Patents by Inventor Chun You

Chun You has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250151287
    Abstract: A memory device includes a memory array comprising a plurality of memory cells arranged over a plurality of rows, the rows including a plurality of word lines, respectively, a first group of the memory cells coupled to an even-numbered one of the word lines and a second group of the memory cells coupled to an odd-numbered one of the word lines. The even-numbered word line is disposed in a first one of a plurality of metallization layers formed vertically above a substrate, wherein the even-numbered word line extends along a first lateral direction and includes a first stitch portion extending in a second lateral direction perpendicular to the first lateral direction. The odd-numbered word line is disposed in a second one of the plurality of metallization layers, wherein the odd-numbered word line extends along the first lateral direction and includes a second stitch portion extending in the second lateral direction.
    Type: Application
    Filed: March 14, 2024
    Publication date: May 8, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ku-Feng Lin, Ji-Kuan Lee, Wen-Chun You, Perng-Fei Yuh, Yi-Chun Shih, Yih Wang
  • Patent number: 12279437
    Abstract: An MRAM memory cell includes a substrate and a transistor. The transistor includes: first and second source regions; a drain region between the first and second source regions; a first channel region between the drain region and the first source region; a second channel region between the drain region and the second source region; a first gate structure over the first channel region; and a second gate structure over the second channel region. A magnetic tunnel junction is overlying the transistor. The drain region is coupled to the magnetic tunnel junction. A first metal layer is overlying the transistor, and a second metal layer is overlying the first metal layer. The second and first metal layers couple a common source line signal to the first and second source regions of the MRAM memory cell and to those of a neighboring MRAM memory cell.
    Type: Grant
    Filed: July 31, 2023
    Date of Patent: April 15, 2025
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Harry-Hak-Lay Chuang, Wen-Chun You, Hung Cho Wang, Yen-Yu Shih
  • Patent number: 12203105
    Abstract: Recombinant strains are obtained for the production of allulose, allose, and allitol by regulating intracellular glucose metabolism, reducing the enzyme activity of fructose 6-phosphate kinase, and enhancing the enzyme activities of glucokinase and glucose-6-phosphate isomerase, allulose 6-phosphate 3-epimerase, allulose 6-phosphate phosphatase, fructose permease and fructokinase, and optionally enhancing the enzyme activities of ribose 5-phosphate isomerase, allose 6-phosphate phosphatase, ribitol dehydrogenase, glycerol permease, glycerol dehydrogenase, and dihydroxyacetone kinase. A method for producing allulose and allose is an extracellular multienzyme cascade method. Multienzyme cascade catalysis and fermentation are coupled to improve the conversion rate of starch sugar or sucrose to the synthesized allulose.
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: January 21, 2025
    Assignee: TIANJIN INSTITUTE OF INDUSTRIAL BIOTECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: Yuanxia Sun, Jiangang Yang, Yunjie Li, Yueming Zhu, Chun You, Yanhe Ma
  • Publication number: 20250017859
    Abstract: In some embodiments of the present disclosure, a solid dispersion is provided, comprising: lurasidone or its pharmaceutically acceptable salt and a carrier. The material of the carrier comprises polyvinyl acetate phthalate (PVAP), polyvinyl alcohol (PVA), cellulose acetate phthalate (CAP), mesoporous silica, hydroxypropyl methycellulose (HPMC), polyvinyl caprolactam-polyvinyl acetate-polyethylene glycol graft copolymer, acrylic resin, hydroxypropyl cellulose (HPC), povidone, copovidone, ethyl cellulose, polyoxyethylene glycol, hypromellose acetate succinate (HPMCAS), hypromellose phthalate (HPMCP), or a combination thereof.
