Patents by Inventor Chun-Ming Chang

Chun-Ming Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240194678
    Abstract: A method includes depositing an epitaxial stack over a substrate, the epitaxial stack comprising alternating first semiconductor layers and second semiconductor layers, wherein the first semiconductor layers comprise a different semiconductor composition from that of the second semiconductor layers; forming a dielectric wall in the epitaxial stack; removing a first subset of the first semiconductor layers on a first side of the dielectric wall, while leaving a first subset of the second semiconductor layers on the first side of the dielectric wall; removing a second subset of the second semiconductor layers on a second side of the dielectric wall, while leaving a second subset of the first semiconductor layers on the second side of the dielectric wall; forming a first gate structure around the first subset of the second semiconductor layers; and forming a second gate structure around the second subset of the first semiconductor layers.
    Type: Application
    Filed: January 5, 2023
    Publication date: June 13, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Chih HOU, Chun-Jun LIN, Feng-Ming CHANG, Shu-Ning HSU
  • Publication number: 20240191411
    Abstract: A polypropylene fabric structure, a manufacturing method thereof, and a protective clothing including the polypropylene fabric structure are provided. The polypropylene fabric structure includes a polypropylene spunbond nonwoven fabric and a polypropylene meltblown nonwoven fabric. The polypropylene meltblown nonwoven fabric is directly bonded to the polypropylene spunbond nonwoven fabric. The polypropylene meltblown nonwoven fabric is made of a material including polypropylene having a melt flow index between 1700 g/10 min and 2000 g/10 min and a melting point between 155° C. and 165° C.
    Type: Application
    Filed: March 9, 2023
    Publication date: June 13, 2024
    Inventors: Kwang-Ming CHEN, Jung-Hung KAO, Kun-Pei HSIEH, Han-Chung LIAO, Chun-Tsung CHEN, Chao-Shun CHANG, Yao-Tsung HSIEH, Chia-Yi WEI
  • Patent number: 12009254
    Abstract: A method includes forming a first conductive feature on a substrate, forming a via that contacts the first conductive feature, the via comprising a conductive material, performing a Chemical Mechanical Polishing (CMP) process to a top surface of the via, depositing an Interlayer Dielectric (ILD) layer on the via, forming a trench within the ILD layer to expose the via, and filling the trench with a second conductive feature that contacts the via, the second conductive feature comprising a same material as the conductive material.
    Type: Grant
    Filed: May 16, 2022
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Yuan Chen, Shih-Chuan Chiu, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin
  • Publication number: 20240181127
    Abstract: A bone substitute composition includes a bone substitute matrix and a conditioning solution. The bone substitute matrix includes 85% to 98% by weight of alkaline calcium phosphate powder, 1% to 10% by weight of a polymer, and 1% to 5% by weight of a crosslinker. The conditioning solution includes 90% to 97% by weight of water, 1% to 5% by weight of a phosphate, and 1% to 5% by weight of a water-soluble acidic compound.
    Type: Application
    Filed: March 20, 2023
    Publication date: June 6, 2024
    Inventors: Kuan-Yu CHIU, Yen-Hao CHANG, Chun-Chieh TSENG, Tung-Lin TSAI, Chun-Ming CHEN, Yue-Jun WANG, Tzyy-Ker SUE
  • Publication number: 20240180492
    Abstract: A signal transmitting element is used to solve the problem that an additional surgery is required to remove the conventional vascular monitoring element after completing the detecting task. The signal transmitting element comprises a body made of a specific biodegradable material. The body includes a signal sensing portion including a structure configured to sense a blood flow information of a blood vessel surrounded and contacted by the body, thereby generating a blood vessel signal; and a signal transmitting portion coupled with the signal sensing portion for receiving the blood vessel signal and including a specific structure configured to convert the blood vessel signal into a transmission signal.
    Type: Application
    Filed: December 1, 2022
    Publication date: June 6, 2024
    Inventors: Chun-Chieh Tseng, Chun-Ming Chen, Tung-Lin Tsai, Yen-Hao Chang, Shu-Hung Huang, Sheng-Hua Wu, Yen-Hsin Kuo, Ping-Ruey Chou
  • Publication number: 20240184195
    Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.
    Type: Application
    Filed: January 12, 2024
    Publication date: June 6, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh TIEN, Cheng-Hsuen CHIANG, Chih-Ming CHEN, Cheng-Ming LIN, Yen-Wei HUANG, Hao-Ming CHANG, Kuo-Chin LIN, Kuan-Shien LEE
  • Patent number: 12002684
    Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.
    Type: Grant
    Filed: November 21, 2022
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
  • Publication number: 20240162094
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. The electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.
    Type: Application
    Filed: January 5, 2024
    Publication date: May 16, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Chuan CHIU, Jia-Chuan YOU, Chia-Hao CHANG, Chun-Yuan CHEN, Tien-Lu LIN, Yu-Ming LIN, Chih-Hao WANG
  • Publication number: 20240162313
    Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.
    Type: Application
    Filed: January 18, 2024
    Publication date: May 16, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Tung Yeh, Chun-Liang Hou, Wen-Jung Liao, Chun-Ming Chang, Yi-Shan Hsu, Ruey-Chyr Lee
  • Publication number: 20240145653
    Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.
