Abstract: A method for an STA to transmit or receive a frame in a WLAN, according to one embodiment of the present invention, comprises the steps of: receiving a first HARQ trigger frame that triggers transmission of an A-PHDU into which PHDUs that are PHY data transmission units for a HARQ process are combined; transmitting at least one PHDU within the A-PHDU on the basis of the first HARQ trigger frame at the timing designated for the STA; and retransmitting the at least one PHDU or transmitting a new PHDU according to reception of a second HARQ trigger frame, wherein the first HARQ trigger frame includes timing offset information between the STA and another STA transmitting the PHDU within the A-PHDU, and the STA may determine the timing designated for the STA by using the timing offset information.

Abstract: The present invention relates to a positive electrode active material for a lithium secondary battery which includes a lithium composite transition metal oxide including nickel (Ni), cobalt (Co), and manganese (Mn), wherein a portion of nickel (Ni) sites of the lithium composite transition metal oxide is substituted with tungsten (W), and an amount of a lithium tungsten oxide remaining on surfaces of lithium composite transition metal oxide particles is 1,000 ppm or less.

Abstract: A dimmable lamp tube is provided, which includes a first lamp head, a second lamp head and a lamp tube body. The first lamp head has a brightness adjustment switch. The second lamp head has a power adjustment switch. The lamp tube body includes a circuit board and a plurality of light-emitting elements. The light-emitting elements are disposed on the circuit board. The circuit board includes a brightness adjustment switch connection terminal and a power adjustment switch connection terminal. The brightness adjustment switch is connected to the brightness adjustment switch connection terminal and the power adjustment switch is connected to the power adjustment switch connection terminal.

Abstract: In a gate last metal gate process for forming a transistor, a dielectric layer is formed over an intermediate transistor structure, the intermediate structure including a dummy gate electrode, typically formed of polysilicon. Various processes, such as patterning the polysilicon, planarizing top layers of the structure, and the like can remove top portions of the dielectric layer, which can result in decreased control of gate height when a metal gate is formed in place of the dummy gate electrode, decreased control of fin height for finFETs, and the like. Increasing the resistance of the dielectric layer to attack from these processes, such as by implanting silicon or the like into the dielectric layer before such other processes are performed, results in less removal of the top surface, and hence improved control of the resulting structure dimensions and performance.

Abstract: A physiological status evaluation method and a physiological status evaluation apparatus are provided. The method includes the following: obtaining original electrocardiogram data of a user by an electrocardiogram detection apparatus; converting the original electrocardiogram data into digital integration data; obtaining a plurality of physiological characteristic parameters according to the digital integration data; filtering the physiological characteristic parameters for at least one notable characteristic parameter through at least one filter model, where decision importance of the at least one notable characteristic parameter in a decision process of the at least one filter model is greater than a threshold; building a prediction model according to the at least one notable characteristic parameter; and evaluating a physiological status of the user through the prediction model.

Abstract: A semiconductor structure includes: a channel layer; an active layer over the channel layer, wherein the active layer is configured to form a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer; a gate electrode over a top surface of the active layer; and a source/drain electrode over the top surface of the active layer; wherein the active layer includes a first layer and a second layer sequentially disposed therein from the top surface to a bottom surface of the active layer, and the first layer possesses a higher aluminum (Al) atom concentration compared to the second layer. An HEMT structure and an associated method are also disclosed.

Abstract: A package carrier includes a substrate, at least one interposer disposed in at least one opening of the substrate, a conductive structure layer, a first build-up structure, and a second build-up structure. The interposer includes a glass substrate, at least one conductive via, at least one first pad, and at least one second pad. The conductive via passes through the glass substrate, and the first and the second pads are disposed respectively on an upper surface and a lower surface of the glass substrate opposite to each other and are connected to opposite ends of the conductive via. The conductive structure layer is disposed on the substrate and is structurally and electrically connected to the first and the second pads. The first and the second build-up structures are disposed respectively on the first and the second surfaces of the substrate and are electrically connected to the conductive structure layer.

Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.

Abstract: Provided is a washing machine having a printed circuit board (PCB) assembly. The washing machine includes a cabinet forming an external appearance thereof, a top cover coupled to an upper side of the cabinet, and a PCB assembly provided in the cabinet and configured to control the washing machine, wherein the PCB assemble includes a frame in which a PCB is accommodated and a cover covering the PCB, and the cover includes a heat dissipation path configured to dissipate heat of the PCB and a water inflow preventer configured to prevent water from being introduced into the heat dissipation path.

Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes a first gate structure disposed over a first backside dielectric feature, a second gate structure disposed over a second backside dielectric feature, a gate cut feature extending continuously from between the first gate structure and the second gate structure to between the first backside dielectric feature and the second backside dielectric feature, and a liner disposed between the gate cut feature and the first backside dielectric feature and between the gate cut feature and the second backside dielectric feature.

Abstract: A method and apparatus are disclosed. In an example from the perspective of a User Equipment (UE), a Slot Format Indication (SFI) is received within a first Channel Occupancy Time (COT) of a serving cell. The SFI is indicative of one or more slot formats of one or more slots of the serving cell. A first signal indicative of an ending position of the first COT is received. A beginning of at least one slot of the one or more slots is after the ending position. The UE determines whether to apply a slot format, of a slot of the one or more slots, to the slot based upon whether the slot is within the first COT, wherein the slot format of the slot is indicated by the SFI.

Abstract: A semiconductor device includes a substrate, a plurality of insulators, a liner structure and a gate stack. The substrate has fins and trenches in between the fins. The insulators are disposed within the trenches of the substrate. The liner structure is disposed on the plurality of insulators and across the fins, wherein the liner structure comprises sidewall portions and a cap portion, the sidewall portions is covering sidewalls of the fins, the cap portion is covering a top surface of the fins and joined with the sidewall portions, and a maximum thickness T1 of the cap portion is greater than a thickness T2 of the sidewall portions. The gate stack is disposed on the liner structure and across the fins.

Abstract: A cover for a door frame includes: a sealing member mounted to the door frame; and an inner cover covering at least a portion of the sealing member and at least a portion of the door frame, where a portion of the corner cover is embedded in the sealing member so that the inner cover and the sealing member form a unitary one-piece structure.

Abstract: The present disclosure relates an integrated chip. The integrated chip includes a polysilicon layer arranged on an upper surface of a base substrate. A dielectric layer is arranged over the polysilicon layer, and an active semiconductor layer is arranged over the dielectric layer. A semiconductor material is arranged vertically on the upper surface of the base substrate and laterally beside the active semiconductor layer.

Abstract: Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.

Abstract: A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

Abstract: The technology described herein is directed to regulated synthetic gene expression systems. In one aspect described herein are synthetic transcription factors (synTFs) comprising a DNA binding domain, a transcriptional effector domain, and a regulator protein. In other aspects described herein are gene expression systems comprising said synTFs and methods of treating diseases and disorders using said synTFs.

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate, an S/D feature disposed over the semiconductor fin, and a first dielectric fin and a second dielectric fin disposed over the substrate, where the semiconductor fin is disposed between the first dielectric fin and the second dielectric fin, where a first air gap is enclosed by a first sidewall of the epitaxial S/D feature and the first dielectric fin, and where a second air gap is enclosed by a second sidewall of the epitaxial S/D feature and the second dielectric fin.