Abstract: A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters.

Abstract: A stacked-chip packaging structure includes chip sets, a heat sink, a substrate, a circuit board, and solder balls. The chip sets are stacked together, each of which has a heat-dissipation structure and a chip. The heat-dissipation structure has a chip recess, through holes arranged in the chip recess, and an extending portion extending from the chip recess. The chip disposed in the chip recess has bumps. Each bump on the chip is correspondingly disposed in one of the through holes of the heat-dissipation structure. The extending portion of the heat-dissipation structure of each chip set contacts that of the neighboring chip set. The heat sink and the substrate are disposed at two opposite sides of the chip sets, respectively. The circuit board is below the substrate. The solder balls are between the circuit board and the substrate.

Abstract: A thermoelectric conversion device includes a hot terminal substrate, a cold terminal substrate and a stacked structure. The stacked structure is disposed between the hot terminal substrate and the cold terminal substrate. The stacked structure includes thermoelectric conversion layers each including a thermoelectric couple layer, a first conductive layer and a second conductive layer, a first heat-conductive and electrically insulating structure and a second heat-conductive and electrically insulating structure. Each of the thermoelectric conversion layers is arranged in the stacked structure. The first conductive layer includes first conductive materials and is arranged on tops of P/N type thermoelectric conversion elements. The second conductive layer includes second conductive materials and is arranged on bottoms of the P/N type thermoelectric conversion elements. The first heat-conductive and electrically insulating structure is connected between two adjacent first conductive layers.

Abstract: A thermoelectric apparatus includes a first and a second assemblies, at least a first and a second heat conductors. The first assembly includes a first and a second substrates, and several first thermoelectric material sets disposed between the first and second substrates. The first substrate has at least a first through hole. The second assembly includes a third and a fourth substrates, and several second thermoelectric material sets disposed between the third and fourth substrates. The fourth substrate has at least a second through hole. Each of the first and second thermoelectric material sets has a p-type and an n-type thermoelectric element. The first and second heat conductors respectively penetrate the first and second through holes. Two ends of the first heat conductor respectively connect the second and fourth substrates, while two ends of the second heat conductor respectively connect the first and third substrates.

Abstract: An apparatus for measuring a characteristic and a chip temperature of an LED includes a thermal conductive component. An LED chip is disposed on the thermal conductive component. A temperature control unit is connected to the thermal conductive component for providing a temperature to the thermal conductive component, and therefore providing the temperature to the LED chip via the thermal conductive component. A power-source and voltage-meter unit provides a current to the LED chip, and measures a voltage value of the LED chip. Under a measurement mode, the current is featured with a current waveform having a high current level and a low current level which are alternatively changed, for applying to the LED chip. Measurements are conducted respectively corresponding to the high current level and the low current level, and a correlation curve between the voltage and the temperature can be obtained with the results of measurement.

Abstract: An integrated package structure having a solar cell and a thermoelectric element includes a substrate, a first solar cell and a thermoelectric element. The substrate has a first surface. The first solar cell has a second surface, a first electrode disposed on the second surface and a second electrode disposed on the second surface. The second surface faces the first surface. The thermoelectric element has a third electrode and a fourth electrode. The thermoelectric element is disposed between the first surface and the second surface. The first electrode and the second electrode are electrically connected to the third electrode and the fourth electrode respectively. A method of fabricating the integrated package structure having the solar cell and the thermoelectric element is also provided.

Abstract: A flexible thermoelectric device and a manufacturing method thereof are provided. Flexible substrates are formed by using LIGA process, micro-electro-mechanical process or electroforming technique. The flexible substrates are used to produce thermoelectric device. The structure and the material property of the substrates offer flexible property and tensile property to the thermoelectric device. Thermal transfer enhancement structures such as thermal via or metal diffusion layer are formed on the flexible substrates to overcome the low thermal transfer property of the flexible substrates.

Abstract: A method of fabricating a light emitting diode package structure is provided. First, a first circuit substrate having a first surface and a corresponding second surface and a second circuit substrate having a third surface and a corresponding fourth surface are provided. The second surface and the third surface respectively have a plurality of electrodes. Then, a plurality of N-type semiconductor materials and a plurality of P-type semiconductor materials alternatively arranged on the electrodes are formed. Then, the first circuit substrate and the second circuit substrate are assembled. The two type semiconductor materials are located between the electrodes of the first circuit substrate and the second circuit substrate. The two type semiconductor materials are electrically connected to the first circuit substrate and the second circuit substrate through the electrodes. Finally, an LED chip is arranged on the first surface and electrically connected to the first circuit substrate.

Abstract: Disclosed is a thermally conductive, electrically insulating composite film, including interface layers disposed on the top and bottom surface of a metal substrate, and an insulation layer. Because the film has thermal conductivity and electric insulation properties, it can be disposed between the chips of a stack chip package structure, thereby dissipating the heat in horizontal and vertical directions simultaneously.

Abstract: An apparatus and a method for measuring a diode chip are provided. The diode chip is placed on a thermal conductive element. The apparatus measures an instant starting current and a first temperature, which is associated with the instant starting current, of the thermal conductive element. After the diode chip operates, the apparatus adjusts the temperature of the thermal conductive element to a second temperature, such that the current of the diode chip is adjusted to be equal to the instant starting current. The apparatus calculates a property of the diode chip according to a real power of the diode chip and a difference between the first temperature and the second temperature.

