Abstract: An optical measuring device is provided. An actuator of a reference mirror set drives a reference mirror to move back and forth at a scan velocity. A first light source module transmits a first light beam to an optical coupling module transmitting two parts of the first light beam respectively to an examinee object and the reference mirror set. The first light beam then is reflected by the examinee object and reference mirror set and then transmitted to the optical coupling module and the processing unit. The second light source module transmits a second light beam to the examinee object. Then the second light beam is reflected and then transmitted to the second sensing unit. The second sensing unit provides a sensing signal to the processing unit which accordingly provides a value of the relative velocity. The thickness is calculated according to the relative velocity and the scan velocity.

Abstract: A method for manufacturing a machine-laminated basketball comprises the steps of: providing a winding on a bladder; providing a carcass; forming a first adhesive layer on the carcass, drying the first adhesive layer; providing a second adhesive layer on each of multiple ball covers, drying the second adhesive layer; arranging the ball covers in two hemisphere molds; placing the carcass in one of the two hemisphere molds; closing up the two hemisphere molds; inflating the carcass to obtain a pre-laminated ball; vulcanizing the pre-laminated ball to obtain a vulcanized laminated ball; surface finishing the vulcanized laminated ball, and painting strips to obtain the machine-laminated basketball. Accordingly, the ball covers of the basketball are firmly laminated to the carcass. Basketballs made by the method have a unified rebound and appearance can be varied depending on demand. The method has an improved production efficiency.

Abstract: A method for manufacturing a cup-shaped striking faceplate of a wood golf club head includes preparing a heat-compressing mold having a mold cavity, preparing a base plate having a first surface and a second surface opposite to the first surface, preparing a thermally expanding sheet, placing the base plate in the mold cavity by adhering the first surface of the base plate to an inner surface of the mold cavity, placing the thermally expanding sheet on the second surface of the base plate, and compressing the base plate and the thermally expanding sheet using the heat-compressing mold to form the base plate as the cup-shaped striking faceplate under heat compression. Thus, the cup-shaped striking faceplate is obtained. The cup-shaped striking faceplate includes a bottom wall and a lateral wall having a height of 5 to 40 mm.

Abstract: A fabrication method of a pixel structure and a pixel structure are provided. A first patterned metal layer including scan lines and a gate is formed on a substrate. A first insulation layer, a semiconductor layer, an etching stop pattern and a metal layer are formed sequentially on the first patterned metal layer. The metal layer and the semiconductor layer are patterned to form a second patterned metal layer and a patterned semiconductor layer. The second patterned metal layer includes data lines, a source and a drain. The patterned semiconductor layer includes a first semiconductor pattern completely overlapping the second patterned metal layer and a second semiconductor pattern without overlapping the second patterned metal layer, wherein the second semiconductor pattern includes a channel pattern and a marginal pattern. The channel pattern is between the source and the drain and the marginal pattern surrounds the first semiconductor pattern.

Abstract: An optical apparatus includes a light source, an optical coupling module, a reference light reflection module, and a data processing module. The light source provides an incident light. The optical coupling module divides the incident light into a reference light and a detection light emitting to the reference light reflection module and the object respectively. The reference light reflection module reflects the reference light and rapidly change the optical path of the reference light. The optical coupling module receives a first reflected light generated by the reference light reflection module reflecting the reference light and a second reflected light generated by the object reflecting the detection light and it interferes the first reflected light and second reflected light to generate a light interference signal. The data processing module receives and analyzes the light interference signal to obtain an optical detection result related to the object.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate, a channel layer, a gate insulation layer, a source, a drain and a silicon-aluminum-oxide layer. The gate is disposed on a substrate. The channel layer is disposed on the substrate. The channel layer overlaps the gate. The gate insulation layer is disposed between the gate and the channel layer. The source and the drain are disposed on two sides of the channel layer. The silicon-aluminum-oxide layer is disposed on the substrate and covers the source, the drain and the channel layer.

