Patents by Inventor Chuan Huang

Chuan Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240277865
    Abstract: Disclosed herein is a phage-displayed single-chain variable fragment (scFv) library, which comprises a plurality of phage-displayed scFvs characterized with a specific sequence in each CDR. The present phage-displayed scFv library is useful in selecting an antibody fragment exhibiting a binding affinity and specificity to mesothelin (MSLN). Also disclosed herein are a recombinant antibody specific to MSLN, an immunoconjugate comprising the recombinant antibody, and uses thereof in treating cancers.
    Type: Application
    Filed: June 8, 2022
    Publication date: August 22, 2024
    Inventors: An-Suei YANG, Hung-Ju HSU, Chao-Ping TUNG, Chung-Ming YU, Chi-Yung CHEN, Hong-Sen CHEN, Yu-Chuan HUANG, Pei-Hsun TSAI, Szu-Yu LIN, Hung-Pin PENG
  • Publication number: 20240228421
    Abstract: A composition and a method for preparing the same are provided. The method for preparing the composition includes providing a polyethylene terephthalate waste. The polyethylene terephthalate waste is subjected to a depolymerization in the presence of a catalyst and an alcoholysis agent to obtain a mixture, wherein an oxidizing atmosphere is continuously introduced into the depolymerization. The mixture is subjected to a solid-liquid separation to obtain a solid. The solid is subjected to a purification to obtain the composition.
    Type: Application
    Filed: December 30, 2022
    Publication date: July 11, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Shin-Liang KUO, Yu-Lan TUNG, Wen-Sheng CHANG, Kung-Hsun HUANG, Tein-San LEE, Shu-Chuan HUANG
  • Publication number: 20240228800
    Abstract: A coating material includes a modified particle and a reactive compound. The modified particle includes a core, and a silane coupling agent having an epoxy group (or a double-bond) grafted onto a surface of the core. When the silane coupling agent having the epoxy group is grafted onto the surface of the core, the reactive compound includes a non-silicon multi-epoxy compound and a silicon-containing multi-epoxy compound. When the silane coupling agent having the double-bond is grafted onto the surface of the core, the reactive compound includes a multi double-bond compound.
    Type: Application
    Filed: October 30, 2023
    Publication date: July 11, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsiang-Jui CHEN, Chih-Hao LIN, Yueh-Chuan HUANG
  • Publication number: 20240215207
    Abstract: A cooling system includes a compressor, a condenser, an evaporator, a first one-way valve, and a second one-way valve. The compressor includes a compressor inlet and a compressor outlet. The condenser includes a condenser inlet and a condenser outlet, and the compressor outlet communicates with the condenser inlet. The evaporator includes an evaporator inlet and an evaporator outlet, the condenser outlet communicates with the evaporator inlet, and the evaporator outlet communicates with the compressor inlet and the condenser inlet. The first one-way valve is disposed on a first flow path between the compressor outlet and the condenser inlet. The second one-way valve is disposed on a second flow path between the evaporator outlet and the condenser inlet.
    Type: Application
    Filed: March 2, 2023
    Publication date: June 27, 2024
    Applicant: Giga Computing Technology Co., Ltd.
    Inventors: Jian-Hung Lin, Ching-Chuan Huang, Nobuhiro Adachi
  • Patent number: 11996788
    Abstract: Disclosed is a novel and innovative class of buck-boost bidirectional inverters achieve ultra high efficiency in applications requiring converting of one or more low and variable DC voltages of one or more power sources (which may include a battery, a low-voltage DC source, or a set of PV solar panels) to an AC voltage (e.g., connected to a grid) through a single-stage power conversion with step modulation.
    Type: Grant
    Filed: September 15, 2021
    Date of Patent: May 28, 2024
    Assignee: Redx Technology Australia Pty Ltd
    Inventors: Xue Jian Chen, Jin Chuan Huang
  • Publication number: 20240145338
    Abstract: A heat sink and an electronic device are provided. The electronic device includes a circuit board and a heat sink. The circuit board has a heat source, and the heat sink contacts the heat source to dissipate the heat. The heat sink includes a heat dissipating plate and a cover plate. The heat dissipating plate has an inlet region, an outlet region and a vaporization region between the inlet region and the outlet region. The vaporization region is disposed corresponding to the heat source. The cover plate covers on the heat dissipating plate, and a space between the cover plate and the heat dissipating plate forms a channel with an inlet and an outlet. A cooling liquid flows into the channel from the inlet, is vaporized to a gas while passing through the vaporization region, and the vaporized gas dissipates outside the channel through the outlet.