Abstract: Package structures for integrating thermoelectric components with stacking chips are presented. The package structures include a chip with a pair of conductive through vias. Conductive elements are disposed one side of the chip contacting the pair of conductive through vias. Thermoelectric components are disposed on the other side of the chip, wherein the thermoelectric component includes a first type conductive thermoelectric element and a second type conductive thermoelectric element respectively corresponding to and electrically connecting to the pair of conductive through vias. A substrate is disposed on the thermoelectric component, wherein the thermoelectric component, the pair of conductive through vias and the conductive element form a thermoelectric current path. Therefore, heat generated from the chip is transferred outward through a thermoelectric path formed from the thermoelectric components, the conductive through vias and the conductive elements.

Abstract: A light emitting diode (LED) package structure including a first substrate, one or more LED chips, a second substrate, and a thermoelectric cooling device is provided. The first substrate has a first surface and a corresponding second surface. The LED chip suitable for emitting a light is arranged on the first surface of the first substrate, and is electrically connected to the first substrate. The second substrate is below the first substrate, and has a third surface and a corresponding fourth surface. The third surface faces the second surface. The thermoelectric cooling device is arranged between the second surface of the first substrate and the third surface of the second substrate for conducting heat generated by the LED chip during operation.

Abstract: A stacked-chip packaging structure includes chip sets, a heat sink, a substrate, a circuit board, and solder balls. The chip sets are stacked together, each of which has a heat-dissipation structure and a chip. The heat-dissipation structure has a chip recess, through holes arranged in the chip recess, and an extending portion extending from the chip recess. The chip disposed in the chip recess has bumps. Each bump on the chip is correspondingly disposed in one of the through holes of the heat-dissipation structure. The extending portion of the heat-dissipation structure of each chip set contacts that of the neighboring chip set. The heat sink and the substrate are disposed at two opposite sides of the chip sets, respectively. The circuit board is below the substrate. The solder balls are between the circuit board and the substrate.

Abstract: A light emitting apparatus comprising a substrate, a first functional chip and a first light emitting component is provided. The substrate, the first functional chip, and the first light emitting component have a plurality of first bumps. In addition, the first functional chip has a plurality of first vias. The first light emitting component and the first functional chip are stacked on the substrate. Hence, the first light emitting component is electrically connected to the first functional chip and the substrate by the first vias and the first bumps.

Abstract: A thermoelectric conversion device includes a hot terminal substrate, a cold terminal substrate and a stacked structure. The stacked structure is disposed between the hot terminal substrate and the cold terminal substrate. The stacked structure includes thermoelectric conversion layers each including a thermoelectric couple layer, a first conductive layer and a second conductive layer, a first heat-conductive and electrically insulating structure and a second heat-conductive and electrically insulating structure. Each of the thermoelectric conversion layers is arranged in the stacked structure. The first conductive layer includes first conductive materials and is arranged on tops of P/N type thermoelectric conversion elements. The second conductive layer includes second conductive materials and is arranged on bottoms of the P/N type thermoelectric conversion elements. The first heat-conductive and electrically insulating structure is connected between two adjacent first conductive layers.

Abstract: A thermoelectric device including a first substrate, a plurality of conductive vias, a second substrate, a thermoelectric couple module, a first insulation layer, and a second insulation layer is provided. The first substrate has a first surface and a second surface opposite to each other. The conductive vias running through the first substrate respectively connect the first and the second surface. The second substrate faces the second surface of the first substrate. The thermoelectric couple module including a plurality of thermoelectric couples connected with each other in series is disposed between the first and the second substrate and coupled to the conductive vias. The first insulation layer is disposed between the thermoelectric couple module and the first substrate. The second insulation layer is disposed between the thermoelectric couple module and the second substrate.

Abstract: The invention discloses an encapsulation comprising a metal substrate, a PCB on the metal substrate, a thermo-electric element in and/or on the PCB, and an LED on the thermo-electric element. Encapsulating methods are also provided by the invention.

Abstract: A method of fabricating a light emitting diode package structure is provided. First, a first circuit substrate having a first surface and a corresponding second surface and a second circuit substrate having a third surface and a corresponding fourth surface are provided. The second surface and the third surface respectively have a plurality of electrodes. Then, a plurality of N-type semiconductor materials and a plurality of P-type semiconductor materials alternatively arranged on the electrodes are formed. Then, the first circuit substrate and the second circuit substrate are assembled. The two type semiconductor materials are located between the electrodes of the first circuit substrate and the second circuit substrate. The two type semiconductor materials are electrically connected to the first circuit substrate and the second circuit substrate through the electrodes. Finally, an LED chip is arranged on the first surface and electrically connected to the first circuit substrate.

Abstract: An active solid heatsink device and fabricating method thereof is related to a high-effective solid cooling device, where heat generated by a heat source with a small area and a high heat-generating density diffuses to a whole substrate using a heat conduction characteristic of hot electrons of a thermionic (TI) structure, and the thermionic (TI) structure and a thermo-electric (TE) structure share the substrate where the heat diffuses to. Further, the shared substrate serves as a cold end of the TE structure, and the heat diffusing to the shared substrate is pumped to another substrate of the TE structure serving as a hot end of the TE structure.

Abstract: A light emitting diode (LED) package structure including a first substrate, an LED chip, a second substrate, and a thermoelectric cooling device is provided. The first substrate has a first surface and a corresponding second surface. The LED chip suitable for emitting a light is arranged on the first surface of the first substrate, and is electrically connected to the first substrate. The second substrate is below the first substrate, and has a third surface and a corresponding fourth surface. The third surface faces the second surface. The thermoelectric cooling device is arranged between the second surface of the first substrate and the third surface of the second substrate for conducting heat generated by the LED chip during operation.