Abstract: A process for fabricating an acoustic wave resonator comprising a suspended membrane comprising a piezoelectric material layer, comprises the following steps: production of a first stack comprising at least one layer of first piezoelectric material on the surface of a first substrate; production of a second stack comprising at least one second substrate; production of at least one non-bonding initiating zone by deposition or creation of particles of controlled sizes leaving the surface of one of said stacks endowed locally with projecting nanostructures before a subsequent bonding step; direct bonding of said two stacks creating a blister between the stacks, due to the presence of the non-bonding initiating zone; and, thinning of the first stack to eliminate at least the first substrate.

Abstract: A method for producing a device, with a graphical element, including: a) producing a stack including at least one sacrificial layer positioned between a first substrate and a protective layer, and a graphical element produced in a first face of the protective layer opposite a second face of the protective layer, such that the second face is positioned against the sacrificial layer; b) attaching the stack to at least one second substrate such that the graphical element is positioned between the first substrate and the second substrate; and c) separating the sacrificial layer from the protective layer.

Abstract: A method of transferring a thin film onto a first support, includes supplying a structure comprising a film of which at least one part originates from a solid substrate of a first material and which is solidly connected to a second support having a thermal expansion coefficient that is different from that of the first material and close to that of the first support, forming an embrittled area inside the film that defines the thin film to be transferred, affixing the film that is solidly connected to the second support to the first support, and breaking the film at the embrittled area.

Abstract: A substrate configured to support at least one electronic or electromechanical component and one or more nano-elements, formed with a base support, with a catalytic system, with a barrier layer, and with a layer configured to receive the electronic or electromechanical component, in single-crystal Si or in Ge or in a mixture of these materials. The catalytic system lies on the base support without any contact with the layer configured to receive electronic or electromechanical component and the barrier layer is sandwiched between the catalytic system and the layer configured to receive the electronic or electromechanical component. This barrier layer is without any contact with the base support.

Abstract: A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallisation of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.

Abstract: The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.

Abstract: A process for forming a thin film of a given material includes providing a first substrate having, on the surface, an amorphous and/or polycrystalline film of the given material and a second substrate is bonded to the first substrate by hydrophobic direct bonding (molecular adhesion), the second substrate having a single-crystal reference film of a given crystallographic orientation on the surface thereof. A heat treatment is applied at least to the amorphous and/or polycrystalline film, where the heat treatment causes at least a portion of the amorphous and/or polycrystalline film to undergo solid-phase recrystallization along the crystallographic orientation of the reference film, where the reference film acts as a recrystallization seed. The at least partly recrystallized film is then separated from at least a portion of the reference film.

Abstract: A method of implanting atoms and/or ions into a substrate, including: a) a first implantation of ions or atoms at a first depth in the substrate, to form a first implantation plane, b) at least one second implantation of ions or atoms at a second depth in the substrate, which is different from the first depth, to form at least one second implantation plane.

Abstract: An object including at least one graphic element, including at least one layer including at least one metal and etched according to a pattern of the graphic element, a first face of the layer being positioned opposite a face of at least one at least partly transparent substrate, a second face, opposite to the first face, of the layer being covered with at least one passivation layer fixed to at least one face of at least one support by wafer bonding and forming with the support a monolithic structure, and the layer including at least at the second face, at least one area including the metal and at least one semiconductor.

Abstract: A method of producing a strained layer on a substrate includes assembling a layer with a first structure or first means of straining including at least one substrate or one layer capable of being deformed within a plane thereof under the influence of an electric or magnetic field or a photon flux. The layer is strained by modifying the electric or magnetic field or the photon flux. The strained layer is assembled with a transfer substrate and all or part of the first straining structure is removed.

Abstract: A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.

Abstract: A method for fabricating semiconductor on insulator wafers by providing a semiconductor substrate or a substrate that includes an epitaxial semiconductor layer as a source substrate, attaching the source substrate to a handle substrate to form a source handle assembly and detaching the source substrate at a predetermined splitting area provided inside the source substrate and being essentially parallel to its main surface, to remove a layer from the source handle assembly to thereby create the semiconductor on insulator wafer. A diffusion barrier layer, in particular, an oxygen diffusion barrier layer can be provided on the source substrate. In addition the invention relates to the corresponding semiconductor on insulator wafers that are produced by the method.

Abstract: The invention relates to a method for detecting defects, more particularly emergent dislocations of an element having at least one crystalline germanium-base superficial layer. The method comprises an annealing step of the element in an atmosphere having a base that is a mixture of at least an oxidizing gas and a neutral gas enabling selective oxidizing of the emergent dislocations of the crystalline germanium-base superficial layer.

Abstract: The invention relates to a method for making a stack of at least two stages of circuits, each stage comprising a substrate and at least one component (10, 20) and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage comprising: a) ionic implantation (29) in the substrate (2, 25) of the stage to be transferred through at least part of the components (10, 20), so as to form a weakened zone (30), b) formation of metallic connections of said components, c) transfer and assembly of some of this substrate onto the previous stage, d) a step to thin the transferred part of said substrate by fracture along the weakened zone (30).

Abstract: The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.

Abstract: The invention relates to a method for manufacturing an SOI substrate, associating silicon based areas and areas of GaAs based material at the thin layer of the SOI substrate, the SOI substrate comprising a silicon support supporting successively a layer of dielectric material and a thin layer of silicon.

Abstract: A method of producing a strained layer on a substrate includes assembling a layer with a first structure or first means of straining including at least one substrate or one layer capable of being deformed within a plane thereof under the influence of an electric or magnetic field or a photon flux. The layer is strained by modifying the electric or magnetic field or the photon flux. The strained layer is assembled with a transfer substrate and all or part of the first straining structure is removed.

Abstract: A data storage medium includes a carrier substrate having an electrode layer on the surface,and a sensitive material layer extending along the electrode layer, the volume whereof is adapted to be locally modified between two electrical states by the action of a localized electric field. A reference plane extends globally parallel to the sensitive material layerand is configured to pass along it at least one element for application of an electrostatic field in combination with the electrode layer. The storage medium also includes, parallel to the reference plane, a plurality of conductive portions forming part of the electrode layer and separated by at least one electrically insulative zone, the electrically conductive portions having, in at least one direction parallel to the reference plane, a dimension at most equal to 100 nm, where at least some of the conductive portions are electrically interconnected, the conductive portions defining data write/read locations within the sensitive material layer.

Abstract: A method of transferring a thin film onto a first support, includes supplying a structure comprising a film of which at least one part originates from a solid substrate of a first material and which is solidly connected to a second support having a thermal expansion coefficient that is different from that of the first material and close to that of the first support, forming an embrittled area inside the film that defines the thin film to be transferred, affixing the film that is solidly connected to the second support to the first support, and breaking the film at the embrittled area.

Abstract: The invention relates to a treatment method of a structure comprising a thin Ge layer on a substrate, said layer having been previously bonded with the substrate, the method comprising a treatment to improve the electrical properties of the layer and/or the interface of the Ge layer with the underlying layer, characterised in that said treatment is a heat treatment applied at a temperature between 500° C. and 600° C. for not more than 3 hours.