Patents by Inventor Chrystel Deguet
Chrystel Deguet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9991439Abstract: A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.Type: GrantFiled: July 5, 2011Date of Patent: June 5, 2018Assignees: Commissariat à l'énergie atomique et aux énergies alternatives, SOITECInventors: Chrystel Deguet, Nicolas Blanc, Bruno Imbert, Jean-Sebastien Moulet
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Patent number: 9769931Abstract: A method for producing an electronic device including in a stack at least a first structure and a second structure, the structures being obtained from a first substrate and a second substrate. Marks are obtained from a pattern made on one of the substrates. Furthermore, the same supporting members are used during the bonding phase for the preparation of the marks and for the bonding phase for the assembly of the structures.Type: GrantFiled: July 29, 2016Date of Patent: September 19, 2017Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Franck Fournel, Chrystel Deguet
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Patent number: 9638847Abstract: A method for producing a colored or fluorescent substrate with a view to formation of a colored or fluorescent image including the formation. The method defines on a substrate of a colored or fluorescent matrix, pixels of at least two different colors, wherein each pixel forms a filter for a given color. At least one filter is an interferential filter or a filter obtained with colored or fluorescent particles.Type: GrantFiled: June 4, 2010Date of Patent: May 2, 2017Assignee: Commissariat à l'énergie atomique et aux énergies alternativesInventors: Alain-Marcel Rey, Chrystel Deguet, Laurent Frey, Francois Tardif
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Publication number: 20170034919Abstract: A method for producing an electronic device including in a stack at least a first structure and a second structure, the structures being obtained from a first substrate and a second substrate. Marks are obtained from a pattern made on one of the substrates. Furthermore, the same supporting members are used during the bonding phase for the preparation of the marks and for the bonding phase for the assembly of the structures.Type: ApplicationFiled: July 29, 2016Publication date: February 2, 2017Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Franck FOURNEL, Chrystel DEGUET
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Patent number: 9106199Abstract: An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.Type: GrantFiled: October 4, 2010Date of Patent: August 11, 2015Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Chrystel Deguet, Laurent Clavelier, Emmanuel Defay, Alexandre Reinhardt
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Patent number: 9076713Abstract: The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localized positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.Type: GrantFiled: January 23, 2013Date of Patent: July 7, 2015Assignees: Soitec, Commissariat à l'Énergie AtomiqueInventors: Thomas Signamarcheix, Frederic Allibert, Chrystel Deguet
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Patent number: 8841202Abstract: A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.Type: GrantFiled: February 12, 2010Date of Patent: September 23, 2014Assignee: Commissariat a l'Energie AtomiqueInventors: Franck Fournel, Thomas Signamarcheix, Laurent Clavelier, Chrystel Deguet
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Patent number: 8715517Abstract: A process for fabricating an acoustic wave resonator comprising a suspended membrane comprising a piezoelectric material layer, comprises the following steps: production of a first stack comprising at least one layer of first piezoelectric material on the surface of a first substrate; production of a second stack comprising at least one second substrate; production of at least one non-bonding initiating zone by deposition or creation of particles of controlled sizes leaving the surface of one of said stacks endowed locally with projecting nanostructures before a subsequent bonding step; direct bonding of said two stacks creating a blister between the stacks, due to the presence of the non-bonding initiating zone; and, thinning of the first stack to eliminate at least the first substrate.Type: GrantFiled: December 8, 2011Date of Patent: May 6, 2014Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Bruno Imbert, Emmanuel Defay, Chrystel Deguet, Hubert Moriceau, Mathieu Pijolat
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Patent number: 8664084Abstract: A method for making a thin-film element includes epitaxially growing a first crystalline layer on a second crystalline layer of a support where the second crystalline layer is a material different from the first crystalline layer, the first crystalline layer having a thickness less than a critical thickness. A dielectric layer is formed on a side of the first crystalline layer opposite to the support to form a donor structure. The donor structure is assembled with a receiver layer and the support is removed.Type: GrantFiled: September 25, 2006Date of Patent: March 4, 2014Assignee: Commissariat a l'Energie AtomiqueInventors: Chrystel Deguet, Laurent Clavelier
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Patent number: 8501589Abstract: A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.Type: GrantFiled: October 29, 2009Date of Patent: August 6, 2013Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Franck Fournel, Thomas Signamarcheix, Laurent Clavelier, Chrystel Deguet
