Patents by Inventor Chun Ren

Chun Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170297901
    Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.
    Type: Application
    Filed: April 26, 2017
    Publication date: October 19, 2017
    Inventors: FU-CHUN HUANG, LI-CHEN YEN, TZU-HENG WU, YI-HENG TSAI, CHUN-REN CHENG
  • Patent number: 9791406
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: October 17, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
  • Publication number: 20170227533
    Abstract: Dual-gate ion-sensitive field effect transistors (ISFETs) for disease diagnostics are disclosed herein. An exemplary dual-gate ISFET includes a gate structure and a fluidic gate structure disposed over opposite surfaces of a device substrate. The gate structure is disposed over a channel region defined between a source region and a drain region in the device substrate. The fluidic gate structure includes a sensing well that is disposed over the channel region. The sensing well includes a sensing layer and an electrolyte solution. The electrolyte solution includes a constituent that can react with a product of an enzymatic reaction that occurs when an enzyme-modified detection mechanism detects an analyte. The sensing layer can react with a first ion generated from the enzymatic reaction and a second ion generated from a reaction between the product of the enzymatic reaction and the constituent, such that the dual-gate ISFET generates an enhanced electrical signal.
    Type: Application
    Filed: April 28, 2017
    Publication date: August 10, 2017
    Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Yi-Hsien Chang
  • Publication number: 20170217769
    Abstract: A semiconductor manufacturing method includes providing a wafer. A layer is formed over a surface of the wafer where the layer is able to form a eutectic layer with a conductive element. The layer is partially removed so as to form a plurality of mesas. The wafer is bonded to a substrate through the plurality of mesas. The substrate is thinned down to a thickness so as to be less than a predetermined value.
    Type: Application
    Filed: February 3, 2016
    Publication date: August 3, 2017
    Inventors: LI-CHEN YEN, YI-HSIEN CHANG, CHUN-REN CHENG
  • Patent number: 9718677
    Abstract: In the present disclosure a semiconductor device comprises a plate including a plurality of apertures. The semiconductor device also comprises a membrane disposed opposite to the plate and including a plurality of corrugations, a dielectric surrounding and covering an edge of the membrane, and a substrate. The semiconductor device further includes a metallic conductor comprising a first portion extending through the dielectric, and a second portion over the substrate, where the second portion is bonded with the first portion.
    Type: Grant
    Filed: January 19, 2016
    Date of Patent: August 1, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng
  • Publication number: 20170203961
    Abstract: In the present disclosure a semiconductor device comprises a plate including a plurality of apertures. The semiconductor device also comprises a membrane disposed opposite to the plate and including a plurality of corrugations, a dielectric surrounding and covering an edge of the membrane, and a substrate. The semiconductor device further includes a metallic conductor comprising a first portion extending through the dielectric, and a second portion over the substrate, where the second portion is bonded with the first portion.
