Abstract: Methods, compositions and kits are provided to amplify an amount of genomic methylated DNA that can be subsequently analyzed and/or sequenced. It has particular use with small amounts of DNA, including, but not limited to cell free DNA samples. In some embodiments, the ratio of polymerase and methyltransferase is controlled in order to provide maximum yields. In some embodiments, a dual primase/polymerase is used.

Abstract: A power amplifier circuit includes a power amplifier unit and a broadband improvement unit. The power amplifier unit includes a signal input port, a signal output port, a power transistor, and a first inductor. The power transistor is configured to perform power amplification on radio frequency signals in a plurality of frequency bands. The broadband improvement unit adjusts a parallel resonance frequency of the power amplifier unit, to reduce envelope impedance of the power amplifier unit between a first target frequency and a second target frequency. The first target frequency is a maximum frequency difference between the plurality of frequency bands, and the second target frequency is a minimum frequency difference between the plurality of frequency bands.

Abstract: Aspects of the present disclosure are directed to methods, compositions, and kits for detection and analysis of DNA and RNA cytosine methylation. Certain aspects include methods, compositions and kits useful in bisulfite sequencing of methylated nucleic acids, including methylated nucleic acids from low-input samples such as cell-free DNA and cell-free RNA. Also disclosed are methods and compositions for detection and quantification of 5-hydroxymethylcytosine in DNA.

Abstract: The current disclosure relates to methods, compositions and kits for detecting modified adenosine in a target RNA molecule. Aspects relate to a method for detecting modified adenosine in a target ribonucleic acid (RNA) comprising contacting the target RNA with an adenosine deaminase enzyme (adenosine deaminase, RNA-specific) to generate a target RNA with deaminated adenosines and sequencing the target RNA with deaminated adenosines; wherein the modified adenosine is detected when the nucleotide sequence includes adenosine within a m6A motif.

Abstract: A device for separating and recovering flat-plate catalyst powder and a method for determining a wear ratio are provided. The device includes a powder separation unit and a powder recovery unit, a powder accumulation bin is respectively connected with a shell and a catalyst powder outlet, a cyclone outlet is configured on an inner side of a recovery shell, and a primary filter and a secondary filter are configured on an inner side wall of the recovery shell.

Abstract: Methods, compositions and kits are provided to amplify an amount of genomic methylated DNA that can be subsequently analyzed and/or sequenced. It has particular use with small amounts of DNA, including, but not limited to cell free DNA samples. In some embodiments, the ratio of polymerase and methyltransferase is controlled in order to provide maximum yields. In some embodiments, a dual primase/polymerase is used.

Abstract: A rate control device includes a confidence calculation circuit, a blend calculation circuit and a bit distribution circuit. The confidence calculation circuit calculates a texture confidence, a person confidence and a motion confidence according to an image. The blend calculation circuit determines, according to a mode selection signal, whether to select one of the person confidence and the motion confidence for blend calculation with the texture confidence to generate a blend parameter. The bit distribution circuit generates a bit distribution parameter according to the blend parameter.

Abstract: This disclosure relates to uses of inhibitors of YTH family proteins in the management of fragile X syndrome, fragile X-associated disorders, cognitive disorders, developmental disorders, or central nervous system (CNS) disorders. In certain embodiments, this disclosure relates to treating fragile X syndrome, fragile X-associated disorders, cognitive disorders, developmental disorders, or central nervous system (CNS) disorders by administering an effective amount of an inhibitor of YTHDF1 to a subject in need thereof. In certain embodiments, the YTHDF1 inhibitor is a small molecule inhibitor such as salvianolic acid C, derivatives, prodrugs, esters, or salts thereof.

Abstract: A vibration damping loudspeaker includes a sound-generating unit, a magnetic member, an assembly-auxiliary frame and dampers. Aligning units of the assembly-auxiliary frame are coupled to positioning units of the sound-generating unit. The dampers are symmetrically disposed between the magnetic member and the assembly-auxiliary frame. The sound-generating unit and the magnetic member can be quickly and easily mounted in place because of the assembly-auxiliary frame to not only enhance the production yield of the vibration damping loudspeaker but also allow the dampers to function as a buffer between the sound-generating unit and the magnetic member, so as to achieve vibration damping and vibration isolation during the operation of the vibration damping loudspeaker to spare users the discomfort they will otherwise experience for using electronic devices.

Abstract: A method of independently changing a melt rheology property value of a bimodal polyethylene polymer being made using a bimodal catalyst system in a single gas phase polymerization reactor. The method comprises process conditions comprising alkane(s) in the reactor. The method comprises a bimodal catalyst system that is characterized by an inverse response to alkane(s) concentration. The method comprises changing concentration of the alkane(s) in the reactor by an amount sufficient to effect a measurable change in the melt rheology property value; wherein the bimodal catalyst system is characterized by an inverse response to alkane(s) concentration such that when the alkane(s) concentration is increased, the melt rheology property value of the resulting bimodal polyethylene polymer is decreased, and when the alkane(s) concentration is decreased, the melt rheology property value of the resulting bimodal polyethylene polymer is increased.

