Abstract: A polyethylene terephthalate composite material containing glass fiber and a method for manufacturing the same are provided. The polyethylene terephthalate composite material includes 40 to 65.5 parts by weight of polyethylene terephthalate, 5 to 40 parts by weight of the glass fiber, and 0.15 to 2.5 parts by weight of a crystallizing agent. The crystallizing agent includes an inorganic crystallizing agent and an organic crystallizing agent, and an added amount of the inorganic crystallizing agent is less than an added amount of the organic crystallizing agent.

Abstract: A chip package with electromagnetic interference (EMI) shielding layer and a method of manufacturing the same are provided. The chip package includes a chip, a redistribution layer (RDL), an insulating layer, and an electromagnetic interference (EMI) shielding layer. A peripheral wall is formed around at least one first opening of the insulating layer for enclosing the first opening and a flat portion is disposed around the peripheral wall while a level of the flat portion is lower than a level of the peripheral wall. The flat portion of the insulating layer is covered with the EMI shielding layer which is isolated and electrically insulated from a pad in the first opening by the peripheral wall of the insulating layer. Thereby problems of the chip including fast increase in temperature and electromagnetic interference can be solved effectively.

Abstract: Methods of forming contacts for source/drain regions and a contact plug for a gate stack of a finFET device are disclosed herein. Methods include etching a contact opening through a dielectric layer to expose surfaces of a first source/drain contact and repairing silicon oxide structures along sidewall surfaces of the contact opening and along planar surfaces of the dielectric layer to prevent selective loss defects from occurring during a subsequent selective deposition of conductive fill materials and during subsequent etching of other contact openings. The methods further include performing a selective bottom-up deposition of conductive fill material to form a second source/drain contact. According to some of the methods, once the second source/drain contact has been formed, the contact plug may be formed over the gate stack.

Abstract: An object detection method is suitable for a virtual reality system. The object detection method includes a plurality of first cameras of a head-mounted display (HMD) to capture a plurality of first frames. A plurality of second frames are captured through a plurality of second cameras in a tracker, wherein, the object detector searches for the object position in the first frames and the second frames.

Abstract: A chip package which includes a glass fiber substrate made of FR-4 fiberglass is provided. The chip package further includes a substrate pad which is a stacked metal structure with a certain thickness and composed of a nickel layer, a palladium layer, and a gold layer, or a nickel layer and a gold layer stacked over at least one first circuit layer in turn. A total thickness of the substrate pad is 3.15-5.4 ?m. The glass fiber substrate and the substrate pad can bear positive pressure generated during wire bonding. Thereby at least one solder joint is formed on the substrate pad precisely and integrally. This helps reduction in material cost for manufacturers.

Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A chip package having die pads with protective layers is provided. At least one protective layer is covering and arranged at a peripheral zone of at least one die pad for minimizing area of the die pad exposed outside as well as shielding and protecting the peripheral zone of the die pad. A weld zone of the die pad is not covered by the protective layer so that the weld zone of the die pad is exposed. In a crossed-over state, one of bonding wires crossing one of the die pads with a corresponding connection pad of a carrier plate will not get across a second upper space defined by the weld zone of the rest of the die pads. Thereby the one of the bonding wires can be more isolated by the protective layers on the peripheral zones of the rest of the die pads.

Abstract: A chip package with at least one electromagnetic interference (EMI) shielding layer and at least one ground wire and a method of manufacturing the same are provided. The chip package includes a chip package unit, at least one EMI shielding layer, and at least one ground wire. The ground wire which consists of a first end and a second end opposite to the first end is inserted through the EMI shielding layer and a first insulating layer of the chip package unit. The first end is electrically connected with the EMI shielding layer while the second end of the ground wire is electrically connected with at least one grounding end of at least one first circuit layer of the chip package unit for protection against static electricity. Thereby malfunction of an electronic system with semiconductor chips due to static electricity can be avoided.

Abstract: A chip package having four sides provided with electromagnetic interference (EMI) shielding layers correspondingly and a method of manufacturing the same are provided. The four EMI shielding layers are made of metals, located on four lateral sides of the chip package, and completely covering four lateral sides of a substrate and four lateral sides of an insulating layer to prevent at least one first circuit layer, at least one second circuit layer, and at least one chip from electromagnetic interference. Moreover, the EMI shielding layers help to improve heat dissipation efficiency of the first circuit layer, the second circuit layer, and the chip.

Abstract: A chip package with an electromagnetic interference shielding layer and a method of manufacturing the same are provided. The chip package includes a substrate, at least one first circuit layer, at least one second circuit layer, at least one chip, a first insulating layer, and at least one electromagnetic interference shielding layer. The electromagnetic interference shielding layer is made of metals and covering a first surface of the first insulating layer completely for preventing the respective first circuit layers, the respective second circuit layers, and the respective chips from external electromagnetic interference (EMI).

