Abstract: A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is disposed in the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer. A passivation layer disposed on the portion of the metal layer and covering a sidewall of the patterned planarization layer to form a first passivation sidewall, wherein the seal is in contact with the first passivation sidewall.

Abstract: A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is exposed through the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer.

Abstract: A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is exposed through the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer.

Abstract: An operating method for dynamically adjusting a touch apparatus is disclosed herein. The touch apparatus includes a storage component and a touch component. The storage component is configured to store at least one application, and a plurality of weights of touch motion modes and touch motion modes corresponding to the application. The operating method includes determining whether execution of the application has started. When execution of the application has started, a plurality of touch motions corresponding to the executed application are received through the touch component. At least one of the weights of touch motion modes corresponding to the executed application is adjusted according to the touch motions. At least one of touch parameters is adjusted according to the weights of touch motion modes corresponding to the executed application.

Abstract: An operating method for dynamically adjusting a touch apparatus is disclosed herein. The touch apparatus includes a storage component and a touch component. The storage component is configured to store at least one application, and a plurality of weights of touch motion modes and touch motion modes corresponding to the application. The operating method includes determining whether execution of the application has started. When execution of the application has started, a plurality of touch motions corresponding to the executed application are received through the touch component. At least one of the weights of touch motion modes corresponding to the executed application is adjusted according to the touch motions. At least one of touch parameters is adjusted according to the weights of touch motion modes corresponding to the executed application.

Abstract: A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.

Abstract: A warning lamp has a base, a luminous module, a lampshade, and a reflector. The luminous module is mounted in the base and is located in a center segment of the base. The lampshade is combined with the base and has a lucent portion that is formed on a sidewall of the lampshade. The reflector is mounted in the lampshade and has a cone portion protruding toward the luminous module, a first surface facing the lucent portion, and a reflective portion formed on the first surface. The light emitted from the luminous module irradiates the reflective portion. The reflective portion reflects the light emitted from the luminous module to pass through the lucent portion. Accordingly, the warning lamp has a luminous effect in a circular form.

Abstract: A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Also a photolithography method that includes a step of providing a substantially opaque mask having N stepped rows of offset, substantially transparent, rectangular mask features, where N is an integer and N?2. The method also includes illuminating a photoresist layer located over an underlying material with dipole illumination through the substantially transparent, rectangular mask features in the substantially opaque mask to form 2N rows of exposed regions in the photoresist layer. The exposed regions have a substantially elliptical or substantially circular shape when viewed from above the photoresist layer.

Abstract: A handheld device includes a touch panel, a speaker, and a processor. The touch panel is operable to detect the touched area generated by an object touching the touch panel. The speaker is operable to provide sounds. The processor is connected to the touch panel and the speaker and controls the volume of the sounds provided by the speaker based on the touched area. The processor decreases the volume of the sounds when the value of the touched area is lower than a first predetermined value, and the processor increases the volume of the sounds when the value of the touched area is high than a second predetermined value. Furthermore, a method for controlling the handheld device is disclosed herein.

Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer.

Abstract: A system for displaying images including a display panel is provided. The display panel has a display area and a peripheral area. The display panel includes a metal layer disposed on a first substrate. A patterned planarization layer is disposed on the metal layer, having at least one opening corresponding to the peripheral area, wherein a portion of the metal layer is exposed through the opening. A second substrate is disposed opposite to the first substrate. A seal is disposed at the peripheral area and between the first and the second substrates, wherein the seal covers the metal layer through the opening of the patterned planarization layer.

Abstract: Bit line connections for non-volatile storage devices and methods for fabricating the same are disclosed. At least two different types of bit line connections may be used between memory cells and bit lines. The different types of bit line connections may be structurally different from each other as follows. One type of bit line connection may include a metal pad between an upper via and lower via. Another type of bit line connection may include an upper via and lower via, but does not include the metal pad. Three rows of bit line connections may be used to relax the pitch. For example, two rows of bit line connections on the outside may have the metal pad, whereas bit line connections in the middle row do not have the metal pad.

Abstract: A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.

Abstract: Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.

Abstract: A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Also a photolithography method that includes a step of providing a substantially opaque mask having N stepped rows of offset, substantially transparent, rectangular mask features, where N is an integer and N?2. The method also includes illuminating a photoresist layer located over an underlying material with dipole illumination through the substantially transparent, rectangular mask features in the substantially opaque mask to form 2N rows of exposed regions in the photoresist layer. The exposed regions have a substantially elliptical or substantially circular shape when viewed from above the photoresist layer.

Abstract: A photomask for exposure of a semiconductor wafer using dipole illumination and method of manufacturing the same is disclosed. A method of forming a pattern on a semiconductor using the photomask is also disclosed. The photomask may have an array of islands that are used for printing lines using dipole illumination. The photomask may have sub-resolution assist features (SRAF) to assist in printing the lines. The SRAF may include an array of holes.

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material surrounded by a protective material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a sacrificial material.

Abstract: A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.

Abstract: A microelectromechanical systems device having support structures formed of sacrificial material surrounded by a protective material. The microelectromechanical systems device includes a substrate having an electrode formed thereon. Another electrode is separated from the first electrode by a cavity and forms a movable layer, which is supported by support structures formed of a sacrificial material.

Abstract: A method of making a device includes forming a first hard mask layer over an underlying layer, forming first features over the first hard mask layer, forming a first spacer layer over the first features, etching the first spacer layer to form a first spacer pattern and to expose top of the first features, removing the first features, patterning the first hard mask using the first spacer pattern as a mask to form first hard mask features, removing the first spacer pattern. The method also includes forming second features over the first hard mask features, forming a second spacer layer over the second features, etching the second spacer layer to form a second spacer pattern and to expose top of the second features, removing the second features, etching the first hard mask features using the second spacer pattern as a mask to form second hard mask features, and etching at least part of the underlying layer using the second hard mask features as a mask.