Abstract: The present disclosure provides a pixel circuit with pulse width compensation, and the pixel circuit includes a pulse width modulation circuit and a pulse amplitude modulation circuit, and the pulse amplitude modulation circuit is electrically connected to the pulse width modulation circuit. The pulse width modulation circuit includes a P-type pulse width compensation transistor and a first P-type control transistor, and the first P-type control transistor is electrically connected to the P-type pulse width compensation transistor. The pulse amplitude modulation circuit includes a second P-type control transistor, a first capacitor, a P-type driving transistor and a light-emitting element. The second P-type control transistor is electrically connected to the first P-type control transistor. The first capacitor is electrically connected to the second P-type control transistor.

Abstract: Disclosed herein is a polysuccinimide derivative, which, under a pH of not greater than 6, includes a first repeating unit represented by formula (I), and a second repeating unit represented by formula (II), wherein each of the substituents is given the definition as set forth in the Specification and Claims. The second repeating unit is present in an amount ranging from 1 mol % to 90 mol % based on 100 mol % of the first repeating unit. Also disclosed herein is a nanomaterial including a plurality of nanoparticles, each of which, under a pH of not greater than 6, includes a hydrophobic substance and a carrier which is made from the polysuccinimide derivative and which encloses the hydrophobic substance.

Abstract: The present disclosure provides a scan driving circuit, which includes a pull-up output charging circuit, a pull-down discharge circuit, a pre-charge circuit, an anti-noise start-up circuit and an anti-noise pull-down discharge circuit. The pull-up output charging circuit is electrically connected to an output terminal, and the pull-down discharge circuit is electrically connected to the output terminal. The pre-charge circuit is electrically connected to the pull-up output charging circuit and the pull-down discharge circuit through a driving node. The anti-noise start-up circuit is electrically connected to the pre-charge circuit. The anti-noise pull-down discharge circuit is electrically connected to the anti-noise start-up circuit, and the anti-noise pull-down discharge circuit is electrically connected to the driving node.

Abstract: A backlight module includes a light source, a first prism sheet disposed on the light source, and a light type adjustment sheet disposed on a side of the first prism sheet away from the light source and including a base and multiple light type adjustment structures. The multiple light type adjustment structures are disposed on the first surface of the base. Each light type adjustment structure has a first structure surface and a second structure surface connected to each other. The first structure surface of each light type adjustment structure and the first surface of the base form a first base angle therebetween, and the second structure surface of each light type adjustment structure and the first surface of the base form a second base angle therebetween. The angle of the first base angle is different from the angle of the second base angle.

Abstract: The present disclosure provides a scan driving circuit, which includes a pull-up output charging circuit, a pull-down discharge circuit, a pre-charge circuit, an anti-noise start-up circuit and an anti-noise pull-down discharge circuit. The pull-up output charging circuit is electrically connected to an output terminal, and the pull-down discharge circuit is electrically connected to the output terminal. The pre-charge circuit is electrically connected to the pull-up output charging circuit and the pull-down discharge circuit through a driving node. The anti-noise start-up circuit is electrically connected to the pre-charge circuit. The anti-noise pull-down discharge circuit is electrically connected to the anti-noise start-up circuit, and the anti-noise pull-down discharge circuit is electrically connected to the driving node.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A semiconductor device and method of fabricating the same include a substrate, a first epitaxial layer, a first protection layer, and a contact etching stop layer. The substrate includes a PMOS transistor region, and the first epitaxial layer is disposed on the substrate, within the PMOS transistor region. The first protection layer is disposed on the first epitaxial layer, covering surfaces of the first epitaxial layer. The contact etching stop layer is disposed on the first protection layer and the substrate, wherein a portion of the first protection layer is exposed from the contact etching stop layer.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.

Abstract: A controlling method of a converter includes performing a state detecting step and a switch controlling step. The state detecting step is performed to detect an operation state of a secondary side rectifier of the converter from a control winding. The switch controlling step is performed to control an active clamp switch of the converter according to the operation state of the secondary side rectifier. The secondary side rectifier is a diode.

Abstract: A controlling method of a converter including an active clamp switch and a secondary side rectifier includes performing a state detecting step and a switch controlling step. The state detecting step is performed to detect an operation state of the secondary side rectifier. The switch controlling step is performed to control the active clamp switch according to the operation state of the secondary side rectifier.

