Abstract: A voltage balance circuit includes a battery module connected to an external power source, a voltage dividing module, a detection module and a control module. The battery module includes a plurality of batteries connected in series. The voltage dividing module includes a plurality of bleeder resistors. Each bleeder resistor is connected with one battery in parallel. The detection module includes a plurality of thermistors, fixation resistances and micro-controllers. Each thermistor is arranged beside one bleeder resistor. Each thermistor is connected with one fixation resistance in series. Each micro-controller is connected with one thermistor and the one fixation resistance. The control module includes a plurality of switches and an analog front end component. Each switch is connected with the one bleeder resistor in series. Each switch is connected to the analog front end component, and the analog front end component is connected to the one micro-controller.

Abstract: A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

Abstract: A heating device includes a first capacitor, a first switch, a second switch, a second capacitor, a third capacitor, a coil and a controller. The first and second switch are coupled in series at a first node, and are coupled with the first capacitor in parallel. The second capacitor is coupled to the first switch. The third capacitor is coupled to the second switch, and is coupled to the second capacitor at a second node. The coil is coupled between the first and the second node. The controller outputs a first and a second control signal to the first switch and the second switch, respectively. After the heating device received a voltage and a starting command, the controller outputs the first and the second control signal to turn on or off the first and the second switch respectively. The duty cycle of the first signal is lower than 50%.

Abstract: A device comprises a source/drain contact over a source/drain region of a transistor, an etch stop layer above the source/drain contact, an interlayer dielectric (ILD) layer above the etch stop layer, and a source/drain via extending through the ILD layer and the etch stop layer to the source/drain contact. The etch stop layer has an oxidized region in contact with the source/drain via and separated from the source/drain contact.

Abstract: A method for adjusting a transmitting (TX) power ratio of a radio module includes: mapping a radiofrequency (RF) exposure limit to a TX power limit; interacting with at least one other radio module for adjusting the TX power ratio, to obtain an adjusted TX power ratio; and adjusting the TX power limit according to the adjusted TX power ratio, to generate an adjusted TX power limit of the radio module.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. The first conductive via structure has a first substantially strip shape in a top view of the first conductive via structure.

Abstract: A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.

Abstract: Disclosed are methods and the non-transitory computer storage media of extracting linguistic patterns and summarizing a pathology report thereof. The present disclosure provides a method of extracting key linguistic patterns from a pathology report. The method comprises: determining a confidence degree and a support degree between a linguistic term and a next linguistic term based on co-occurrences of the linguistic term and the next linguistic term; generating a set of candidate linguistic terms; generating a first set of linguistic patterns through performing random walks on the set of candidate linguistic terms; and determining the key linguistic patterns through removing redundant linguistic patterns from the first set of linguistic patterns.

Abstract: The present invention provides methods of treating arthritis. A sustained release composition comprising liposomes and one or more therapeutic agent or a pharmaceutically acceptable salt thereof is administered to a subject in need thereof. The liposomes may be in an aqueous suspension. The sustained release composition can be administered intraarticularly.

Abstract: An optical driving mechanism is provided, for driving an optical element, including: a fixed portion, a movable portion, a driving assembly and a position sensing assembly. The movable portion is movably connected to the fixed portion and includes a holder for sustaining the optical element. The driving assembly is configured to drive the movable portion to move relative to the fixed portion. The position sensing assembly is configured to sense a distance of the movable portion relative to the fixed portion, the position sensing assembly includes a sensing magnetic element and a sensor, wherein the sensing magnetic element is disposed on the movable portion and has a rectangular structure. A direction of a long axis of the rectangular structure extends in a direction that is perpendicular to the optical axis of the optical element, and the direction of the long axis is different from the optical axis direction.

Abstract: A semiconductor isolation structure includes a silicon-on-insulator wafer, a first deep trench isolation structure and a second deep trench isolation structure. The silicon-on-insulator wafer includes a semiconductor substrate, a buried insulation layer disposed on the semiconductor substrate, and a semiconductor layer disposed on the buried insulation layer. The semiconductor layer has a functional region. The first deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional region. The second deep trench isolation structure penetrates semiconductor layer and the buried insulation layer, and surrounds the first deep trench isolation structure.

Abstract: A driving assistant method applied to a first moving vehicle is provided. The method includes capturing an image of a license plate of a second moving vehicle when the first moving vehicle is moving, and identifying a first area of the license plate in the captured image. Basic information of the second moving vehicle are obtained according to a size of the first area. Once a safe distance is determined according to driving information of the first moving vehicle and the basic information of the second moving vehicle, a warning message is transmitted when the distance between the first moving vehicle and the second moving vehicle is less than the safe distance.

Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: A power detection circuit is provided for detecting current total input power of a resonant circuit. The power detection circuit includes a detection circuit and an estimation circuit. The detection circuit receives a current signal and obtains resonant-slot baseband power according to the current signal to generate the baseband power value. The current signal represents a resonant-slot current generated by the resonant circuit. The estimation circuit receives the baseband power value and estimates the current total input power according to the baseband power value to generate an estimated power value.

Abstract: Deep trench isolation structures for high voltage semiconductor-on-insulator devices are disclosed herein. An exemplary deep trench isolation structure surrounds an active region of a semiconductor-on-insulator substrate. The deep trench isolation structure includes a first insulator sidewall spacer, a second insulator sidewall spacer, and a multilayer silicon-comprising isolation structure disposed between the first insulator sidewall spacer and the second insulator sidewall spacer. The multilayer silicon-comprising isolation structure includes a top polysilicon portion disposed over a bottom silicon portion. The bottom polysilicon portion is formed by a selective deposition process, while the top polysilicon portion is formed by a non-selective deposition process. In some embodiments, the bottom silicon portion is doped with boron.

Abstract: Battery cell grouping solutions are disclosed for assembling traction battery packs that include cell-to-pack battery systems. A cell grouping assembly may be utilized to establish a common datum reference plane relative to multiple groupings of battery cells. An exemplary assembly method may include positioning the groupings of battery cells relative to the cell grouping assembly, and then applying a compressive force to the groupings of battery cells to provide cell stacks of the cell-to-pack battery system. The grouped cell stacks may then be located to an enclosure tray of the traction battery pack.

Abstract: Traction battery packs are disclosed that include battery systems. A cell stack/cell matrix of the battery system may be positioned within an enclosure tray of the traction battery pack. A wedge insert may be positioned at an interface between the cell stack/cell matrix and a side wall of the enclosure tray. The side wall may include a draft angle. The wedge insert may be configured to translate the draft angle in order to apply a compressive load in a direction that is substantially normal to the cell stack/cell matrix.

Abstract: An ophthalmic drug delivery system that contains phospholipid and cholesterol for prolonging drug lifetime in the eyes.

Abstract: A method for labeling object of operating system is adapted to a target object of a target operating system, wherein the target object has a target attribute. The method comprises: generating a default label by a labeling tool according to the target attribute; obtaining a reference object of a reference operating system, wherein the reference object has a reference attribute and a reference label; comparing whether the target attribute and the reference attribute are identical and generating a comparison result; and labeling the target object with the default label, the reference label, or one of a plurality of candidate labels according to the comparison result and a type of the target object.

Abstract: A swing arm lock mechanism for securing a printed circuit board to a bracket includes a main body, a hooked arm, and an aperture in the main body. The hooked arm extends from and is integral with the main body. The hooked arm and main body define an open-ended slot for engaging a lock pin disposed on the bracket. The aperture receives a fastener for securing the main body to the printed circuit board such that the main body and hooked arm can rotate about a central axis of the fastener from a first unlocked position to a second locked position.