Abstract: Example devices, methods, and computer-readable media are described. An example method includes determining to decode a current block of the video data using a merge mode. The example method includes determining, for the current block, to apply local illumination compensation (LIC). The example method includes determining, for the current block, to apply decoder side motion vector refinement (DMVR). The example method includes decoding the current block based on applying LIC and applying DMVR.

Abstract: Example devices, methods, and computer-readable media for decoding video data are described. An example method includes determining to decode a current block of the video data using a merge mode. The example method includes generating a first merge list for the current block, wherein generating the first merge list comprises applying template matching to candidates of the first merge list. The example method includes generating, based on the first merge list, a second merge list. The example method includes decoding the current block using the merge mode and based on the first merge list or the second merge list.

Abstract: A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.

Abstract: The present invention relates to the technical field of electrochemistry, and in particular, to a structured electrode, a preparation method therefor and a use thereof. The structured electrode of the present invention comprises an electrode body, and a surface of the electrode body is provided with an etched structure; and the electrode body is of an array structure composed of three-dimensional electrode wires.

Abstract: Example devices, methods, and computer-readable media are disclosed for decoding video data. An example method includes determining to decode a current block of the video data using a merge mode. The example method includes obtaining a flag from a bitstream. The example method includes determining, based on a value of the flag, to use a second merge list of two merge lists for the current block, wherein the second merge list is based on a first merge list of the two merge lists. The example method includes decoding the current block based on the second merge list.

Abstract: A reacting device of dual path synchronous immunochromatographic platform includes a seat, an upper housing, and a fluid dividing funnel. The seat contains two immunochromatographic carriers. The hollow pipe portion has two sloped structures. A force bearing portion of the fluid dividing funnel can be pressed down, so two fluid exits of the fluid dividing funnel move towards these two sloped structures. The specimen drops and is guided into these two immunochromatographic carriers respectively. A reaction result can be observable. The fluid dividing funnel can divide the specimen into two immunochromatographic carriers evenly. The sloped structure can increase the accuracy of specimen supply. Excess specimen can be scraped off for enhancing the solving accuracy. In addition, it can decrease the possibility of false positive problem.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.

Abstract: A display system may include a memory external to a pixel that stores a first digital data value, a memory internal to the pixel that stores a second digital data signal, where a combination of the first digital data signal and the second digital data signal may indicate a target gray level assigned to the pixel for a particular image frame. The pixel may be driven for a first duration of time according to the first digital data signal and for a second duration of time according to the second digital data signal.

Abstract: In various examples, one or more interior or occupant monitoring sensors may be calibrated using one or more display units (e.g., a projector, LED panel, laser robot, heads-up display) that can actively project or display a unique visual pattern and change one or more attributes of the patterns (e.g., shape, color, brightness, size, frame rate, perspective, etc.) without moving the one or more display units. The present techniques may be utilized to iteratively calibrate a sensor using a dynamic visual pattern with one or more visual attributes that vary from iteration to iteration, and/or to interleave different visual patterns in a common region of an overlapping field of view shared by multiple sensors.

Abstract: Provided is a spinning workshop inspection method, an electronic device and a storage medium, relating to technical fields of computers. The spinning workshop inspection method includes: acquiring first image information of an inspection passage when an inspection robot inspects a first position corresponding to the first spinning box in the inspection passage; determining a second spinning box from spinning boxes when the first image information includes a first detection object; acquiring second image information of the inspection passage when the inspection robot inspects a second position corresponding to the second spinning box in the inspection passage; and determining state information of the first detection object based on the first and second image information.

Abstract: A DRAM structure includes a semiconductor substrate, a plurality of DRAM cells, a Bitline, a sense amplifier, and a local wordline. The semiconductor substrate has a top surface. Each DRAM cell includes an access transistor and a storage capacitor. The Bitline has a first terminal extended along the plurality of DRAM cells to a second terminal, and the Bitline is coupled to each access transistor of the plurality of DRAM cells. The sense amplifier is coupled to the first terminal of the Bitline. The local wordline is connected to a gate terminal of the access transistor of a first DRAM cell in the plurality of DRAM cells. A refresh cycle time, a write cycle time, or a read cycle time of the DRAM structure is less than 5 ns.

