Abstract: An LED structure is applied to a backlight source to set a white light of a backlight module at a standard D65 position of the CIE1931 chromaticity coordinates and used together with a display module. A red phosphor for emitting a red light, a yellow phosphor for emitting a yellow light, and a blue light LED chip are provided. The mixing ratio of the red phosphor to the yellow phosphor is controlled within a range of (2.33?1):1, so that the original LED white light falls within a region enclosed by ccy?1.8*ccx?0.12, ccy?1.8*ccx?0.336, ccy?0.33 and ccy?0.15 of the CIE1931 coordinates. Since the red phosphor does not absorb or convert yellow light, the brightness loss of the yellow light that excites the yellow phosphor is minimized. A color filter may be installed to achieve better NTSC effect and luminous efficacy.

Abstract: A method of synthesizing a composite phosphor by phase transition, characterized by controlling the sintering temperature and duration, changing M2?ySi5N8:Ry phase to M1?xSi6N8 : Rx phase, thereby forming a two-phase composite phosphor, wherein proportions of the two phases of the composite phosphor are variable. As indicated by its varying CIE color coordinates, Sr1.98Si5N8:Eu2+0.02 changes from red to pink, and then to blue. The CIE color coordinates are collinear. If there is no color deviation at the two ends of the straight line, the coordinates of any color resulting from a mixture of two colors will lie on the straight line. The aforesaid synthesis method dispenses with the hassles of sintering two colored phosphors separately, thus attaining uniformity of resultant light color and cutting the costs of phosphor synthesis.

Abstract: A backside illuminated (BSI) image sensor device includes: a substrate including a front side and a back side; a multilayer structure over the back side; and a radiation-sensing region in the substrate. The radiation-sensing region is configured to receive a radiation wave entering from the back side and transmitting through the multilayer structure. The multilayer structure includes a first high-k dielectric layer, a metal silicide layer and a second high-k dielectric layer. The first high-k dielectric layer is located over the back side. The metal silicide layer is sandwiched between the first high-k dielectric layer and the second high-k dielectric layer.

Abstract: A fluoride fluorescent composition contains a tetravalent manganese ion and 2.7 to 7 fluorine atoms, among which the tetravalent manganese ion is doped so as to be a luminescent center. By the advantage of thermal stability of the fluoride fluorescent composition, the luminance, the purity and the quality of projection of the projector are enhanced.

Abstract: An image sensor device includes a substrate, a photo sensitive element, a first dielectric structure and a convex dielectric lens. The substrate has a first side and a second side opposite to the first side. The photo sensitive element is formed on the first side of the substrate for receiving incident light transmitted through the substrate. The first dielectric structure is formed on the second side of the substrate. At least one portion of the convex dielectric lens is located in the first dielectric structure. The convex dielectric lens has a convex side oriented toward the incident light and a planer side oriented toward the photo sensitive element.

Abstract: The high color rendering index (CRI) and high thermal properties of the red nitride phosphor are proposed in the invention. The phosphor would keep the original crystal phase and reduce the change of crystal volume by replacing different atoms. In addition, the red nitride phosphor can be excited by an incident light with wavelength ranging from 370 nm to 470 nm, and that shows the red phosphor of the present invention can be applied in white light emitting diodes. Moreover, the red nitride phosphor proposed by the present invention includes the potential application in main peak modulation and FWHM adjustment, and would be helpful to improve the thermal stability problem of white light emitting diodes.

Abstract: A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process.

Abstract: A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein a first dielectric layer formed over the first side of the semiconductor substrate and an interconnect layer formed over the first dielectric layer. The image sensor structure further comprises a backside illumination film formed over a second side of the semiconductor substrate and a first silicon halogen compound layer formed between the second side of the semiconductor substrate and the backside illumination film.

Abstract: The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface, a plurality of sensor elements disposed at the front surface of the substrate. Each of the plurality of sensor elements is operable to sense radiation projected towards the back surface of the substrate. The image sensor also includes a high-k dielectric grid disposed over the back surface of the substrate. The high-k dielectric grid has a high-k dielectric trench and sidewalls. The image sensor also includes a color filter and a microlens disposed over the high-k dielectric grid.

Abstract: Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece having a front side and a back side opposite the front side. An integrated circuit is formed on the workpiece, and a first insulating material is formed on the back side of the workpiece. A second insulating material is formed over the first insulating material. The second insulating material is patterned to form a grid on the back side of the workpiece.

Abstract: A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein a first dielectric layer formed over the first side of the semiconductor substrate and an interconnect layer formed over the first dielectric layer. The image sensor structure further comprises a backside illumination film formed over a second side of the semiconductor substrate and a first silicon halogen compound layer formed between the second side of the semiconductor substrate and the backside illumination film.