    Type: Application
    Filed: August 24, 2023
    Publication date: May 2, 2024
    Applicant: Giga Computing Technology Co., Ltd.
    Inventors: Jian-Hung Lin, Ching-Chuan Huang, Nobuhiro Adachi
  • Patent number: 11945885
    Abstract: A vinyl-containing copolymer is copolymerized from (a) first compound, (b) second compound, and (c) third compound. (a) First compound is an aromatic compound having a single vinyl group. (b) Second compound is polybutadiene or polybutadiene-styrene having side vinyl groups. (c) Third compound is an acrylate compound. The vinyl-containing copolymer includes 0.003 mol/g to 0.010 mol/g of benzene ring, 0.0005 mol/g to 0.008 mol/g of vinyl group, and 1.2*10?5 mol/g to 2.4*10?4 mol/g of ester group.
    Type: Grant
    Filed: December 29, 2022
    Date of Patent: April 2, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Cheng-Po Kuo, Shin-Liang Kuo, Shu-Chuan Huang, Yan-Ting Jiang, Jian-Yi Hang, Wen-Sheng Chang
  • Patent number: 11935947
    Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: March 19, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20240057290
    Abstract: A two-phase immersion-cooling system, adapted for accommodating and cooling at least one heat source, includes a container, a pressure vessel, and a vapor compressor, the container includes a liquid-storing area and a vapor area, the liquid-phase coolant is configured for in thermal contact with at least one heat source and to be vaporized into a gas-phase coolant towards the vapor area and mixed with an air and a water vapor in the vapor area into a mixed gas. The pressure vessel is connected to the vapor area via a gas channel, the vapor compressor is disposed on the gas channel and configured to draw the mixed gas in the vapor area so as to decrease pressure of the vapor area and to inject the mixed gas into the pressure vessel so as to increase pressure of the pressure vessel.
    Type: Application
    Filed: October 5, 2022
    Publication date: February 15, 2024
    Applicant: GIGA COMPUTING TECHNOLOGY CO., LTD.
    Inventors: Jian-Hung LIN, Ching-Chuan HUANG, Nobuhiro ADACHI
  • Publication number: 20240057286
    Abstract: A heat dissipation system adapted to dissipate heat for an electronic device includes a tank, a first heat exchanger, and a fluid delivery device. The tank includes a first zone and a second zone. A cooling fluid is located in the first and second zones. The electronic device is adapted to be disposed in the first zone and immersed in the cooling fluid. The first heat exchanger is located at a junction of the first and second zones to reduce a temperature of the cooling fluid. The cooling fluid flows from the first zone to the second zone through the fluid delivery device. The cooling fluid is adapted to flow to the first zone from the second zone after passing through the first heat exchanger, so as to dissipate heat for the electronic device, and then flows to the second zone through the fluid delivery device, such that a cycle is formed.
    Type: Application
    Filed: September 19, 2022
    Publication date: February 15, 2024
    Applicant: Giga Computing Technology Co., Ltd.
    Inventors: Jian-Hung Lin, Chao-Chiang Yang, Chih-Jen Hou, Ching-Chuan Huang, Nobuhiro Adachi
  • Publication number: 20240048072
    Abstract: Disclosed is a novel and innovative class of buck-boost bidirectional inverters achieve ultra high efficiency in applications requiring converting of one or more low and variable DC voltages of one or more power sources (which may include a battery, a low-voltage DC source, or a set of PV solar panels) to an AC voltage (e.g., connected to a grid) through a single-stage power conversion with step modulation.
    Type: Application
    Filed: September 15, 2021
    Publication date: February 8, 2024
    Inventors: Xue Jian CHEN, Jin Chuan HUANG
  • Publication number: 20240014310
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
    Type: Application
    Filed: September 21, 2023
    Publication date: January 11, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Shin-Chuan Huang, Chih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20240006557
    Abstract: An LED circuit board structure includes first color LEDs, second color LEDs, third color LEDs, integrated circuit chips, a carrier board, first P-type pads, first color pads, first testing wires and first connecting wires. One of the first P-type pads is disposed at a pixel-front-side-pattern region for mounting a first P-type electrode. One of the first color pads is disposed at the pixel-front-side-pattern region for mounting a first pin of the integrated circuit chip. The first color pad electrically connects to the first P-type pad. A first testing wire is disposed at the pixel-front-side-pattern region and extends from the first P-type pad or the first color pad. The first connecting wire electrically connects two first testing wires in adjacent two pixel-front-side-pattern regions in parallel.