Abstract: A protector for stenosing tenosynovitis is provided, including: a shell member, including a plurality of ribs defining a plurality of through holes through the shell member in a thickness direction and a plurality of channels transverse to the plurality of through holes; and an lining, attached to an inner side of the shell member, the lining being softer than the shell member. As a result, it is lightweight, comfortable to wear, and has good structural strength and protection.

Abstract: Various embodiments include integrated circuit packages and methods of forming integrated circuit packages. In an embodiment, a device includes: a package substrate; an integrated circuit device attached to the package substrate; a stiffener ring around the integrated circuit device and attached to the package substrate; a lid attached to the stiffener ring; a channel connected to an area between the lid and the integrated circuit device, the channel extending along at least one side of the integrated circuit device in a top-down view; and a thermal interface material in the channel and in the area between the lid and the integrated circuit device.

Abstract: A method for recognizing different object-categories within images based on texture classification of the different categories, which is implemented in an electronic device, includes extracting texture features from block images segmented from original images according to at least one Gabor filter; determining a grayscale level co-occurrence matrix of each block image according to the texture features; calculating texture feature statistics of each block image according to the grayscale level co-occurrence matrix; training and generating an object recognition model using the texture features and the texture feature statistics; and recognizing and classifying at least one object in original image according to the object recognition model.

Abstract: A gas sensing device for detecting a to-be-detected substance in a respiratory gas exhaled by a user includes a housing permitting entrance of the respiratory gas, and a sensing module disposed in the housing. The sensing module includes a light chamber permitting the respiratory gas to pass therethrough, a light source unit emitting light into the light chamber, first and second light sensing units outputting respectively first and second detected signals indicating first and second detected intensities respectively of first and second portions of the light whose wavelengths fall within first and second wavelength ranges, respectively, and a processing unit electrically connected to the first and second light sensing units and determining, based on the first and second detected signals, that the to-be-detected substance exists in the respiratory gas when a difference occurs in each of the first and second detected intensities over time.

Abstract: In some implementations, one or more semiconductor processing tools may form a triple-stacked polysilicon structure on a substrate of a semiconductor device. The one or more semiconductor processing tools may form one or more polysilicon-based devices on the substrate of the semiconductor device, wherein the triple-stacked polysilicon structure has a first height that is greater than one or more second heights of the one or more polysilicon-based devices. The one or more semiconductor processing tools may perform a chemical-mechanical polishing (CMP) operation on the semiconductor device, wherein performing the CMP operation comprises using the triple-stacked polysilicon structure as a stop layer for the CMP operation.

Abstract: Disclosed is a dynamic regulation method for a lane changing decision point of a CAV dedicated lane in a diverging area of an expressway, applied to the diverging area of the expressway in which the CAV dedicated lane is provided at an inner side of a road. Vehicles traveling in the CAV dedicated lane are all CAVs. Both the CAVs and human-driven vehicles can travel in ordinary lanes. The method calculates the lane changing decision points of diversion vehicles in the CAV dedicated lane at current time using corresponding algorithms based on a relationship between the lane changing decision points of the CAV dedicated lane and traffic efficiency and a traffic safety.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: Disclosed is a passive display apparatus. The passive display apparatus includes multiple light-emitting elements, a scanning circuit, multiple scanning switches, and a current control circuit. The light emitting elements are arranged in an array. The scanning circuit is coupled to the light-emitting elements and has multiple scan shift registers to generate multiple scan signals enabled sequentially. The scanning switches receive the scan signals and a first operating voltage to provide the first operating voltage to the light-emitting elements row by row. The current control circuit is coupled to the light-emitting elements, and receives multiple pixel voltages to provide multiple light-emitting currents to the light-emitting elements. The light-emitting elements emit light based on the received light-emitting currents.

Abstract: A device includes: a substrate having a semiconductor fin; a stack of semiconductor channels on the substrate and positioned over the fin; a gate structure wrapping around the semiconductor channels; a source/drain abutting the semiconductor channels; an inner spacer positioned between the stack of semiconductor channels and the fin; an undoped semiconductor layer vertically adjacent the source/drain and laterally adjacent the fin; and an isolation structure that laterally surrounds the undoped semiconductor layer, the isolation structure being between the source/drain and the inner spacer.