Abstract: The present invention provides a chemical compound having the structure being one selected from a group consisting of wherein R1 is one selected from a group consisting of COOCH3, COOCH2Ph, CONHCH(CH3)2 and CONHC6H5, R2 is one selected from a group consisting of H, CH3 and CH(CH3)2, R3 is one selected from a group consisting of H, CH3, CH(CH3)2 and CH2Ph, and R4 is one of CH(CH3)2 and C6H5.

Abstract: A fabrication method of a pixel structure and a pixel structure are provided. A first patterned metal layer including scan lines and a gate is formed on a substrate. A first insulation layer, a semiconductor layer, an etching stop pattern and a metal layer are formed sequentially on the first patterned metal layer. The metal layer and the semiconductor layer are patterned to form a second patterned metal layer and a patterned semiconductor layer. The second patterned metal layer includes data lines, a source and a drain. The patterned semiconductor layer includes a first semiconductor pattern completely overlapping the second patterned metal layer and a second semiconductor pattern without overlapping the second patterned metal layer, wherein the second semiconductor pattern includes a channel pattern and a marginal pattern. The channel pattern is between the source and the drain and the marginal pattern surrounds the first semiconductor pattern.

Abstract: A heat dissipating apparatus includes a frame, an elastic body, a magnetic member and a coil. The frame has an opening. The elastic body is disposed on the frame, and the frame and the elastic body define a space. The magnetic member is located corresponding to the space and disposed at one side of the elastic body. The coil is located corresponding to the periphery of the space and disposed on the frame. An electronic device with the heat dissipating apparatus is also disclosed.

Abstract: A fabrication method of a pixel structure and a pixel structure are provided. A first patterned metal layer including scan lines and a gate is formed on a substrate. A first insulation layer, a semiconductor layer, an etching stop pattern and a metal layer are formed sequentially on the first patterned metal layer. The metal layer and the semiconductor layer are patterned to form a second patterned metal layer and a patterned semiconductor layer. The second patterned metal layer includes data lines, a source and a drain. The patterned semiconductor layer includes a first semiconductor pattern completely overlapping the second patterned metal layer and a second semiconductor pattern without overlapping the second patterned metal layer, wherein the second semiconductor pattern includes a channel pattern and a marginal pattern. The channel pattern is between the source and the drain and the marginal pattern surrounds the first semiconductor pattern.

Abstract: An image-recognition assisting method includes the steps of using an examination instrument to generate an image having a split-image area formed thereon; setting a region-of-interest (ROI) around the split-image area of the generated image; performing a pixel luminance addition processing on the ROI, so that all pixels in the ROI have increased luminance contrast; and performing a contrast correction on the ROI having increased luminance contrast, so that the luminance contrast between the split-image area and the area surrounding the split-image area in the ROI is further increased. The image-recognition assisting method optimizes the image generated by the conventional ophthalmic examination instrument, such as a fundus camera, to increase the sharpness and the luminance contrast of the image output by the fundus camera, so that an examiner can easily recognize two offset rectangular image parts in the split-image area and align them with each other to focus the examination instrument.

Abstract: A thin-film transistor (TFT) includes a gate electrode, a gate dielectric layer, a semiconductor layer, source/drain electrodes, a passivation layer and a protection layer. The gate electrode is disposed on a substrate. The gate dielectric layer covers the gate electrode and the substrate. The semiconductor layer is disposed on the gate dielectric layer and above the gate electrode. The semiconductor layer has a channel region disposed above the gate electrode and source/drain regions disposed at both sides of the channel region. The source/drain electrodes are disposed on the source/drain regions of the semiconductor layer and each has a barrier layer disposed on the source/drain regions of the semiconductor layer and a conductive layer disposed on the barrier layer. The passivation layer is disposed over the surface of the source/drain electrodes. The protection layer is disposed over the substrate, the passivation layer, and the channel region of the semiconductor layer.

Abstract: Several ursolic acid derivatives and pharmaceutical compositions thereof are provided. The ursolic acid derivatives and the pharmaceutical compositions thereof have at least one of an anticancer and an anti-inflammatory effects. A method for increasing a reactive oxygen species in a cell is also provided. The method comprises a step of providing the cell with a pharmaceutical composition including an ursolic acid derivative.

