Patents by Inventor Chun-I Tsai
Chun-I Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190164824Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In an embodiment, a barrier layer is formed along a sidewall. A portion of the barrier layer along the sidewall is etched back. After etching back the portion of the barrier layer, an upper portion of the barrier layer along the sidewall is smoothed. A conductive material is formed along the barrier layer and over the smoothed upper portion of the barrier layer.Type: ApplicationFiled: November 29, 2018Publication date: May 30, 2019Inventors: Yu Shih Wang, Chun-I Tsai, Shian Wei Mao, Ken-Yu Chang, Ming-Hsing Tsai, Wei-Jung Lin
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Patent number: 10283359Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: GrantFiled: April 17, 2017Date of Patent: May 7, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Chun-I Tsai, Wei-Jung Lin, Huang-Yi Huang, Cheng-Tung Lin, Hong-Mao Lee
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Patent number: 9978583Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: GrantFiled: April 6, 2017Date of Patent: May 22, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Publication number: 20170221710Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: ApplicationFiled: April 17, 2017Publication date: August 3, 2017Inventors: Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Chun-I Tsai, Wei-Jung Lin, Huang-Yi Huang, Cheng-Tung Lin, Hong-Mao Lee
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Publication number: 20170213720Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: ApplicationFiled: April 6, 2017Publication date: July 27, 2017Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Patent number: 9624576Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: GrantFiled: December 17, 2013Date of Patent: April 18, 2017Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chi-Yuan Chen, Li-Ting Wang, Teng-Chun Tsai, Chun-I Tsai, Wei-Jung Lin, Huang-Yi Huang, Cheng-Tung Lin, Hong-Mao Lee
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Patent number: 9627313Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: GrantFiled: January 25, 2016Date of Patent: April 18, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Publication number: 20160155703Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: ApplicationFiled: January 25, 2016Publication date: June 2, 2016Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Patent number: 9245797Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: GrantFiled: August 19, 2013Date of Patent: January 26, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Patent number: 9219009Abstract: A method of fabricating an integrated circuit (IC) is disclosed. The method includes providing a substrate having a conductive feature. A dielectric layer is formed over the substrate, having an opening to expose the conductive feature. A tungsten (W) capping layer is formed over the conductive feature in the opening without using fluorine-containing gases. A bulk W layer is formed over the W capping layer.Type: GrantFiled: December 20, 2013Date of Patent: December 22, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Han Lai, Chun-I Tsai, Wei-Jung Lin
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Publication number: 20150179512Abstract: A method of fabricating an integrated circuit (IC) is disclosed. The method includes providing a substrate having a conductive feature. A dielectric layer is formed over the substrate, having an opening to expose the conductive feature. A tungsten (W) capping layer is formed over the conductive feature in the opening without using fluorine-containing gases. A bulk W layer is formed over the W capping layer.Type: ApplicationFiled: December 20, 2013Publication date: June 25, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Han LAI, Chun-I TSAI, Wei-Jung LIN
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Publication number: 20150170964Abstract: Systems and methods are provided for contact formation. A semiconductor structure is provided. The semiconductor structure includes an opening formed by a bottom surface and one or more side surfaces. A first conductive material is formed on the bottom surface and the one or more side surfaces to partially fill the opening, the first conductive material including a top portion and a bottom portion. Ion implantation is formed on the first conductive material, the top portion of the first conductive material being associated with a first ion density, the bottom portion of the first conductive material being associated with a second ion density lower than the first ion density. At least part of the top portion of the first conductive material is removed. A second conductive material is formed to fill the opening.Type: ApplicationFiled: December 17, 2013Publication date: June 18, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: CHI-YUAN CHEN, LI-TING WANG, TENG-CHUN TSAI, CHUN-I TSAI, WEI-JUNG LIN, HUANG-YI HUANG, CHENG-TUNG LIN, HONG-MAO LEE
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Publication number: 20150048511Abstract: Methods of forming conductive structures and the conductive structures are disclosed. A method includes forming an opening in a dielectric layer over a substrate, performing a cleaning process on the dielectric layer with the opening, forming a nucleation layer in the opening, etching the nucleation layer in the opening, and forming a conductive material in the opening and on the nucleation layer after the etching. An upper portion of the opening is distal from the substrate, and a lower portion of the opening is proximate the substrate. After the etching, a thickness of an upper portion of the nucleation layer in the upper portion of the opening is less than a thickness of a lower portion of the nucleation layer in the lower portion of the opening.Type: ApplicationFiled: August 19, 2013Publication date: February 19, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-I Tsai, Chi-Yuan Chen, Wei-Jung Lin, Chia-Han Lai
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Publication number: 20140279186Abstract: Wearable objects purchased by a user are added to a digital wardrobe associated with the user. The user can create and store various outfits from the contents of the digital wardrobe. A recommender system also accesses the digital wardrobe and provides recommendations of wearable items personalized to the user's tastes.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Inventors: Wen-Hsiang Juan, Chun-I Tsai, San-Ching Yu