Abstract: The present invention discloses a computation circuit. Each of a first and a second term computation circuits includes higher bit computation circuits, a lowest bit computation circuit and a first adder. Each of the higher bit computation circuits left-shifts a multiplier, outputs the effective shifted multiplier having a sign determined and further performs left-shifts without performing 2's complement computation to generate a higher bit computation result. The lowest bit computation circuit outputs the effective multiplier having the sign determined to generate a lowest bit computation result. The first adder adds the bit computation results to generate a term computation result. The third term computation circuit outputs an effective addend having the sign determined and adds the addend to the summation of a number of 2's complement to generate a third term computation result. The second adder adds the term computation results and the third term computation result to generate a total computation result.

Abstract: A memory device and method of making the same are disclosed. The memory device includes transistor devices located in both a memory region and a logic region of the device. Transistor devices in the memory region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, a second oxide layer over the first nitride layer, and a second nitride layer over the second oxide layer. Transistor devices in the logic region include sidewall spacers having a first oxide layer over a side surface of a gate structure, a first nitride layer over the first oxide layer, and a second nitride layer over the first nitride layer.

Abstract: Semiconductor devices and methods of manufacturing the same are provided in which memory cells are manufactured with a double sided word line structure. In embodiments a first word line is located on a first side of the memory cells and a second word line is located on a second side of the memory cells opposite the first side.

Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.

Abstract: A semiconductor structure with an air gap includes a dielectric stack having a first dielectric layer on a substrate, a second dielectric layer on the first dielectric layer, and a third dielectric layer on the second dielectric layer. A first conductive layer and a second conductive layer are disposed in the dielectric stack. The first conductive layer and the second conductive layer are coplanar. A cross-like-shaped air gap is disposed in the dielectric stack between the first and second conductive layers. An oxide layer is disposed on a sidewall of the second dielectric layer within the cross-like-shaped air gap.

Abstract: Material properties of graphene can be leveraged to improve performance of interconnects in an integrated circuit. One way to circumvent challenges involved in depositing graphene onto a copper surface is to incorporate graphene into the bulk metal layer to create a hybrid metal/graphene interconnect structure. Such a hybrid structure can be created instead of, or in addition to, forming a graphene film on the metal surface as a metal capping layer. A first method for embedding graphene into a copper damascene layer is to alternate the metal fill process with graphene deposition to create a composite graphene matrix. A second method is to implant carbon atoms into a surface layer of metal. A third method is to disperse graphene flakes in a damascene copper plating solution to create a distributed graphene matrix. Any combination of these methods can be used to enhance conductivity of the interconnect.

Abstract: Semiconductor devices and methods of manufacturing the same are provided in which memory cells are manufactured with a double sided word line structure. In embodiments a first word line is located on a first side of the memory cells and a second word line is located on a second side of the memory cells opposite the first side.

Abstract: A method for adjusting a transmitting (TX) power ratio of a radio module includes: separating multiple radio modules into multiple radio groups according to a radiofrequency (RF) regulation, wherein the multiple radio modules comprise the radio module; mapping an RF exposure limit to a TX power limit; interacting with at least one other radio module for adjusting the TX power ratio, to obtain at least one adjusted TX power ratio, wherein the radio module and the at least one other radio module are comprised in a same radio group of the multiple radio groups; and adjusting the TX power limit according to the at least one adjusted TX power ratio, to generate an adjusted TX power limit of the radio module.

Abstract: Embodiments are directed to a method for minimizing electrostatic charges in a semiconductor substrate. The method includes depositing photoresist on a semiconductor substrate to form a photoresist layer on the semiconductor substrate. The photoresist layer is exposed to radiation. The photoresist layer is developed using a developer solution. The semiconductor substrate is cleaned with a first cleaning liquid to wash the developer solution from the photoresist layer. A tetramethylammonium hydroxide (TMAH) solution is applied to the semiconductor substrate to reduce charges accumulated in the semiconductor substrate.

Abstract: The present disclosure provides an immersion cooling system for a server cabinet including a plurality of server boxes, a cooling tank and a plurality of liquid connecting pipes. Each server box includes an electronic device immersed in the cooling liquid, and the electronic device generates a thermal energy so that part of the cooling liquid evaporates into a hot vapor. The cooling tank is connected to the plurality of server boxes and includes a condenser and a storage part. The condenser is connected to each server box and condenses the hot vapor to form the cooling liquid. The storage part storages the cooling liquid from the condenser. Two ends of the liquid connecting pipe is connected to the storage part and the server box respectively. The cooling liquid in the storage part and the cooling liquid of each server box are maintained in a same liquid level.

