Patents by Inventor Chun Ren

Chun Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180237642
    Abstract: A microbe-resistant coating composition or paint including an antimicrobial agent is described. The antimicrobial agent is an inorganic bismuth-containing compound, and may be used in conjunction with other bismuth-containing compounds or other biocidal agents or methods. A method of treating an electrodeposition system for bacterial and/or fungal contamination is also described by adding an antimicrobial agent to at least a portion of the electrodeposition system.
    Type: Application
    Filed: May 23, 2016
    Publication date: August 23, 2018
    Applicant: VALSPAR SOURCING, INC.
    Inventors: VICTORIA J GELLING, TAPAN DEBROY, CHUN REN, MALLORY MESSIN
  • Publication number: 20180195999
    Abstract: A method of sensing a biological sample includes introducing a fluid containing the biological sample through a first opening in a substrate. The method further includes passing the fluid from the first opening to a first cavity through at least one microfluidic channel. The method further includes repelling the biological sample from a first surface of the first cavity using a first surface modification layer. The method further includes attracting the biological sample to a sensing device using a plurality of modified surface patterns, wherein a first modified surface pattern of the plurality of modified surface patterns has different surface properties from a second modified surface pattern of the plurality of modified surface patterns. The method further includes outputting the fluid through a second opening in the substrate.
    Type: Application
    Filed: March 6, 2018
    Publication date: July 12, 2018
    Inventors: Yi-Shao LIU, Chun-Wen CHENG, Chun-Ren CHENG
  • Publication number: 20180195998
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Application
    Filed: March 5, 2018
    Publication date: July 12, 2018
    Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
  • Publication number: 20180172627
    Abstract: A semiconductor device including a biosensor with an on-chip reference electrode embedded within the semiconductor device, and associated manufacturing methods are provided. In some embodiments, a pair of source/drain regions is disposed within a device substrate and separated by a channel region. An isolation layer is disposed over the device substrate. A sensing well is disposed from an upper surface of the isolation layer overlying the channel region. A bio-sensing film is disposed along the upper surface of the isolation layer and extended along sidewall and lower surfaces of the sensing well. A reference electrode is disposed vertically between the bio-sensing film and the isolation layer.
    Type: Application
    Filed: December 21, 2016
    Publication date: June 21, 2018
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng, Shih-Fen Huang, Ching-Hui Lin
  • Publication number: 20180141800
    Abstract: A method includes the following operations: forming a piezoelectric substrate including a piezoelectric structure and a conductive contact structure, in which the piezoelectric structure has a conductive layer and a piezoelectric layer in contact with the conductive layer, and the conductive contact structure is electrically connected to the piezoelectric structure and protrudes beyond a principal surface of the piezoelectric substrate; forming a semiconductor substrate having a conductive receiving feature and a semiconductor device electrically connected thereto; aligning the conductive contact structure of the piezoelectric substrate with the conductive receiving feature of the semiconductor substrate; and bonding the piezoelectric substrate with the semiconductor substrate such that the conductive contact structure is in contact with the conductive receiving feature.
    Type: Application
    Filed: January 3, 2018
    Publication date: May 24, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Ren CHENG, Richard YEN, Yi-Hsien CHANG, Wei-Cheng SHEN
  • Patent number: 9976983
    Abstract: A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes an electro-wetting-on-dielectric (EWOD) device. The EWOD device includes a top portion over a bottom portion and a channel gap between the top portion and the bottom portion. The bottom portion includes a driving dielectric layer over a first electrode, a second electrode and a first separating portion of an ILD layer between the first electrode and a second electrode. The driving dielectric layer has a first thickness less than about 1,000 ?. An EWOD device with a driving dielectric layer having a first thickness less 1000 ? requires a lower applied voltage to alter a shape of a droplet within the device and has a longer operating life than an EWOD device that requires a higher applied voltage to alter the shape of the droplet.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: May 22, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yi-Hsien Chang, Chun-Ren Cheng
  • Patent number: 9975754
    Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: May 22, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Fu-Chun Huang, Li-Chen Yen, Tzu-Heng Wu, Yi-Heng Tsai, Chun-Ren Cheng
  • Patent number: 9968927
    Abstract: The present disclosure relates to an integrated chip having an integrated optical bio-sensor, and an associated method of fabrication. In some embodiments, the integrated optical bio-sensor has a sensing device arranged within a semiconductor substrate. An optical waveguide structure is located over a first side of the semiconductor substrate at a position over the sensing device. A dielectric structure is disposed onto the optical waveguide structure at a position that separates the optical waveguide structure from a sample retention area configured to receive a sample solution.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: May 15, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Shao Liu, Emerson Cheng, Yi-Hsien Chang, Chun-Ren Cheng, Ching-Ray Chen, Alex Kalnitsky, Allen Timothy Chang
  • Patent number: 9958443
    Abstract: Dual-gate ion-sensitive field effect transistors (ISFETs) for disease diagnostics are disclosed herein. An exemplary dual-gate ISFET includes a gate structure and a fluidic gate structure disposed over opposite surfaces of a device substrate. The gate structure is disposed over a channel region defined between a source region and a drain region in the device substrate. The fluidic gate structure includes a sensing well that is disposed over the channel region. The sensing well includes a sensing layer and an electrolyte solution. The electrolyte solution includes a constituent that can react with a product of an enzymatic reaction that occurs when an enzyme-modified detection mechanism detects an analyte. The sensing layer can react with a first ion generated from the enzymatic reaction and a second ion generated from a reaction between the product of the enzymatic reaction and the constituent, such that the dual-gate ISFET generates an enhanced electrical signal.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: May 1, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Yi-Hsien Chang
  • Patent number: 9950522
    Abstract: MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.