    Type: Application
    Filed: July 10, 2024
    Publication date: January 16, 2025
    Inventors: Chun-You LIOU, Hsiang-Rong TSAI, Tzu-Hsien CHAN, I-Hsiang LIU, Hua-Jing JHAN, Tse-Hsien CHEN, Chiung-Hui HUNG, Chi-Heng JIAN
  • Patent number: 12122218
    Abstract: The present invention relates to a heat management system having performance improved by reducing a distance between components constituting a refrigerant module and minimizing a pressure loss of a refrigerant, the heat management system including: a first heat exchanger heat-exchanging a heat exchange medium flowing thereinto from a compressor; a first expansion valve expanding the heat exchange medium flowing thereinto from the first heat exchanger and transferring the expanded heat exchange medium to a condenser; a second expansion valve expanding the heat exchange medium flowing thereinto from the condenser; a second heat exchanger heat-exchanging the heat exchange medium flowing thereinto from the second expansion valve with a heat-generating component; an accumulator storing the heat exchange medium flowing thereinto from the second heat exchanger; and an internal heat exchanger heat-exchanging the heat exchange medium discharged from the condenser with a heat exchange medium discharged from an evaporat
    Type: Grant
    Filed: November 1, 2021
    Date of Patent: October 22, 2024
    Assignee: Hanon Systems
    Inventors: Jae-Chun You, Yochan Min, Yun Sub Chung
  • Publication number: 20240339144
    Abstract: An exemplary magnetoresistive random-access memory (MRAM) cell is configured to store more than one bit. The MRAM cell includes a first magnetic tunneling junction (MTJ) and a second MTJ connected in parallel. The first MTJ has a first diameter, the second MTJ has a second diameter, and the second diameter is less than the first diameter. The MRAM cell further includes a transistor connected to the first MTJ and the second MTJ, a bit line connected to the first MTJ and the second MTJ, a word line connected to the transistor, and a source line connected to the transistor. A method of writing to the MRAM cell can include supplying one or more write voltages to the MRAM cell (e.g., having different levels) depending on an initial memory state and a desired memory state of the MRAM cell.
    Type: Application
    Filed: August 3, 2023
    Publication date: October 10, 2024
    Inventors: Harry-Hak-Lay Chuang, Ching-Huang Wang, Hung Cho Wang, Tien-Wei Chiang, Wen-Chun You
  • Patent number: 12098871
    Abstract: The present invention provides a vehicle air-conditioning system comprising: a pair of evaporation units which cause heat exchange between a refrigerant and air, and which are arranged to be spaced apart from each other so as to discharge cold air in different directions; one expansion valve, which expands a low-temperature and high-pressure refrigerant so as to supply same to the evaporation unit; an inlet pipe in which the refrigerant of the expansion valve moves to a first evaporation unit; a first moving pipe in which the refrigerant having circulated through one region of the first evaporation unit moves to a second evaporation unit; a second moving pipe in which the refrigerant having circulated through the second evaporation unit moves to the first evaporation unit; and an outlet pipe through which the refrigerant having circulated through the first evaporation unit flows out.
    Type: Grant
    Filed: October 19, 2020
    Date of Patent: September 24, 2024
    Assignee: Hanon Systems
    Inventors: Yun Jin Kim, Jae Chun You, Yo Chan Min, Dong Hee Ye
  • Patent number: 12091697
    Abstract: A method for preparing glucosamine includes the steps of converting fructose-6-phosphate (F6P) and an ammonium salt to glucosamine-6-phosphate (GlcN6P) under the catalysis of glucosamine-6-phosphate deaminase (EC 3.5.99.6, GlmD); and producing glucosamine (GlcN) by the dephosphorylation of GlcN6P under the catalysis of an enzyme capable of catalyzing the dephosphorylation. Such a method can be used to prepare glucosamine by in vitro enzymatic biosystem.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: September 17, 2024
    Assignee: TIANJIN INSTITUTE OF INDUSTRIAL BIOTECHNOLOGY, CHINESE ACADEMY OF SCIENCES
    Inventors: Chun You, Dongdong Meng
  • Publication number: 20240226071
    Abstract: In some embodiments of the present disclosure, a sustained release osmotic-controlled pharmaceutical composition is provided, including: a core and a semi-permeable membrane coated on the core. The core includes a drug compartment, in which the drug compartment includes a first active ingredient, a first polymer and a first osmogen, and the first active ingredient includes lurasidone, a pharmaceutical acceptable salt of the lurasidone or a combination thereof. The semi-permeable membrane includes a membrane body and at least one pore distributed in the membrane body.
