Abstract: A method of maximizing power efficiency for a power amplifier system comprises obtaining a power supply voltage; determining a first voltage level sufficient for a power amplifier of the power amplifier system to output an output power; determining a second voltage level lower than the first voltage level; determining whether the power amplifier is activated, to generate a determination result; determining to convert the power supply voltage into a supply voltage with the first voltage level or the second voltage level according to the determination result; and supplying the power amplifier with the supply voltage.

Abstract: A test wafer is placed inside a baking module and is baked. Via one or more temperature sensors, a cumulative heat amount delivered to the test wafer during the baking is measured. The measured cumulative heat amount is compared with a predefined cumulative heat amount threshold. In response to the comparing indicating that the measured cumulative heat amount is within the predefined cumulative heat amount threshold, it is determined that the baking module is qualified for actual semiconductor fabrication. In response to the comparing indicating that the measured cumulative heat amount is outside of the predefined cumulative heat amount threshold, it is determined that the baking module is not qualified for actual semiconductor fabrication.

Abstract: A urinary catheter conveying device includes a sleeve member, a conveying assembly and a controller. The sleeve member is for sleeving onto a glans of a penis and has a guiding hole to be registered with an external urethral orifice of the glans. The conveying assembly includes a casing removably mounted to the sleeve member, and a conveying mechanism for advancing the urinary catheter to the guiding hole such that the urinary catheter is inserted into the external urethral orifice. The controller controls the conveying mechanism to advance the urinary catheter to the guiding hole. A urinary catheterization system and a method of using the urinary catheterization system are also disclosed.

Abstract: A test wafer is placed inside a baking module and is baked. Via one or more temperature sensors, a cumulative heat amount delivered to the test wafer during the baking is measured. The measured cumulative heat amount is compared with a predefined cumulative heat amount threshold. In response to the comparing indicating that the measured cumulative heat amount is within the predefined cumulative heat amount threshold, it is determined that the baking module is qualified for actual semiconductor fabrication. In response to the comparing indicating that the measured cumulative heat amount is outside of the predefined cumulative heat amount threshold, it is determined that the baking module is not qualified for actual semiconductor fabrication.

Abstract: A urinary catheter conveying device includes a sleeve member, a conveying assembly and a controller. The sleeve member is for sleeving onto a glans of a penis and has a guiding hole to be registered with an external urethral orifice of the glans. The conveying assembly includes a casing removably mounted to the sleeve member, and a conveying mechanism for advancing the urinary catheter to the guiding hole such that the urinary catheter is inserted into the external urethral orifice. The controller controls the conveying mechanism to advance the urinary catheter to the guiding hole. A urinary catheterization system and a method of using the urinary catheterization system are also disclosed.

Abstract: A method of maximizing power efficiency for a power amplifier system comprises obtaining a power supply voltage; determining a first voltage level sufficient for a power amplifier of the power amplifier system to output an output power; determining a second voltage level lower than the first voltage level; determining whether the power amplifier is activated, to generate a determination result; determining to convert the power supply voltage into a supply voltage with the first voltage level or the second voltage level according to the determination result; and supplying the power amplifier with the supply voltage.

Abstract: A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive, exposing the first layer to a radiation, mixing a first solution and a second solution, thereby forming a developer, and dispensing the developer to the exposed first layer to form a pattern over the substrate. The dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.

Abstract: A urinary catheter conveying device includes a sleeve member, a conveying assembly and a controller. The sleeve member is for sleeving onto a glans of a penis and has a guiding hole to be registered with an external urethral orifice of the glans. The conveying assembly includes a casing removably mounted to the sleeve member, and a conveying mechanism for advancing the urinary catheter to the guiding hole such that the urinary catheter is inserted into the external urethral orifice. The controller controls the conveying mechanism to advance the urinary catheter to the guiding hole. A urinary catheterization system and a method of using the urinary catheterization system are also disclosed.

Abstract: A test wafer is placed inside a baking module and is baked. Via one or more temperature sensors, a cumulative heat amount delivered to the test wafer during the baking is measured. The measured cumulative heat amount is compared with a predefined cumulative heat amount threshold. In response to the comparing indicating that the measured cumulative heat amount is within the predefined cumulative heat amount threshold, it is determined that the baking module is qualified for actual semiconductor fabrication. In response to the comparing indicating that the measured cumulative heat amount is outside of the predefined cumulative heat amount threshold, it is determined that the baking module is not qualified for actual semiconductor fabrication.

