Abstract: A method includes: receiving a composite substrate including a first region and a second region, the composite substrate including a semiconductor substrate and an insulator layer over the semiconductor substrate; forming a trench through the insulator layer, the trench exposing a surface of the semiconductor substrate in the first region; growing an initial epitaxial layer in the trench and over an upper surface of the second region; thickening the initial epitaxial layer to form an epitaxial layer; forming a transistor layer over the epitaxial layer, the transistor layer including a first transistor and a second transistor in the first region and the second region, respectively; and forming an interconnect layer over the transistor layer and electrically coupling the first transistor to the second transistor.

Abstract: A method includes: receiving a composite substrate including a first region and a second region, the composite substrate comprising a semiconductor substrate and an insulator layer over the semiconductor substrate; bonding a silicon layer to the composite substrate; depositing a capping layer over the silicon layer; forming a trench through the capping layer, the silicon layer and the insulator layer, the trench exposing a surface of the semiconductor substrate in the first region; growing an initial epitaxial layer in the trench; removing the capping layer to form an epitaxial layer from the silicon layer and the initial epitaxial layer; forming a transistor layer over the epitaxial layer, the transistor layer including a first transistor and a second transistor in the first region and the second region, respectively; and forming an interconnect layer over the transistor layer and electrically coupling the first transistor to the second transistor.

Abstract: The invention provides a vaginal dilator including a spiral body and a control rod, wherein the spiral body includes a first surface, a second surface, a buckling edge, a fixing seat and a plurality of positioning seats. The buckling edge is adjacent to the first surface and the second surface. The fixing seat is arranged on a side of the first surface which is adjacent to the buckling edge. The plurality of positioning seats are separately arranged on an other side of the first surface opposite to the side provided with the fixing seat. The control rod includes a locking end locked on the fixing seat.

Abstract: A microorganism curing anti-seepage device based on capsule transmission and control includes a stock bin which includes a mixing bin and an oil storage bin separated from the mixing bin. A feed pipe and an oil injection pipe are provided on the stock bin. A central shaft is rotatably provided within the mixing bin. A stirring component is provided on the central shaft. A delivery pipe is provided at a bottom portion of the mixing bin, an oil conduit is provided at a bottom portion of the oil storage bin, a jet pipe is provided at a junction of the oil conduit and the delivery pipe. Since microbial capsules are decomposed layer by layer, after the microbial capsules reach fissures, the microbial bacteria, the nutrient solution and the curing liquid are released step by step, and then calcium carbonate is induced by microorganisms to achieve solidification and anti-seepage of fissures.

Abstract: A method includes: receiving a composite substrate including a first region and a second region, the composite substrate comprising a semiconductor substrate and an insulator layer over the semiconductor substrate; bonding a silicon layer to the composite substrate; depositing a capping layer over the silicon layer; forming a trench through the capping layer, the silicon layer and the insulator layer, the trench exposing a surface of the semiconductor substrate in the first region; growing an initial epitaxial layer in the trench; removing the capping layer to form an epitaxial layer from the silicon layer and the initial epitaxial layer; forming a transistor layer over the epitaxial layer, the transistor layer including a first transistor and a second transistor in the first region and the second region, respectively; and forming an interconnect layer over the transistor layer and electrically coupling the first transistor to the second transistor.

Abstract: A drilling platform for amphibious operations includes: a base, wherein drive tracks are arranged on both sides of the base, a propeller is disposed at a rear end of the base, and a driving assembly is disposed inside the base; two support cylinders are respectively disposed at two ends of the base; each of the support cylinders contains a sub-cylinder; a pushing cylinder is arranged on a bottom surface of the partition plate; a buoyancy adjustment assembly is provided at a bottom of the base, so as to provide buoyancy support for the base when the base is transferred from land to water. The present invention is suitable for drilling construction of pile foundations of water and land buildings, bridge piers, and transmission line electric tower pile foundations, as well as drilling of oil wells, wherein the drilling platform construction process at different drilling points is omitted.

Abstract: A semiconductor device and method of forming the same are provided. The semiconductor device includes a substrate, a growth promoting region, a first gate stack, and a second gate stack. The substrate includes a first region and a second region. The growth promoting region is located in a surface of the substrate in the first region. The growth promoting region includes a first implantation species, and a surface of the substrate in the second region is free of the first implantation species. The first gate stack includes a first gate dielectric layer on the substrate in the first region. The second gate stack includes a second gate dielectric layer on the substrate in the second region.

Abstract: An irregular rock sample high-pressure permeation device with an adjustable flow direction and a test method thereof are provided, wherein two blocking mechanisms I and two blocking mechanisms II are arranged inside a cylinder body; partitioning plates are respectively arranged on both sides of each of the blocking mechanisms I; water blocking plates are respectively arranged at both sides of each of the blocking mechanisms I; one end of each of the water blocking plates is connected to the sidewall of each of the partitioning plates, and the other end of each of the water blocking plates is connected to an internal portion of the cylinder body; a water injection pipe is disposed between the water blocking plates on a same side. The present invention combines flexible film amorphous close fit properties and easy charging and discharging of free gas.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a gate stack, a first doped region, a second doped region, and a buried doped region. The first doped region has a first conductivity type and is located in the substrate at a first side of the gate stack. The second doped region has the first conductivity type and is located in the substrate at a second side of the gate stack. The buried doped region has the first conductivity type and is buried in the substrate, extended from the first doped region to the second doped region, and separated from the gate stack by a distance.

