Patents by Inventor Chun Ren

Chun Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DISPLAY APPARATUS AND ELECTRONIC DEVICE
    Publication number: 20200315044
    Abstract: A display device includes a display screen, a cover plate disposed at an upper surface of the display screen, and a connection structure having a bracket. The bracket is disposed on a surface of the cover plate away from the display screen. At least a part of a contact area between the bracket and the cover plate overlaps with the display screen along a first direction. The first direction is a direction perpendicular to a display surface of the display screen.
    Type: Application
    Filed: March 28, 2020
    Publication date: October 1, 2020
    Inventor: Chun REN
  • MEMS DEVICE
    Publication number: 20200290863
    Abstract: A micro-electro-mechanical system (MEMS) device includes a substrate, a proof mass, and a piezoelectric bump. The substrate has a surface. The proof mass is suspended over the surface of the substrate, wherein the proof mass is movable with respect to the substrate. The piezoelectric bump is disposed on the surface of the substrate and extends a distance from the surface of the substrate toward the proof mass.
    Type: Application
    Filed: March 14, 2019
    Publication date: September 17, 2020
    Inventors: FAN HU, WEN-CHUAN TAI, HSIANG-FU CHEN, CHUN-REN CHENG
  • Method for manufacturing semiconductor and structure and operation of the same
    Patent number: 10756086
    Abstract: A method of manufacturing a semiconductor structure is provided, wherein the method includes the following operations. A substrate having a transistor is received, wherein the transistor includes a channel region and a gate on a first side of the channel region. The second side of the channel region of the transistor is exposed, wherein the second side is opposite to the first side. A metal oxide is formed on the second side of the channel region of the transistor, wherein the metal oxide contacts the channel region and is exposed to the environment. A semiconductor structure and an operation of a semiconductor structure thereof are also provided.
    Type: Grant
    Filed: February 21, 2019
    Date of Patent: August 25, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Fu-Chun Huang, Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Alexander Kalnitsky
  • Semiconductor structure and method for fabricating the same
    Patent number: 10737936
    Abstract: A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer; wherein the plurality of scribe lines protrudes from a third surface of the second wafer, and the third surface is between the first surface and the second surface.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Cheng Shen, Yi-Hsien Chang, Yi-Heng Tsai, Chun-Ren Cheng
  • Semiconductor structure and manufacturing method thereof
    Patent number: 10737931
    Abstract: A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures; a membrane disposed opposite to the plate and including a plurality of corrugations, and a conductive plug extending through the plate and the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate includes a semiconductive member and a tensile member, and the semiconductive member is disposed within the tensile member.
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Wei-Cheng Shen, Wen-Chien Chen
  • NOVEL ELECTRODEPOSITION SYSTEM
    Publication number: 20200231823
    Abstract: An electrocoat system for electrodeposition is described. The system includes an inorganic bismuth-containing compound or a mixture of inorganic and organic bismuth-containing compounds. The system demonstrates a high degree of crosslinking and produces a cured coating with optimal crosslinking and corrosion resistance.
    Type: Application
    Filed: April 6, 2020
    Publication date: July 23, 2020
    Inventors: Victoria J. Gelling, Tapan DebRoy, Chun Ren
  • MEMS devices and methods of fabrication thereof
    Patent number: 10688786
    Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: June 23, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
  • Electrodeposition system
    Patent number: 10655023
    Abstract: An electrocoat system for electrodeposition is described. The system includes an inorganic bismuth-containing compound or a mixture of inorganic and organic bismuth-containing compounds. The system demonstrates a high degree of crosslinking and produces a cured coating with optimal crosslinking and corrosion resistance.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: May 19, 2020
    Assignee: The Sherwin Williams Company
    Inventors: Victoria J Gelling, Tapan DebRoy, Chun Ren
  • CMOS COMPATIBLE BIOFET
    Publication number: 20200150080
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Application
    Filed: December 26, 2019
    Publication date: May 14, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Alexander KALNITSKY, Yi-Shao LIU, Kai-Chih LIANG, Chia-Hua CHU, Chun-Ren CHENG, Chun-Wen CHENG
  • PROCESSING APPARATUS AND PROCESSING SYSTEM
    Publication number: 20200103989
    Abstract: The present disclosure provides a processing apparatus and a processing system, that the processing apparatus includes: a first main body having a first plane and a second plane adjacent to the first plane; a display device disposed on the first plane; and a first interface that is matched with a second interface of an acquisition apparatus, and is configured to obtain multimedia data collected by the acquisition apparatus from the second interface after the acquisition apparatus is detachably fixed to the second plane. The processing apparatus supports the accessory-type acquisition apparatus, which satisfies diversified use requirements.