Abstract: A driving method and a driving device using the same are disclosed. The driving method controls a pulse transformer. The secondary winding of the pulse transformer is electrically connected to a control device. Firstly, positive charging electrical energy is delivered to the primary winding, thereby charging the control device. Then, the control device is disconnected from the secondary winding while the primary winding is in a high-impedance state. Finally, negative discharging electrical energy is delivered to the primary winding and the control device is electrically connected to the secondary winding, thereby discharging the control device, and the primary winding is in a low-impedance state after the step of delivering the negative discharging electrical energy to the primary winding.

Abstract: A biocompatible copolymer includes a phosphorylcholine-containing structural unit represented by formula (I), a siloxy-containing structural unit represented by formula (II), and a photoreactive structural unit represented by formula (III), wherein each of the substituents is given the definition as set forth in the Specification and Claims. A curable composition, a biocompatible coating layer, and a biocompatible device containing the biocompatible copolymer are also disclosed.

Abstract: A driving method and a driving device using the same are disclosed. The driving method controls a pulse transformer. The secondary winding of the pulse transformer is electrically connected to a control device. Firstly, positive charging electrical energy is delivered to the primary winding, thereby charging the control device. Then, the control device is disconnected from the secondary winding while the primary winding is in a high-impedance state. Finally, negative discharging electrical energy is delivered to the primary winding and the control device is electrically connected to the secondary winding, thereby discharging the control device, and the primary winding is in a low-impedance state after the step of delivering the negative discharging electrical energy to the primary winding.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate with gate structures formed thereon is provided. A source/drain region is formed in the semiconductor substrate and formed between the gate structures. A dielectric layer is formed on the source/drain region and located between the gate structures. An opening penetrating the dielectric layer on the source/drain region is formed. A lower portion of a first conductive structure is formed in the opening. A dielectric spacer is formed on the lower portion and on an inner wall of the opening. An upper portion of the first conductive structure is formed in the opening and on the lower portion. The dielectric spacer surrounds the upper portion of the first conductive structure. The first conductive structure is formed by two steps for forming the dielectric spacer surrounding the upper portion and improving the electrical performance of the semiconductor device.

Abstract: A semiconductor structure includes a semiconductor substrate, at least a silicon germanium (SiGe) epitaxial region disposed in the semiconductor substrate, and a contact structure disposed on the SiGe epitaxial region. The contact structure includes a titanium nitride (TiN) barrier layer and a metal layer surrounded by the TiN barrier layer. A crystalline titanium germanosilicide stressor layer is disposed in the SiGe epitaxial region and between the TiN barrier layer and the SiGe epitaxial region.

Abstract: An oriented loading system is provided. The oriented loading system includes a substrate, a plurality of wells formed in the substrate, each well having a bottom and sidewalls, a plurality of particles loaded in the wells, wherein the particle comprises a core structure and an inner layer comprising magnetic material partially covering the core structure such that a part of the core structure uncovered by the inner layer is exposed, and a metal layer comprising magnetic material deposited partially in the sidewalls of the wells, wherein the inner layer is attracted by the metal layer such that the exposed core structure is oriented towards the bottom of the well or the inner layer is oriented towards the bottom of the well.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a spacer around the gate structure; forming a first contact etch stop layer (CESL) around the spacer; forming a mask layer on the first CESL; removing part of the mask layer; removing part of the first CESL; forming a second CESL on the mask layer and the gate structure; and removing part of the second CESL.

Abstract: A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate with gate structures formed thereon is provided. A source/drain region is formed in the semiconductor substrate and formed between the gate structures. A dielectric layer is formed on the source/drain region and located between the gate structures. An opening penetrating the dielectric layer on the source/drain region is formed. A lower portion of a first conductive structure is formed in the opening. A dielectric spacer is formed on the lower portion and on an inner wall of the opening. An upper portion of the first conductive structure is formed in the opening and on the lower portion. The dielectric spacer surrounds the upper portion of the first conductive structure. The first conductive structure is formed by two steps for forming the dielectric spacer surrounding the upper portion and improving the electrical performance of the semiconductor device.