Abstract: Provided are integral probe and method of transmitting signal therethrough. The probe is formed of an elongate coil spring including an intermediate portion and two end portions either connected to a signal transmission starting terminal or a signal transmission ending terminal. The number of the coils of the spring in a predetermined portion thereof is larger than that of the remaining portions. A signal transmission method comprises compressing the spring and passing a signal through the spring. The invention can cause signal to pass quickly with decreased resistance and substantially no inductance.

Abstract: A polarizing device contains a transparent plate and a birefringent material spread within the transparent plate. The birefringent material converts natural light propagating in the transparent plate into a first linearly polarized light and a second linearly polarized light, where the first and second linearly polarized lights are refracted toward different directions by the birefringent materials.

Abstract: A display includes a flat display panel and at least a polarizer positioned on an upper surface or a lower surface of the flat display panel. The polarizer has at least a surface treated with a roughness treatment.

Abstract: A titanium oxide extended gate field effect transistor (EGFET) device and fabricating method thereof. Titanium oxide is formed on an EGFET by sputtering, coating a detection membrane therefor. Current-voltage relationships at different pH values are also measured via a current measuring system. Sensitivity parameter of the titanium oxide EGFET is calculated according to a relationship between a pH value and a gate voltage.

Abstract: An LED light-mixing package providing white light has at least a red LED chip, at least a blue LED chip, at least a green LED chip, and pluralities of diffuser particles distributed in a sealing member that covers the LED chips, or integrate a lens. The diffuser particles scatter light emitted from the LED chips in the sealing member so that light is mixed and the LED light-mixing package produces white light.

Abstract: A method for fabricating an array pH sensor and a readout circuit device of such array pH sensor are implemented by utilizing an extended ion sensitive field effect transistor to construct the array pH sensor and related readout circuit. The structure of the array sensor having this extended ion sensitive field effect transistor comprises a tin dioxide/metal/silicon dioxide multi-layer structure sensor and a tin dioxide/indium tin oxide/glass multi-layer structure sensor and has excellent properties. Furthermore, the readout circuit and the sensor utilize two signal generators for controlling and reading signals. In particular, the sensor can be effective for increasing the accuracy of measurement and reducing the interference of noise.

Abstract: Methods for fabricating ion sensitive field effect transistors (ISFETs) with SnO2 extended gates. A SnO2 detection film is formed on a substrate by sol-gel technology to serve as an extended gate. The SnO2 detection film is electrically connected to a conductive wire, and an insulating layer is formed on the surface of the ISFET but part of the SnO2 detection film and the conductive wire are left exposed. The exposed conductive wire is electrically connected to a gate terminal of a MOS transistor.

Abstract: The present invention is a sensor for detecting urea using a separating-style structure of ion-selective electrode, in which an ammonium ion-selective membrane is immobilized on a conductive layer on the surface of a substrate, said conductive layer has a sensing region and a non-sensing region after packaged, and a conductive line is used to retrieve a sensing signal from said conductive layer. In the end, employing the enzyme immobilization method to immobilize a urea enzyme onto ammonium ion-selective membrane, thus the fabrication of a potentiometric urea sensor is completed.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: Methods for fabricating ion sensitive field effect transistors (ISFETs) with SnO2 extended gates. A SnO2 detection film is formed on a substrate by sol-gel technology to serve as an extended gate. The SnO2 detection film is electrically connected to a conductive wire, and an insulating layer is formed on the surface of the ISFET but part of the SnO2 detection film and the conductive wire are left exposed. The exposed conductive wire is electrically connected to a gate terminal of a MOS transistor.

Abstract: A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

Abstract: A penicillin G biosensor, systems comprising the same, and measurement using the systems. The penicillin G biosensor has an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a tin oxide film on the substrate, and a penicillin G acylase film immobilized on the tin oxide film, and a conductive wire connecting the MOSFET and the sensing unit.

Abstract: A display module housing for fixing a display panel comprises a frame structure, at least a fixing mechanism, and at least a flexible fastening device disposed on the topside of the sidewall of the frame structure. When the display panel is positioned in the frame structure, the fixing mechanism and the flexible fastening device clip the display panel so that the display panel is fixed in the display module housing.

Abstract: In this present invention it was fabricated to be relates to manufacturing a ceramic interface electrochemical reference electrode for use together with biomedical sensors. Most potentiometric biomedical sensors must have the need to be connected to a reference electrode to offer the readout circuit a stable voltage in the different solutions when measuring for providing that can provide a standard comparing voltage to avoid measuring errors caused by an unstable environment. Usually, However, the presently available commercial reference electrode we used is too big in size and inconvenient to store. For this reason we develop the ceramic interface electrochemical reference electrode which can minimize volume and need not to be preserved in the saturated solution for biosensor. Therefore, the ceramic interface electrochemical reference electrode of the present invention does not need to be stored in solution and can be minimized for use in future sensors.

Abstract: A potassium/sodium ion sensing device applying an extended-gate field effect transistor, which using an extended-gate ion sensitive field effect transistor (EGFET) as base to fabricate a potassium/sodium ion sensing device, using the extended gate of the extended-gate ion sensitive field effect transistor as a signal intercept electrode, and immobilizing the hydro-aliphatic urethane diacrylate (EB2001) intermixed with electronegative additive, potassium ionophore, sodium ionophore, and the like, to fabricate a potassium/sodium ion sensing electrode. The present invention utilizes the photocurability and good hydrophilicity of the hydro-aliphatic urethane diacrylate (EB2001), and fixes potassium/sodium ionophore, can obtain a non-wave filter, single-layer, stable signal potassium and sodium ion sensor.

Abstract: A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.

Abstract: Provided is a pad type wafer test apparatus comprises a disk-shaped substrate, a buffer assembly comprising a cross-shaped seat, a body, a buffer pad, and a rectangular frame element, a conductive assembly, and a rectangular test probe mechanism provided between the body and the conductive member and electrically coupled thereto. In a conductivity test for finding any defect in wafer a wafer is placed on a machine, the test probe mechanism is placed on the wafer with test probes of the test probe mechanism being in contact with the wafer by inserting into an oxidized film on the wafer, and test result is transmitted to a display via the test probes and the substrate. The invention can accurately find any wafer defect, protect test probes, and effect a dense configuration of test probes.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: A method of manufacturing a titanium dioxide (TiO2) thin film, used as the sensing film of the ISFET, prepared on the gate oxide by sputtering deposition. It also utilizes current/voltage measuring system to measure the current-voltage curves for the different pH values and temperatures. From the relationship of the current-voltage curves and temperatures, the temperature parameter of the TiO2 gate pH-ISFET can be calculated. In addition, it also uses a constant voltage/current circuit and a voltage-time recorder to measure the output voltage of the TiO2 gate pH-ISFET, the drift rates for the different pH values and hysteresis for different pH loops are calculated.