Abstract: A compound including a first ligand LA of Formula I, is disclosed. In Formula I, ring B is a 5- or 6-membered ring; X1, X2, and X3 are each CRA or N; R is a 5- or 6-membered carbocyclic or heterocyclic ring, which can be further fused or substituted; and (1) when ring B is an unfused 6-membered ring, X1 and X2 are N, and X3 is C; and (2) when ring B is a fused 6-membered ring, ring B has the structure of Formula II, In this structure, the wavy line indicates the point of connection to ring A; Q1 to Q6 are each C or N; and, when proviso (2) applies, (I) at least one of X1, X2, and X3 is N; or (II) R is two or more fused or unfused 5- or 6-membered carbocyclic or heterocyclic rings, or (III) at least ring A or R is substituted with a partially or fully deuterated alkyl or partially or fully deuterated cycloalkyl group.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, and a plurality of field plates. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure in a first direction respectively. The field plates are disposed on the semiconductor substrate. Each of the field plates is partly located above the gate structure and partly located between the gate structure and the drain region. The gate structure is electrically connected with at least one of the field plates, and the source region is electrically connected with at least one of the field plates.

Abstract: The present invention provides bispecific antigen-binding molecules characterized by comprising a first and a second domain, each binding to any of CS1, BCMA, CD20, CD22, FLT3, CD123, CLL1, MSLN, CDH3 or EpCAM, a third domain binding to an extracellular epitope of the human and the Macaca CD3? chain and optionally a fourth domain, which is a Fc modality. Moreover, the invention provides a polynucleotide, encoding the antigen-binding molecule, a vector comprising this polynucleotide, host cells, expressing the construct and a pharmaceutical composition comprising the same.

Abstract: A use of Magnolia figo extract in the manufacture of a compound for inhibiting growth of lung cancer cells.

Abstract: An air cleaner capable of removing bacteria and viruses. The air cleaner includes: a main body including a suction hole through which air is introduced and a discharge hole through which air is discharged; an ultraviolet (UV) irradiation device disposed between the suction hole and the discharge hole, and including a UV light emitting diode (LED) configured to transmit ultraviolet rays toward the discharge hole; a photocatalyst filter including a photocatalyst provided to generate active oxygen by reacting with the UV rays transmitted from the UV LED, and disposed between the UV irradiation device and the discharge hole; and a light blocking member disposed between the UV LED and the suction hole to prevent the UV rays transmitted from the UV LED from being emitted to an outside of the main body through the suction hole.

Abstract: A wafer stack structure includes an interlayer, a first wafer, and a second wafer. The interlayer has a first surface and a second surface opposite to the first surface. The intermediate layer includes a dielectric material layer and a redistribution layer embedded in the dielectric material layer. The first wafer is disposed on the first surface of the interlayer. The second wafer is disposed on the second surface of the interlayer. The second wafer is electrically connected to the first wafer through the redistribution layer of the interlayer.

Abstract: An optical imaging system includes six lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element and a sixth lens element. Each of the six lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The first lens element has negative refractive power, and the object-side surface of the first lens element is concave in a paraxial region thereof. The image-side surface of the second lens element is concave in a paraxial region thereof. The fourth lens element has negative refractive power. The image-side surface of the sixth lens element is concave in a paraxial region thereof and has at least one critical point in an off-axis region thereof.

Abstract: A semiconductor isolation structure includes a silicon-on-insulator wafer, a first deep trench isolation structure and a second deep trench isolation structure. The silicon-on-insulator wafer includes a semiconductor substrate, a buried insulation layer disposed on the semiconductor substrate, and a semiconductor layer disposed on the buried insulation layer. The semiconductor layer has a functional region. The first deep trench isolation structure penetrates the semiconductor layer and the buried insulation layer, and surrounds the functional region. The second deep trench isolation structure penetrates semiconductor layer and the buried insulation layer, and surrounds the first deep trench isolation structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. The first conductive via structure has a first substantially strip shape in a top view of the first conductive via structure.

Abstract: A virtual hardware management device is provided, which includes a memory and a processing unit. The processing unit is configured for executing the multiple instructions to perform the following operations: when detecting that the load rate is more than the high level threshold, comparing respective priorities of multiple processing flows; selecting at least one of the multiple processing flows to perform at least one of analysis frequency reduction processing, detection reduction processing, or flow pause processing according to a comparing result until the load rate is not more than the high level threshold; and generating respective resource allocation ratio of multiple operators in the multiple processing flows according to respective resource weights of the multiple operators, and using a virtual hardware unit to execute the multiple operators according to the multiple resource allocation ratios.

