Abstract: In some embodiments, the present disclosure relates to an integrated transistor device, including a first barrier layer arranged over a substrate. Further, an undoped layer may be arranged over the first barrier layer and have a n-channel device region laterally next to a p-channel device region. The n-channel device region of the undoped layer has a topmost surface that is above a topmost surface of the p-channel device region of the undoped layer. The integrated transistor device may further comprise a second barrier layer over the n-channel device region of the undoped layer. A first gate electrode is arranged over the second barrier layer, and a second gate electrode is arranged over the p-channel device region of the undoped layer.

Abstract: This invention discloses oligosilane compounds. These compounds can be used in OLEDs.

Abstract: A compound comprising a first ligand LA of Formula I, where at least one RA or RB substituent has a structure according to Formula II, is provided. In Formula I and Formula II, moieties A, B, and C are independently rings or a fused-ring systems; each of X1, X2, Z1, Z2, X3, and Z4 is C or N; K a direct bond or selected from the group consisting of O, S, N(R?), P(R?), B(R?), C(R?)(R?), and Si(R?)(R?); L is a linker; n is 1, 2, or 3; each R, R?, R?, R?, RA, RB, RC, RL, and RL? is independently hydrogen or a General Substituent; and at least one R or R? is a fully or partially fluorinated alkyl group, a fully or partially fluorinated cycloalkyl group, a cyano group, a cyanoalkyl group, or a silyl group. Formulations, OLEDs, and consumer products containing the compound are also provided.

Abstract: A key structure including a carrier, a keycap, a lifting member, and an elastic member is provided. The carrier includes a carrier body and multiple positioning hooks. The carrier body has multiple vias, and the positioning hooks are respectively disposed corresponding to the vias. Orthographic projection of each of the positioning hooks falls in the corresponding via. Each of the positioning hooks includes a first positioning portion and a second positioning portion respectively connected to two inner wall surfaces in the corresponding via. The keycap is disposed above the carrier body. The lifting member is disposed between the carrier body and the keycap. One end of the lifting member is connected to the keycap, and an other end of the lifting member is connected to the positioning hooks. The elastic member is disposed between the carrier body and the keycap.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A compound is disclosed that has a metal coordination complex structure having at least two ligands coordinated to the metal; wherein the compound has a first substituent R1 at one of the ligands' periphery; wherein a first distance is defined as the distance between the metal and one of the atoms in R1 where that atom is the farthest away from the metal among the atoms in R1; wherein the first distance is also longer than any other atom-to-metal distance between the metal and any other atoms in the compound; and wherein when a sphere having a radius r is defined whose center is at the metal and the radius r is the smallest radius that will allow the sphere to enclose all atoms in the compound that are not part of R1, the first distance is longer than the radius r by at least 2.9 ?.

Abstract: The invention provides a semiconductor bonding structure, the semiconductor bonding structure includes a first chip and a second chip which are bonded with each other, the first chip has a first bonding pad and the second bonding pad contacted and electrically connected to each other on a bonding interface, the first bonding pad and the second bonding pad are made of copper, and a heterogeneous contact combination in the first chip, the heterogeneous contact combination comprises a contact stack structure of a copper element, a tungsten element and an aluminum element, the tungsten element is located between the copper element and the aluminum element.

Abstract: A door lock device is provided and includes: a housing, an acting assembly arranged in the housing and having a lock tongue, an operating assembly arranged in the housing and interlocked with an outdoor handle, and a regulating assembly arranged in the housing for a user to regulate the operating assembly into an interlocking state or an idle state. As such, in the interlocking state, the outdoor handle drives the acting assembly through the operating assembly to cause the lock tongue to extend or retract relative to the housing, and in the idle state, the operating assembly cannot drive the acting assembly and the outdoor handle cannot be interlocked with the lock tongue.

Abstract: A compound including a first ligand LA having a structure of Formula I is disclosed. The compound is useful a an emitter dopants in OLEDs for enhancing the OLED performance.

Abstract: Pharmaceutical composition comprising antibodies or antigen binding fragments thereof that bind to stage-specific embryonic antigen 4 (SSEA-4) are disclosed herein, as well as methods of use thereof. Methods of use include, without limitation, cancer therapies and diagnostics. The antibodies of the disclosure can bind to certain cancer cell surfaces. Exemplary targets of the antibodies disclosed herein can include carcinomas, such as breast cancer, lung cancer, esophageal cancer, rectal cancer, biliary cancer, liver cancer, buccal cancer, gastric cancer, colon cancer, nasopharyngeal cancer, kidney cancer, prostate cancer, ovarian cancer, cervical cancer, endometrial cancer, pancreatic cancer, testicular cancer, bladder cancer, head and neck cancer, oral cancer, neuroendocrine cancer, adrenal cancer, thyroid cancer, bone cancer, skin cancer, basal cell carcinoma, squamous cell carcinoma, melanoma, and/or brain tumor.

