Abstract: Systems, methods, and apparatus are provided for monitoring and improving air quality in single- and multi-zone indoor spaces. The system for monitoring and improving air quality includes a built structure that includes an indoor space with environmentally-controllable zones, an environmental control system, sensor arrays positioned within the environmentally-controllable zones, and a control circuit configured to monitor air and remediate air within the indoor space. Multiple zones in the indoor space may be bundled together in multiple remediation bundled-areas for remediation by separate air handling systems and/or processes. Additionally, multiple zones may be delineated within the indoor space for sensor installation processes.

Abstract: An oscillation device and an electronic device are provided. The oscillation device is applied to the electronic device. The electronic device includes a fan. The oscillation device includes a detection module, an oscillation module, a variable capacitance module, and a control module. The control module is electrically coupled with the detection module, the variable capacitance module, and the oscillation module. The control module is configured to determine a capacitance adjustment parameter according to a preset correspondence, and a temperature of the electronic device and/or a rotational speed of the fan, where the preset correspondence includes a correspondence between capacitance adjustment parameters and temperatures of the electronic device and/or rotational speeds of the fan. The control module is configured to adjust a capacitance of the variable capacitance module according to the capacitance adjustment parameter.

Abstract: Systems, methods, and apparatus are provided for monitoring and improving air quality in single- and multi-zone indoor spaces. The system for monitoring and improving air quality includes a built structure that includes an indoor space with environmentally-controllable zones, an environmental control system, sensor arrays positioned within the environmentally-controllable zones, and a control circuit configured to monitor air and remediate air within the indoor space. Multiple zones in the indoor space may be bundled together in multiple remediation bundled-areas for remediation by separate air handling systems and/or processes. Additionally, multiple zones may be delineated within the indoor space for sensor installation processes.

Abstract: The present disclosure provides novel materials and methods related to the treatment of cancer. In particular, the present disclosure provides compositions and methods for treating and/or preventing cancer based on the attenuation of Methyltransferase-like Protein 3 (METTL3) activity in a tumor cell. The compositions and methods disclosed herein include the use of a deubiquitinase inhibitor with or without an agent that modulates chromatin state and/or an agent that modulates DNA damage repair.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a gate electrode a first strain-compensating layer, and a first protection layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The gate electrode is disposed between the source and drain electrodes. The first strain-compensating layer is disposed above the second nitride-based semiconductor layer and between the drain and gate electrodes.

Abstract: The disclosure is directed to a gene transfer vector which comprises (i) all or part of a viral genome and (ii) a suicide gene flanked by unique cloning sequences. The disclosure also is directed to a system for producing an adenoviral vector comprising a destination vector comprising (i) all or part of an adenoviral genome and (ii) a suicide gene flanked by unique cloning sequences; a transgene flanked by unique cloning sequences; and (c) reagents for Gibson DNA Assembly (GDA). A method of producing an adenoviral vector using the aforementioned system also is provided.

Abstract: Systems and methods for enhancing wellness in a habitable space are provided. In some forms, an example system for enhancing wellness in a habitable space includes a control system having a processor, communication circuitry, and a memory. The communication circuitry of the control system is configured to communicate with one or more devices positioned within the habitable space. One or more sensors may also be positioned proximate the habitable space to detect indicia (e.g., biometric characteristics of a user, behavioral characteristics of a user, and environmental characteristics) and communicate the detected indicia to the control system. Based at least in part on the detected indicia, the control system is configured to trigger initiation of a scene in the habitable space by communicating a signal to at least one of the devices in the habitable space to adjust operation thereof.

Abstract: The methods, compositions, and kits of the disclosure provide a novel approach for a whole genome, unbiased DNA analysis method that can be performed on limited amounts of DNA. can be used to analyze DNA to determine its modification status. Aspects of the disclosure relate to a method for amplifying bisulfite-treated deoxyribonucleic acid (DNA) molecules comprising: (a) ligating an adaptor to the DNA molecules, wherein the adaptor comprises a RNA polymerase promoter comprising bisulfite-protected cytosines; (b) treating the ligated DNA molecules with bisulfite; (c) hybridizing the bisulfite-treated DNA molecules with a primer; (d) extending the hybridized primer to make double stranded DNA; and (e) in vitro transcribing the double-stranded DNA to make RNA.

Abstract: The present invention is directed to a transgenic plant and a method for producing the same. In particular, the present invention is directed to a transgenic plant or a plant cell in which a nucleic acid molecule encoding an m6A demethylase is introduced, wherein said m6A demethylase has the following two domains: i) N-terminal domain (NTD) having the function of AlkB oxidation demethylase; and ii) C-terminal domain (CTD). The present invention is also directed to a method for producing said plant, comprising introducing a nucleic acid molecule encoding an m6A demethylase into a regenerable plant cell, and regenerating a transgenic plant from the regenerable plant cell.

Abstract: A nitride-based semiconductor device includes a substrate, a buffer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a S/D electrode, a second S/D electrode, and a gate electrode. The buffer is disposed over the substrate and includes at least one layer of a nitride-based semiconductor compound doped with an acceptor at a top-most portion of the buffer. The first and second nitride-based semiconductor layers are disposed over the buffer. The first S/D electrode is disposed over the second nitride-based semiconductor layer, in which the first S/D electrode extends downward to a position lower than the first nitride-based semiconductor layer, so as to form at least one first interface with the top-most portion of the buffer, making contact with the at least one layer of the nitride-based semiconductor compound. The second S/D electrode and the gate electrode are disposed over the second nitride-based semiconductor layer.

