Abstract: An electromagnetic touch device and an electromagnetic touch screen are provided. The electromagnetic touch device includes the electromagnetic touch screen. The electromagnetic touch screen is coupled with a stylus. The electromagnetic touch screen includes transmitting coils and receiving coils. The transmitting coils are correspondingly arranged in a peripheral area around the receiving coils. During interaction between the stylus and the electromagnetic touch screen, the transmitting coils transmit transmitting signals to generate a first magnetic field through which the stylus is charged. When a touch operation is performed, the receiving coils generate receiving signals according to a second magnetic field generated by the stylus, a touch point of the stylus is obtained according to the receiving signals.

Abstract: A method of independently changing a melt rheology property value of a bimodal polyethylene polymer being made using a bimodal catalyst system in a single gas phase polymerization reactor. The method comprises process conditions comprising alkane(s) in the reactor. The method comprises a bimodal catalyst system that is characterized by an inverse response to alkane(s) concentration. The method comprises changing concentration of the alkane(s) in the reactor by an amount sufficient to effect a measurable change in the melt rheology property value; wherein the bimodal catalyst system is characterized by an inverse response to alkane(s) concentration such that when the alkane(s) concentration is increased, the melt rheology property value of the resulting bimodal polyethylene polymer is decreased, and when the alkane(s) concentration is decreased, the melt rheology property value of the resulting bimodal polyethylene polymer is increased.

Abstract: The present disclosure provides a radio frequency thimble for production testing, in engagement connection with a test socket. The radio frequency thimble comprises: a housing, a probe, a light transmission member, and a color recognition sensor. The probe is located in a cavity of the housing. An accommodation hole is provided in the probe. The light transmission member is installed in the accommodation hole. A first end of the light transmission member is exposed at an end portion of the probe. A second end of the light transmission member is connected to the color recognition sensor. The light transmission member is used to transmit, to the color recognition sensor, light reflected by a reflective surface near the end portion of the probe. The color recognition sensor is used to recognize the color of the reflected light and determine whether the end portion of the probe is aligned with a terminal.

Abstract: A device for separating and recovering flat-plate catalyst powder and a method for determining a wear ratio are provided. The device includes a powder separation unit and a powder recovery unit, a powder accumulation bin is respectively connected with a shell and a catalyst powder outlet, a cyclone outlet is configured on an inner side of a recovery shell, and a primary filter and a secondary filter are configured on an inner side wall of the recovery shell.

Abstract: The methods, compositions, and kits of the disclosure provide a novel approach for a whole genome, unbiased DNA analysis method that can be performed on limited amounts of DNA. can be used to analyze DNA to determine its modification status. Aspects of the disclosure relate to a method for amplifying bisulfite-treated deoxyribonucleic acid (DNA) molecules comprising: (a) ligating an adaptor to the DNA molecules, wherein the adaptor comprises a RNA polymerase promoter comprising bisulfite-protected cytosines; (b) treating the ligated DNA molecules with bisulfite; (c) hybridizing the bisulfite-treated DNA molecules with a primer; (d) extending the hybridized primer to make double stranded DNA; and (e) in vitro transcribing the double-stranded DNA to make RNA.

Abstract: Systems, methods, and apparatus are provided for monitoring and improving one or more acoustic parameters in single- and multi-zone habitable environments. The acoustic monitoring system includes a built structure, a central control circuit, an acoustic control system, an environment database, an electronic user device, and acoustic sensor arrays which are installed within the built structure. To facilitate the sensor installation process, the built structure may be delineated into one or more zones. The central control circuit may be configured to instruct the installation of acoustic sensor arrays in particular zones within the built structure to obtain improved or even optimal or near optimal acoustic sensor array placement.

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a gate electrode, a first and a second field plates, and a first dielectric layer. The first field plate is disposed above the second nitride-based semiconductor layer. The second field plate is discontinuous and disposed above the second nitride-based semiconductor layer and in a position higher than the first field plate. The second field plate includes one or more enclosed discontinuities in a discontinuity region thereof. The first dielectric layer is disposed above the second field plate. The first dielectric layer covers and penetrates the second discontinuous field plate in the discontinuity region such that the second field plate encloses at least one portion of the first dielectric layer within its one or more enclosed discontinuities.

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a first p-type doped nitride-based semiconductor layer, a first and a second electrodes. The first p-type doped nitride-based semiconductor layer is disposed above the second nitride-based semiconductor layer and has a bottom surface in contact with the second nitride-based semiconductor layer. The first p-type doped nitride-based semiconductor layer has a hydrogen concentration which decrementally decreases along a direction pointing from the bottom surface toward a top surface of the first p-type doped nitride-based semiconductor layer. The first electrode is disposed on the first p-type doped nitride-based semiconductor layer and in contact with the top surface of the first p-type doped nitride-based semiconductor layer. The second electrode is disposed above the second nitride-based semiconductor layer to define a drift region.

Abstract: The present invention is directed to a transgenic plant and a method for producing the same. In particular, the present invention is directed to a transgenic plant or a plant cell in which a nucleic acid molecule encoding an m6A demethylase is introduced, wherein said m6A demethylase has the following two domains: i) N-terminal domain (NTD) having the function of AlkB oxidation demethylase; and ii) C-terminal domain (CTD). The present invention is also directed to a method for producing said plant, comprising introducing a nucleic acid molecule encoding an m6A demethylase into a regenarable plant cell, and regenerating a transgenic plant from the regenerable plant cell.