Abstract: A microorganism curing anti-seepage device based on capsule transmission and control includes a stock bin which includes a mixing bin and an oil storage bin separated from the mixing bin. A feed pipe and an oil injection pipe are provided on the stock bin. A central shaft is rotatably provided within the mixing bin. A stirring component is provided on the central shaft. A delivery pipe is provided at a bottom portion of the mixing bin, an oil conduit is provided at a bottom portion of the oil storage bin, a jet pipe is provided at a junction of the oil conduit and the delivery pipe. Since microbial capsules are decomposed layer by layer, after the microbial capsules reach fissures, the microbial bacteria, the nutrient solution and the curing liquid are released step by step, and then calcium carbonate is induced by microorganisms to achieve solidification and anti-seepage of fissures.

Abstract: A semiconductor device and method of forming the same are provided. The semiconductor device includes a substrate, a growth promoting region, a first gate stack, and a second gate stack. The substrate includes a first region and a second region. The growth promoting region is located in a surface of the substrate in the first region. The growth promoting region includes a first implantation species, and a surface of the substrate in the second region is free of the first implantation species. The first gate stack includes a first gate dielectric layer on the substrate in the first region. The second gate stack includes a second gate dielectric layer on the substrate in the second region.

Abstract: Provided is a semiconductor device includes a gate stack, a first doped region, a second doped region, a first lightly doped region and a second lightly doped region. The gate stack is disposed on a substrate. The first doped region is located in the substrate at a first side of the gate stack. The second doped region is located in the substrate at a second side of the gate stack. The first lightly doped region is located in the substrate between the gate stack and the first doped region. The second lightly doped region is located in the substrate between the gate stack and the second doped region. A property of the first lightly doped region is different from a property of the second lightly doped region.

Abstract: An irregular rock sample high-pressure permeation device with an adjustable flow direction and a test method thereof are provided, wherein two blocking mechanisms I and two blocking mechanisms II are arranged inside a cylinder body; partitioning plates are respectively arranged on both sides of each of the blocking mechanisms I; water blocking plates are respectively arranged at both sides of each of the blocking mechanisms I; one end of each of the water blocking plates is connected to the sidewall of each of the partitioning plates, and the other end of each of the water blocking plates is connected to an internal portion of the cylinder body; a water injection pipe is disposed between the water blocking plates on a same side. The present invention combines flexible film amorphous close fit properties and easy charging and discharging of free gas.

Abstract: A drilling platform for amphibious operations includes: a base, wherein drive tracks are arranged on both sides of the base, a propeller is disposed at a rear end of the base, and a driving assembly is disposed inside the base; two support cylinders are respectively disposed at two ends of the base; each of the support cylinders contains a sub-cylinder; a pushing cylinder is arranged on a bottom surface of the partition plate; a buoyancy adjustment assembly is provided at a bottom of the base, so as to provide buoyancy support for the base when the base is transferred from land to water. The present invention is suitable for drilling construction of pile foundations of water and land buildings, bridge piers, and transmission line electric tower pile foundations, as well as drilling of oil wells, wherein the drilling platform construction process at different drilling points is omitted.

Abstract: A photocatalyst includes a composite fiber having at least two crystalline semi-conductors that provide a heterojunction structure in the composite fiber.

Abstract: A photocatalyst includes a composite fiber having at least two crystalline semi-conductors that provide a heterojunction structure in the composite fiber.

Abstract: The present disclosure provides a memory device including a first electrode; a second electrode; a transistor, and a nanotube. The transistor includes a first node, a second node and a control node, wherein the second node is electrically coupled to the second electrode, and the control node is configured to generate a channel between the first node and the second node. A first end of the nanotube is electrically coupled to a contact, and a second end of the nanotube is positioned between the first electrode and the second electrode. The second end electrically connects the first electrode to form a non-volatile open state of the memory device, or the second end electrically connects the second electrode to form a non-volatile closed state of the memory device. The non-volatile open state represents a first logic state and the non-volatile closed state represents a second logic state.

Abstract: A photocatalyst includes a composite fiber having at least two crystalline semi-conductors that provide a heterojunction structure in the composite fiber.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a gate stack, a first doped region, a second doped region, and a buried doped region. The first doped region has a first conductivity type and is located in the substrate at a first side of the gate stack. The second doped region has the first conductivity type and is located in the substrate at a second side of the gate stack. The buried doped region has the first conductivity type and is buried in the substrate, extended from the first doped region to the second doped region, and separated from the gate stack by a distance.

Abstract: Provided is a semiconductor device includes a gate stack, a first doped region, a second doped region, a first lightly doped region and a second lightly doped region. The gate stack is disposed on a substrate. The first doped region is located in the substrate at a first side of the gate stack. The second doped region is located in the substrate at a second side of the gate stack. The first lightly doped region is located in the substrate between the gate stack and the first doped region. The second lightly doped region is located in the substrate between the gate stack and the second doped region. A property of the first lightly doped region is different from a property of the second lightly doped region.