    Type: Application
    Filed: November 21, 2022
    Publication date: January 4, 2024
    Inventors: Yi-Chuan HUANG, Hsiao-Lu CHEN, Ai-Sen LIU
  • Publication number: 20240008170
    Abstract: An LED circuit board structure includes first color LEDs, second color LEDs, third color LEDs, a carrier board, first testing wires, first connecting wires, second testing wires and second connecting wires. Each of the first testing wire is located at the carrier board and electrically connects two first color LEDs in a pixel-front-side-pattern region in parallel. The first connecting wire electrically connects two first testing wires in adjacent two pixel-front-side-pattern regions. Each of the second testing wire is located at the carrier board and electrically connects two second color LEDs in a pixel-front-side-pattern region in parallel. The second connecting wire electrically connects two second testing wires in adjacent two pixel-front-side-pattern regions.
    Type: Application
    Filed: September 16, 2022
    Publication date: January 4, 2024
    Inventors: Yi-Chuan HUANG, Hsiao-Lu CHEN, Ai-Sen LIU
  • Publication number: 20230408930
    Abstract: In a method of tool matching, aberration maps of two or more optical systems of two or more scanner tools are determined. A photoresist pattern is generated by projecting a first layout pattern by an optical system of each one of the two or more scanner tools on a respective substrate. One or more Zernike coefficients of the two or more optical systems are adjusted based on the determined aberration maps of the two or more optical systems to minimize critical dimension (CD) variations in a first region of the photoresist patterns on each respective substrate.
    Type: Application
    Filed: June 17, 2022
    Publication date: December 21, 2023
    Inventors: Shih-Chuan HUANG, Sheng-Min WANG, Shih-Ming CHANG, Ken-Hsien HSIEH
  • Publication number: 20230378314
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.
    Type: Application
    Filed: July 13, 2023
    Publication date: November 23, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20230369448
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.
    Type: Application
    Filed: July 13, 2023
    Publication date: November 16, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20230369296
    Abstract: A magnetic LED die transferring device includes a substrate, a plurality of magnetic members and a vibrating mechanism. The substrate includes a plurality of die locating areas arranged in intervals, and each of the die locating areas includes a locating surface. Each of the magnetic members corresponds to each of the die locating areas and includes an alignment N-pole and an alignment S-pole. The vibrating mechanism is coupled to the substrate. The N-pole and the S-pole of each of the magnetic LED dice are used to be attracted by each of the alignment N-poles and each of the alignment S-poles, respectively, to allow each of the magnetic LED dice to be transferred and aligned to each of the die locating areas.
    Type: Application
    Filed: March 26, 2023
    Publication date: November 16, 2023
    Inventors: Ai-Sen LIU, Hsiao-Lu CHEN, Yi-Chuan HUANG, Hsiang-An FENG
  • Patent number: 11804544
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.
    Type: Grant
    Filed: January 14, 2022
    Date of Patent: October 31, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shin-Chuan Huang, Chih-Tung Yeh, Chun-Ming Chang, Bo-Rong Chen, Wen-Jung Liao, Chun-Liang Hou
  • Patent number: 11784541
    Abstract: A grounding structure for a motor stator includes a silicon steel sheet unit, and upper and lower insulating frames clamping the silicon steel sheet unit therebetween. The grounding structure further includes a conductive member and a circuit board. The conductive member is clamped between the silicon steel sheet unit and the lower insulating frame, and protruding from a lower end of the lower insulating frame. The circuit board is disposed at a lower side of the lower insulating frame, and includes a negative contact that is connected to a lower edge of the conductive member.
    Type: Grant
    Filed: April 1, 2022
    Date of Patent: October 10, 2023
    Assignee: YEN SUN TECHNOLOGY CORP.
    Inventors: Graham Chen, Chih-Tsung Hsu, Hsin-Hsien Wu, Chin-Hui Pan, Yu-Chuan Huang