Abstract: A chip package unit, a method of manufacturing the same, and package structure formed by stacking the same are provided. At least one first connecting pad, at least one second connecting pad, and at least one third connecting pad of a flexible printed circuit (FPC) board in the chip package unit are electrically connected with one another by circuit of the FPC board. At least one die pad disposed on a front surface of a chip is electrically connected with the first connecting pad first and then electrically connected with the outside by the second connecting pad or the third connecting pad. Thereby the chip of the chip package unit can be electrically connected with the outside by the front surface or a back surface thereof. Therefore, not only production is reduced due to simplified production process and energy saved, volume of the package structure is also reduced.

Abstract: A chip package unit, a method of manufacturing the same, and a package structure formed by stacking the same are provided. The chip package unit is formed by cutting of a wafer separately. The chip package unit includes a chip, a first redistribution layer (RDL), a second RDL, and at least one first circuit layer. The first circuit layer is electrically connected with and disposed between a first conductive circuit and a second conductive circuit. The first circuit layer is located at least one first lateral side of the chip, at least one second lateral side of the first RDL, and at least one third lateral side of the second RDL. The chip can be electrically connected with the outside by the first conductive circuit or the second conductive circuit. Thereby manufacturing process is simplified and manufacturing cost is further reduced.

Abstract: The present application discloses a thinning system in package featuring an encapsulation structure in which no printed circuit board exists and comprising: a plurality of dies mounted on a top face of a copper holder and electrically connected to the plurality of data pins on the copper holder; a passive element mounted on the top face and electrically connected to the dies wherein the dies are electrically connected to the ground pin of the copper holder and both the dies and the passive element are fixed on the top face of the copper holder through a layer of insulation adhesives; a molding compound encasing the dies and the passive element on the top face of the copper holder.

Abstract: A multi-layer stacked chip package is provided. A first substrate, a first circuit layer, a first chip, and a first insulation layer form a lower layer chip package while a second substrate, a second circuit layer, a second chip, and a second insulation layer form an upper layer chip package. The upper layer chip package is stacked over the lower layer chip package so that the multi-layer stacked chip package is formed by such stacking mode. One of the at least two chips is used to operate the rest chips or computing functions of the respective chips are combined to increase overall computing performance.

Abstract: A chip package which includes a chip, at least one first dielectric layer, at least one second dielectric layer, at least one conductive circuit, and at least one third dielectric layer is provide. The conductive circuit is formed by highly concentrated silver paste or copper paste filled in at least one first groove of the first dielectric layer and at least one second groove of the second dielectric layer while at least one die pad of the chip is electrically connected with the conductive circuit for improving electrical conduction efficiency of the conductive circuit. Moreover, at least one die-pad bump is formed in the first groove, arranged at and electrically connected with a surface of the die pad for protecting of the die pad.

Abstract: A chip package and a method of manufacturing the same are provided. The chip package includes at least one insulating protective layer disposed on a periphery of a surface of a seed layer correspondingly. A plurality of insulating protective layers is arranged at the seed layer of a plurality of rectangular chips of a wafer and located corresponding to a plurality of dicing streets. Thereby cutting tools only cut the insulating protective layer, without cutting a thick metal layer during cutting process. The insulating protective layer is formed on a periphery of the thick metal layer of the chip package after the cutting process.

Abstract: A bump of a chip package with higher bearing capacity in wire bonding is provided. The at least one bump of the chip package is a metal stacked member with a certain thickness. An overall thickness of the bump is 4.5-20 ?m. Thereby a structural strength of the bump is improved and thus able to bear positive pressure generated in wire bonding or formation of a first bonding point. Thus at least one internal circuit of a chip will not be damaged by the positive pressure and allowed to pass through an area under at least one die pad or arrange under the die pad of the chip. Thereby increased cost problem caused by internal circuit redesign of the chip can be solved and this helps to reduce cost at manufacturing end.

Abstract: A blockchain-based carbon neutral transaction processing method includes following steps. An electricity sensor of each of a plurality of blockchain nodes of a blockchain system generates a local electricity information. After the electricity sensor generates the local electricity information, the blockchain system verifies whether the local electricity information of each of the blockchain nodes is correct. If the blockchain system verifies that the local electricity information of each of the blockchain nodes is correct, the blockchain system uploads the local electricity information of each of the blockchain nodes to a blockchain network of the blockchain system.

Abstract: A chip package with higher bearing capacity in wire bonding is provided. The chip package includes at least one conductive circuit which is a structure with a thickness ranging from 4.5 ?m to 20 ?m. Thereby a structural strength of the conductive circuit is improved and able to stand a positive pressure generated in wire bonding or formation of a first bonding point. Thus at least one internal circuit of a chip will not be damaged by the positive pressure and allowed to pass through an area under the first bonding point or arrange under the first bonding point. A problem of increased cost at manufacturing end caused by the internal circuit redesign of the chip can be solved effectively. This is beneficial to cost reduction at manufacturing end.