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Patent number: 8445122Abstract: A data storage medium includes a carrier substrate having an electrode layer on the surface thereof and a sensitive material layer extending along the electrode layeradapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layer and is configured to accommodate at least one element for application of an electrostatic field in combination with the electrode layer the electrode layer including a plurality of conductive portions having a dimension at most equal to 100 nm in at least one direction parallel to the reference plane and separated by at least one electrically insulative zone, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.Type: GrantFiled: December 18, 2008Date of Patent: May 21, 2013Assignees: Commissariat a l 'Energie Atomique, S.O.I. Tec Silicon on Insulator TechnologiesInventors: Chrystel Deguet, Laurent Clavelier, Franck Fournel, Jean-Sebastien Moulet
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Publication number: 20130111719Abstract: A method of producing a structure made of a piezoelectric material, including: a) production of a stack including at least one metal layer and at least one conductive layer on a substrate made of piezoelectric material, wherein at least one electrical contact is established between the conductive layer and a metal element outside the stack; b) an ionic and/or atomic implantation, through the conductive layer and the metal layer; c) transfer of the substrate onto a transfer substrate, followed by fracturing of the transferred piezoelectric substrate, in an embrittlement area.Type: ApplicationFiled: July 5, 2011Publication date: May 9, 2013Applicants: SOITEC, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Chrystel Deguet, Nicolas Blanc, Bruno Imbert, Jean-Sebastien Moulet
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Patent number: 8372733Abstract: The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.Type: GrantFiled: September 2, 2009Date of Patent: February 12, 2013Assignees: Soitec, Commissariat à l'Énergie AtomiqueInventors: Thomas Signamarcheix, Frederic Allibert, Chrystel Deguet
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Patent number: 8318555Abstract: A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.Type: GrantFiled: October 29, 2009Date of Patent: November 27, 2012Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Thomas Signamarcheix, Franck Fournel, Laurent Clavelier, Chrystel Deguet
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Patent number: 8293620Abstract: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.Type: GrantFiled: July 7, 2009Date of Patent: October 23, 2012Assignees: Commissariat a l'Energie Atomique et aux Energies Alternatives, S.O.I. TEC Silicon On Insulator TechnologiesInventors: Thomas Signamarcheix, Chrystel Deguet, Frederic Mazen
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Patent number: 8288250Abstract: A method for making a stack of at least two stages of circuits, each stage including a substrate and at least one component and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage including: a) ionic implantation in the substrate of the stage to be transferred through at least part of the components, so as to form a weakened zone, b) formation of metallic connections of the components, c) transfer and assembly of some of this substrate onto the previous stage, and d) a step to thin the transferred part of the substrate by fracture along the weakened zone.Type: GrantFiled: September 22, 2009Date of Patent: October 16, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Laurent Clavelier, Chrystel Deguet, Patrick Leduc, Hubert Moriceau
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Patent number: 8274151Abstract: An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor.Type: GrantFiled: January 23, 2009Date of Patent: September 25, 2012Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Alain Rey, Chrystel Deguet, Laurent Vandroux
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Publication number: 20120206216Abstract: An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.Type: ApplicationFiled: October 4, 2010Publication date: August 16, 2012Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Chrystel Deguet, Laurent Clavelier, Emmanuel Defay, Alexandre Reinhardt
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Publication number: 20120164399Abstract: A method for producing a colored or fluorescent substrate with a view to formation of a colored or fluorescent image including the formation. The method defines on a substrate of a colored or fluorescent matrix, pixels of at least two different colors, wherein each pixel forms a filter for a given color. At least one filter is an interferential filter or a filter obtained with colored or fluorescent particles.Type: ApplicationFiled: June 4, 2010Publication date: June 28, 2012Applicant: COMMISARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Alain-Marcel Rey, Chrystel Deguet, Laurent Frey, Francois Tardif
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Patent number: 8207048Abstract: Method for producing nanostructures comprising: a step of providing a substrate (100) having a buried barrier layer (2) and above said barrier layer (2) a crystalline film (5) provided with a network of crystalline defects and/or stress fields (12) in a crystalline zone (13), one or several steps of attacking the substrate (100), of which a preferential attack either of the crystalline defects and/or the stress fields, or the crystalline zone (13) between the crystalline defects and/or the stress fields, said attack steps enabling the barrier layer (2) to be laid bared locally and protrusions (7) to be formed on a nanometric scale, separated from each other by hollows (7.1) having a base located in the barrier layer, the protrusions leading to nanostructures (7, 8).Type: GrantFiled: December 19, 2006Date of Patent: June 26, 2012Assignee: Commissariat a l'Energie AtomiqueInventors: Franck Fournel, Hubert Moriceau, Chrystel Deguet