Abstract: An integrated circuit (IC) with through-circuit vias (TCVs) and methods of forming the same are disclosed. The IC includes a semiconductor device, first and second interconnect structures disposed on first and second surfaces of the semiconductor device, respectively, first and second inter-layer dielectric (ILD) layers disposed on front and back surfaces of the substrate, respectively, and a TCV disposed within the first and second interconnect structures, the first and second ILD layers, and the substrate. The TCV is spaced apart from the semiconductor device by a portion of the substrate and portions of the first and second ILD layers. A first end of the TCV, disposed over the front surface of the substrate, is connected to a conductive line of the first interconnect structure and a second end of the TCV, disposed over the back surface of the substrate, is connected to a conductive line of the second interconnect structure.

Abstract: A photosensitive device including a microlens substrate, a photosensitive element substrate, and an optical glue is provided. The microlens substrate includes a first substrate and microlenses. The first substrate has a first side and a second side opposite to the first side. The microlenses are located on the first side of the first substrate. The photosensitive element substrate includes a second substrate, active components, first electrodes, a second electrode, and an organic photosensitive material layer. The second substrate has a third side and a fourth side opposite to the third side. The second side of the first substrate faces the third side of the second substrate. The active components are located on the fourth side of the second substrate. The first electrodes are respectively electrically connected to the active components. The organic photosensitive material layer is located between the first electrodes and the second electrode.

Abstract: An intellectual quality management method is disclosed. A heatmap risk interface is created according to the required data and the parameter configuration which are calculated using a time dependent risk priority number (RPN) equation. An intellectual audit scheduling algorithm is defined via the heatmap risk interface to automatically generate at least one audit plan. An audit program corresponding to the audit plan is performed and a plurality of problem points are selected. Intellectual root cause category recommendation is performed to the questions points. intellectual corrective actions and preventive action recommendations are performed to the problem points according to the intellectual root cause category recommendation to obtain at least one optimum corrective action and at least one preventive action.

Abstract: A voltage balance circuit includes a battery module connected to an external power source, a voltage dividing module, a detection module and a control module. The battery module includes a plurality of batteries connected in series. The voltage dividing module includes a plurality of bleeder resistors. Each bleeder resistor is connected with one battery in parallel. The detection module includes a plurality of thermistors, fixation resistances and micro-controllers. Each thermistor is arranged beside one bleeder resistor. Each thermistor is connected with one fixation resistance in series. Each micro-controller is connected with one thermistor and the one fixation resistance. The control module includes a plurality of switches and an analog front end component. Each switch is connected with the one bleeder resistor in series. Each switch is connected to the analog front end component, and the analog front end component is connected to the one micro-controller.

Abstract: A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

Abstract: A heating device includes a first capacitor, a first switch, a second switch, a second capacitor, a third capacitor, a coil and a controller. The first and second switch are coupled in series at a first node, and are coupled with the first capacitor in parallel. The second capacitor is coupled to the first switch. The third capacitor is coupled to the second switch, and is coupled to the second capacitor at a second node. The coil is coupled between the first and the second node. The controller outputs a first and a second control signal to the first switch and the second switch, respectively. After the heating device received a voltage and a starting command, the controller outputs the first and the second control signal to turn on or off the first and the second switch respectively. The duty cycle of the first signal is lower than 50%.

Abstract: A device comprises a source/drain contact over a source/drain region of a transistor, an etch stop layer above the source/drain contact, an interlayer dielectric (ILD) layer above the etch stop layer, and a source/drain via extending through the ILD layer and the etch stop layer to the source/drain contact. The etch stop layer has an oxidized region in contact with the source/drain via and separated from the source/drain contact.

Abstract: A method for adjusting a transmitting (TX) power ratio of a radio module includes: mapping a radiofrequency (RF) exposure limit to a TX power limit; interacting with at least one other radio module for adjusting the TX power ratio, to obtain an adjusted TX power ratio; and adjusting the TX power limit according to the adjusted TX power ratio, to generate an adjusted TX power limit of the radio module.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. The first conductive via structure has a first substantially strip shape in a top view of the first conductive via structure.

Abstract: A low cost IC solution is disclosed to provide Super CMOS microelectronics macros. Hereinafter, the Super CMOS or Schottky CMOS all refer to SCMOS. The SCMOS device solutions with a niche circuit element, the complementary low threshold Schottky barrier diode pairs (SBD) made by selected metal barrier contacts (Co/Ti) to P— and N—Si beds of the CMOS transistors. A DTL like new circuit topology and designed wide contents of broad product libraries, which used the integrated SBD and transistors (BJT, CMOS, and Flash versions) as basic components. The macros include diodes that are selectively attached to the diffusion bed of the transistors, configuring them to form generic logic gates, memory cores, and analog functional blocks from simple to the complicated, from discrete components to all grades of VLSI chips. Solar photon voltaic electricity conversion and bio-lab-on-a-chip are two newly extended fields of the SCMOS IC applications.