Abstract: An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.

Abstract: An active device, a driving circuit structure, and a display panel are provided. The active device includes a gate, a gate insulation layer covering the gate, a semiconductor layer disposed above the gate, an etching stop layer disposed on the gate insulation layer and the semiconductor layer, a source, and a drain. The gate forms a meandering pattern on a substrate. The semiconductor layer has an area substantially defining a device region where the active device is. The etching stop layer has a first contact opening and a second contact opening. The first contact opening and the second contact opening separated from each other and both exposing the semiconductor layer. The source and the drain separated from each other are disposed on the etching stop layer and in contact with the semiconductor layer through the first contact opening and the second contact opening, respectively.

Abstract: The present invention is correlated with a derivative of 18?-glycyrrhetinic acid apt to suppressing cancer cells, which is selected from a group comprising of structure I and structure II: wherein residue R1 is selected from one of CH3 and CH2C6H5, residue R2 is selected from one of COOCH3, COOCH2CH3, COOCH(CH3)2, CONHCH2CH3, CONHCH2CH2CH3, and CONHCH2(CH3)2, and residue R3 is selected from one of COOCH2CH3, COOCH(CH3)2, CONHCH2CH3, CONHCH2CH2CH3, and CONHCH2(CH3)2.

Abstract: A two-layer leak-proof ball comprises a sheath layer (1), an intermediate body layer (2), a winding yarn layer (3), an inner body layer (4) and a two-layer protective layer (5). The intermediate body layer (2), the winding yarn layer (3), the inner body layer (4) and the two-layer protective layer (5) are tightly set successively at the inside of the sheath layer (1). Also disclosed is the manufacturing method of the two-layer protective layer (5) of the two-layer leak-proof ball. High air-sealed bromide butyl mucilage is injected at the inside of the inner body layer (4), and vulcanized at low temperature, thus a glue film is formed at the inner wall of the inner body layer (4). The inner bag of the two-layer leak-proof ball has high tightness and long service life.

Abstract: Provided is a leak-free American football, which has a polyurethane foam having a shape of an American football; a covering formed on an exterior surface of the polyurethane foam and having a seam; multiple pairs of lacing holes formed in the covering along two opposite sides of the seam, and a lace passing through the multiple pairs of the lacing holes to close the seam, such that the polyurethane foam is covered by the covering and the lace. Since the polyurethane foam is solid and elastic, the leak-free American football can maintain a desired size, shape and bounce without the need for inflation, thereby improving the stability and durability.

Abstract: An image-recognition assisting method includes the steps of using an examination instrument to generate an image having a split-image area formed thereon; setting a region-of-interest (ROI) around the split-image area of the generated image; performing a pixel luminance addition processing on the ROI, so that all pixels in the ROI have increased luminance contrast; and performing a contrast correction on the ROI having increased luminance contrast, so that the luminance contrast between the split-image area and the area surrounding the split-image area in the ROI is further increased. The image-recognition assisting method optimizes the image generated by the conventional ophthalmic examination instrument, such as a fundus camera, to increase the sharpness and the luminance contrast of the image output by the fundus camera, so that an examiner can easily recognize two offset rectangular image parts in the split-image area and align them with each other to focus the examination instrument.

Abstract: An active device, a driving circuit structure, and a display panel are provided. The active device includes a gate, a gate insulation layer covering the gate, a semiconductor layer disposed above the gate, an etching stop layer disposed on the gate insulation layer and the semiconductor layer, a source, and a drain. The gate forms a meandering pattern on a substrate. The semiconductor layer has an area substantially defining a device region where the active device is. The etching stop layer has a first contact opening and a second contact opening. The first contact opening and the second contact opening separated from each other and both exposing the semiconductor layer. The source and the drain separated from each other are disposed on the etching stop layer and in contact with the semiconductor layer through the first contact opening and the second contact opening, respectively.