 2007Date of Patent: February 26, 2008Assignee: Applied Materials, Inc.Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
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Patent number: 7332262Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.Type: GrantFiled: June 16, 2005Date of Patent: February 19, 2008Assignee: Applied Materials, Inc.Inventors: Ian Latchford, Christopher Dennis Bencher, Yuxiang Wang, Mario Dave Silvetti
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Publication number: 20080026584Abstract: A gate hard mask is deposited on a gate structure using low pressure chemical vapor deposition (LPCVD). By doing so, the wet etch removal ratio (WERR) of the gate hard mask relative to the underlying polysilicon gate layer is increased when compared to prior art hard masks. The LPCVD gate hard mask will not only etch faster than prior art hard masks, but it will also reduce undercutting of the gate oxide. To provide additional control of the wet etch rate, the LPCVD hard mask can be annealed. The annealing can be tailored to achieve the desired etching rate.Type: ApplicationFiled: July 25, 2006Publication date: January 31, 2008Inventors: Rajesh Kanuri, Chorng-Ping Chang, Christopher Dennis Bencher, Hoiman Hung
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Patent number: 7223526Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: GrantFiled: December 21, 2004Date of Patent: May 29, 2007Assignee: Applied Materials, Inc.Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
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Patent number: 7148156Abstract: A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the invention provides a method for processing a substrate including depositing at least one dielectric layer on a substrate surface, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less, forming amorphous carbon material on the at least one dielectric layer, and removing the one or more amorphous carbon layers by exposing the one or more amorphous carbon layers to a plasma of a hydrogen-containing gas.Type: GrantFiled: February 8, 2005Date of Patent: December 12, 2006Assignee: Applied Materials, Inc.Inventor: Christopher Dennis Bencher
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Patent number: 7105442Abstract: A method is described for decreasing the critical dimensions of integrated circuit features in which a first masking layer (101) is deposited, patterned and opened in the manner of typical feature etching, and a second masking layer (201) is deposited thereon prior to etching the underlying insulator. The second masking layer is advantageously coated in a substantially conformal manner. Opening the second masking layer while leaving material of the second layer on the sidewalls of the first masking layer as spacers leads to reduction of the feature critical dimension in the underlying insulator. Ashable masking materials, including amorphous carbon and organic materials are removable without CMP, thereby reducing costs. Favorable results are also obtained utilizing more than one masking layer (101, 301) underlying the topmost masking layer (302) from which the spacers are formed. Embodiments are also described in which slope etching replaces the addition of a separate spacer layer.Type: GrantFiled: May 22, 2002Date of Patent: September 12, 2006Assignee: Applied Materials, Inc.Inventors: Hongching Shan, Kenny L. Doan, Jingbao Liu, Michael S. Barnes, Hong D. Nguyen, Christopher Dennis Bencher, Christopher S. Ngai, Wendy H. Yeh, Eda Tuncel, Claes H. Bjorkman
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Patent number: 6967072Abstract: A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes developing a pattern transferred into the resist layer with a photolithographic process and etching through the amorphous carbon layer in at least one region defined by the pattern in the resist layer, wherein a resist layer hard mask is formed in an outer portion of the photoresist layer during etching.Type: GrantFiled: August 2, 2001Date of Patent: November 22, 2005Assignee: Applied Materials, Inc.Inventors: Ian Latchford, Christopher Dennis Bencher, Yuxiang Wang, Mario Dave Silvetti
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Patent number: 6946401Abstract: The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.Type: GrantFiled: September 4, 2003Date of Patent: September 20, 2005Assignee: Applied Materials, Inc.Inventors: Judy H. Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S. Ngai, Bok Hoen Kim
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Patent number: 6924191Abstract: A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The features are formed on the substrate by removing the first mask and then etching the substrate using the second mask as an etch mask.Type: GrantFiled: June 16, 2003Date of Patent: August 2, 2005Assignee: Applied Materials, Inc.Inventors: Wei Liu, Thorsten B. Lill, David S. L. Mui, Christopher Dennis Bencher
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Patent number: 6853043Abstract: A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.Type: GrantFiled: November 4, 2002Date of Patent: February 8, 2005Assignee: Applied Materials, Inc.Inventors: Wendy H. Yeh, Sang Ahn, Christopher Dennis Bencher, Hichem M'Saad, Sudha Rathi
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Patent number: 6852647Abstract: A method is provided for processing a substrate including removing amorphous carbon material disposed on a low k dielectric material with minimal or reduced defect formation and minimal dielectric constant change of the low k dielectric material. In one aspect, the invention provides a method for processing a substrate including depositing at least one dielectric layer on a substrate surface, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less, forming amorphous carbon material on the at least one dielectric layer, and removing the one or more amorphous carbon layers by exposing the one or more amorphous carbon layers to a plasma of a hydrogen-containing gas.Type: GrantFiled: March 7, 2003Date of Patent: February 8, 2005Assignee: Applied Materials, Inc.Inventor: Christopher Dennis Bencher
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Patent number: 6841341Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.Type: GrantFiled: December 17, 2002Date of Patent: January 11, 2005Assignee: Applied Materials, Inc.Inventors: Kevin Fairbairn, Michael Rice, Timothy Weidman, Christopher S Ngai, Ian Scot Latchford, Christopher Dennis Bencher, Yuxiang May Wang
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Publication number: 20040087139Abstract: A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.Type: ApplicationFiled: November 4, 2002Publication date: May 6, 2004Applicant: Applied Materials, Inc.Inventors: Wendy H. Yeh, Sang Ahn, Christopher Dennis Bencher, Hichem M'Saad, Sudha Rathi
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Publication number: 20040046260Abstract: The present invention provides an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.Type: ApplicationFiled: September 4, 2003Publication date: March 11, 2004Applicant: Applied Materials, Inc.Inventors: Judy H. Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S. Ngai, Bok Hoen Kim