Abstract: A method for reading out an image signal includes providing at least two photosensitive regions and providing at least two transfer gates respectively associated with each photosensitive region. The method also includes providing a common charge-to-voltage conversion region electrically connected to the transfer gates and providing a reset mechanism that resets the common charge-to-voltage conversion region. After transferring charge from at least one of the photo-sensitive regions, all the transfer gates are disabled at a first time. The method further includes enabling at least one transfer gate at a subsequent second time and transferring charge from at least one of the photosensitive regions at a subsequent third time while the at least one transfer gate from the second time remains enabled.

Abstract: Methods, systems, and apparatus for analyzing aggregate ratio metric changes are provided. The method includes storing a plurality of metrics in a memory device, identifying a first measurement of a ratio metric for a first time period and a second measurement of the ratio metric for a second time period from the plurality of metrics stored in the memory device, wherein a change has occurred in the ratio metric between the first time period and the second time period, identifying at least one component associated with the change, determining, using a computer device, at least one component vector corresponding to the at least one component, using the computer device to convert each of the at least one component vectors into a scalar, and identifying a percentage of change for each of the scalars.

Abstract: In various embodiments, image-capture methods include a mode in which an image is acquired via charge accumulation in multiple regions of an imaging array and read out to one or more outputs, and/or a mode in which an image is acquired via charge accumulation in a first region of an imaging array, held in vertical CCDs of another region of the imaging array, and read out along with a second image acquired via charge accumulation in the first region of the imaging array.

Abstract: An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A discharging element is connected to the other output of the charge directing switch.

Abstract: A method for producing an image sensor includes providing a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is provided that is connected to an output of the horizontal shift register. A charge directing switch is provided that is electrically connected to the non-destructive sense node. The charge directing switch includes first and second outputs. A charge multiplying horizontal shift register is provided that is electrically connected to the first output of the charge directing switch. A bypass horizontal shift register or an amplifier is provided that is connected to the second output of the charge directing switch.

Abstract: A method for producing an image sensor includes: providing a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array; providing a non-destructive sense node connected to an output of the horizontal shift register; providing a charge directing switch electrically connected to the non-destructive sense node, where the charge directing switch includes first and second outputs; providing a charge multiplying horizontal shift register electrically connected to the first output of the charge directing switch; and providing a discharging element connected to the second output of the charge directing switch.

Abstract: A structure with improved electromigration resistance and methods for making the same. A structure having improved electromigration resistance includes a bulk interconnect having a dual layer cap and a dielectric capping layer. The dual layer cap includes a bottom metallic portion and a top metal oxide portion. Preferably the metal oxide portion is MnO or MnSiO and the metallic portion is Mn or CuMn. The structure is created by doping the interconnect with an impurity (Mn in the preferred embodiment), and then creating lattice defects at a top portion of the interconnect. The defects drive increased impurity migration to the top surface of the interconnect. When the dielectric capping layer is formed, a portion reacts with the segregated impurities, thus forming the dual layer cap on the interconnect. Lattice defects at the Cu surface can be created by plasma treatment, ion implantation, a compressive film, or other means.

Abstract: An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A bypass horizontal shift register or an amplifier can be connected to the other output of the charge directing switch.

Abstract: An ultrasound medical system includes an interstitial end effector. The interstitial end effector is interstitially insertable into patient tissue, includes at least one medical-treatment ultrasound transducer, and includes at least one end-effector-tissue-track ablation device. One method for ultrasonically treating a lesion in a patient includes the steps of obtaining the interstitial end effector and inserting it into the patient creating a tissue track which is surrounded by patient tissue and which ends at the distal end of the inserted interstitial end effector. Other steps include ultrasonically ablating the lesion using the at-least-one medical-treatment ultrasound transducer, using the at-least-one end-effector-tissue-track ablation device to ablate the patient tissue surrounding the tissue track along substantially the entire tissue track, and withdrawing the end effector from the patient.

Abstract: Charge packets are transferred from a pixel array in an image sensor to a horizontal shift register. Each charge packet is shifted to a non-destructive sense node. Each charge packet is non-destructively sensed and a signal representative of a number of charge carriers in the charge packet is produced. Respective charge packets are directed to a charge multiplying output channel when the signal representative of the number of charge carriers in each charge packet indicates the charge packet will not saturate the charge multiplying horizontal shift register. Respective charge packets are directed to a charge bypass output channel or an amplifier when the signal representative of the number of charge carriers in each charge packet indicates the charge packet will saturate the charge multiplying horizontal shift register.

Abstract: An image sensor includes multiple output channels, a non-destructive charge sensing output channel having an associated gain value of G1 and a charge multiplying output channel having an associated gain value G3. The image sensor can also include a charge bypass output channel having an associated gain value G2. For each charge packet, a pixel signal produced by either the charge sensing output channel, the charge multiplying output channel or the charge bypass output channel is selected. If the pixel signal produced by the charge sensing output channel is selected, a gain factor (G3/G1) is applied to each pixel signal selected from the charge bypass output channel. If the pixel signal produced by the charge bypass output channel is selected, a gain factor (G3/G2) is applied to each pixel signal selected from the charge bypass output channel. The pixel signals are combined to produce an image.

Abstract: A method for producing an image sensor includes providing a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is provided that is connected to an output of the horizontal shift register. A charge directing switch is provided that is electrically connected to the non-destructive sense node. The charge directing switch includes first and second outputs. A charge multiplying horizontal shift register is provided that is electrically connected to the first output of the charge directing switch. A bypass horizontal shift register or an amplifier is provided that is connected to the second output of the charge directing switch.

Abstract: In various embodiments, image sensors include output channels enabling high-gain and/or low-gain charge read-out while minimizing charge-conversion noise.

Abstract: A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

Abstract: In various embodiments, a charge-coupled device includes channel stops laterally spaced away from the channel by fully depleted regions.

Abstract: A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

Abstract: A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

Abstract: A CCD image sensor includes vertical CCD shift registers and gate electrodes disposed over the vertical CCD shift registers. The gate electrodes are divided into distinct groups of gate electrodes. The CCD image sensor is adapted to operate in an accumulation mode and a charge transfer mode, an accumulation mode and a charge shifting mode, or an accumulation mode, a charge transfer mode, and a charge shifting mode. The charge transfer mode has an initial charge transfer phase and a final charge transfer phase. The charge shifting mode has an initial charge shifting phase and a final charge shifting phase.

Abstract: An image sensor includes a horizontal shift register electrically connected to a pixel array for receiving charge packets from the pixel array. A non-destructive sense node is connected to an output of the horizontal shift register. A charge directing switch is electrically connected to the non-destructive sense node. The charge directing switch includes two outputs. A charge multiplying horizontal shift register is electrically connected to one output of the charge directing switch. A discharging element is connected to the other output of the charge directing switch.

Abstract: An image sensor that includes a plurality of pixels disposed on a substrate, each pixel includes at least one photosensitive region that collects charges in response to incident light; a charge-to-voltage conversion node for sensing the charge from the at least one photosensitive region and convening the charge to a voltage; an amplifier transistor having a source connected to an output node, having a gate connected to the charge-to-voltage conversion node and having a drain connected to at least a portion of a power supply node; and a reset transistor connecting the output node and the charge-to-voltage conversion node.