    Type: Application
    Filed: October 16, 2023
    Publication date: July 11, 2024
    Inventors: Chun-You LIOU, Tzu-Hsien CHAN, Hua-Jing JHAN, I-Hsiang LIU, Tse-Hsien CHEN, Chi-Heng JIAN
  • Patent number: 12014813
    Abstract: Systems with a contouring method are provided for contouring one or more targets that correspond to specific organs and/or tumors in a three-dimensional medical image of a patient using neural networks. The contouring system includes a storage unit, a processing unit, and a plurality of modules that are computer operable. The processing unit is used to obtain the image, and then to generate one or more contouring images using a contouring method. The contouring method includes enhancing image features and improving contouring accuracy using an image preprocessing module, and extracting a plurality of multi-scale image representations and expanding these representations to one or more contouring images using a neural network-based contouring module.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: June 18, 2024
    Assignee: QUANTA COMPUTER INC.
    Inventors: Kuei-Hong Kuo, Yi-Ting Peng, Ching-Chung Kao, Ai-Ling Hsu, Yu-Ren Yang, Pei-Wei Shueng, Chun-You Chen, Kuan-Chieh Huang
  • Publication number: 20240131010
    Abstract: In some embodiments of the present disclosure, a sustained release osmotic-controlled pharmaceutical composition is provided, including: a core and a semi-permeable membrane coated on the core. The core includes a drug compartment, in which the drug compartment includes a first active ingredient, a first polymer and a first osmogen, and the first active ingredient includes lurasidone, a pharmaceutical acceptable salt of the lurasidone or a combination thereof. The semi-permeable membrane includes a membrane body and at least one pore distributed in the membrane body.
    Type: Application
    Filed: October 15, 2023
    Publication date: April 25, 2024
    Inventors: Chun-You LIOU, Tzu-Hsien CHAN, Hua-Jing JHAN, I-Hsiang LIU, Tse-Hsien CHEN, Chi-Heng JIAN
  • Publication number: 20240113043
    Abstract: A semiconductor device and methods of fabrication thereof including a substrate, a doped well formed in the substrate, a transistor formed on the substrate, a dielectric material located over the doped well and the transistor and including interconnect structures extending through the dielectric material, the interconnect structures including a first set of interconnect structures electrically coupled to an active region of the transistor and a second set of interconnect structures electrically coupled to the doped well, an active memory cell electrically coupled to the active region of the transistor via the first set of interconnect structures; and a dummy memory cell electrically coupled to the doped well via the second set of conductive interconnect structures. The dummy memory cell and the second set of conductive interconnect structures may provide a low resistance pathway for plasma charge to flow to the doped well, thereby minimizing plasma induced damage to the transistor.
    Type: Application
    Filed: April 20, 2023
    Publication date: April 4, 2024
    Inventors: Harry-Hak-Lay Chuang, Hung Cho Wang, Wen-Chun You
  • Patent number: 11884138
    Abstract: The present invention relates to a vehicle air conditioner and, more specifically, to a vehicle air conditioner which supplies, to a variable heat exchanger, condensate water and air, that have been blown by means of a supply part and passed through an evaporator, so as to enable sub-cooling and overall performance of the variable heat exchanger to be improved during cooling, thereby further increasing cooling performance, and which may use air and condensate water as a heat-absorbing heat source during heating so as to further increase the heat absorption amount of the variable heat exchanger, so that heating performance may be further increased, and thus overall power consumption for air conditioning may be reduced and an increase in heat pump system performance may be promoted.
    Type: Grant
    Filed: March 5, 2021
    Date of Patent: January 30, 2024
    Assignee: Hanon Systems
    Inventors: Jae-Chun You, Yo Chan Min, Tae Yong Park
  • Publication number: 20240025237
    Abstract: A vehicular heat management system includes a compressor arranged on a heat pump type refrigerant circulation line, a high-pressure side heat exchanger arranged on the heat pump type refrigerant circulation line, an outdoor heat exchanger arranged on the heat pump type refrigerant circulation line, a plurality of expansion valves arranged on the heat pump type refrigerant circulation line, a low-pressure side heat exchanger arranged on the heat pump type refrigerant circulation line, a first expansion valve arranged on the upstream side of the outdoor heat exchanger, a second expansion valve arranged on the downstream side of the outdoor heat exchanger, and a control part configured to control opening degrees of the first expansion valve and the second expansion valve depending on whether icing occurs in the outdoor heat exchanger under a heat pump mode condition.