Abstract: A sense enable circuit for enabling a sense amplifier is provided. The sense enable circuit includes a signal generator circuit, a group of reference memory cells and a control circuit. The signal generator circuit is configured to generate a sense amplifier enable signal according to a trigger signal. The sense amplifier is enabled by the sense amplifier enable signal to sense data stored in a memory cell. Each reference memory cell is coupled to a reference wordline and a reference bitline. The reference wordline is activated in response to activation of a wordline coupled to the memory cell. The reference memory cell is configured to, in response to activation of the reference wordline, couple a first reference signal to the reference bitline. The control circuit is configured to adjust a signal level of the reference bitline, and generate the trigger signal according to the signal level of the reference bitline.

Abstract: A black light-shielding photosensitive resin composition, a black matrix, a black light-shielding film, a frame, and a filling material for a splicing area are provided. The black light-shielding photosensitive resin composition includes a resin (A), a pigment (B), a monomer (C), an initiator (D), and a solvent (E). The resin (A) includes an epoxy resin (A-1) and a resin (A-2) having an ethylenic unsaturated functional group. The pigment (B) includes black particles (B-1) and hollow particles (B-2).

Abstract: An electronic darting system, a processing method for an electronic darts game, and a dartboard device are provided. The electronic darting system includes a dartboard device, a tip unit, and an image providing device. The dartboard device includes a dartboard case, a plurality of induction circuits, and a control circuit. The dartboard case includes a board surface. The plurality of induction circuits are disposed on the board surface, and the plurality of induction circuits are intersecting with each other to form a plurality of induction areas of a plurality of target areas of the board surface. The image providing device provides a plurality of images onto the board surface of the dartboard case.

Abstract: The invention relates to a composition for enhancing plant growth. The composition includes auxin, cytokinin, choline chloride, and ?-aminobutyric acid (GABA). The invention also relates to a method for enhancing plant growth.

Abstract: A method and apparatus are disclosed from the perspective of a second User Equipment (UE) for performing sidelink communication. In one embodiment, the method includes the second UE being (pre-)configured with a sidelink resource pool in a carrier or cell, wherein a DRX (Discontinuous Reception) pattern is associated to the sidelink resource pool. The method also includes the second UE selecting a resource in the sidelink resource pool based on the DRX pattern, wherein a specific message becomes available for transmission in the second UE. The method further includes the second UE transmitting the specific message on the resource to a plurality of UEs comprising at least a first UE.

Abstract: A key structure includes a base and a linkage mechanism. The linkage mechanism includes a plurality of linking members movably connected to each other. The plurality of linking members includes at least two linking members rotatably positioned on the base, respectively. When a pressing force is applied to the linkage mechanism, the plurality of linking members move associated with each other to restrict a rotation range of the plurality of linking members with respect to the base.

Abstract: A method of forming a semiconductor device includes forming a photoresist over a target layer, where the target layer includes a substrate. The photoresist is patterned to form a patterned photoresist. Scum remains between portions of the patterned photoresist. The substrate is tilted relative to a direction of propagation of an ion beam. An ion treatment is performed on the scum. A pattern of the patterned photoresist is transferred to the target layer.

Abstract: Examples of a holding device for retaining an installable component in a chassis of a computing device are described. In one example, the holding device may comprise a longitudinally extending first arm, and a movably coupled second arm. The holding device may further comprise a first engaging portion at first end of the holding device, and a second engaging portion at the second end of the holding device. The engaging portions may couple the holding device to the chassis of the computing device. Furthermore, the holding device may comprise a gripping member. The gripping member is to securely retain the installable component within the chassis of the computing device, and is movable across the length of the holding device.

Abstract: Methods for determining suitability of Czochralski growth conditions to produce silicon substrates for epitaxy. The methods involve evaluating substrates sliced from ingots grown under different growth conditions (e.g., impurity profiles) by imaging the wafer by infrared depolarization. An infrared depolarization parameter is generated for each epitaxial wafer. The parameters may be compared to determine which growth conditions are well-suited to produce substrates for epitaxial and/or post-epi heat treatments.

Abstract: The present disclosure relates to a refrigerator, and more particularly, to a refrigerator including one or more modules having a plurality of rooms. An embodiment of the present disclosure may provide a refrigerator including a plurality of refrigerator modules, wherein the refrigerator modules include: a cabinet forming an outer shape and having a plurality of storage chambers therein; doors provided in the cabinet and provided for each storage chamber; a radiant cooling plate which forms the rear wall of the storage chambers, and is provided to block the communication of air between the inner portions of the storage chambers and cool the inner portions of the storage chambers through radiant cooling; a refrigerant pipe flow path located at the rear side of the radiant cooling plate to exchange heat with the radiant cooling plate; and a machine room which discharges the refrigerant to the refrigerant pipe flow path and sucks the refrigerant having exchanged heat with the radiant cooling plate.