    Type: Application
    Filed: May 12, 2023
    Publication date: May 2, 2024
    Applicant: HANNSTAR DISPLAY CORPORATION
    Inventors: Chun-I Chu, Yu-Chi Chiao, Yung-Li Huang, Hung-Ming Chang, Cheng-Yu Lin, Huan-Hsun Hsieh, CHeng-Pei Huang
  • Publication number: 20240136423
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Application
    Filed: December 25, 2023
    Publication date: April 25, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Patent number: 11967558
    Abstract: A wafer stack structure includes an interlayer, a first wafer, and a second wafer. The interlayer has a first surface and a second surface opposite to the first surface. The intermediate layer includes a dielectric material layer and a redistribution layer embedded in the dielectric material layer. The first wafer is disposed on the first surface of the interlayer. The second wafer is disposed on the second surface of the interlayer. The second wafer is electrically connected to the first wafer through the redistribution layer of the interlayer.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: April 23, 2024
    Assignees: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Shou-Zen Chang, Chun-Lin Lu, Jium-Ming Lin
  • Publication number: 20240128364
    Abstract: A semiconductor device includes a fin structure, a metal gate stack, a barrier structure and an epitaxial source/drain region. The fin structure is over a substrate. The metal gate stack is across the fin structure. The barrier structure is on opposite sides of the metal gate stack. The barrier structure comprises one or more passivation layers and one or more barrier layers, and the one or more passivation layers have a material different from a material of the one or more barrier layers. The epitaxial source/drain region is over the barrier structure.
    Type: Application
    Filed: March 27, 2023
    Publication date: April 18, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Ming LUNG, Chung-Ting KO, Ting-Hsiang CHANG, Sung-En LIN, Chi On CHUI
  • Publication number: 20240128353
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Application
    Filed: December 25, 2023
    Publication date: April 18, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Patent number: 11960253
    Abstract: A system and a method for parameter optimization with adaptive search space and a user interface using the same are provided. The system includes a data acquisition unit, an adaptive adjustment unit and an optimization search unit. The data acquisition unit obtains a set of executed values of several operating parameters and a target parameter. The adaptive adjustment unit includes a parameter space transformer and a search range definer. The parameter space transformer performs a space transformation on a parameter space of the operating parameters according to the executed values. The search range definer defines a parameter search range in a transformed parameter space based on the sets of the executed values. The optimization search unit takes the parameter search range as a limiting condition and takes optimizing the target parameter as a target to search for a set of recommended values of the operating parameters.
    Type: Grant
    Filed: December 28, 2020
    Date of Patent: April 16, 2024
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Po-Yu Huang, Chun-Fang Chen, Hong-Chi Ku, Te-Ming Chen, Chien-Liang Lai, Sen-Chia Chang
  • Publication number: 20240121523
    Abstract: A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.
    Type: Application
    Filed: October 7, 2022
    Publication date: April 11, 2024
    Inventors: Kai-Hao CHANG, Chun-Yuan WANG, Shin-Hong KUO, Zong-Ru TU, Po-Hsiang WANG, Chih-Ming WANG
  • Patent number: 11955515
    Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Chuan Chiu, Chia-Hao Chang, Cheng-Chi Chuang, Chih-Hao Wang, Huan-Chieh Su, Chun-Yuan Chen, Li-Zhen Yu, Yu-Ming Lin
  • Patent number: 11956929
    Abstract: A server device includes a casing, an electronic assembly, a cover, and a heat dissipation device. The electronic assembly includes a circuit board and at least one heat source. The circuit board is disposed on the casing, and the heat source is disposed on the circuit board. The cover is removably disposed on the casing. The heat dissipation device includes at least one air cooling heat exchanger and at least one liquid cooling heat exchanger. The air cooling heat exchanger is fixed on and thermally coupled with the heat source. The liquid cooling heat exchanger is fixed on the cover and thermally coupled with the air cooling heat exchanger.
    Type: Grant
    Filed: September 15, 2021
    Date of Patent: April 9, 2024
    Assignees: INVENTEC (PUDONG) TECHNOLOGY CORPORATION, INVENTEC CORPORATION
    Inventors: Chun-Ming Chang, Tai-Jung Sung
  • Patent number: 11944412
    Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: April 2, 2024
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Ying-Lun Chang, Ching-Sung Lin, Chi-Feng Huang, Yung-Lung Han, Chang-Yen Tsai, Wei-Ming Lee, Chun-Yi Kuo, Tsung-I Lin
  • Patent number: 11950427
    Abstract: A memory cell includes a transistor over a semiconductor substrate. The transistor includes a ferroelectric layer arranged along a sidewall of a word line. The ferroelectric layer includes a species with valence of 5, valence of 7, or a combination thereof. An oxide semiconductor layer is electrically coupled to a source line and a bit line. The ferroelectric layer is disposed between the oxide semiconductor layer and the word line.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Lu, Sai-Hooi Yeong, Bo-Feng Young, Yu-Ming Lin, Chih-Yu Chang