Abstract: A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

Abstract: A method for fabricating an array pH sensor and a readout circuit device of such array pH sensor are implemented by utilizing an extended ion sensitive field effect transistor to construct the array pH sensor and related readout circuit. The structure of the array sensor having this extended ion sensitive field effect transistor comprises a tin dioxide/metal/silicon dioxide multi-layer structure sensor and a tin dioxide/indium tin oxide/glass multi-layer structure sensor and has excellent properties. Furthermore, the readout circuit and the sensor utilize two signal generators for controlling and reading signals. In particular, the sensor can be effective for increasing the accuracy of measurement and reducing the interference of noise.

Abstract: A process for fabricating a whole solid-state pH sensing device by using the polypyrrole as the contrast pH detector and a whole solid-state pH sensing device fabricated by the process are disclosed, wherein said device is a differential pair framework potential electrochemical sensing device fabricated by using a non-insulating solid-state inorganic ion-sensing membrane and a polypyrrole sensing membrane. The largest difference between the device of the present invention and the conventional potentiometric type pH sensor is that the sensor of the invention is a solid-state planar sensor. The differential pair framework uses tin dioxide as the ion-sensing membrane and the reference electrode, and uses a polypyrrole sensor as the differential sensor, wherein the sensitivity of tin dioxide is good and has a value up to 57 mV/pH, and the sensitivity of polypyrrole is about 27 mV/pH.

Abstract: An alkaloid sensor, systems comprising the same, and measurement using the systems. The alkaloid sensor has an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a tin oxide film on the substrate, and a alkaloid acylase film immobilized on the tin oxide film, and a conductive wire connecting the MOSFET and the sensing unit.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: A method for fabricating a monolithic chip including multi-sensors that can detect pH, temperature, photo-intensity simultaneously and a readout circuit. As such, as well as the multi-sensors, the readout circuit also has a reduced chip area at low cost since selection switches are used to sequentially read pH, temperature and photo-intensity detecting values, wherein the readout action is completed within a clock cycle. The entire structure is fabricated with standard 0.5 ?m CMOS IC, Double Poly Double Metal (DPDM), n-well technology and allows the integration of the on-chip signal conditioning circuitry. The chip fabricated by the method can not only sense the Ph, temperature, photo values but also apply the extended gate field effect transistor (EGFET) on the temperature and light compensation to produce realistic pH values.

Abstract: An adaptable pin assembly for a BGA based IC encapsulation is disclosed. The pin assembly comprises has an upper cover including a plurality of longitudinal channels arranged in rows and columns for anchoring portions of a plurality of longitudinal, conductive, detachable, and resilient pins; and a lower cover coupled to the upper cover. The lower cover includes a plurality of longitudinal channels arranged in rows and columns for anchoring the remaining portions of the pins. In testing an encapsulated IC chip the pin assembly is sandwiched between the IC chip having a plurality of bottom tin balls and a circuit board of an IC test device, the tin balls are rested on the upper pins, and the circuit board is connected to the lower pins so as to form an electrical connection between the tin balls and the circuit board.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: An adaptable pin assembly for a BGA based IC encapsulation is disclosed. The pin assembly comprises has an upper cover including a plurality of longitudinal channels arranged in rows and columns for anchoring portions of a plurality of longitudinal, conductive, detachable, and resilient pins; and a lower cover coupled to the upper cover, The lower cover includes a plurality of longitudinal channels arranged in rows and columns for anchoring the remaining portions of the pins. In testing an encapsulated IC chip the pin assembly is sandwiched between the IC chip having a plurality of bottom tin balls and a circuit board of an IC test device, the tin balls are rested on the upper pins, and the circuit board is connected to the lower pins so as to form an electrical connection between the tin balls and the circuit board.

Abstract: A magazine includes a feeding tray adapted to be secured to a powered nail-driving tool and to accommodate stacked layers of nails, a gate member slidably disposed on the feeding tray to urge the lowermost layer of nails toward the tool, a nail-supplying member disposed over the feeding tray and having a stacking opening which is communicated with the feeding tray and which receives the layers of nails, and a separating member interposed between the nail-supplying member and the gate member. The separating member is coupled to the gate member so as to be movable therewith away from the stacking opening in a retracting course of the gate member for loading of the nails into the feeding tray, and to be moved underneath the stacking opening in an advancing course of the gate member.

Abstract: A biosensor, a method of fabricating the sensing unit for the biosensor, and a measuring system comprising the biosensor. The biosensor has an extended gate field effect transistor (EGFET) structure and comprises a metal oxide semiconductor field effect transistor (MOSFET) on a semiconductor substrate, a sensing unit comprising a substrate, a silicon dioxide layer on the substrate, a tin oxide layer on the silicon dioxide layer, and a urease layer immobilized on the tin oxide layer, and a conductive wire connecting the MOSFET and the sensing unit.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: A SnO2 ISFET device and manufacturing method thereof. The present invention prepares SnO2 as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2 ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2 ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2 ISFET for different pH and hysteresis width of the SnO2 ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2 ISFET.

Abstract: A portable pH detector. A pH-ISFET is immersed into a solution, and the gate voltage of the pH-ISFET is detected by a signal detection unit. The level of the detected voltage is adjusted by a gain control and level shift unit and is converted by an A/D converter circuit and then output to a 8051 microcontroller to compute the pH of the solution, with the computed result displayed on a LCD.