Abstract: Source and drain formation techniques disclosed herein provide FinFETs with reduced channel resistance and reduced drain-induced barrier lowering. An exemplary three-step etch method for forming a source/drain recess in a source/drain region of a fin includes a first anisotropic etch, an isotropic etch, and a second anisotropic etch. The first anisotropic etch and the isotropic etch are tuned to define a location of a source/drain tip. A depth of the source/drain recess after the first anisotropic etch and the isotropic etch is less than a target depth. The second anisotropic etch is tuned to extend the depth of the source/drain recess to the target depth. The source/drain tip is near a top of the fin to reduce channel resistance while a bottom portion of the source/drain recess is spaced a distance from a gate footing that can minimize DIBL. The source/drain recess is filled with an epitaxial semiconductor material.

Abstract: A semiconductor device includes a substrate having a first region and a second region. Multiple nanostructures are vertically stacked above the first region of the substrate. A first gate dielectric layer wraps each of the nanostructures. A first gate electrode layer is disposed on the first gate dielectric layer. A fin protruding from the second region of the substrate. The fin includes alternating first and second semiconductor layers with different material compositions. A second gate dielectric layer is disposed on top and sidewall surfaces of the fin. A second gate electrode layer is disposed on the second gate dielectric layer. A thickness of the first gate dielectric layer is smaller than a thickness of the second gate dielectric layer.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a gate stack over the first fin and the second fin. The method includes forming a first spacer over gate sidewalls of the gate stack and a second spacer adjacent to the second fin. The method includes partially removing the first fin and the second fin. The method includes forming a first source/drain structure and a second source/drain structure in the first trench and the second trench respectively. A first ratio of a first height of the first merged portion to a second height of a first top surface of the first source/drain structure is greater than or equal to about 0.5.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip a first undoped layer overlies a substrate. A first barrier layer overlies the first undoped layer and has a first thickness. A first doped layer overlies the first barrier layer and is disposed laterally within an n-channel device region of the substrate. A second barrier layer overlies the first barrier layer and is disposed within a p-channel device region that is laterally adjacent to the n-channel device region. The second barrier layer has a second thickness that is greater than the first thickness. A second undoped layer overlies the second barrier layer. A second doped layer overlies the second undoped layer. The second undoped layer and the second doped layer are disposed within the p-channel device region.

Abstract: An OLED is disclosed whose emissive layer has a first host and an emitter, where the emitter is a phosphorescent metal complex or a delayed fluorescent emitter, where EH1T, the T1 triplet energy of the first host, is higher than EET, the T1 triplet energy of the emitter, where EET is at least 2.50 eV, where the LUMO energy of the first host is higher than the HOMO energy of the emitter, where the absolute value of the difference between the HOMO energy of the emitter and the LUMO energy of the first host is ?E1, where a??E1?EET?b; and where a?0.05 eV, and b?0.60 eV.

Abstract: A charging system includes a source terminal and a sink terminal. The control method of the charging system includes transmitting a bus voltage by the source terminal, determining whether the sink terminal has entered a sink attached state when the sink terminal receives the bus voltage, enabling a message transceiver of the sink terminal if the sink terminal has entered the sink attached state, transmitting a source message to the transceiver of the sink terminal by the source terminal, transmitting a request message to the source terminal by the message transceiver of the sink terminal while the source terminal transmits the source message, and continuing to enable a communication function for communicating with the sink terminal and continuing to transmit the bus voltage to the sink terminal by the source terminal when the source terminal receives the request message.

Abstract: A master-slave communication system for a single-phase to multi-phase AC power supply includes a master and a plurality of slaves that are connected in parallel and configured to supply single-phase to multi-phase AC power. The master includes a main communication control board and at least one phase communication control board. The main communication control board is in communication with the phase communication control board. The slaves each include at least one phase communication control board. The master and an adjacent one of the slaves as well as every adjacent two of the slaves are in communication with each other through a network transmission cable connected between the network connection ports of the same phase, thereby improving the communication transmission speed and reliability between the master and the slaves and further improving the output quality of the AC power supply.

Abstract: A master-slave communication system for a single-phase to multi-phase AC power supply includes a master and a plurality of slaves that are connected in parallel and configured to supply single-phase to multi-phase AC power. The master and the slaves each include a main communication control board and at least one phase communication control board. The main communication control board is in communication with the corresponding phase communication control board. The master and an adjacent one of the slaves as well as every adjacent two of the slaves are in communication with each other through a network transmission cable connected between the main communication control boards, thereby improving the communication transmission speed and reliability between the master and the slaves and further improving the output quality of the AC power supply.

Abstract: A circuit substrate includes a base substrate, a plurality of conductive vias, a first redistribution circuit structure, a second redistribution circuit structure and a semiconductor die. The plurality of conductive vias penetrate through the base substrate. The first redistribution circuit structure is located on the base substrate and connected to the plurality of conductive vias. The second redistribution circuit structure is located over the base substrate and electrically connected to the plurality of conductive vias, where the second redistribution circuit structure includes a plurality of conductive blocks, and at least one of the plurality of conductive blocks is electrically connected to two or more than two of the plurality of conductive vias, and where the base substrate is located between the first redistribution circuit structure and the second redistribution circuit structure.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.