Abstract: A test wafer is placed inside a baking module and is baked. Via one or more temperature sensors, a cumulative heat amount delivered to the test wafer during the baking is measured. The measured cumulative heat amount is compared with a predefined cumulative heat amount threshold. In response to the comparing indicating that the measured cumulative heat amount is within the predefined cumulative heat amount threshold, it is determined that the baking module is qualified for actual semiconductor fabrication. In response to the comparing indicating that the measured cumulative heat amount is outside of the predefined cumulative heat amount threshold, it is determined that the baking module is not qualified for actual semiconductor fabrication.

Abstract: A fabric strain gauge includes a knitted fabric and a plurality of conductive measuring fibers, a first high conductivity fiber, and a second high conductivity fiber. The conductive measuring fibers are threaded with the knitted fabric, the first high conductivity conductive fiber is threaded with the knitted fabric, and connected to one or more ends of the conductive measuring fibers, and the second high conductivity fiber is threaded with the knitted fabric, and connected to the other ends of at least part of the conductive measuring fibers. In addition, a fabric pressure gauge and a smart clothing are also disclosed herein.

Abstract: A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive, exposing the first layer to a radiation, mixing a first solution and a second solution, thereby forming a developer, and dispensing the developer to the exposed first layer to form a pattern over the substrate. The dispensing of the developer includes varying a concentration of a developing chemical in the developer in multiple stages, such that the concentration of the developing chemical in the developer increases from a first stage to a subsequent second stage, and increases from the second stage to a subsequent third stage real-time during the dispensing.

Abstract: A system for lithography patterning includes a first supply pipe for supplying a first solution, a second supply pipe for supplying a second solution, and a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture. The third supply pipe couples to the first and second supply pipe at a junction. At the junction the first solution in the first supply pipe flows in a direction opposite to that of the second solution in the second supply pipe. The system further includes a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution, and a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution.

Abstract: A wearable physiological monitoring device is provided. The wearable physiological monitoring device includes a wearable object, a sensing module and a processing module. The sensing module is disposed on the wearable object and is configured to stretch based on a local displacement of target organ of the under-test person contacted by the wearable object to generate a change of a sensing value thereof. The processing module is configured to calculate a physiological changing mode that includes physiological information and occurrence time information based on the change of the sensing value. The physiological information includes a number, duration, a degree or a combination of the above of the stretching of the wearable object to determine the health condition of the under-test person.

Abstract: A system for lithography patterning includes a first supply pipe for supplying a first solution, a second supply pipe for supplying a second solution, and a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture. The third supply pipe couples to the first and second supply pipe at a junction. At the junction the first solution in the first supply pipe flows in a direction opposite to that of the second solution in the second supply pipe. The system further includes a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution, and a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution.

Abstract: A system for lithography patterning includes a first supply pipe for supplying a first solution; a second supply pipe for supplying a second solution; a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture; a substrate stage for holding a substrate; a supply nozzle coupled to the third supply pipe for dispensing the mixture to the substrate; a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution going to the third supply pipe; and a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution going to the third supply pipe.

Abstract: A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive. The method further includes exposing the first layer to a radiation. The method further includes applying a developer to the exposed first layer, resulting in a pattern over the substrate, wherein the developer includes a developing chemical whose concentration in the developer is a function of time during the applying of the developer.

Abstract: In a pattern forming method, a resist layer disposed on a wafer is exposed by an energy beam. A post-exposure-bake (PEB) is performed on the wafer with the exposed resist layer by using a PEB apparatus. After the PEB, the exposed resist layer is developed, thereby forming a resist pattern. The PEB apparatus includes a baking plate, and the wafer is placed on the baking plate for the PEB when a temperature of the wafer is within a predetermined temperature range.

Abstract: A test wafer is placed inside a baking module and is baked. Via one or more temperature sensors, a cumulative heat amount delivered to the test wafer during the baking is measured. The measured cumulative heat amount is compared with a predefined cumulative heat amount threshold. In response to the comparing indicating that the measured cumulative heat amount is within the predefined cumulative heat amount threshold, it is determined that the baking module is qualified for actual semiconductor fabrication. In response to the comparing indicating that the measured cumulative heat amount is outside of the predefined cumulative heat amount threshold, it is determined that the baking module is not qualified for actual semiconductor fabrication.

Abstract: A dispensing head for dispensing a developer onto a substrate is provided. The dispensing head includes a housing configured to receive the developer. The dispensing head further includes at least one liquid outlet provided on the housing. The liquid outlet is configured to spray the developer onto an elongated area on the substrate. Also, the liquid outlet is configured to spray the developer along a dispensing direction that is tilted with respect to the normal direction of the substrate and perpendicular to the long-axis direction of the elongated area.