Abstract: Disclosed are compositions and synthetic methods of phosphors that can be efficiently excited by blue light. The wavelength of the blue light is between 400 nm to 480 nm. The phosphors contain garnet fluorescent material activated with cerium, which contain Ba, Y, Tb, Lu, Sc, La, Gd, Sm, or combinations thereof, and Al, Ga, In, or combinations thereof. In addition, the phosphors are easily and quickly prepared in a large amount. The phosphors have high thermal stability and high emission intensity, therefore, being high of value in industry for utilization.

Abstract: A phosphor comprising an oxynitride compound having a chemical formula of A2-mE3O2N4:Mm, wherein A comprises an alkaline-earth element, E comprises a IVA group element, M is an activator comprising a bivalent rare-earth element, and 0.00001?m?1.0, wherein A is at least one element selected from the group consisting of Mg, Ca, Sr and Ba; E is at least one element selected from the group consisting of C, Si, Ge, and Sn; and M is at least one element selected from the group consisting of Lu, Sc, La, Gd, Tb, Eu, and Sm.

Abstract: A display device and a method of manufacturing the same are provided. The display device includes an illuminate unit and a color filter. The illuminate unit has a light-emitting chip and a plurality of quantum dot phosphors for generating a color light which has an optical spectrum including the first blue peak wavelength, a first green peak wavelength, and a first red peak wavelength. The color filter is disposed in the light path of the color light, wherein the color filter has a transmittance spectrum having a second blue peak wavelength, a second green peak wavelength, and a second red peak wavelength. The first blue peak wavelength, the first green peak wavelength, and the first red peak wavelength respectively match the second blue peak wavelength, the second green peak wavelength, and the second red peak wavelength in order to enhance the color performance of the display device.

Abstract: Disclosed are compositions and synthetic methods of phosphors that can be efficiently excited by blue light. The wavelength of the blue light is between 400 nm to 480 nm. The phosphors contain garnet fluorescent material activated with cerium, which contain Ba, Y, Tb, Lu, Sc, La, Gd, Sm, or combinations thereof, and Al, Ga, In, or combinations thereof. In addition, the phosphors are easily and quickly prepared in a large amount. The phosphors have high thermal stability and high emission intensity, therefore, being high of value in industry for utilization.

Abstract: A display device and a method of manufacturing the same are provided. The display device includes an illuminate unit and a color filter. The illuminate unit has a light-emitting chip and a plurality of quantum dot phosphors for generating a color light which has an optical spectrum including the first blue peak wavelength, a first green peak wavelength, and a first red peak wavelength. The color filter is disposed in the light path of the color light, wherein the color filter has a transmittance spectrum having a second blue peak wavelength, a second green peak wavelength, and a second red peak wavelength. The first blue peak wavelength, the first green peak wavelength, and the first red peak wavelength respectively match the second blue peak wavelength, the second green peak wavelength, and the second red peak wavelength in order to enhance the color performance of the display device.

Abstract: The present invention relates to a differential feedback amplifier circuit with cross coupled capacitors. Wherein, the first and second input terminals of a source follower are respectively coupled to the first and second output terminals of a differential amplifier, and a resistor is respectively coupled between the first output terminal of the source follower and the first input terminal of the differential amplifier and between the second output terminal of the source follower and the second input terminal of the differential amplifier in order to form a feedback loop. In addition, a capacitor is respectively coupled between the first end current source gate of the source follower and the second input terminal of the source follower and between the second end current source gate of the source follower and the first input terminal of the source follower, so as to improve the circuit gain and bandwidth.

Abstract: The present invention relates to a differential feedback amplifier circuit with cross coupled capacitors. Wherein, the first and second input terminals of a source follower are respectively coupled to the first and second output terminals of a differential amplifier, and a resistor is respectively coupled between the first output terminal of the source follower and the first input terminal of the differential amplifier and between the second output terminal of the source follower and the second input terminal of the differential amplifier in order to form a feedback loop. In addition, a capacitor is respectively coupled between the first end current source gate of the source follower and the second input terminal of the source follower and between the second end current source gate of the source follower and the first input terminal of the source follower, so as to improve the circuit gain and bandwidth.

Abstract: An integrative microdialysis and chip-based electrophoresis system and analytical method using the same are disclosed. The system combines the microdialysis probe sampling technique and continuous pressure flow feeding coupled with chip-based electrophoresis analysis. It is capable of performing online sampling as well as rapid and continuous monitoring and analysis of biological samples. The system offers the advantages of real-time on-chip dye labeling, simple apparatus setup and easy operation.

Abstract: Organic electroluminescent (OEL) devices are proposed herein to be fabricated either as a light source or a heating source for biochips. Under the proposed approach, an OEL-emitting member is fabricated as the substrate of the biochip on which the biological samples, such as DNA, proteins and other related small molecules, are processed for the desired applications, including but not limited to, analysis of biological molecules, such as electrophoretic separation, PCR amplification and hybridization.