    Type: Application
    Filed: July 14, 2022
    Publication date: January 25, 2024
    Inventors: Yo Chan MIN, Jae Chun YOU, Yu Ho LEE
  • Publication number: 20230380187
    Abstract: An MRAM memory cell includes a substrate and a transistor. The transistor includes: first and second source regions; a drain region between the first and second source regions; a first channel region between the drain region and the first source region; a second channel region between the drain region and the second source region; a first gate structure over the first channel region; and a second gate structure over the second channel region. A magnetic tunnel junction is overlying the transistor. The drain region is coupled to the magnetic tunnel junction. A first metal layer is overlying the transistor, and a second metal layer is overlying the first metal layer. The second and first metal layers couple a common source line signal to the first and second source regions of the MRAM memory cell and to those of a neighboring MRAM memory cell.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Inventors: Harry-Hak-Lay CHUANG, Wen-Chun YOU, Hung Cho WANG, Yen-Yu SHIH
  • Publication number: 20230373271
    Abstract: The present invention relates to a heat management system having performance improved by reducing a distance between components constituting a refrigerant module and minimizing a pressure loss of a refrigerant, the heat management system including: a first heat exchanger heat-exchanging a heat exchange medium flowing thereinto from a compressor; a first expansion valve expanding the heat exchange medium flowing thereinto from the first heat exchanger and transferring the expanded heat exchange medium to a condenser; a second expansion valve expanding the heat exchange medium flowing thereinto from the condenser; a second heat exchanger heat-exchanging the heat exchange medium flowing thereinto from the second expansion valve with a heat-generating component; an accumulator storing the heat exchange medium flowing thereinto from the second heat exchanger; and an internal heat exchanger heat-exchanging the heat exchange medium discharged from the condenser with a heat exchange medium discharged from an evaporat
    Type: Application
    Filed: November 1, 2021
    Publication date: November 23, 2023
    Inventors: Jae-Chun YOU, Yochan MIN, Yun Sub CHUNG
  • Patent number: 11800724
    Abstract: An MRAM memory cell includes a substrate and a transistor. The transistor includes: first and second source regions; a drain region between the first and second source regions; a first channel region between the drain region and the first source region; a second channel region between the drain region and the second source region; a first gate structure over the first channel region; and a second gate structure over the second channel region. A magnetic tunnel junction is overlying the transistor. The drain region is coupled to the magnetic tunnel junction. A first metal layer is overlying the transistor, and a second metal layer is overlying the first metal layer. The second and first metal layers couple a common source line signal to the first and second source regions of the MRAM memory cell and to those of a neighboring MRAM memory cell.
    Type: Grant
    Filed: December 27, 2021
    Date of Patent: October 24, 2023
    Inventors: Harry-Hak-Lay Chuang, Wen-Chun You, Hung Cho Wang, Yen-Yu Shih
  • Patent number: 11723292
    Abstract: The present disclosure, in some embodiments, relates to a memory device. The memory device includes a dielectric protection layer having sidewalls defining an opening over a conductive interconnect within an inter-level dielectric (ILD) layer. A bottom electrode structure extends from within the opening to directly over the dielectric protection layer. A variable resistance layer is over the bottom electrode structure and a top electrode is over the variable resistance layer. A top electrode via is disposed on the top electrode and directly over the dielectric protection layer.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: August 8, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Yang Chang, Wen-Ting Chu, Kuo-Chi Tu, Yu-Wen Liao, Hsia-Wei Chen, Chin-Chieh Yang, Sheng-Hung Shih, Wen-Chun You
  • Patent number: D986629
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: May 23, 2023
    Inventor: Chun You
  • Patent number: D1058674
    Type: Grant
    Filed: March 2, 2023
    Date of Patent: January 21, 2025
    Inventor: Chun You