Abstract: A novel, hybrid optical fiber stub device comprises a first ferrule transparent to UV light and a second ferrule including a conventional material. An optical fiber is disposed through the first ferrule and second ferrule. The input and output faces of the optical fiber are prepared suitable for optical coupling. A photonic device is coupled to the first optical fiber surface. A UV curable epoxy is disposed between the photonic device and the first optical fiber surface. The UV curable epoxy includes an index of refraction between an index of refraction of the first optical fiber and an index of refraction of the photonic device. A second optical fiber is coupled to the first optical fiber.

Abstract: A computer-implemented system and method of analyzing spatial, temporal and contextual elements of data for predictive decision-making. The computer-implemented method includes receiving a first set of rules and receiving first data and second data including spatial, temporal and contextual elements. The computer-implemented method also includes identifying each rule of the first set for which the received first data and the received second data is a respective candidate. For the identified rules for which the received first data is a candidate, and for the identified rules for which the received second data is a candidate, the respective received first data and received second data is indexed by its temporal, spatial or contextual elements as a function of the identified rules. The computer-implemented method also includes identifying an event as satisfying an identified rule in memory using the indexed first and second data.

Abstract: A computer-implemented system and method of analyzing spatial, temporal and contextual elements of data for predictive decision-making. The computer-implemented method includes receiving a first set of rules and receiving first data and second data including spatial, temporal and contextual elements. The computer-implemented method also includes identifying each rule of the first set for which the received first data and the received second data is a respective candidate. For the identified rules for which the received first data is a candidate, and for the identified rules for which the received second data is a candidate, the respective received first data and received second data is indexed by its temporal, spatial or contextual elements as a function of the identified rules. The computer-implemented method also includes identifying an event as satisfying an identified rule in memory using the indexed first and second data.

Abstract: A computer-implemented system and method of analyzing spatial, temporal and contextual elements of data for predictive decision-making. The computer-implemented method includes receiving a first set of rules and receiving first data and second data including spatial, temporal and contextual elements. The computer-implemented method also includes identifying each rule of the first set for which the received first data and the received second data is a respective candidate. For the identified rules for which the received first data is a candidate, and for the identified rules for which the received second data is a candidate, the respective received first data and received second data is indexed by its temporal, spatial or contextual elements as a function of the identified rules. The computer-implemented method also includes identifying an event as satisfying an identified rule in memory using the indexed first and second data.

Abstract: The present invention relates to novel canine distemper virus (CDV) neutralization-resistant mutants, methods for making the same and uses for vaccine production.

Abstract: A novel, hybrid optical fibre stub device comprises a first ferrule transparent to UV light and a second ferrule including a conventional material. An optical fibre is disposed through the first ferrule and second ferrule. The input and output faces of the optical fibre are prepared suitable for optical coupling. A photonic device is coupled to the first optical fibre surface. A UV curable epoxy is disposed between the photonic device and the first optical fibre surface. The UV curable epoxy includes an index of refraction between an index of refraction of the first optical fibre and an index of refraction of the photonic device. A second optical fibre is coupled to the first optical fibre.

Abstract: An image sensor and method for measuring a refractive index of a material includes a semiconductor substrate having an exposed surface for facing the material, an array of pixels on the semiconductor substrate spaced from the exposed surface, and a light source on the semiconductor substrate configured to emit light into the semiconductor substrate toward the exposed surface to reflect the light off the exposed surface toward the array of pixels, wherein the array of pixels detect the light reflected by the exposed surface for calculating the refractive index of the material.

Abstract: In various embodiments, image sensors include output channels enabling high-gain and/or low-gain charge read-out while minimizing charge-conversion noise.

Abstract: A method for producing an image sensor includes providing a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is provided that is connected to an output of the horizontal shift register. A charge directing switch is provided that is electrically connected to the non-destructive sense node. The charge directing switch includes first and second outputs. A charge multiplying horizontal shift register is provided that is electrically connected to the first output of the charge directing switch. A bypass horizontal shift register or an amplifier is provided that is connected to the second output of the charge directing switch.

Abstract: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.

Abstract: A structure with improved electromigration resistance and methods for making the same. A structure having improved electromigration resistance includes a bulk interconnect having a dual layer cap and a dielectric capping layer. The dual layer cap includes a bottom metallic portion and a top metal oxide portion. Preferably the metal oxide portion is MnO or MnSiO and the metallic portion is Mn or CuMn. The structure is created by doping the interconnect with an impurity (Mn in the preferred embodiment), and then creating lattice defects at a top portion of the interconnect. The defects drive increased impurity migration to the top surface of the interconnect. When the dielectric capping layer is formed, a portion reacts with the segregated impurities, thus forming the dual layer cap on the interconnect. Lattice defects at the Cu surface can be created by plasma treatment, ion implantation, a compressive film, or other means.

Abstract: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.

Abstract: A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

Abstract: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.

Abstract: A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

Abstract: A structure with improved electromigration resistance and methods for making the same. A structure having improved electromigration resistance includes a bulk interconnect having a dual layer cap and a dielectric capping layer. The dual layer cap includes a bottom metallic portion and a top metal oxide portion. Preferably the metal oxide portion is MnO or MnSiO and the metallic portion is Mn or CuMn. The structure is created by doping the interconnect with an impurity (Mn in the preferred embodiment), and then creating lattice defects at a top portion of the interconnect. The defects drive increased impurity migration to the top surface of the interconnect. When the dielectric capping layer is formed, a portion reacts with the segregated impurities, thus forming the dual layer cap on the interconnect. Lattice defects at the Cu surface can be created by plasma treatment, ion implantation, a compressive film, or other means.

Abstract: An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A bypass horizontal shift register or an amplifier can be connected to the other output of the charge directing switch.

Abstract: A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

Abstract: In various embodiments, image-capture methods include a mode in which an image is acquired via charge accumulation in multiple regions of an imaging array and read out to one or more outputs, and/or a mode in which an image is acquired via charge accumulation in a first region of an imaging array, held in vertical CCDs of another region of the imaging array, and read out along with a second image acquired via charge accumulation in the first region of the imaging array.

Abstract: A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.