Abstract: A nitride-based semiconductor device includes a substrate, a buffer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a S/D electrode, a second S/D electrode, and a gate electrode. The buffer is disposed over the substrate and includes at least one layer of a nitride-based semiconductor compound doped with an acceptor at a top-most portion of the buffer. The first and second nitride-based semiconductor layers are disposed over the buffer. The first S/D electrode is disposed over the second nitride-based semiconductor layer, in which the first S/D electrode extends downward to a position lower than the first nitride-based semiconductor layer, so as to form at least one first interface with the top-most portion of the buffer, making contact with the at least one layer of the nitride-based semiconductor compound. The second S/D electrode and the gate electrode are disposed over the second nitride-based semiconductor layer.

Abstract: The disclosure is directed to universal hairpin primer (UHP) nucleic acid molecules for quantifying RNA, including mature microRNA (miRNA), messenger RNA (mRNA), and long noncoding RNA (lncRNA), as well as systems and methods for using same. The UHP nucleic acid molecules comprise a stem-loop structure and a degenerate nucleic acid sequence of 2-10 (e.g., 2-6) nucleotides at the 3? end, wherein the degenerate nucleic acid sequence hybridizes to the 3?-end of an RNA molecule. The RNA quantification analysis can be carried out by using either the conventional SYBR Green system or the cost-effective universal TaqMan probe-based RT-qPCR system.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode a first strain-compensating layer, and a first protection layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is disposed between the source and drain electrodes. The first strain-compensating layer is disposed above the second nitride-based semiconductor layer and between the drain and gate electrodes.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode, and a third nitride-based semiconductor layer. The first nitride-based semiconductor layer has at least one trench. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and spaced apart from the trench. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is disposed above the second nitride-based semiconductor layer and between the source and drain electrodes, so as to at least define a drift region between the gate electrode and the drain electrode and overlaps with the trench. The third nitride-based semiconductor layer is at least disposed in the trench and extends upward from the trench to make contact with the second nitride-based semiconductor layer.

Abstract: The present invention is directed to a transgenic plant and a method for producing the same. In particular, the present invention is directed to a transgenic plant or a plant cell in which a nucleic acid molecule encoding an m6A demethylase is introduced, wherein said m6A demethylase has the following two domains: i) N-terminal domain (NTD) having the function of AlkB oxidation demethylase; and ii) C-terminal domain (CTD). The present invention is also directed to a method for producing said plant, comprising introducing a nucleic acid molecule encoding an m6A demethylase into a regenarable plant cell, and regenerating a transgenic plant from the regenerable plant cell.

Abstract: A semiconductor device includes a doped substrate, a barrier layer, a channel layer, a doped semiconductor structure, and the conductive structure. The barrier layer is disposed on the doped substrate. The channel layer is disposed between the doped substrate and the barrier layer, in which a bandgap of the barrier layer is greater than a bandgap of the channel layer. The doped semiconductor structure is embedded in the doped substrate, in which the doped substrate and the doped semiconductor structure have different polarities, so as to form a diode therebetween. The conductive structure is disposed over the doped substrate and makes contact with the doped semiconductor structure, in which the conductive structure extends from the doped semiconductor structure to a position higher than the channel layer and the barrier layer.

Abstract: A semiconductor device includes a doped substrate, a barrier layer, a channel layer, and a doped semiconductor structure. The barrier layer is disposed on the doped substrate. The channel layer is disposed between the doped substrate and the barrier layer, in which a bandgap of the barrier layer is greater than a bandgap of the channel layer. The doped semiconductor structure is embedded in the doped substrate and at a position lower than the channel layer, in which the doped substrate and the doped semiconductor structure have different polarities, so as to form a diode therebetween.

Abstract: A device and method for simulating dynamics of hydrocarbon generation and expulsion in geological process is provided. The device contains a reaction system which has a reactor having a sample chamber formed therein for placing a sample and a sample sleeve being arranged within the sample chamber for receiving the sample. The sample sleeve has a cylindrical body enclosing the sample in a circumferential direction, an outer side wall of the cylindrical body being in engagement with an inner side wall of the reactor, and the cylindrical body being perforated to form a channel for product circulation between an outer side wall of the sample and the inner side wall of the reactor.

Abstract: A method for steering wheel touch detection is disclosed. The steering wheel is partitioned into at least one touch detection region and each touch detection region includes at least one touch detection sensor that is provided with a touch detection channel. For each touch detection channel, the method includes configuring a reference load with a preset capacitance value and reference resistance value, measuring a capacitance value and resistance value of the reference load, and determining from the reference and measured capacitance and resistance values whether the operation of the touch detection channel is normal. If the operation of the touch detection channel is normal, the touch detection channel is used to perform touch detection of the steering wheel based on measured resistance and capacitance.

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, a pair of S/D electrodes, and a gate electrode. The first nitride-based semiconductor layer is disposed over the buffer and forms a first interface with the buffer. The shield layer includes a first isolation compound and is interposed between the buffer and the first nitride-based semiconductor layer. The first isolation compound has a bandgap greater than a bandgap of the buffer and greater than a bandgap of the first nitride-based semiconductor layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The S/D electrodes and a gate electrode are disposed over the second nitride-based semiconductor layer.