    Type: Application
    Filed: January 19, 2016
    Publication date: July 20, 2017
    Inventors: YI-HSIEN CHANG, CHUN-REN CHENG
  • Patent number: 9711164
    Abstract: An embodiment of the invention provides a noise cancellation method for an electronic device. The method comprises: receiving an audio signal; applying a Fast Fourier Transform operation on the audio signal to generate a sound spectrum; acquiring a first spectrum corresponding to a noise and a second spectrum corresponding to a human voice signal from the sound spectrum; estimating a center frequency according to the first spectrum and the second spectrum; and applying a high pass filtering operation to the sound spectrum according to the center frequency.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: July 18, 2017
    Assignee: HTC CORPORATION
    Inventors: Lei Chen, Yu-Chieh Lai, Chun-Ren Hu, Hann-Shi Tong
  • Patent number: 9709525
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: July 18, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
  • Patent number: 9677884
    Abstract: A method of forming a structure for a gyroscope sensor includes forming a first dielectric over a substrate and a material layer over the first dielectric layer. A first portion of the material layer is removed to form a recess and a second portion of the material layer is removed to define a first channel between a gyro disk and a frame. A second channel is formed in the substrate corresponding to the first channel, and a portion of the first dielectric is removed to form a second dielectric between the gyro disk and the substrate.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: June 13, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Hau Wu, Chun-Ren Cheng, Jiou-Kang Lee, Jung-Huei Peng, Shang-Ying Tsai
  • Patent number: 9666803
    Abstract: The present invention relates to an photoelectrode and the preparation method thereof, wherein said photoelectrode comprises a substrate and a titania layer composed of a mesoporous titania bead having a diameter of 200-1000 nm, specific surface area of 50-100 m2/g, porosity of 40-60%, pore radius of 5-20 nm, pore volume of 0.20-0.30 cm3/g, and the titania comprised in the bead is anatase titania.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: May 30, 2017
    Assignee: NATIONAL CHENG KUNG UNIVERSITY
    Inventors: Jyh-Ming Ting, Chun-Ren Ke
  • Patent number: 9656855
    Abstract: A semiconductor structure includes a substrate, a dielectric layer disposed over the substrate, a sensing structure disposed over the dielectric layer, a bonding structure disposed over the dielectric layer, a conductive layer covering the sensing structure, and a barrier layer disposed over the dielectric layer, the conductive layer and the bonding structure, wherein the conductive layer and the bonding structure are at least partially exposed from the barrier layer.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: May 23, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fu-Chun Huang, Li-Chen Yen, Tzu-Heng Wu, Yi-Heng Tsai, Chun-Ren Cheng
  • Patent number: 9625493
    Abstract: The present disclosure provides a biosensor device wafer testing and processing methods, system and apparatus. The biosensor device wafer includes device areas separated by scribe lines. A number of test areas that allow fluidic electrical testing are embedded in scribe lines or in device areas. An integrated electro-microfluidic probe card includes a fluidic mount that may be transparent, a microfluidic channels in the fluidic mount in a testing portion, at least one microfluidic probe and a number of electronic probe tips at the bottom of the fluidic mount, fluidic and electronic input and output ports on the sides of the fluidic mount, and at least one handle lug on the fluidic mount. The method includes aligning a wafer, mounting the integrated electro-microfluidic probe card, flowing one or more test fluids in series, and measuring and analyzing electrical properties to determine process qualities and an acceptance level of the wafer.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: April 18, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Shao Liu, Chun-Ren Cheng, Chun-Wen Cheng
  • Patent number: 9616617
    Abstract: The present disclosure provides a biochip and methods of fabricating. The biochip includes a fluidic part and a sensing part bonded together using a polymer. The fluidic part has microfluidic channel pattern on one side and fluidic inlet and fluidic outlet on the other side that are fluidly connected to the microfluidic channel pattern. The fluidic inlet and fluidic outlet are formed by laser drilling after protecting the microfluidic channel pattern with a sacrificial protective layer. The polymer bonding is performed at low temperature without damaging patterned surface chemistry on a sensing surface of the sensing part.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: April 11, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Cheng Shen, Yi-Shao Liu, Yi-Hsien Chang, Chun-Ren Cheng
  • Patent number: 9601128
    Abstract: A voice processing method for use in a communication apparatus, in an embodiment, includes the following steps. A near-end audio signal is received by at least one microphone of the communication apparatus. Voice and noise energy data are generated by performing voice activity detection on the near-end audio signal. A noise amount is obtained by performing noise energy calculation with the noise energy data. Whether the noise amount exceeds a first noise amount threshold is determined. If the noise amount exceeds the first noise amount threshold, a sidetone mode of the communication apparatus is enabled to produce a sidetone signal according to the voice energy data and play the sidetone signal through a speaker thereof. A noise suppression mode is enabled to produce a far-end audio signal according to the voice energy data and transmitting the far-end audio signal by a communication module of the communication apparatus.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: March 21, 2017
    Assignee: HTC CORPORATION
    Inventors: Chun-Ren Hu, Hann-Shi Tong, Ting-Wei Sun
  • Publication number: 20170067890
    Abstract: Dual-gate ion-sensitive field effect transistor (ISFET) and methods implementing the dual-gate ISFETs for disease diagnostics are disclosed herein. An exemplary method includes providing a biological sample to a dual-gate ISFET. The dual-gate ISFET includes a fluidic gate structure and a gate structure, where the fluidic gate structure and the gate structure are disposed over opposite surfaces of a device substrate. The method further includes generating enzymatic reactions from enzyme-modified detection mechanisms. The enzyme-modified detection mechanisms release ions into an electrolyte solution of the fluidic gate structure. The method further includes biasing the fluidic gate structure and the gate structure to generate an electrical signal as a sensing layer of the fluidic gate structure reacts with the ions. The electrical signal indicates an ion concentration in the electrolyte solution that correlates with a presence or a quantity of target analytes in the biological sample.
