Abstract: A method of making a device includes forming an underlying mask layer over an underlying layer, forming a first mask layer over the underlying mask layer, patterning the first mask layer to form first mask features, undercutting the underlying mask layer to form underlying mask features using the first mask features as a mask, removing the first mask features, and patterning the underlying layer using at least the underlying mask features as a mask.

Abstract: One embodiment of the invention provides a method of forming a plurality of contact holes, including forming a first feature and a second feature over an underlying material, forming sidewall spacers on the first and second features, removing the first and second features without removing the sidewall spacers, forming a cover mask at least partially exposing the sidewall spacers, and etching the underlying material using the cover mask and the sidewall spacers as a mask to form the plurality of contact holes.

Abstract: A photomask for exposure of a semiconductor wafer using dipole illumination and method of manufacturing the same is disclosed. A method of forming a pattern on a semiconductor using the photomask is also disclosed. The photomask may have an array of islands that are used for printing lines using dipole illumination. The photomask may have sub-resolution assist features (SRAF) to assist in printing the lines. The SRAF may include an array of holes.

Abstract: A power generating black mask comprising an anti-reflection layer deposited over a substrate, a first electrode layer deposited over the anti-reflection layer, a semi-conductor layer deposited over the first electrode layer and a second electrode layer deposited over the semi-conductor layer.

Abstract: Methods and apparatus for providing lighting in a display are provided. In one embodiment, a microelectromechanical system (MEMS) is provided that includes a transparent substrate and a plurality of interferometric modulators. The interferometric modulators include an optical stack coupled to the transparent substrate, a reflective layer over the optical stack, and one or more posts to support the reflective layer and to provide a path for light from a backlight for lighting the display.

Abstract: A power generating black mask comprising an anti-reflection layer deposited over a substrate, a first electrode layer deposited over the anti-reflection layer, a semi-conductor layer deposited over the first electrode layer and a second electrode layer deposited over the semi-conductor layer.

Abstract: A thin black mask is created using a single mask process. A dielectric layer is deposited over a substrate. An absorber layer is deposited over the dielectric layer and a reflector layer is deposited over the absorber layer. The absorber layer and the reflector layer are patterned using a single mask process.

Abstract: Methods and apparatus for providing lighting in a display are provided. In one embodiment, a microelectromechanical system (MEMS) is provided that includes a transparent substrate and a plurality of interferometric modulators. The interferometric modulators include an optical stack coupled to the transparent substrate, a reflective layer over the optical stack, and one or more posts to support the reflective layer and to provide a path for light from a backlight for lighting the display.

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract: Bit line connections for non-volatile storage devices and methods for fabricating the same are disclosed. At least two different types of bit line connections may be used between memory cells and bit lines. The different types of bit line connections may be structurally different from each other as follows. One type of bit line connection may include a metal pad between an upper via and lower via. Another type of bit line connection may include an upper via and lower via, but does not include the metal pad. Three rows of bit line connections may be used to relax the pitch. For example, two rows of bit line connections on the outside may have the metal pad, whereas bit line connections in the middle row do not have the metal pad.

Abstract: Methods for forming patterns having triple the line frequency of a first pattern using only a single spacer are disclosed. For example, the first pattern is formed in a first and a second material using a lithographic process. Sidewall spacers are formed from a third material adjacent to exposed sidewalls of features in the second material. The width of the features in the first pattern in the first material is reduced. For example, the width is reduced to about the target width of features in a final pattern. The width of features in the first pattern in the second material is reduced using remaining portions of the first material as a mask. A second pattern is formed based on remaining portions of the second material and the sidewall spacers. The features in the second pattern may be lines having about ? the width of lines in the first pattern.

Abstract: One embodiment of the invention provides a method of forming a plurality of contact holes, including forming a first feature and a second feature over an underlying material, forming sidewall spacers on the first and second features, removing the first and second features without removing the sidewall spacers, forming a cover mask at least partially exposing the sidewall spacers, and etching the underlying material using the cover mask and the sidewall spacers as a mask to form the plurality of contact holes.

Abstract: A method of making a device is disclosed including: forming a first hard mask layer over an underlying layer; forming a first imprint resist layer over the underlying layer; forming first features over the first hard mask layer by bringing a first imprint template in contact with the first imprint resist layer; forming a first spacer layer over the first features; etching the first spacer layer to form a first spacer pattern and to expose top of the first features; removing the first features; patterning the first hard mask, using the first spacer pattern as a mask, to form first hard mask features; and etching at least part of the underlying layer using the first hard mask features as a mask.

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer.

Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer.

Abstract: A method of making a semiconductor device includes forming at least one device layer over a substrate, forming at least two spaced apart features over the at least one device layer, forming sidewall spacers on the at least two features, selectively removing the spaced apart features, filling a space between a first sidewall spacer and a second sidewall spacer with a filler feature, selectively removing the sidewall spacers to leave a plurality of the filler features spaced apart from each other, and etching the at least one device layer using the filler feature as a mask.

Abstract: A method of making a semiconductor device includes forming at least one device layer over a substrate, forming a plurality of spaced apart first features over the device layer, where each three adjacent first features form an equilateral triangle, forming sidewall spacers on the first features, filling a space between the sidewall spacers with a plurality of filler features, selectively removing the sidewall spacers, and etching the at least one device layer using at least the plurality of filler features as a mask. A device contains a plurality of bottom electrodes located over a substrate, a plurality of spaced apart pillars over the plurality of bottom electrodes, and a plurality of upper electrodes contacting the plurality of pillars. Each three adjacent pillars form an equilateral triangle, and each pillar comprises a semiconductor device.

Abstract: Certain MEMS devices include layers patterned to have tapered edges. One method for forming layers having tapered edges includes the use of an etch leading layer. Another method for forming layers having tapered edges includes the deposition of a layer in which the upper portion is etchable at a faster rate than the lower portion. Another method for forming layers having tapered edges includes the use of multiple iterative etches. Another method for forming layers having tapered edges includes the use of a liftoff mask layer having an aperture including a negative angle, such that a layer can be deposited over the liftoff mask layer and the mask layer removed, leaving a structure having tapered edges.

Abstract: Embodiments of MEMS devices include support structures having substantially vertical sidewalls. Certain support structures are formed through deposition of self-planarizing materials or via a plating process. Other support structures are formed via a spacer etch. Other MEMS devices include support structures at least partially underlying a movable layer, where the portions of the support structures underlying the movable layer include a convex sidewall. In further embodiments, a portion of the support structure extends through an aperture in the movable layer and over at least a portion of the movable layer.