Abstract: A thermal enhanced ball grid array package is provided. The substrate for the package includes a metal core layer and at least a first patterned wiring layer provided thereon. A first insulating layer is provided between the first patterned wiring layer and the metal core layer. At least a second patterned wiring layer is provided on the substrate, opposite to the surface having the first patterned wiring layer. A second insulating layer having solder balls between the second patterned wiring layer and the metal core layer. The second patterned wiring layer is electrically connected to the first patterned wiring layer. Blind vias are provided in the second patterned wiring layer and the second insulating layer. A heat conductive material or solder material is filled into the blind vias to form thermal balls. The heat from the chip to the metal core layer is transferred directly through the thermal balls.

Abstract: A circuit for synthesizing, from a first signal having a first frequency, a second signal having a second frequency. This synthesis includes using a delay locked loop in combination with a minimal amount of logic circuitry to generate a synthesized output signal which is completely deterministic and does not require any analog control.

Abstract: A method and apparatus for recovering timing information from a ternary signal includes transforming a ternary signal into a binary signal while retaining the necessary timing information. A two facet circuit initially receives a ternary signal, one that includes three levels of values. A first facet of this circuit transforms the ternary signal into two binary signals, each having one of the three levels represented by one value and both having the same level represented by the other value. The second facet of this circuit combines the two binary signals to produce a third binary signal that has one value representing one level and another value representing the two other levels.

Abstract: A semiconductor protection circuit comprises a semiconductor substrate of a first conductivity type; a first region of the first conductivity type formed in the substrate at a surface thereof and having a relatively different degree of conductivity from the substrate; a region of a second conductivity type formed in the first region of the first conductivity type; and a second region of the first conductivity type formed partly in each of the semiconductor substrate and the first region of the first conductivity type so as to bridge a junction therebetween.