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. A first nitride-based semiconductor layer is disposed over the buffer. A shield layer is disposed between the buffer and the first nitride-based semiconductor layer and includes a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, in which the first isolation compound is made of at least one two-dimensional material which includes at least one metal element. A second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The pair of S/D electrodes and the gate electrode are disposed over the second nitride-based semiconductor layer.

Abstract: A nitride-based semiconductor device includes a first and a second nitride-based semiconductor layers, a doped III-V semiconductor layer, a gate, a source electrode, and a drain electrode. The doped III-V semiconductor layer is disposed over the second nitride-based semiconductor layer and has opposite first sidewalls which recessed inward toward a body of the doped III-V semiconductor layer between the sidewalls to make a curved profile located at a bottom of the doped III-V semiconductor layer. The gate electrode is disposed above the doped III-V semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is located between the source and drain electrodes.

Abstract: A semiconductor device includes a first and a second nitride-based semiconductor layers, a doped nitride-based semiconductor layer, a plurality of negatively-charged ions, a source electrode, and a drain electrode. The negatively-charged ions are selected from a highly electronegative group and distributed within a plurality of depletion regions which extend downward from the doped nitride-based semiconductor layer and are located beneath the gate electrode. Any pair of the adjacent depletion regions are separated from each other. The source electrode is disposed above the second nitride-based semiconductor layer and spaced apart from the depletion regions. The drain electrode is disposed above the second nitride-based semiconductor layer and spaced apart from the depletion regions.

Abstract: A nitride-based semiconductor circuit includes a nitride-based semiconductor carrier, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, connectors, a connection line, and a power supply line. The first nitride-based semiconductor layer is disposed over the nitride-based semiconductor carrier. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The connectors are disposed on the second nitride-based semiconductor layer. The connection line electrically connects to one of the connectors. The power supply line electrically to the nitride-based semiconductor carrier. A heterojunction is formed between the first and the second nitride-based semiconductor layers. A potential difference is applied between the power supply line and the connection line.

Abstract: The methods, compositions, and kits of the disclosure provide a novel approach for a whole genome, unbiased DNA analysis method that can be performed on limited amounts of DNA. can be used to analyze DNA to determine its modification status. Aspects of the disclosure relate to a method for amplifying bisulfite-treated deoxyribonucleic acid (DNA) molecules comprising: (a) ligating an adaptor to the DNA molecules, wherein the adaptor comprises a RNA polymerase promoter comprising bisulfite-protected cytosines; (b) treating the ligated DNA molecules with bisulfite; (c) hybridizing the bisulfite-treated DNA molecules with a primer; (d) extending the hybridized primer to make double stranded DNA; and (e) in vitro transcribing the double-stranded DNA to make RNA.

Abstract: Some embodiments of the disclosure provide a semiconductor device. The semiconductor device includes: a doped substrate; a barrier layer, disposed on the doped substrate; a channel layer, disposed between the doped substrate and the barrier layer; and a doped semiconductor structure, disposed in the doped substrate, where a band gap of the barrier layer is greater than a band gap of the channel layer, and the doped substrate and the doped semiconductor structure have different polarities.

Abstract: The present invention is directed to a transgenic plant and a method for producing the same. In particular, the present invention is directed to a transgenic plant or a plant cell in which a nucleic acid molecule encoding an m6A demethylase is introduced, wherein said m6A demethylase has the following two domains: i) N-terminal domain (NTD) having the function of AlkB oxidation demethylase; and ii) C-terminal domain (CTD). The present invention is also directed to a method for producing said plant, comprising introducing a nucleic acid molecule encoding an m6A demethylase into a regenarable plant cell, and regenerating a transgenic plant from the regenerable plant cell.

Abstract: A traffic monitoring terminal and a traffic monitoring system are provided. The traffic monitoring terminal includes a camera module configured to acquire a traffic image of an intersection and a control module configured to acquire a number of vehicles waiting at the intersection based on the traffic image.

Abstract: A bimodal ethylene-co-1-butene copolymer consisting essentially of a higher molecular weight component and a lower molecular weight component and, when in melted form at 190 degrees Celsius, is characterized by a unique melt property space defined by a combination of high-load melt index, melt flow ratio, and melt elasticity properties. A (blown) film consisting essentially of the bimodal ethylene-co-1-butene copolymer and having improved properties. Methods of synthesizing the bimodal ethylene-co-1-butene copolymer and making the blown film. A manufactured article comprising the bimodal ethylene-co-1-butene copolymer.

Abstract: Systems, methods, and apparatus are provided for monitoring and improving air quality in single- and multi-zone indoor spaces. The system for monitoring and improving air quality includes a built structure that includes an indoor space with environmentally-controllable zones, an environmental control system, sensor arrays positioned within the environmentally-controllable zones, and a control circuit configured to monitor air and remediate air within the indoor space. Multiple zones in the indoor space may be bundled together in multiple remediation bundled-areas for remediation by separate air handling systems and/or processes. Additionally, multiple zones may be delineated within the indoor space for sensor installation processes.

Abstract: An oscillation device and an electronic device are provided. The oscillation device is applied to the electronic device. The electronic device includes a fan. The oscillation device includes a detection module, an oscillation module, a variable capacitance module, and a control module. The control module is electrically coupled with the detection module, the variable capacitance module, and the oscillation module. The control module is configured to determine a capacitance adjustment parameter according to a preset correspondence, and a temperature of the electronic device and/or a rotational speed of the fan, where the preset correspondence includes a correspondence between capacitance adjustment parameters and temperatures of the electronic device and/or rotational speeds of the fan. The control module is configured to adjust a capacitance of the variable capacitance module according to the capacitance adjustment parameter.