Abstract: A method of measuring the the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solution; (3) recording the gate/source output voltage of the a-Si:H ISFET by using a voltage-time recorder; and (4) exchanging the pH value of the buffer solution and then repeating the steps of (1)˜(3).

Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.

Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.

Abstract: The present invention relates to an electrochemical gaseous chlorine sensor. The sensor is characterized by covering one of the electrodes with a polymer material having a sensing activity and conductivity. The sensor includes: an ionic permeable film for separating a measuring chamber and a reference chamber, the ionic permeable film being a solid polymer electrolyte; a first electrode and a second electrode formed on two opposite sides of the ionic permeable film, the first electrode and the second electrode being conductors with catalytic activities; and a conductive polymer film formed on the first electrode. A fixed voltage ranging from −0.3 to 1.3V, preferably 0 to 0.2V, between said first electrode and said second electrode is maintained with a device, when the sensor is in use.

Abstract: A fastening rope has a buckle, two rope members and two hooking members. The rope members are each connected to the buckle from one end and the respective hooking member from other end. The rope members are elastic so they can stretch to fasten objects with the hooking members fixed in position. The fastening rope won't become loose when used to fasten cargos in a truck when the dimensions of the cargos become smaller due to shaking of the truck, change of position of the cargos or collision between the cargos.

Abstract: Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

Abstract: A securing net for luggage has a fine net, a main net and hooking elements. The fine net is disposed in the middle. The main net is made of a rope having a first part arranged to from several spaced apart shaped loops each having an inner end portion connected to an outer part of the fine net; the rope having a second part arranged across intermediate portions of the shaped loops, approaching the fine net with fixing elements coupled to intersections of the rope. The hooking elements are coupled to an outer part of the main net for connecting the securing net to a luggage rack. The securing net can secure small objects on the luggage rack of a station wagon by means of the fine net.

Abstract: A net for securing objects has a central ring, a rope, fixing elements and hooking elements. The rope is arranged to form several shaped loops each having an inner pointed end portion passes through the central ring. Other parts of the rope are arranged to cross intermediate portions of the shaped loops, approaching the central ring. The fixing elements are fastened to the pointed end portions, and intersections of all parts of the rope. The hooking elements are fastened to the outermost parts of the net for permitting the net to be tied to rack to secure objects on the rack.

Abstract: A net for securing objects has a central ring, a rope, fixing elements and hooking elements. The rope is arranged to form several shaped loops each having an inner pointed end portion passes through the central ring. Other parts of the rope are arranged to cross intermediate portions of the shaped loops, approaching the central ring. The fixing elements are fastened to the pointed end portions, and intersections of all parts of the rope.

Abstract: A securing net for luggage has a fine net, a main net and hooking elements. The fine net is disposed in the middle. The main net is made of a rope having a first part arranged to from several spaced apart shaped loops each having an inner end portion connected to an outer part of the fine net; the rope having a second part arranged across intermediate portions of the shaped loops, approaching the fine net with fixing elements coupled to intersections of the rope. The hooking elements are coupled to an outer part of the main net for connecting the securing net to a luggage rack. The securing net can secure small objects on the luggage rack of a station wagon by means of the fine net.

Abstract: A method of measuring the hysteresis value and the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solution; (3) recording the gate/source output voltage of the a-Si:H ISFET by using a voltage-time recorder; and (4) exchanging the pH value of the buffer solution and then repeating the steps of (1)˜(3).

Abstract: A method and an apparatus for measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, which uses the measurements of the temperature parameters and the source/drain current and gate voltage in an unknown solution to sense the ion concentration and the pH value of the unknown solution.

Abstract: A xerographic photoreceptor primarily formed by amorphous silicon material is disclosed, wherein the xerographic photoreccptor is a photosensitive drum used in copying and manufactured by the plasma enhanced low pressure chemical vapor deposition system. Such a drum has a higher resolution, and a longer lifetime. In this structure, an Al2O3 oxidization layer is grown on an aluminum substrate. Then a n type hydrogenated amorphous silicon blocking layer is grown on the aluminum substrate with Al2O3 oxidization layer. Then an intrinsic hydrogenated amorphous silicon charge generating transmission layer is grown on the n type hydrogenated amorphous silicon blocking layer. Finally a hydrogenated amorphous carbon surface protecting layer is grown on the intrinsic hydrogenated amorphous silicon charge generation transport layer for forming a xerographic photoreceptor with a multiple layer structure.

Abstract: The present invention discloses a method of forming a metal layer by thermal evaporation or RF reactive sputtering in order to fabricate a light shielding layer for an ion sensitive field effect transistor. The multi-layered construction of the ion sensitive field effect transistor with a metal thin film as a light shielding layer is SnO2/metal/SiO2 or SnO2/metal/Si3N4/SiO2, and is able to lower the effect of light successfully.

Abstract: A sensitive material-tin oxide (SnO2) obtained by thermal evaporation or by r.f. reactive sputtering is used as a high-pH-sensitive material for a Multi-Structure Ion Sensitive Field Effect Transistor. The multi-structure of this Ion Sensitive Field Effect Transistor (ISFET) includes SnO2/SiO2 gate ISFET or SnO2/Si3N4/SiO2 gate ISFET respectively, and which have high performances such as a linear pH sensitivity of approximately 56˜58 mV/pH in a concentration range between pH2 and pH10. A low drift characteristics of approximately 5 mv/day, response time is less than 0.1 second, and an isothermal point of this ISFET sensor can be obtained if the device operates with an adequate drain-source current. In addition, this invention has other advantages, such as the inexpensive fabrication system, low cost, and mass production characteristics. Based on these characteristics, a disposal sensing device can be achieved. Thus, this invention has a high feasibility in Ion Sensitive Field Effect Transistor.

Abstract: A fastening net for use on a luggage rack of a car has a rope, several fixing elements, hooking elements and a central fixing element. The rope is firstly arranged to have a first “8”, the first “8” being formed diagonally across a predetermined square defining the dimension of the net. Then, a second, a third and a fourth “8”s are formed in a similar way, constituting the major part of the net. The rest of the rope is arranged across the intermediate portions of the “8”s, approaching the center of the net. The fixing elements are each coupled to a respective one of the intersections of all parts of the rope. The hooking elements are fixed to the part of the rope constituting the edge of the net. The central fixing element is connected to the middle portions of all the “8”s for locating the sections of the rope from the center.

Abstract: A hook for a rope includes a vertical inverted U-shaped hook portion and a horizontal base with more than three rings for winding and binding an elastic rope thereon to keep an end of the rope securely enough not to loosen off. The hook may be made with a steel wire bent or formed by means of injecting and shooting process.

Abstract: A ropefastener includes a U-shaped base and a press member. The base has a front bottom and a rear bottom separated by a large opening. An inner lateral side of the front and the rear bottom are formed with a swelled up or down smooth edge so as to give no cutting or hurting function to a rope extending on them, prolonging the service life of the rope and obtaining the real safety of the rope fastener.