Abstract: Aspects of the present disclosure relate to methods for modification and detection of methylated nucleotides. Embodiments are directed to detection of RNA methylation. Disclosed are methods and compositions for transcriptome-wide detection of N6-methyladenosine in mRNA. In some cases, methods for modifying a methylated nitrogenous base are described. Also disclosed are enzymes and other molecules useful for RNA methylation detection.

Abstract: A spray-dried zirconocene catalyst system comprising a zirconocene catalyst and a hydrophobic fumed silica, which supports the zirconocene catalyst. A spray-drying method of making same. Polyolefins; methods of making and using same; and articles containing same.

Abstract: Some embodiments of the disclosure provide a semiconductor device. The semiconductor device includes: a doped substrate; a barrier layer, disposed on the doped substrate; a channel layer, disposed between the doped substrate and the barrier layer; and a doped semiconductor structure, disposed in the doped substrate, where a band gap of the barrier layer is greater than a band gap of the channel layer, the doped substrate and the doped semiconductor structure have different polarities, and the doped substrate includes a doped silicon substrate.

Abstract: The present disclosure provides a radio frequency thimble for production testing, in engagement connection with a test socket. The radio frequency thimble comprises: a housing, a probe, a light transmission member, and a color recognition sensor. The probe is located in a cavity of the housing. An accommodation hole is provided in the probe. The light transmission member is installed in the accommodation hole. A first end of the light transmission member is exposed at an end portion of the probe. A second end of the light transmission member is connected to the color recognition sensor. The light transmission member is used to transmit, to the color recognition sensor, light reflected by a reflective surface near the end portion of the probe. The color recognition sensor is used to recognize the color of the reflected light and determine whether the end portion of the probe is aligned with a terminal.

Abstract: The current disclosure relates to methods, compositions and kits for detecting modified adenosine in a target RNA molecule. Aspects relate to a method for detecting modified adenosine in a target ribonucleic acid (RNA) comprising contacting the target RNA with an adenosine deaminase enzyme (adenosine deaminase, RNA-specific) to generate a target RNA with deaminated adenosines and sequencing the target RNA with deaminated adenosines; wherein the modified adenosine is detected when the nucleotide sequence is adenosine.

Abstract: A semiconductor device includes a doped substrate, a barrier layer, a channel layer, a doped semiconductor structure, and the conductive structure. The barrier layer is disposed on the doped substrate. The channel layer is disposed between the doped substrate and the barrier layer, in which a bandgap of the barrier layer is greater than a bandgap of the channel layer. The doped semiconductor structure is embedded in the doped substrate, in which the doped substrate and the doped semiconductor structure have different polarities, so as to form a diode therebetween. The conductive structure is disposed over the doped substrate and makes contact with the doped semiconductor structure, in which the conductive structure extends from the doped semiconductor structure to a position higher than the channel layer and the barrier layer.

Abstract: A semiconductor device includes a doped substrate, a barrier layer, a channel layer, and a doped semiconductor structure. The barrier layer is disposed on the doped substrate. The channel layer is disposed between the doped substrate and the barrier layer, in which a bandgap of the barrier layer is greater than a bandgap of the channel layer. The doped semiconductor structure is embedded in the doped substrate and at a position lower than the channel layer, in which the doped substrate and the doped semiconductor structure have different polarities, so as to form a diode therebetween.

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a shield layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. A first nitride-based semiconductor layer is disposed over the buffer. A shield layer is disposed between the buffer and the first nitride-based semiconductor layer and includes a first isolation compound that has a bandgap greater than a bandgap of the first nitride-based semiconductor layer, in which the first isolation compound is made of at least one two-dimensional material which includes at least one metal element. A second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap less than the bandgap of the first isolation compound and greater than the bandgap of the first nitride-based semiconductor layer. The pair of S/D electrodes and the gate electrode are disposed over the second nitride-based semiconductor layer.

Abstract: Systems, methods, and apparatus are provided for monitoring and improving one or more acoustic parameters in single- and multi-zone habitable environments. The acoustic monitoring system includes a built structure, a central control circuit, an acoustic control system, an environment database, an electronic user device, and acoustic sensor arrays which are installed within the built structure. To facilitate the sensor installation process, the built structure may be delineated into one or more zones. The central control circuit may be configured to instruct the installation of acoustic sensor arrays in particular zones within the built structure to obtain improved or even optimal or near optimal acoustic sensor array placement.

Abstract: A nitride-based semiconductor device includes a buffer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a gate electrode, a first S/D electrode, and a second S/D electrode. The buffer includes at least one layer of a nitride-based semiconductor compound doped with an acceptor at a top-most portion of the buffer. The first nitride-based semiconductor layer is disposed over the buffer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The gate electrode and the first and second S/D electrodes are disposed over the second nitride-based semiconductor layer. Profiles of the first and second S/D electrodes are asymmetric with respect to the gate electrode, such that a bottom surface of the first S/D electrode is deeper than that of the second S/D electrode with respect to the gate electrode.