    Type: Application
    Filed: November 18, 2016
    Publication date: March 9, 2017
    Inventors: Ching-Hui Lin, Chun-Ren Cheng, Yi-Hsien Chang, Shih-Fen Huang
  • Publication number: 20170059515
    Abstract: A method for testing a partially fabricated bio-sensor device wafer includes aligning the partially fabricated bio-sensor device wafer on a wafer stage of a wafer-level bio-sensor processing tool. The method further includes mounting an integrated electro-microfluidic probe card to a device area on the partially fabricated bio-sensor device wafer, wherein the electro-microfluidic probe card has a first major surface. The method further includes electrically connecting one or more electronic probe tips disposed on the first major surface of the integrated electro-microfluidic probe card to conductive areas of the device area. The method further includes flowing a test fluid from a fluid supply to the integrated electro-microfluidic probe card. The method further includes electrically measuring via the one or more electronic probe tips a first electrical property of one or more bio-FETs of the device area based on the test fluid flow.
    Type: Application
    Filed: November 14, 2016
    Publication date: March 2, 2017
    Inventors: Yi-Shao LIU, Fei-Lung LAI, Chun-Ren CHENG, Chun-Wen CHENG
  • Publication number: 20170029268
    Abstract: A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures; a membrane disposed opposite to the plate and including a plurality of corrugations, and a conductive plug extending through the plate and the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.
    Type: Application
    Filed: July 31, 2015
    Publication date: February 2, 2017
    Inventors: YI-HSIEN CHANG, CHUN-REN CHENG, WEI-CHENG SHEN, WEN-CHIEN CHEN
  • Publication number: 20170023521
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Application
    Filed: October 3, 2016
    Publication date: January 26, 2017
    Inventors: Alexander KALNITSKY, Yi-Shao LIU, Kai-Chih LIANG, Chia-Hua CHU, Chun-Ren CHENG, Chun-Wen CHENG
  • Patent number: 9523642
    Abstract: The present disclosure provides a biological field effect transistor (BioFET) device testing and processing methods, system and apparatus. A wafer-level bio-sensor processing tool includes a wafer stage, an integrated electro-microfluidic probe card, and a fluid supply and return. The integrated electro-microfluidic probe card includes a fluidic mount that may be transparent, a microfluidic channels in the fluidic mount, at least one microfluidic probe and a number of electronic probe tips at the bottom of the fluidic mount, fluidic and electronic input and output ports on the sides of the fluidic mount, and at least one handle lug on the fluidic mount. The method includes aligning a wafer, mounting the integrated electro-microfluidic probe card, flowing a test fluid, and measuring electrical properties. The tool may also be used for stamping or printing a fluid in the device area on the wafer.
    Type: Grant
    Filed: November 9, 2012
    Date of Patent: December 20, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Shao Liu, Fei-Lung Lai, Chun-Ren Cheng, Chun-Wen Cheng
  • Publication number: 20160362292
    Abstract: A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate.
    Type: Application
    Filed: June 15, 2015
    Publication date: December 15, 2016
    Inventors: YI-HSIEN CHANG, CHUN-WEN CHENG, CHUN-REN CHENG, SHIH-WEI LIN, WEI-CHENG SHEN