    Type: Application
    Filed: September 28, 2019
    Publication date: April 2, 2020
    Inventors: Jie LIU, Chun Ren, Zhou Yu
  • DIFFERENTIAL SENSING WITH BIOFET SENSORS
    Publication number: 20200103369
    Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.
    Type: Application
    Filed: May 1, 2019
    Publication date: April 2, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ching-Hui LIN, Chun-Ren CHENG, Shih-Fen HUANG, Fu-Chun HUANG
  • PIEZOELECTRIC BIOSENSOR AND RELATED METHOD OF FORMATION
    Publication number: 20200105996
    Abstract: In some embodiments, a piezoelectric biosensor is provided. The piezoelectric biosensor includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A sensing reservoir is disposed over the piezoelectric structure and exposed to an ambient environment, where the sensing reservoir is configured to collect a fluid comprising a number of bio-entities.
    Type: Application
    Filed: May 24, 2019
    Publication date: April 2, 2020
    Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Fu-Chun Huang
  • INTEGRATED HEATER (AND RELATED METHOD) TO RECOVER DEGRADED PIEZOELECTRIC DEVICE PERFORMANCE
    Publication number: 20200098969
    Abstract: In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.
    Type: Application
    Filed: May 16, 2019
    Publication date: March 26, 2020
    Inventors: Alexander Kalnitsky, Chun-Ren Cheng, Chi-Yuan Shih, Kai-Fung Chang, Shih-Fen Huang, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yan-Jie Liao
  • NOVEL INTEGRATION SCHEME FOR BREAKDOWN VOLTAGE ENHANCEMENT OF A PIEZOELECTRIC METAL-INSULATOR-METAL DEVICE
    Publication number: 20200098517
    Abstract: Various embodiments of the present disclosure are directed towards a piezoelectric metal-insulator-metal (MIM) device including a piezoelectric structure between a top electrode and a bottom electrode. The piezoelectric layer includes a top region overlying a bottom region. Outer sidewalls of the bottom region extend past outer sidewalls of the top region. The outer sidewalls of the top region are aligned with outer sidewalls of the top electrode. The piezoelectric layer is configured to help limit delamination of the top electrode from the piezoelectric layer.
    Type: Application
    Filed: May 21, 2019
    Publication date: March 26, 2020
    Inventors: Anderson Lin, Chun-Ren Cheng, Chi-Yuan Shih, Shih-Fen Huang, Yi-Chuan Teng, Yi Heng Tsai, You-Ru Lin, Yen-Wen Chen, Fu-Chun Huang, Fan Hu, Ching-Hui Lin, Yan-Jie Liao
  • Backside CMOS Compatible BioFET with No Plasma Induced Damage
    Publication number: 20200072789
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
    Type: Application
    Filed: November 8, 2019
    Publication date: March 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Shao LIU, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
  • METHOD OF USING INTEGRATED ELECTRO-MICROFLUIDIC PROBE CARD
    Publication number: 20200025713
    Abstract: A method includes mounting an integrated electro-microfluidic probe card to a device area on a bio-sensor device wafer, wherein the electro-microfluidic probe card has a first major surface and a second major surface opposite the first major surface. The method further includes electrically connecting at least one electronic probe tip extending from the first major surface to a corresponding conductive area of the device area. The method further includes stamping a test fluid onto the device area. The method further includes measuring via the at least one electronic probe tip a first electrical property of one or more bio-FETs of the device area based on the test fluid.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Inventors: Yi-Shao LIU, Fei-Lung LAI, Chun-Ren CHENG, Chun-Wen CHENG
  • MEMS Devices and Methods of Fabrication Thereof
    Publication number: 20200023642
    Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen.
    Type: Application
    Filed: September 30, 2019
    Publication date: January 23, 2020
    Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
  • Direct Sensing BioFETs and Methods of Manufacture
    Publication number: 20200025712
    Abstract: The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of micro wells having a sensing gate bottom and a number of stacked well portions. A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The micro wells are formed by multiple etching operations through different materials, including a sacrificial plug, to expose the sensing gate without plasma induced damage.
    Type: Application
    Filed: September 20, 2019
    Publication date: January 23, 2020
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Shih-Wei Lin, Yi-Shao Liu
  • Sports camera
    Patent number: D877228
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: March 3, 2020
    Inventors: Bai Lin Han, Yong Chun Ren
  • Hunting camera
    Patent number: D894252
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: August 25, 2020
    Inventors: Bai Lin Han, Yong Chun Ren