    Type: Grant
    Filed: September 21, 2015
    Date of Patent: April 24, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jung-Huei Peng, Chun-Ren Cheng, Jiou-Kang Lee, Shang-Ying Tsai, Ting-Hau Wu
  • Patent number: 9915630
    Abstract: A biochip includes a substrate, where the substrate includes at least one hole extending from a first surface of the substrate to a second surface of the substrate opposite the first surface, and where the substrate comprises a microfluidic channel pattern. The biochip further includes a surface modification layer over the substrate. Additionally, the biochip includes a sensing wafer bonded to the substrate, where the sensing wafer has one or more modified surface patterns having different surface properties from each other.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: March 13, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Shao Liu, Chun-Wen Cheng, Chun-Ren Cheng
  • Patent number: 9910009
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Grant
    Filed: July 27, 2017
    Date of Patent: March 6, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
  • Patent number: 9862592
    Abstract: A MEMS transducer includes a first substrate and a second substrate facing the first substrate. The first substrate includes a piezoelectric diaphragm and a conductive contact structure. The conductive contact structure is electrically connected to the piezoelectric diaphragm, and protrudes beyond a principal surface of the first substrate. The second substrate includes a conductive receiving feature and an active device. The conductive receiving feature is aligned with and further bonded to the conductive contact structure. The active device is electrically connected to the piezoelectric diaphragm through the conductive receiving feature and the conductive contact structure.
    Type: Grant
    Filed: March 13, 2015
    Date of Patent: January 9, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Ren Cheng, Richard Yen, Yi-Hsien Chang, Wei-Cheng Shen
  • Publication number: 20170341933
    Abstract: A method of fabricating a semiconductor structure includes: providing a first wafer, providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer; wherein the plurality of scribe lines protrudes from a third surface of the second wafer, and the third surface is between the first surface and the second surface.
    Type: Application
    Filed: May 31, 2016
    Publication date: November 30, 2017
    Inventors: WEI-CHENG SHEN, YI-HSIEN CHANG, YI-HENG TSAI, CHUN-REN CHENG
  • Publication number: 20170343498
    Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.
    Type: Application
    Filed: July 22, 2016
    Publication date: November 30, 2017
    Inventors: Alexander Kalnitsky, Yi-Hsien Chang, Chun-Ren Cheng, Jui-Cheng Huang, Shih-Fen Huang, Tung-Tsun Chen, Ching-Hui Lin
  • Publication number: 20170335120
    Abstract: An electrocoat system for electrodeposition is described. The system includes an inorganic bismuth-containing compound or a mixture of inorganic and organic bismuth-containing compounds. The system demonstrates a high degree of crosslinking and produces a cured coating with optimal crosslinking and corrosion resistance.
    Type: Application
    Filed: August 9, 2017
    Publication date: November 23, 2017
    Applicant: Valspar Sourcing, Inc.
    Inventors: Victoria J. Gelling, Tapan DebRoy, Chun Ren
  • Patent number: 9815685
    Abstract: A semiconductor structure includes a first device and a second device. The first device includes a plate including a plurality of apertures, a membrane disposed opposite to the plate and including a plurality of corrugations facing the plurality of apertures, and a conductive plug extending from the plate through the membrane. The second device includes a substrate and a bond pad disposed over the substrate, wherein the conductive plug is bonded with the bond pad to integrate the first device with the second device, and the plate is an epitaxial (EPI) silicon layer or a silicon-on-insulator (SOI) substrate.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: November 14, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yi-Hsien Chang, Chun-Wen Cheng, Chun-Ren Cheng, Shih-Wei Lin, Wei-Cheng Shen
  • Publication number: 20170322177
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
    Type: Application
    Filed: July 27, 2017
    Publication date: November 9, 2017
    Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
  • Patent number: 9810689
    Abstract: Dual-gate ion-sensitive field effect transistors (ISFETs) for disease diagnostics are disclosed herein. An exemplary dual-gate ISFET includes a gate structure and a fluidic gate structure disposed over opposite surfaces of a device substrate. The gate structure is disposed over a channel region defined between a source region and a drain region in the device substrate. The fluidic gate structure includes a sensing well that is disposed over the channel region. The sensing well includes a sensing layer and an electrolyte solution. The electrolyte solution includes a constituent that can react with a product of an enzymatic reaction that occurs when an enzyme-modified detection mechanism detects an analyte. The sensing layer can react with a first ion generated from the enzymatic reaction and a second ion generated from a reaction between the product of the enzymatic reaction and the constituent, such that the dual-gate ISFET generates an enhanced electrical signal.
    Type: Grant
    Filed: April 28, 2017
    Date of Patent: November 7, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ching-Hui Lin, Chun-Ren Cheng, Shih-Fen Huang, Yi-Hsien Chang
  • Publication number: 20170315085
    Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
    Type: Application
    Filed: July 14, 2017
    Publication date: November 2, 2017
    Inventors: Yi-Shao LIU, Chun-Ren CHENG, Ching-Ray CHEN, Yi-Hsien CHANG, Fei-Lung LAI, Chun-Wen CHENG